FEATURES
*Power application
MECHANICAL DATA
* Case: Molded plastic
* Epoxy: UL 94V-O rate flame retardant
* Lead: MIL-STD-202E method 208C guaranteed
* Mounting position: Any
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25OC ambient temperature unless otherwise specified.
TO-220 DARLING TRANSISTOR (NPN)
2007-3
ELECTRICAL CHARACTERISTICS ( @ TA = 25oC unless otherwise noted )
Collector-emitter saturation voltage (IC= 3A,IB= 12mA)
DC current gain (VCE= 3V,IC= 0.5A)
DC current gain (VCE= 3V,IO= 3A)
Output Capacitance (VCB= 10V,IE= 0, f= 0.1MHz)
Note: "Fully ROHS compliant", "100% Sn plating (Pb-free)".
CHARACTERISTICS SYMBOL UNITS
-
-
0.2
2
-
mA
mA
mA
V
pF
Collector-base breakdown voltage (IC= 1mA, IE= 0)
Collector-Emitter breakdown voltage (IC= 30mA, IB= 0)
Emitter cut-off current (VE= -5V,IC= 0)
Collector cut-off current (VCB= 60V ,IE= 0)
Collector cut-off current (VCE= 30V ,IB= 0)
MAXIMUM RATINGES ( @ TA = 25oC unless otherwise noted )
RATINGS
Collector-Base voltage
Collector-Emitter voltage
Emitter-Base voltage
Collector current-continutious
Collector Power dissipation
SYMBOL
RqJA
Tstg
Pd
VCBO
VCEO
VEBO
V(BR)CBO
VCEO(SUS)
ICBO
IEBO
hFE(1)
hFE(2)
VCE(sat)
ICEO
Cob
LIMITS
MAX
60
60
-
-
1000
MIN
UNITS
62.5
60
60
A
V
V
V5
Storage temperature
Thermal Resistance
IC
W
5
2
-65 ~150
oC/W
RqJC 1.92
oC
- 0.5
1000
- 2
-
- 200
-
-
V
Collector-emitter saturation voltage (IC= 5A,IB= 20mA) VCE(sat)
- 4
V
Base-emitter ON voltage (IC= 3A,IB= 12mA) VBE(on)
- 2.5
V
TO-220
Dimensions in inches and (millimeters)
.155 (3.94)
.406 (10.31)
.114 (2.89)
.102 (2.59)
.491 (12.46)
.475 (12.06)
.054 (1.37)
.046 (1.17)
.394 (10.01) .176 (4.47)
.054 (1.37)
.046 (1.17)
.350 (8.90)
.543 (13.8)
.100 (25.4)
TYP
.204 (5.18)
.196 (4.98)
.335 (8.50)
.012 (0.30)
.000 (0.00)
.156 (3.96)
.111 (2.82)
.099 (2.52)
.140 (3.56)
.528 (13.4)
.021 (0.53)
.012 (0.31)
.184 (4.67)
.147 (3.74)
.036 (0.91)
.028 (0.71)
TIP120
RATING AND CHARACTERISTICS CURVES (TIP120)
Figure4 CAPACITANCE
Figure1 THERMAL RESISTANCE
There are two limitations on the power handing ability of a tran-
sistor average junction temperature and second breakdown.Safe
operating aresa curves indicate I
C
-V
CE
limits of the transistor th-
at must be observed for reliable operation, i.e.,the transistor must
not be subjected to greater dissipation than the curves indicate.
The data of Figure 2 is based on T
J(pk)
=150
O
C,T
C
is variable d-
epending on conditions. Second breakdown pulse limit are valid
for duty cycles to 10% provided T
J(pk)
<150
O
C.T
J(pk)
may be calc-
ulated from the data in Figure 1. At high case temperatures, ther-
mal limitations will reduce the power that can be handled to valu-
es less than the limitations imposed by second breakdown.
Figure3 Small-Signal Current Gain
f
,
FREQUENCY, (KHz) V
R,
REVERSE VOLTAGE, (V)
r
(t),
TRANSIENT THERMAL RESISTANCE, (NORMALIZED) hFE, SMALL-SIGNAL CURRENT GAIN
C, CAPACITANCE, (pF)
0.01 0.02 0.05
0.3
0.5
0.7
1.0
0.1 0.2 0.5 1.0 2.0 5.0
Figure2 ACTIVE-REGION SAFE OPERATING AREA
V
CE,
COLLECTOR-EMITTER VOLTAGE, (V)
t
,
TIME, (mS)
1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100
10
1.0 2.0 5.0 10 20 50 100 200 500 1K 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100
0.2
0.1
0.07
0.05
0.03
0.02
0.01
I
C,
COLLECTOR CURRENT, (A)
0.02
0.05
0.1
0.2
0.5
1.0
2.0
5.0
20
10
20 50 100 200 500 1000
50
100
200
300
500
2K
1K
3K
5K
10K
20
30
10
30
50
70
100
200
300
Z
qJC
= r(t) R
qJC
R
qJC
= 1.92
O
C/W MAX.
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t
1
T
J(pk)
-T
C
= P
(pk)
Z
qJC(t)
P
(pk)
DUTY CYCLE, D =t
1
/t
2
t
1
t
2
500uS
1mS
5mS
100uS
T
J
=150
O
C
BONDING WIRE LIMITED
THERMALLY LIMITED
@T
C
=25
O
C(SINGLE PULSE)
SECOND BREAKDOWN LIMITED
CURVE APPLY BELOW
RATED V
CEO
DC
T
C
= 25
O
C
V
CE
= 40 Vdc
I
C
= 3.0 Adc
C
ob
C
jb
T
J
= 25
O
C
SINGLE PULSE
D =0.01
D =0.02
D =0.05
D =0.1
D =0.2
D =0.5
RATING AND CHARACTERISTICS CURVES (TIP120)
Figure6 COLLECTOR SATURATION REGION
Figure5 DC CURRENT GAIN
I
C,
COLLECTOR CURRENT, (A) I
B,
BASE CURRENT, (A)
hFE, DC CURRENT GAIN
V
CE
, COLLECTOR-EMITTER VOLTAGE, (V)
Figure7 "ON" VOLTAGES
I
C,
COLLECTOR CURRENT, (A)
0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10
0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 0.3 0.5 0.7 1.0 3.0 5.02.0 7.0 10 20 30
V
,
VOLTAGE, (V)
0.5
1.0
1.5
2.0
3.0
2.5
200
300
500
2K
1K
3K
5K
20K
10K
1.0
1.4
1.8
2.2
2.6
3.0
T
J
= -55
O
C
T
J
= 25
O
C
T
J
= 150
O
C
V
CE
= 4.0 V
6.0A
4.0A
I
C
= 2.0A
T
J
= 25
O
C
T
J
= 25
O
C
V
BE(sat)
@ I
C
/I
B
=250
V
BE
@ V
CE
=4.0V
V
CE(sat)
@ I
C
/I
B
=250
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changes. Rectron Inc or anyone on its behalf assumes no responsibility or liabi-
lity for any errors or inaccuracies. Data sheet specifications and its information
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ers which may be included on RECTRON data sheets and/ or specifications ca-
n and do vary in different applications and actual performance may vary over ti-
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