2N6975, 2N6976, 2N6977, 2N6978 5A, 400V and 500V N-Channel IGBTs April 1995 Features Package JEDEC TO-204AA BOTTOM VIEW * 5A, 400V and 500V * VCE(ON) 2V COLLECTOR (FLANGE) EMITTER * TFI 1s, 0.5s * Low On-State Voltage GATE * Fast Switching Speeds * High Input Impedance Terminal Diagram Applications N-CHANNEL ENHANCEMENT MODE * Power Supplies C * Motor Drives * Protection Circuits G Description E The 2N6975, 2N6976, 2N6977 and the 2N6978 are n-channel enhancement-mode insulated gate bipolar transistors (IGBTs) designed for high-voltage, low on-dissipation applications such as switching regulators and motor drivers. These types can be operated directly from low-power integrated circuits. PACKAGING AVAILABILITY PART NUMBER PACKAGE 2N6975 TO-204AA 2N6976 TO-204AA 2N6977 TO-204AA 2N6978 TO-204AA BRAND NOTE: When ordering, use the entire part number. Absolute Maximum Ratings TC = +25oC, Unless Otherwise Specified. Collector-Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VCES Collector-Gate Voltage (RGE = 1M) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VCGR Reverse Collector-Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VCES(REV.) Gate-Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VGE Collector Current Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC Collector Current Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ICM Power Dissipation Total at TC = +25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .PD Power Dissipation Derating TC > +25oC Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . TJ, TSTG NOTE: 2N6975/2N6977 (Note 1) 400 400 5 20 5 10 100 0.8 -55 to +150 2N6976/2N6978 (Note 1) 500 500 5 20 5 10 100 0.8 -55 to +150 UNITS V V V V A A W W/oC oC 1. JEDEC registered value. HARRIS SEMICONDUCTOR IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS: 4,364,073 4,587,713 4,417,385 4,598,461 4,430,792 4,605,948 4,443,931 4,618,872 4,466,176 4,620,211 4,516,143 4,631,564 4,532,534 4,639,754 4,567,641 4,639,762 4,641,162 4,794,432 4,860,080 4,969,027 4,644,637 4,801,986 4,883,767 4,682,195 4,803,533 4,888,627 4,684,413 4,809,045 4,890,143 4,694,313 4,809,047 4,901,127 4,717,679 4,810,665 4,904,609 4,743,952 4,823,176 4,933,740 4,783,690 4,837,606 4,963,951 (c)2001 Fairchild Semiconductor Corporation 2N6975, 2N6976, 2N6977, 2N6978 Rev. A Specifications 2N6975, 2N6976, 2N6977, 2N6978 Electrical Specifications TC = +25oC, Unless Otherwise Specified LIMITS PARAMETERS SYMBOL TEST CONDITIONS 2N6975/2N6977 2N6976/2N6978 MIN MAX MIN MAX UNIT S Collector-Emitter Breakdown Voltage BVCES lC = 1 mA, VGE = 0 400 (Note 1) - 500 (Note 1) - V Gate Threshold Voltage VGE(TH) VGE = VCE, IC = 1mA 2 (Note 1) 4.5 (Note 1) 2 (Note 1) 4.5 (Note 1) V VCE = 400V - 250 (Note 1) - - A VCE = 500V - - - 250 (Note 1) A TC = +125oC - - - - A VCE = 400V - 1000 (Note 1) - - A VCE = 500V - - - 1000 (Note 1) A Zero Gate Voltage Collector Current lCES Gate-Emitter Leakage Current IGES VGE = 20V, VCE = 0V - 100 (Note 1) - 100 (Note 1) ns Reverse Collector-Emitter Leakage Current IECS RGE = 0, VEC = 5V - 5 (Note 1) - 5 (Note 1) mA VCE(ON) IC = 5A, VGE = 10V - 2 (Note 1) - 2 (Note 1) V IC = 10A, VGE = 20V - 2.5 - 2.5 V Collector-Emitter On Voltage VGEP IC = 5A, VCE = 10V 3.4 (Note 1) 6.8 (Note 1) 3.4 (Note 1) 6.8 (Note 1) V On-State Gate Charge QG(ON) IC = 5A, VCE = 10V 12 (Note 1) 25 (Note 1) 12 (Note 1) 25 (Note 1) nC Turn-On Delay Time tD(ON) IC = 5A VCE(CLP) = 300V L = 50H TJ = +125oC VGE = 10V RG = 50 Gate-Emitter Plateau Voltage Rise Time Turn-Off Delay Time Fall Time tR tD(ON) tFI Turn-Off Energy Loss per Cycle (Off Switching Dissipation= WOFF x Frequency) WOFF Thermal Resistance Junction-to-Case RJC IC = 5A VCE(CLP) = 300V L = 50H TJ = +125oC VGE = 10V RG = 50 50 Max ns 50 Max ns 400 Max (Note 1) ns 2N6975 2N6976 1000 Max (Note 1) ns 2N6977 2N6978 500 Max (Note 1) ns 2N6975 2N6976 1000 Max (Note 1) J 2N6977 2N6978 500 Max (Note 1) J 1.25 (Note 1) oC/W NOTE: 1. JEDEC registered value. (c)2001 Fairchild Semiconductor Corporation 2N6975, 2N6976, 2N6977, 2N6978 Rev. A 2N6975, 2N6976, 2N6977, 2N6978 Typical Performance Curves VGE = VCE IC = 1mA EFFECTIVE TRANSIENT THERMAL IMPEDANCE (NORMALIZED) NORMALIZED GATE THRESHOLD VOLTAGE 1.3 1.2 1.1 1.0 0.9 0.8 0.7 10 ZJC(t) = r(t)RJC D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(PEAK) - TC = P(PEAK)ZJC(t) D = 0.5 D = 0.2 1.0 0.1 D = 0.05 SINGLE PULSE -50 0 +50 +100 0.01 0.01 +150 0.1 TC , JUNCTION TEMPERATURE (oC) FIGURE 1. TYPICAL NORMALIZED GATE THRESHOLD VOLTAGE AS A FUNCTION OF JUNCTION TEMPERATURE FOR ALL TYPES 100 1000 FIGURE 2. NORMALIZED THERMAL RESPONSE CHARACTERISTICS FOR ALL TYPES 10 10 7.5 +125oC 5.0 2.5 TC = +25oC VGE = +10V PULSE TEST, VCE = 10V PULSE DURATION = 80s DUTY CYCLE = 0.5% MAX ICE, COLLECTOR CURRENT (A) ICE, COLLECTOR CURRENT (A) 1.0 10 t, TIME (ms) -40oC +25oC VGE = +8V 7.5 VGE = +6V VGE = +7V VGE = +5V 5.0 2.5 VGE = +4V 0 0 0 2.5 5.0 7.5 10 VGE, GATE-TO-EMITTER VOLTAGE (V) FIGURE 3. TYPICAL TRANSFER CHARACTERISTICS FOR ALL TYPES (c)2001 Fairchild Semiconductor Corporation 0 1 2 3 4 5 VCE, COLLECTOR-TO-EMITTER VOLTAGE (V) FIGURE 4. TYPICAL SATURATION CHARACTERISTICS FOR ALL TYPES 2N6975, 2N6976, 2N6977, 2N6978 Rev. A 2N6975, 2N6976, 2N6977, 2N6978 Typical Performance Curves (Continued) 1200 f = 0.1MHz PULSE TEST PULSE DURATION = 80s DUTY CYCLE = 0.5% MAX 8 1000 VGE = 10V C, CAPACITANCE (pF) ICE, COLLECTOR CURRENT (A) 10 6 4 2 800 600 CISS 400 200 COSS CRSS 0 0 0 0.5 1.0 1.5 2.0 2.5 0 3.0 10 WOFF = IC * VCEdt VGE IC VCE 30 40 50 FIGURE 6. CAPACITANCE AS A FUNCTION OF COLLECTORTO-EMITTER VOLTAGE FOR ALL TYPES fOP , MAXIMUM OPERATING FREQUENCY (kHz) FIGURE 5. TYPICAL COLLECTOR-TO-EMITTER ON-VOLTAGE AS A FUNCTION OF COLLECTOR CURRENT FOR ALL TYPES 20 VCE, COLLECTOR-TO-EMITTER VOLTAGE (V) VCE, COLLECTOR-TO-EMITTER ON VOLTAGE (V) TC = oC 100 90 140 100 fMAX1 = 0.05/tD(OFF) 120 fMAX2 = (PD - PC)/WOFF 2N6975 100 2N6977 2N6976 2N6978 80 VGE = 10V RG = 50 RL = 300/ce L = 50H VCC = 300V 60 40 TJ = +150oC 20 1 2 3 4 5 6 7 8 9 10 ICE, COLLECTOR CURRENT (A) FIGURE 7. TYPICAL INDUCTIVE SWITCHING WAVEFORMS PD: ALLOWABLE DISSIPATION PC: CONDUCTION DISSIPATION FIGURE 8. MAXIMUM OPERATING FREQUENCY vs COLLECTOR CURRENT (TYPICAL) (c)2001 Fairchild Semiconductor Corporation 2N6975, 2N6976, 2N6977, 2N6978 Rev. A Typical Performance Curves (Continued) VCE, COLLECTOR-EMITTER VOLTAGE (V) VCC = BVCES 375 RL = 100 GATE IG (REF) = 0.43mA VGE = 10V EMITTER VOLTAGE 8 VCC = BVCES 6 250 0.75 BVCES 0.50 BVCES 0.25 BVCES 125 4 0.75 BVCES 0.50 BVCES 0.25 BVCES 2 COLLECTOR-EMITTER VOLTAGE 0 VGE, GATE-EMITTER VOLTAGE (V) 10 500 0 20 IG (REF) IG (ACT) TIME (s) 80 IG (REF) IG (ACT) FIGURE 9. NORMALIZED SWITCHING WAVEFORMS AT CONSTANT GATE CURRENT (REFER TO APPLICATION NOTES AN7254 AND AN7260) RL L = 50H 1/RG = 1/RGEN + 1/RGE VCC 300V RGEN = 100 + - 20V 0V RGE = 100 FIGURE 10. INDUCTIVE SWITCHING TEST CIRCUIT (c)2001 Fairchild Semiconductor Corporation 2N6975, 2N6976, 2N6977, 2N6978 Rev. A TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACExTM BottomlessTM CoolFETTM CROSSVOLTTM DenseTrenchTM DOMETM EcoSPARKTM E2CMOSTM EnSignaTM FACTTM FACT Quiet SeriesTM FAST FASTrTM GlobalOptoisolatorTM GTOTM HiSeCTM ISOPLANARTM LittleFETTM MicroFETTM MICROWIRETM OPTOLOGICTM OPTOPLANARTM PACMANTM POPTM PowerTrench QFETTM QSTM QT OptoelectronicsTM Quiet SeriesTM SILENT SWITCHER SMART STARTTM Star* PowerTM StealthTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogicTM UHCTM UltraFET VCXTM DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or 2. A critical component is any component of a life support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. H1