CMT2N7002 SMALL SIGNAL MOSFET GENERAL DESCRIPTION FEATURES This N-Channel enhancement mode field effect transistor is ! High Density Cell Design for Low RDS(ON) produced using high cell density, DMOS technology. These ! Voltage Controlled Small Signal Switch products have been designed to minimize on-state ! Rugged and Reliable resistance while provide rugged, reliable, and fast switching ! High Saturation Current Capability performance. It can be used in most applications requiring up to 115mA DC and can deliver pulsed currents up to 800mA. This product is particularly suited for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers, and other switching applications. PIN CONFIGURATION SYMBOL SOT-23 D Top View 1 G SOURCE DRAIN GATE 3 S 2 N-Channel MOSFET ORDERING INFORMATION Part Number Package CMT2N7002 SOT-23 ABSOLUTE MAXIMUM RATINGS Rating Symbol Value Unit Drain Source Voltage VDSS 60 V Drain-Gate Voltage (RGS = 1.0M) VDGR 60 V mA Drain to Current Continuous Pulsed Gate-to-Source Voltage Continue Non-repetitive Total Power Dissipation ID 115 IDM 800 VGS 20 V VGSM 40 V PD 225 mW Derate above 25 1.8 mW/ EAS 9.6 mJ Operating and Storage Temperature Range TJ, TSTG -55 to 150 Thermal Resistance Junction to Ambient JA 417 /W Maximum Lead Temperature for Soldering Purposes, 1/8" from case for 10 seconds TL 300 Single Pulse Drain-to-Source Avalanche Energy TJ = 25 (VDD = 50V, VGS = 10V, IAS = 0.8A, L = 30mH, RG = 25) 2003/08/28 Rev. 1.1 Champion Microelectronic Corporation Page 1 CMT2N7002 SMALL SIGNAL MOSFET ELECTRICAL CHARACTERISTICS Unless otherwise specified, TJ = 25. CMT2N7002 Characteristic Drain-Source Breakdown Voltage (VGS = 0 V, ID = 10 A) Symbol Min V(BR)DSS 60 Typ Max Units V IDSS Drain-Source Leakage Current (VDS = 60 V, VGS = 0 V) (VDS = 60 V, VGS = 0 V, TJ = 125) 1.0 0.5 A mA Gate-Source Leakage Current-Forward (Vgsf = 20 V) IGSSF 100 nA Gate-Source Leakage Current-Reverse (Vgsf = -20 V) IGSSF -100 nA 2.5 V Gate Threshold Voltage * (VDS = VGS, ID = 250 A) On-State Drain Current (VDS 2.0 VDS(on), VGS = 10V) VGS(th) 1.0 Id(on) 500 Static Drain-Source On-Resistance * (VGS = 10 V, ID = 0.5A) (VGS = 10 V, ID = 0.5A, TC = 125) (VGS = 5.0 V, ID = 50mA) (VGS = 5.0 V, ID = 50mA, TC = 125) RDS(on) Drain-Source On-Voltage * (VGS = 10 V, ID = 0.5A) (VGS = 5.0 V, ID = 50mA) VDS(on) mA 7.5 13.5 7.5 13.5 V 3.75 0.375 Forward Transconductance (VDS 2.0 VDS(on), ID = 200mA) * gFS Input Capacitance Ciss 50 Coss 25 pF pF Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Turn-Off Delay Time (VDS = 25 V, VGS = 0 V, f = 1.0 MHz) (VDD = 25 V, ID = 500 mA, Vgen = 10 V, RG = 25, RL = 50) * Diode Forward On-Voltage (IS = 115 mA, VGS = 0V) 80 mmhos Crss 5.0 pF td(on) 20 td(off) 40 ns ns VSD -1.5 V Source Current Continuous (Body Diode) IS -115 mA Source Current Pulsed ISM -800 mA * Pulse Test: Pulse Width 300s, Duty Cycle 2% 2003/08/28 Rev. 1.1 Champion Microelectronic Corporation Page 2 CMT2N7002 SMALL SIGNAL MOSFET TYPICAL ELECTRICAL CHARACTERISTICS Figure 5. Capacitance 2003/08/28 Rev. 1.1 Champion Microelectronic Corporation Page 3 CMT2N7002 SMALL SIGNAL MOSFET PACKAGE DIMENSION SOT-23 D b1 3 With Plating E E1 c c1 A A1 A2 b b Base Metal b1 c Section B-B c1 D E 1 2 e e1 E1 b L L1 e 1 e1 1 2 2003/08/28 Rev. 1.1 A1 A2 A 2 See Section B-B L L1 Champion Microelectronic Corporation Page 4 CMT2N7002 SMALL SIGNAL MOSFET IMPORTANT NOTICE Champion Microelectronic Corporation (CMC) reserves the right to make changes to its products or to discontinue any integrated circuit product or service without notice, and advises its customers to obtain the latest version of relevant information to verify, before placing orders, that the information being relied on is current. A few applications using integrated circuit products may involve potential risks of death, personal injury, or severe property or environmental damage. CMC integrated circuit products are not designed, intended, authorized, or warranted to be suitable for use in life-support applications, devices or systems or other critical applications. understood to be fully at the risk of the customer. Use of CMC products in such applications is In order to minimize risks associated with the customer's applications, the customer should provide adequate design and operating safeguards. HsinChu Headquarter Sales & Marketing 5F, No. 11, Park Avenue II, Science-Based Industrial Park, HsinChu City, Taiwan T E L : +886-3-567 9979 F A X : +886-3-567 9909 11F, No. 306-3, SEC. 1, Ta Tung Road, Hsichih, Taipei Hsien 221, Taiwan 2003/08/28 Rev. 1.1 T E L : +886-2-8692 1591 F A X : +886-2-8692 1596 Champion Microelectronic Corporation Page 5