Semiconductor Group 1
NPN Silicon AF Transistors BCW 60
BCX 70
5.91
Type Ordering Code
(tape and reel)
Marking Package1)
Pin Configuration
BCW 60 A
BCW 60 B
BCW 60 C
BCW 60 D
BCW 60 FF
BCW 60 FN
BCX 70 G
BCX 70 H
BCX 70 J
BCX 70 K
Q62702-C1517
Q62702-C1497
Q62702-C1476
Q62702-C1477
Q62702-C1529
Q62702-C1567
Q62702-C1539
Q62702-C1481
Q62702-C1552
Q62702-C1571
AAs
ABs
ACs
ADs
AFs
ANs
AGs
AHs
AJs
AKs
SOT-23
B E C
123
1) For detailed information see chapter Package Outlines.
●For AF input stages and driver applications
●High current gain
●Low collector-emitter saturation voltage
●Low noise between 30 Hz and 15 kHz
●Complementary types: BCW 61, BCX 71 (PNP)
Semiconductor Group 2
Maximum Ratings
Parameter Symbol Values Unit
Collector-emitter voltage VCE0 V
Peak collector current ICM
Collector current ICmA
Junction temperature Tj˚C
Total power dissipation, TS = 71 ˚C Ptot mW
Storage temperature range Tstg
Collector-base voltage VCB0
Thermal Resistance
32
100
200
330
150
– 65 … + 150
Emitter-base voltage VEB0
Peak base current IBM 200
32 45
3232 45
BCW 60
FF
BCW 60 BCX 70
5
Junction - ambient1) Rth JA K/W
Junction - soldering point Rth JS
≤ 310
≤ 240
1) Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm2 Cu.
BCW 60
BCX 70
Semiconductor Group 3
Electrical Characteristics
at TA = 25 ˚C, unless otherwise specified.
VCollector-emitter breakdown voltage
I
C = 10 mA BCW 60, BCW 60 FF
BCX 70
V(BR)CE0 32
45 –
––
–
nA
nA
µA
µA
Collector cutoff current
VCB = 32 V BCW 60, BCW 60 FF
VCB = 45 V BCX 70
VCB = 32 V, TA = 150 ˚C BCW 60, BCW 60 FF
VCB = 45 V, TA = 150 ˚C BCX 70
ICB0 –
–
–
–
–
–
–
–
20
20
20
20
UnitValuesParameter Symbol
min. typ. max.
DC characteristics
Collector-base breakdown voltage
I
C = 10 µA BCW 60, BCW 60 FF
BCX 70
V(BR)CB0 32
45 –
––
–
Emitter-base breakdown voltage
I
E = 1 µAV(BR)EB0 5––
–
DC current gain 1)
I
C = 10 µA, VCE = 5 V
BCW 60 A, BCX 70 G
BCW 60 B, BCX 70 H
BCW 60 FF, BCW 60 C, BCX 70 J
BCW 60 FN, BCW 60 D, BCX 70 K
I
C = 2 mA, VCE = 5 V
BCW 60 A, BCX 70 G
BCW 60 B, BCX 70 H
BCW 60 FF, BCW 60 C, BCX 70 J
BCW 60 FN, BCW 60 D, BCX 70 K
I
C = 50 mA, VCE = 1 V
BCW 60 A, BCX 70 G
BCW 60 B, BCX 70 H
BCW 60 FF, BCW 60 C, BCX 70 J
BCW 60 FN, BCW 60 D, BCX 70 K
hFE
20
20
40
100
120
180
250
380
50
70
90
100
140
200
300
460
170
250
350
500
–
–
–
–
–
–
–
–
220
310
460
630
–
–
–
–
nAEmitter cutoff current
VEB = 4 V IEB0 ––20
1) Pulse test: t≤300 µs, D≤ 2%.
BCW 60
BCX 70
Semiconductor Group 4
Electrical Characteristics
at TA = 25 ˚C, unless otherwise specified.
V
Collector-emitter saturation voltage1)
I
C = 10 mA, IB = 0.25 mA
I
C = 50 mA, IB = 1.25 mA
VCEsat –
–0.12
0.20 0.25
0.55
Base-emitter saturation voltage1)
I
C = 10 mA, IB = 0.25 mA
I
C = 50 mA, IB = 1.25 mA
VBEsat –
–0.70
0.83 0.85
1.05
Base-emitter voltage
I
C = 10 µA, VCE = 5 V
I
C = 2 mA, VCE = 5 V
I
C = 50 mA, VCE = 1 V 1)
VBE (on) –
0.55
–
0.52
0.65
0.78
–
0.75
–
DC characteristics
MHzTransition frequency
I
C = 20 mA, VCE = 5 V, f = 100 MHz fT– 250 –
AC characteristics
pFOutput capacitance
VCB = 10 V, f = 1 MHz Cobo –3–
Input capacitance
VEB = 0.5 V, f = 1 MHz Cibo –8–
kΩShort-circuit input impedance
I
C = 2 mA, VCE = 5 V, f = 1 kHz
BCW 60 A, BCX 70 G
BCW 60 B, BCX 70 H
BCW 60 FF, BCW 60 C, BCX 70 J
BCW 60 FN, BCW 60 D, BCX 70 K
h11e
–
–
–
–
2.7
3.6
4.5
7.5
–
–
–
–10–4
Open-circuit reverse voltage transfer ratio
I
C = 2 mA, VCE = 5 V, f = 1 kHz
BCW 60 A, BCX 70 G
BCW 60 B, BCX 70 H
BCW 60 FF, BCW 60 C, BCX 70 J
BCW 60 FN, BCW 60 D, BCX 70 K
h12e
–
–
–
1.5
2.0
2.0
3.0
–
–
–
UnitValuesParameter Symbol
min. typ. max.
1) Pulse test: t≤300 µs, D≤ 2%.
BCW 60
BCX 70
Semiconductor Group 5
Electrical Characteristics
at TA = 25 ˚C, unless otherwise specified.
dBNoise figure
I
C = 0.2 mA, VCE = 5 V, RS = 2 kΩ
f = 1 kHz, ∆f = 200 Hz
BCW 60 A to BCX 70 K
BCW 60 FF, BCW 60 FN
F
–
–2
1–
2
UnitValuesParameter Symbol
min. typ. max.
AC characteristics
–Short-circuit forward current transfer ratio
I
C = 2 mA, VCE = 5 V, f = 1 kHz
BCW 60 A, BCX 70 G
BCW 60 B, BCX 70 H
BCW 60 FF, BCW 60 C, BCX 70 J
BCW 60 FN, BCW 60 D, BCX 70 K
h21e
–
–
–
–
200
260
330
520
–
–
–
–
µsOpen-circuit output admittance
I
C = 2 mA, VCE = 5 V, f = 1 kHz
BCW 60 A, BCX 70 G
BCW 60 B, BCX 70 H
BCW 60 FF, BCW 60 C, BCX 70 J
BCW 60 FN, BCW 60 D, BCX 70 K
h22e
–
–
–
–
18
24
30
50
–
–
–
–
µVEquivalent noise voltage
I
C = 0.2 mA, VCE = 5 V, RS = 2 kΩ
f = 10 Hz … 50 Hz
BCW 60 FF, BCW 60 FN
Vn– – 0.135
BCW 60
BCX 70
Semiconductor Group 6
Total power dissipation Ptot =f(TA*; TS)
* Package mounted on epoxy
Permissible pulse load Ptot max/Ptot DC = f (tp)
Collector-base capacitance CCB0 = f (VCB0)
Emitter-base capacitance CEB0 = f (VEB0)
Transition frequency fT=f(IC)
VCE = 5 V
BCW 60
BCX 70
Semiconductor Group 7
Base-emitter saturation voltage
IC=f(VBEsat)
hFE = 40
Collector current IC = f (VBE)
VCE = 5 V
Collector-emitter saturation voltage
IC=f(VCEsat)
hFE = 40
DC current gain hFE =f(IC)
VCE = 5 V
BCW 60
BCX 70
Semiconductor Group 8
Collector cutoff current ICB0 =f(TA)
h parameter he=f(VCE)
IC = 2 mA
h parameter he=f(IC)
VCE = 5 V
Noise figure F=f(VCE)
IC = 0.2 mA, RS = 2 kΩ,f = 1 kHz
BCW 60
BCX 70
Semiconductor Group 9
Noise figure F=f(f)
IC = 0.2 mA, RS = 2 kΩ,VCE = 5 V
Noise figure F=f(IC)
VCE = 5 V, f = 1 kHz
Noise figure F=f(IC)
VCE = 5 V, f = 120 Hz
Noise figure F=f(IC)
VCE = 5 V, f = 10 kHz
BCW 60
BCX 70