BDX53BFP
S ILICON POWER DARLINGTON TRANSISTOR
APPLICATIONS:
■GE NER AL PU RPOSE SW ITC HING AND
AMPLI FI ER
■LINEAR AND SWITCHING INDUSTRIAL
EQUIPMENT
■FULLY INS ULAT E D PA CKAG E (U. L.
COMPLIANT) FOR EASY MOUNTING
DESCRIPTION
The BDX53BFP is a silicon Epitaxial-Base NPN
power transistor in monolithic Darlington
configuration mounted in T0-220FP fully molded
isolated package. It is intented for use in hammer
drivers, audio amplifiers and other medi um power
linear and switching applications.
INT E R NAL SCH E M ATI C DIAG RA M
February 2003
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
VCBO Collector-Base Voltag e (IE = 0) 80 V
VCEO Collector-Emitter Voltage (IB = 0) 80 V
VEBO Emitter-base Voltage (IC = 0) 5 V
ICCollector Current 8 A
ICM Collector Peak Current (repetitive) 12 A
IBBase Current 0.2 A
Ptot Total Dissipation at Tc ≤ 25 oC29 W
Visol Insulation Withstand Voltage (R MS) from All
Three Leads to External Heatsink 1500 V
Tstg Storage Temperature -65 to 150 oC
TjMax. Operating Junction Temperature 150 oC
123
T0-220FP
R1 Typ. = 10 KΩ R2 Typ. = 150 Ω
®
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