Semiconductor Components Industries, LLC, 2004
June, 2004 − Rev. 3 1Publication Order Number:
BC846AWT1/D
BC846AWT1, BC847AWT1,
BC848AWT1 Series
General Purpose
Transistors
NPN Silicon
These transistors are designed for general purpose amplifier
applications. They are housed in the SC−70/SOT−323 which is
designed for low power surface mount applications.
Features
•Pb−Free Packages are Available
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector-Emitter Voltage BC846
BC847
BC848
VCEO 65
45
30
V
Collector-Base Voltage BC846
BC847
BC848
VCBO 80
50
30
V
Emitter-Base Voltage BC846
BC847
BC848
VEBO 6.0
6.0
5.0
V
Collector Current − Continuous IC100 mAdc
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits
are exceeded, device functional operation is not implied, damage may occur
and reliability may be affected.
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation FR−5 Board,
(Note 1) TA = 25°C PD150 °C/W
Thermal Resistance,
Junction−to−Ambient RJA 833 °C/W
Total Device Dissipation PD2.4 mW/°C
Junction and Storage Temperature TJ, Tstg −55 to
+150 °C
1. FR−5 = 1.0 x 0.75 x 0.062 in.
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SC−70/SOT−323
CASE 419
STYLE 3
MARKING DIAGRAM
xx = Specific Device Code
D = Date Code
xxD
COLLECTOR
3
1
BASE
2
EMITTER
12
3
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
ORDERING INFORMATION
BC846AWT1, BC847AWT1, BC848AWT1 Series
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2
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector−Emitter Breakdown Voltage BC846 Series
(IC = 10 mA) BC847 Series
BC848 Series
V(BR)CEO 65
45
30
−
−
−
−
−
−
V
Collector−Emitter Breakdown Voltage BC846 Series
(IC = 10 A, VEB = 0) BC847 Series
BC848 Series
V(BR)CES 80
50
30
−
−
−
−
−
−
V
Collector−Base Breakdown Voltage BC846 Series
(IC = 10 A) BC847 Series
BC848 Series
V(BR)CBO 80
50
30
−
−
−
−
−
−
V
Emitter−Base Breakdown Voltage BC846 Series
(IE = 1.0 A) BC847 Series
BC848 Series
V(BR)EBO 6.0
6.0
5.0
−
−
−
−
−
−
V
Collector Cutoff Current (VCB = 30 V)
(VCB = 30 V, TA = 150°C) ICBO −
−−
−15
5.0 nA
A
ON CHARACTERISTICS
DC Current Gain BC846A, BC847A, BC848A
(IC = 10 A, VCE = 5.0 V) BC846B, BC847B, BC848B
BC847C, BC848C
(IC = 2.0 mA, VCE = 5.0 V) BC846A, BC847A, BC848A
BC846B, BC847B, BC848B
BC847C, BC848C
hFE −
−
−
110
200
420
90
150
270
180
290
520
−
−
−
220
450
800
−
Collector−Emitter Saturation V oltage (IC = 10 mA, IB = 0.5 mA)
Base−Emitter Saturation Voltage (IC = 100 mA, IB = 5.0 mA) VCE(sat) −
−−
−0.25
0.6 V
Base−Emitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA)
Base−Emitter Saturation Voltage (IC = 100 mA, IB = 5.0 mA) VBE(sat) −
−0.7
0.9 −
−V
Base−Emitter Voltage (IC = 2.0 mA, VCE = 5.0 V)
Base−Emitter Voltage (IC = 10 mA, VCE = 5.0 V) VBE(on) 580
−660
−700
770 mV
SMALL−SIGNAL CHARACTERISTICS
Current−Gain − Bandwidth Product
(IC = 10 mA, VCE = 5.0 Vdc, f = 100 MHz) fT100 − − MHz
Output Capacitance (VCB = 10 V, f = 1.0 MHz) Cobo − − 4.5 pF
Noise Figure (IC = 0.2 mA, VCE = 5.0 Vdc, RS = 2.0 k, f = 1.0 kHz, BW = 200 Hz) NF − − 10 dB
BC846AWT1, BC847AWT1, BC848AWT1 Series
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3
BC847 SERIES & BC848 SERIES
Figure 1. Normalized DC Current Gain
IC, COLLECTOR CURRENT (mAdc)
2.0
Figure 2. “Saturation” and “On” Voltages
IC, COLLECTOR CURRENT (mAdc)
0.2 0.5 1.0 10 20 50
0.2 100
Figure 3. Collector Saturation Region
IB, BASE CURRENT (mA)
Figure 4. Base−Emitter Temperature Coefficient
IC, COLLECTOR CURRENT (mA)
2.0 5.0 200
0.6
0.7
0.8
0.9
1.0
0.5
0
0.2
0.4
0.1
0.3
1.6
1.2
2.0
2.8
2.4
1.2
1.6
2.0
0.02 1.0 10
020
0.1
0.4
0.8
hFE, NORMALIZED DC CURRENT GAIN
V, VOLTAGE (VOLTS)
VCE, COLLECTOR−EMITTER VOLTAGE (V)
VB, TEMPERATURE COEFFICIENT (mV/ C)°θ
1.5
1.0
0.8
0.6
0.4
0.3
0.2 0.5 1.0 10 20 50
2.0 10070
307.05.03.00.70.30.1
0.2 1.0 10 100
TA = 25°C
VBE(sat) @ IC/IB = 10
VCE(sat) @ IC/IB = 10
VBE(on) @ VCE = 10 V
VCE = 10 V
TA = 25°C
−55°C to +125°CTA = 25°C
IC = 50 mA IC = 100 mA
IC = 200 mA
IC =
20 mA
IC =
10 mA
1.0
Figure 5. Capacitances
VR, REVERSE VOLTAGE (VOLTS)
10
Figure 6. Current−Gain − Bandwidth Product
IC, COLLECTOR CURRENT (mAdc)
0.4 0.6 1.0 10 20
1.0 2.0 6.0 40
80
100
200
300
400
60
20
40
30
7.0
5.0
3.0
2.0
0.7 1.0 10 202.0 50
307.05.03.00.5
VCE = 10 V
TA = 25°C
C, CAPACITANCE (pF)
f, CURRENT−GAIN − BANDWIDTH PRODUCT (MHz)
T
0.8 4.0 8.0
TA = 25°C
Cob
Cib
BC846AWT1, BC847AWT1, BC848AWT1 Series
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4
BC846 SERIES
Figure 7. DC Current Gain
IC, COLLECTOR CURRENT (mA)
Figure 8. “On” Voltage
IC, COLLECTOR CURRENT (mA)
0.8
1.0
0.6
0.2
0.4
1.0
2.0
0.1 1.0 10 100
0.2
0.2
0.5
0.2 1.0 10 200
TA = 25°C
VBE(sat) @ IC/IB = 10
VCE(sat) @ IC/IB = 10
VBE @ VCE = 5.0 V
Figure 9. Collector Saturation Region
IB, BASE CURRENT (mA)
Figure 10. Base−Emitter Temperature Coefficient
IC, COLLECTOR CURRENT (mA)
−1.0
1.2
1.6
2.0
0.02 1.0 10
020
0.1
0.4
0.8
VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS)
VB, TEMPERATURE COEFFICIENT (mV/ C)°θ
0.2 2.0 10 200
1.0
TA = 25°C
200 mA
50 mA
IC =
10 mA
hFE, DC CURRENT GAIN (NORMALIZED)
V, VOLTAGE (VOLTS)
VCE = 5 V
TA = 25°C
00.5 2.0 5.0 20 50 100
0.05 0.2 0.5 2.0 5.0
100 mA
20 mA
−1.4
−1.8
−2.2
−2.6
−3.0
0.5 5.0 20 50 100
−55°C to 125°C
VB for VBE
Figure 11. Capacitance
VR, REVERSE VOLTAGE (VOLTS)
40
Figure 12. Current−Gain − Bandwidth Product
IC, COLLECTOR CURRENT (mA)
0.1 0.2 1.0 50
2.0 2.0 10 100
100
200
500
50
20
20
10
6.0
4.0
1.0 10 50 100
5.0
VCE = 5 V
TA = 25°C
C, CAPACITANCE (pF)
f, CURRENT−GAIN − BANDWIDTH PRODUCT
T
0.5 5.0 20
TA = 25°C
Cob
Cib
BC846AWT1, BC847AWT1, BC848AWT1 Series
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5
DEVICE ORDERING AND SPECIFIC MARKING INFORMATION
Device Specific Marking Code Package Shipping†
BC846AWT1 1A SC−70 (SOT−323)
BC846AWT1G 1A SC−70 (SOT−323)
(Pb−Free) 3,000 / Tape & Reel
BC846BWT1 1B SC−70 (SOT−323) 3,000 / Tape & Reel
BC847AWT1 1E SC−70 (SOT−323) 3,000 / Tape & Reel
BC847BWT1 1F SC−70 (SOT−323)
BC847BWT1G 1F SC−70 (SOT−323)
(Pb−Free) 3,000 / Tape & Reel
BC847CWT1 1G SC−70 (SOT−323)
BC847CWT1G 1G SC−70 (SOT−323)
(Pb−Free) 3,000 / Tape & Reel
BC848AWT1 1J SC−70 (SOT−323) 3,000 / Tape & Reel
BC848BWT1 1K SC−70 (SOT−323)
BC848BWT1G 1K SC−70 (SOT−323)
(Pb−Free) 3,000 / Tape & Reel
BC848CWT1 1L SC−70 (SOT−323) 3,000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifi-
cations Brochure, BRD8011/D.
BC846AWT1, BC847AWT1, BC848AWT1 Series
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6
PACKAGE DIMENSIONS
SC−70 (SOT−323)
CASE 419−04
ISSUE L
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
SOLDERING FOOTPRINT*
STYLE 3:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
CN
AL
D
G
SB
H
J
K
3
12
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
DIM MIN MAX MIN MAX
MILLIMETERSINCHES
A0.071 0.087 1.80 2.20
B0.045 0.053 1.15 1.35
C0.032 0.040 0.80 1.00
D0.012 0.016 0.30 0.40
G0.047 0.055 1.20 1.40
H0.000 0.004 0.00 0.10
J0.004 0.010 0.10 0.25
K0.017 REF 0.425 REF
L0.026 BSC 0.650 BSC
N0.028 REF 0.700 REF
S0.079 0.095 2.00 2.40
0.05 (0.002)
1.9
0.075
0.65
0.025
0.65
0.025
0.9
0.035
0.7
0.028 mm
inches
SCALE 10:1
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to any products herein. SCILLC makes no warranty , representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
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“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
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PUBLICATION ORDERING INFORMATION
N. American Technical Support: 800−282−9855 Toll Free
USA/Canada
Japan: ON Semiconductor, Japan Customer Focus Center
2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051
Phone: 81−3−5773−3850
BC846AWT1/D
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