MMBT3904T
NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR
Features
DS30270 Rev. 8 - 2
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MMBT3904T
© Diodes Incorporated
• Epitaxial Planar Die Construction
• Complementary PNP Type Available (MMBT3906T)
• Ultra-Small Surface Mount Package
• Lead Free/RoHS Compliant (Note 2)
• "Green" Device (Note 3 and 4)
Mechanical Data
• Case: SOT-523
• Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020C
• Terminals: Solderable per MIL-STD-202, Method 208
• Lead Free Plating (Matte Tin Finish annealed over
Alloy 42 leadframe).
• Terminal Connections: See Diagram
• Marking Information: 1N, See Page 3
• Ordering & Date Code Information: See Page 3
• Weight: 0.002 grams (approximate)
SOT-523
Dim Min Max Typ
A 0.15 0.30 0.22
B 0.75 0.85 0.80
C 1.45 1.75 1.60
D ⎯ ⎯ 0.50
G 0.90 1.10 1.00
H 1.50 1.70 1.60
J 0.00 0.10 0.05
K 0.60 0.80 0.75
L 0.10 0.30 0.22
M 0.10 0.20 0.12
N 0.45 0.65 0.50
α 0° 8° ⎯
All Dimensi mm ons in
A
M
JL
Maximum Ratings @TA = 25°C unless otherwise specified
Characteristic Symbol Value Unit
Collector-Base Voltage VCBO 60 V
Collector-Emitter Voltage VCEO 40 V
Emitter-Base Voltage VEBO 6.0 V
Collector Current - Continuous IC 200 mA
Power Dissipation (Note 1) Pd 150 mW
Thermal Resistance, Junction to Ambient (Note 1) RθJA 833 °C/W
Operating and Storage Temperature Range Tj, TSTG -55 to +150 °C
Notes: 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which
can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
2. No purposefully added lead
3. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
4. Product manufactured with Date Code UO (week 40, 2007) and newer are built with Green Molding Compound. Product manufactured prior to Date
Code UO are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants.
E
B
C
D
BC
H
K
G
TOP VIEW
C
E
B
N
Electrical Characteristics @TA = 25°C unless otherwise specified
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Characteristic Symbol Min Max Unit Test Condition
OFF CHARACTERISTICS (Note 5)
Collector-Base Breakdown Voltage V(BR)CBO 60 ⎯ V IC = 10μA, IE = 0
Collector-Emitter Breakdown Voltage V(BR)CEO 40 ⎯ V IC = 1.0mA, IB = 0
Emitter-Base Breakdown Voltage V(BR)EBO 6.0 ⎯ V IE = 10μA, IC = 0
Collector Cutoff Current ICEX ⎯ 50 nA VCE = 30V, VEB(OFF) = 3.0V
Base Cutoff Current IBL ⎯ 50 nA VCE = 30V, VEB(OFF) = 3.0V
ON CHARACTERISTICS (Note 5)
DC Current Gain hFE
40
70
100
60
30
⎯
⎯
300
⎯
⎯
⎯
IC = 100µA, VCE = 1.0V
IC = 1.0mA, VCE = 1.0V
IC = 10mA, VCE = 1.0V
IC = 50mA, VCE = 1.0V
IC = 100mA, VCE = 1.0V
Collector-Emitter Saturation Voltage VCE(SAT) ⎯ 0.20
0.30 V IC = 10mA, IB = 1.0mA
IC = 50mA, IB = 5.0mA
Base-Emitter Saturation Voltage VBE(SAT) 0.65
⎯
0.85
0.95 V IC = 10mA, IB = 1.0mA
IC = 50mA, IB = 5.0mA
SMALL SIGNAL CHARACTERISTICS
Output Capacitance Cobo ⎯ 4.0 pF VCB = 5.0V, f = 1.0MHz, IE = 0
Input Capacitance Cibo ⎯ 8.0 pF VEB = 0.5V, f = 1.0MHz, IC = 0
Input Impedance hie 1.0 10 kΩ
Voltage Feedback Ratio hre 0.5 8.0 x 10-4
Small Signal Current Gain hfe 100 400 ⎯
Output Admittance hoe 1.0 40 μS
VCE = 10V, IC = 1.0mA,
f = 1.0kHz
Current Gain-Bandwidth Product fT 300 ⎯ MHz VCE = 20V, IC = 10mA,
f = 100MHz
Noise Figure NF ⎯ 5.0 dB
VCE = 5.0Vdc, IC = 100μAdc,
RS = 1.0KΩ, f = 1.0MHz
SWITCHING CHARACTERISTICS
Delay Time td ⎯ 35 ns
Rise Time tr ⎯ 35 ns
VCC = 3.0V, IC = 10mA,
VBE(off) = - 0.5V, IB1 = 1.0mA
Storage Time ts ⎯ 200 ns VCC = 3.0V, IC = 10mA
Fall Time tf ⎯ 50 ns IB1 = IB2 = 1.0mA
Notes: 5. Short duration pulse test used to minimize self-heating effect.
0
100
150
50
200
250
0100200
P
,
P
O
WE
R
DISSI
P
A
T
I
O
N (mW)
d
T , AMBIENT TEMPERATURE (°C)
Fig. 1, Power Derating Curve
A
0
5
15
10
0.1 110 100
C
, I
N
P
U
T
C
A
P
A
C
I
T
A
N
C
E (pF)
C , OUTPUT CAPACITANCE (pF)
IBO
OBO
V , COLLECTOR-BASE VOLTAGE (V)
Fig. 2, Input and Output Capacitance vs.
Collector-Base Voltage
CB
0.01
0.1
1
0.1 1 10 100 1,000
V,
C
O
LLE
C
T
O
R
-EMI
T
T
E
R
(V)
SATURATION VOLTAGE
CE(SAT)
I , COLLECTOR CURRENT (mA)
Fig. 4, Typical Collector-Emitter
Saturation Voltage vs. Collector Current
C
1
10
1,000
100
0.1 110 1,000
100
h, D
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C
C
U
R
R
E
N
T
G
AI
N
FE
I , COLLECTOR CURRENT (mA)
Fig. 3, Typical DC Current Gain vs. Collector Current
C
T = -25°C
A
T = +25°C
A
T = 125°C
A
V = 1.0V
CE
0.1
1
10
0.1 110 100 1,000
V , BASE-EMI
T
T
E
R
(V)
SATURATION VOLTAGE
BE(SAT)
I , COLLECTOR CURRENT (mA)
Fig. 5, Typical Base-Emitter
Saturation Voltage vs. Collector Current
C
Ordering Information (Note 6)
Device Packaging Shipping
MMBT3904T-7-F SOT-523 3000/Tape & Reel
Notes: 6. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Marking Information
1NYM
1N = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: N = 2002)
M = Month (ex: 9 = September)
Date Code Key
Year 1998 1999 2000 2001 2002 2003 2004 2005 2006 2007 2008 2009 2010 2011 2012
Code J K L M N P R S T U V W X Y Z
Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec
Code 1 2 3 4 5 6 7 8 9 O N D
DS30270 Rev. 8 - 2
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MMBT3904T
© Diodes Incorporated
IMPORTANT NOTICE
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product
described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall
assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website,
harmless against all damages.
LIFE SUPPORT
Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written
approval of the President of Diodes Incorporated.
