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ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number
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Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s
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©2009 Fairchild Semiconductor Corporation HGTG30N60C3D Rev. B
File Number 4041.2
HGTG30N60C3D
63A, 600V, UFS Series N-Channel IGBT
with Anti-Parallel Hyperfast Diodes
The HGTG30N60C3D is a MOS gated high voltage
switching device combining the best features of MOSFETs
and bipolar transistors. The device has the high input
impedance of a MOSFET and the low on-state conduction
loss of a bipolar transistor. The much lower on-state voltage
drop varies only moderately between 25oC and 150oC. The
IGBT used is the development type TA49051. The diode
used in anti-parallel with the IGBT is the development type
TA49053.
The IGBT is ideal for many hi gh voltage switching applica tions
operating at moderate frequencies wh ere low conductio n
losses are essential.
Formerly Developmental Type TA49014.
Symbol
Features
• 63A, 600V at TC = 25oC
• Typical Fall Time . . . . . . . . . . . . . . . 230ns at TJ = 150oC
• Short Circuit Rating
• Low Conduction Loss
• Hyperfast Anti-Parallel Diode
Packaging JEDEC STYLE TO-247
Ordering Information
PART NUMBER PACKAGE BRAND
HGTG30N60C3D TO-247 G30N60C3D
NOTE: When ordering, use the entire part number.
C
E
G
C
E
G
INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS
4,364,073 4,417,385 4,430,792 4,443,931 4,466,176 4,516,143 4,532,534 4,587,713
4,598,461 4,605,948 4,620,211 4,631,564 4,639,754 4,639,762 4,641,162 4,644,637
4,682,195 4,684,413 4,694,313 4,717,679 4,743,952 4,783,690 4,794,432 4,801,986
4,803,533 4,809,045 4,809,047 4,810,665 4,823,176 4,837,606 4,860,080 4,883,767
4,888,627 4,890,143 4,901,127 4,904,609 4,933,740 4,963,951 4,969,027
Data Sheet January 2009
©2009 Fairchild Semiconductor Corporation HGTG30N60C3D Rev. B
Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified HGTG30N60C3D UNITS
Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .BVCES 600 V
Collector Current Continuous
At TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .IC25 63 A
At TC = 110oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC110 30 A
Average Diode Forward Current at 110oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I(AVG) 25 A
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ICM 252 A
Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VGES ±20 V
Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGEM ±30 V
Switching Safe Operating Area at TJ = 15 0oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . SSOA 60A at 600V
Power Dissipation Total at TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD208 W
Power Dissipation Derating TC > 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.67 W/oC
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG -40 to 150 oC
Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL260 oC
Short Circuit Withstand Time (Note 2) at VGE = 15V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .tSC 4µs
Short Circuit Withstand Time (Note 2) at VGE = 10V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . tSC 15 µs
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied .
NOTES:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. VCE(PK) = 360V, TJ = 125oC, RG = 25Ω.
Electrical Specifications TC = 25oC, Unless Otherwise Specified
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
Collector to Emitter Breakdown Voltage BVCES IC = 250µA, VGE = 0V 600 - - V
Emitter to Collector Breakdown Voltage BVECS IC = 10mA, VGE = 0V 15 25 - V
Collector to Emitter Leakage Current ICES VCE = BVCES TC = 25oC - - 250 µA
VCE = BVCES TC = 150oC--3.0mA
Collector to Emitter Saturation Voltage VCE(SAT) IC = IC110,
VGE = 15V TC = 25oC-1.51.8V
TC = 150oC-1.72.0V
Gate to Emitter Threshold Voltage VGE(TH) IC = 250µA,
VCE = VGE TC = 25oC3.05.26.0V
Gate to Emitter Leakage Current IGES VGE = ±20V - - ±100 nA
Switching SOA SSOA TJ = 150oC,
VGE = 15V,
RG = 3Ω,
L = 100µH
VCE(PK) = 480V 200 - - A
VCE(PK) = 600V 60 - - A
Gate to Emitter Plateau Voltage VGEP IC = IC110, VCE = 0.5 BVCES -8.1- V
On-State Gate Charge QG(ON) IC = IC110,
VCE = 0.5 BVCES VGE = 15V - 162 180 nC
VGE = 20V - 216 250 nC
Current Turn-On Delay Time td(ON)I TJ = 150oC,
ICE = IC110,
VCE(PK) = 0.8 BVCES,
VGE = 15V,
RG = 3Ω,
L = 100µH
-40-ns
Current Rise Time trI -45-ns
Current Turn-Off Delay Time td(OFF)I - 320 400 ns
Current Fall Time tfI - 230 275 ns
Turn-On Energy EON - 1050 - µJ
Turn-Off Energy (Note 3) EOFF - 2500 - µJ
Diode Forward Voltage VEC IEC = 30A - 1.75 2.2 V
HGTG30N60C3D
©2009 Fairchild Semiconductor Corporation HGTG30N60C3D Rev. B
Diode Reverse Recovery Time trr IEC = 30A, dIEC/dt = 100A/µs - 52 60 ns
IEC = 1.0A, dIEC/dt = 100A/µs - 42 50 ns
Thermal Resistance RθJC IGBT - - 0.6 oC/W
Diode - - 1.3 oC/W
NOTE:
3. Turn-Off Energy Loss (EOFF) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending
at the point where the collector current equals zero (ICE = 0A). The HGTG30N60C3D was tested per JEDEC standard No. 24-1 Method for
Measurement of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss. Turn-On losses include
diode losses.
Electrical Specifications TC = 25oC, Unless Otherwise Specified
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
Typical Performance Curves
FIGURE 1. TRANSFER CHARACTERISTICS FIGURE 2. SATURATION CHARACTERISTICS
FIGURE 3. COLLECTOR TO EMITTER ON-STATE VOLTAGE FIGURE 4. COLLECTOR TO EMITTER ON-STATE VOLTAGE
ICE, COLLECTOR TO EMITTER CURRENT (A)
VGE, GATE TO EMITTER VOLTAGE (V)
TC = 25oC
TC = -40oC
TC = 150oC
4681012
0
25
50
75
100
125
150 PULSE DURATION = 250µs
DUTY CYCLE <0.5%, VCE = 10V
ICE, COLLECTOR TO EMITTER CURRENT (A)
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
PULSE DURATION = 250µs, DUTY CYCLE <0.5%, TC = 25oC
00246810
10.0V
9.5V
9.0V
8.5V
25
50
75
100
125
150
7.0V
7.5V
8.0V
12.0V
VGE = 15.0V
ICE, COLLECTOR TO EMITTER CURRENT (A)
0
25
50
012345
75
100
125
150 PULSE DURATION = 250µs
DUTY CYCLE <0.5%, VGE = 10V TC = -40oC
TC = 25oC
TC = 150oC
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
ICE, COLLECTOR TO EMITTER CURRENT (A)
0
25
50
75
125
150
012345
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
100
PULSE DURATION = 250µs
DUTY CYCLE <0.5%
VGE = 15V TC = 150oC
TC = 25oC
TC = -40oC
HGTG30N60C3D
©2009 Fairchild Semiconductor Corporation HGTG30N60C3D Rev. B
FIGURE 5. MAX. DC COLLECTOR CURRENT vs CASE
TEMPERATURE FIGURE 6. SHORT CIRCUIT WITHSTAN D TIME
FIGURE 7. TURN-ON DELAY TIME vs COLLECT OR TO
EMITTER CURRENT FIGURE 8. TURN-OFF DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
FIGURE 9. TURN-ON RISE TIME vs COLLECTOR T O
EMITTER CURRENT FIGURE 10. TURN-OFF F ALL TIME vs COLLECTOR TO
EMITTER CURRENT
Typical Performance Curves (Continued)
25 50 75 100 125 150
0
10
20
30
40
50
60
70
ICE, DC COLLECT OR CURRENT (A)
TC, CASE TEMPERATURE (oC)
VGE = 15V
ISC, PEAK SHORT CIRCUIT CURRENT (A)
100
250
300
350
450
tSC, SHORT CIRCUIT WITHSTAND TIME (µs)
10 11 12
VGE, GATE TO EMITTER VOLTAGE (V)
14 1513
500
400
200
150
ISC
tSC
5
10
15
20
25 VCE = 360V, RG = 25Ω, TJ = 125oC
td(ON)I, TURN-ON DELAY TIME (ns)
10
20
50
30
40
10 20 30 40
ICE, COLLECTOR TO EMITTER CURRENT (A)
100
VGE = 15V
50 60
200 TJ = 150oC, RG = 3Ω, L = 100µH, VCE(PK) = 480V
VGE = 10V
ICE, COLLECTOR TO EMITTER CURRENT (A)
td(OFF)I, TURN-OFF DELAY TIME (ns)
500
400
300
200
10010 20 30 40 50 60
TJ = 150oC, RG = 3Ω, L = 100µH, VCE(PK) = 480V
VGE = 15V
VGE = 10V
ICE, COLLECTOR TO EMITTER CURRENT (A)
trI, TURN-ON RISE TIME (ns)
10
100
500
10 20 30 40 50 60
TJ = 150oC, RG = 3Ω, L = 100µH, VCE(PK) = 480V
VGE = 15V
VGE = 10V
ICE, COLLECTOR TO EMITTER CURRENT (A)
tfI, FALL TIME (ns)
10010 20 30 40 50 60
200
300
400
500 TJ = 150oC, RG = 3Ω, L = 100µH, VCE(PK) = 480V
VGE = 15V
VGE = 10V
HGTG30N60C3D
©2009 Fairchild Semiconductor Corporation HGTG30N60C3D Rev. B
FIGURE 1 1. TURN-ON ENERGY LOSS vs COLLECTOR TO
EMITTER CURRENT FIGURE 12. TURN-OFF ENERGY LOSS vs COLLECTOR TO
EMITTER CURRENT
FIGURE 13. OPERA TING FREQUENCY vs COLLECTOR T O
EMITTER CURRENT FIGURE 14. SWITCHING SAFE OPERATING AREA
FIGURE 15. CAP ACITANCE vs COLLECTOR TO EMITTER
VOLTAGE FIGURE 16. GATE CHARGE WAVEFORMS
Typical Performance Curves (Continued)
ICE, COLLECTOR TO EMITTER CURRENT (A)
010 20 30 40
EON, TURN-ON ENERGY LOSS (mJ)
VGE = 15V
1.0
2.0
3.0
4.0
5.0
6.0
7.0
8.0
50 60
TJ = 150oC, RG = 3Ω, L = 100µH, VCE(PK) = 480V
VGE = 10V
ICE, COLLECTOR TO EMITTER CURRENT (A)
EOFF, TURN-OFF ENERGY LOSS (mJ)
10 20 30 40 50 60
1.0
2.0
3.0
4.0
5.0
6.0
0
TJ = 150oC, RG = 3Ω, L = 100µH, VCE(PK) = 480V
VGE = 10V or 15V
ICE, COLLECTOR TO EMITTER CURRENT (A)
fMAX, OPERATING FREQUENCY (kHz)
510203040
10
100
500 TJ = 150oC, TC = 75oC
RG = 3Ω, L = 100µH
fMAX2 = (PD - PC)/(EON + EOFF)
PD = ALLOWABLE DISSIPA T ION
PC = CONDUCTION DISSIPATION
fMAX1 = 0.05/(tD(OFF)I + tD(ON)I)
(DUTY FACTOR = 50%)
RθJC = 0.6oC/W
VGE = 15V
VGE = 10V
160 VCE, COLLECTOR TO EMITTER VOLTAGE (V)
ICE, COLLECTOR TO EMITTER CURRENT (A)
0 100 200 300 400 500 600
0
50
100
150
200
250
LIMITED BY
CIRCUIT
TJ = 150oC, VGE = 15V, L = 100µH
COES
CRES
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
0 5 10 15 20 25
0
1000
2000
3000
4000
5000
6000
7000
8000
C, CAPACITANCE (pF)
FREQUENCY = 400kHz
CIES
VGE, GATE TO EMITTER VOLTAGE (V)
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
QG, GATE CHARGE (nC)
IG (REF) = 3.54mA, RL = 20Ω, TC = 25oC
0
240
120
360
480
600 15
12
9
6
3
VCE = 400V
VCE = 200V
VCE = 600V
0
0 40 80 120 160 200
HGTG30N60C3D
©2009 Fairchild Semiconductor Corporation HGTG30N60C3D Rev. B
HGTG30N60C3D
t
1
, RECTANGULAR PULSE DURATION (s )
10
-5
10
-3
10
0
10
1
10
-4
t
1
t
2
P
D
DUTY FACTOR, D = t
1
/ t
2
PEAK T
J
= (P
D
X Z
θ
JC
X R
θ
JC
) + T
C
10
-1
10
-2
SINGLE PULSE
10
0
Z
θ
JC
, NORMALIZED THERMAL RESPONSE
10
-1
10
-2
0.5
0.2
0.1
0.05
0.01
0.02
Figure 18. IGBT NORMALIZED TRANSIENT THERMAL IMPEDANCE, JUNCTION TO CASE
Typical Performance Curves (continued)
1 10 100 1000
0.01
0.1
1
10
100
1ms
10ms
DC
*Notes:
1. TC = 25oC
2. TJ = 150oC
3. S in gle P u ls e
10µs
100µs
Collector Current, Ic [A]
Collector-Emitter Voltage, VCE [V]
500
Figure 17. SOA Characteristics
©2009 Fairchild Semiconductor Corporation HGTG30N60C3D Rev. B
HGTG30N60C3D
25oC
100oC
0.5 1.0 1.5 2.5 3.0
IEC, FORWARD CURRENT (A)
VEC, FORWARD VOLTAGE (V)
02.0
150oC
1
10
200 60
40
30
20
10
0
tr, RECOVERY TIMES (ns)
IEC, FORWARD CURRENT (A)
50
1 5 10 30
trr
ta
tb
TC = 25oC, dIEC/dt = 100A/µs
R
G
= 3
Ω
L = 100
µ
H
V
DD
= 480V
+
-
RHRP3060
t
fI
t
d(OFF)I
t
rI
t
d(ON)I
10%
90%
10%
90%
V
CE
I
CE
V
GE
E
OFF
E
ON
Figure 19. DIODE FORWARD CURRENT vs FORWARD
VOLTAGE DROP Figure 20. RECOVERY TIME vs FORWARD CURRENT
Test Circuit and Waveforms
Figure 21. INDUCTIVE SWITCHING TEST CIRCUIT Figure 22. SWITCHING TEST WAVEFORMS
Typical Performance Curves (continued)
©2009 Fairchild Semiconductor Corporation HGTG30N60C3D Rev. B
Handling Precautions for IGBTs
Insulated Gate Bipolar Transistors are susceptible to gate-
insulation dama ge by the elec trost ati c discharge of ene rgy
through the devices. When handling the se devi ces, ca re
should be exercised to assure that the st atic charge built in
the handler’s body capacit a nce is not d ischarged throu gh the
device. With proper handling and a pplication pro cedures,
however, IGBTs are currently being extensively used in
production by numerous equipment manufacture rs in military,
industrial and consumer appl ications, with virtually no damage
problems due to electrost atic disch arge. IGBTs can be
handled safely if the following basic pre cautions are t ake n:
1. Prior to assembly into a circuit, all leads should be kept
shorted together either by the use of metal shorting
springs or by the insertion into conductive material such
as “ECCOSORBD™ LD26” or equivalent.
2. When devices are removed by hand from their carriers,
the hand being used should be grounded by any suitable
means - for example, with a metallic wristband.
3. Tips of soldering irons should be grounded.
4. Devices should never be inserted into or removed from
circuits with power on.
5. Gate V olt age Rating - Never exceed the gate-volt age
rating of VGEM. Exceeding the rated VGE can result in
permanent damage to the oxide layer in the ga te reg ion.
6. Gate Termination - The gates of these devi ces are
essentially capacito rs. Circuit s that leave the gate
open-circuited or floati ng should be avoided . These
conditions can result in turn-on of the device due to voltage
buildup on the input cap acitor d ue to leakage currents or
pickup.
7. Gate Protection - These devices do not have an internal
monolithic zener diode from gate to emitter. If gate
protection is required an external zener is recommended.
Operating Frequency Information
Operating frequency information for a typical device (Figure 13)
is presented as a guide for estimating device performance
for a specific application. Other typical frequency vs collector
current (ICE) plots are possible using the information shown
for a typical unit in Figures 4, 7, 8, 11 and 12. The operating
frequency plot (Figure 13) of a typical device shows fMAX1 or
fMAX2 whichever is smaller at each point. The information is
based on measurements of a typical device and is bounded
by the maximum rated junction temperature.
fMAX1 is defined by fMAX1 = 0.05/(tD(OFF)I + tD(ON)I).
Deadtime (the denominator) has been arbitrarily held to 10%
of the on-state time for a 50% duty factor. Other definitions
are possible. tD(OFF)I and tD(ON)I are defined in Figure 21.
Device turn-off delay can establish an additional frequency
limiting condition for an application other than TJM. tD(OFF)I
is important when controlling output ripple under a lightly
loaded condition.
fMAX2 is defined by fMAX2 = (PD - PC)/(EOFF + EON). The
allowable dissipation (PD) is defined by PD=(T
JM -T
C)/RθJC.
The sum of device switching and conduction losses must
not exceed PD. A 50% duty factor was used (Figure 13)
and the conduction losses (PC) are approximat ed by
PC=(V
CE xI
CE)/2.
EON and EOFF are defined in the switching waveforms
shown in Figure 21. EON is the integral of the inst antaneous
power loss (ICE x VCE) during turn-on and EOFF is the
integral of the instantaneous power loss during turn-off. All
tail losses are included in the calculation for EOFF; i.e. the
collector current equals zero (ICE = 0).
HGTG30N60C3D
www.onsemi.com
1
ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
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ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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