MMBT3904LP
Document number: DS31835 Rev. 5 - 2
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May 2015
© Diodes Incorporated
MMBT3904LP
40V NPN SMALL SIGNAL TRANSISTOR IN DFN1006
Features
BVCEO > 40V
IC = 200mA High Collector Current
PD = 1000mW Power Dissipation
0.60mm2 Package Footprint, 13 times Smaller than SOT23
0.5mm Height Package Minimizing Off-Board Profile
Complementary PNP Type MMBT3906LP
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. "Green" Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
Case: X1-DFN1006-3
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish NiPdAu.
Solderable per MIL-STD-202, Method 208
Weight: 0.0008 grams (Approximate)
Ordering Information (Note 4)
Product
Marking
Reel size (inches)
Tape width (mm)
MMBT3904LP-7
1N
7
8mm
MMBT3904LP-7B
1N
7
8mm
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com.
Marking Information
1N = Product Type Marking Code
Top View
Device Schematic
Bottom View
X1-DFN1006-3
Device Symbol
C
E
B
C
E
B
MMBT3904LP-7
MMBT3904LP-7B
Top View
Bar Denotes Base and Emitter Side
Top View
Dot Denotes Collector Side
1N
1N
From date code 1527 (YYWW),
this changes to:
1N
1N
1N
1N
1N
1N
1N
1N
1N
Top View
Bar Denotes Base and Emitter Side
1N
e4
MMBT3904LP
Document number: DS31835 Rev. 5 - 2
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MMBT3904LP
Absolute Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Unit
Collector-Base Voltage
VCBO
60
V
Collector-Emitter Voltage
VCEO
40
V
Emitter-Base Voltage
VEBO
6.0
V
Collector Current
IC
200
mA
Peak Collector Current
ICM
200
mA
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Unit
Power Dissipation
(Note 5)
PD
400
mW
(Note 6)
1000
Thermal Resistance, Junction to Ambient
(Note 5)
RJA
310
C/W
(Note 6)
120
Thermal Resistance, Junction to Lead
(Note 7)
RJL
120
°C/W
Operating and Storage and Temperature Range
TJ, TSTG
-55 to +150
°C
ESD Ratings (Note 8)
Characteristic
Symbol
Value
Unit
JEDEC Class
Electrostatic Discharge - Human Body Model
ESD HBM
4,000
V
3A
Electrostatic Discharge - Machine Model
ESD MM
200
V
B
Notes: 5. For the device mounted on minimum recommended pad layout 1oz copper that is on a single-sided 1.6mm FR4 PCB; device is measured under still air
conditions whilst operating in steady state condition. The entire exposed collector pad is attached to the heatsink.
6. Same as Note 5, except the exposed collector pad is mounted on 25mm x 25mm 2oz copper.
7. Thermal resistance from junction to solder-point (on the exposed collector pad).
8. Refer to JEDEC specification JESD22-A114 and JESD22-A115.
MMBT3904LP
Document number: DS31835 Rev. 5 - 2
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MMBT3904LP
Thermal Characteristics
0.000001 0.0001 0.01 1 100 10,000
0.001
0.01
0.1
1
r(t), TRANSIENT THERMAL RESISTANCE
t1, PULSE DURATION TIME (sec)
Fig. 1 Transient Thermal Resistance
R (t) = r(t) * R
JA JA
R = 310°C/W
JA
Duty Cycle, D = t1/ t2
D = 0.5
D = 0.7
D = 0.9
D = 0.3
D = 0.1
D = 0.05
D = 0.02
D = 0.01
D = 0.005
D = Single Pulse
1,000
1E-06 0.0001 0.01 1 100 10,000
100
10
1
0.1
t1, PULSE DURATION TIME (sec)
Fig. 2 Single Pulse Maximum Power Dissipation
P , PEAK TRANSIENT POIWER (W)
(PK)
Single Pulse
R = 310°C/W
JA
R = r * R
JA(t) (t) JA
T - T = P * R
J A JA(t)
MMBT3904LP
Document number: DS31835 Rev. 5 - 2
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MMBT3904LP
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Min
Max
Unit
Test Condition
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage
BVCBO
60
V
IC = 10µA, IE = 0
Collector-Emitter Breakdown Voltage (Note 9)
BVCEO
40
V
IC = 1.0mA, IB = 0
Emitter-Base Breakdown Voltage
BVEBO
6.0
V
IE = 10µA, IC = 0
Collector Cutoff Current
ICEX
50
nA
VCE = 30V, VEB(OFF) = 3.0V
Base Cutoff Current
IBL
50
nA
VCE = 30V, VEB(OFF) = 3.0V
ON CHARACTERISTICS (Note 9)
DC Current Gain
hFE
40
70
100
60
30
300
IC = 100µA, VCE = 1.0V
IC = 1.0mA, VCE = 1.0V
IC = 10mA, VCE = 1.0V
IC = 50mA, VCE = 1.0V
IC = 100mA, VCE = 1.0V
Collector-Emitter Saturation Voltage
VCE(sat)
0.20
0.30
V
IC = 10mA, IB = 1.0mA
IC = 50mA, IB = 5.0mA
Base-Emitter Saturation Voltage
VBE(sat)
0.65
0.85
0.95
V
IC = 10mA, IB = 1.0mA
IC = 50mA, IB = 5.0mA
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Cobo
4.0
pF
VCB = 5.0V, f = 1.0MHz, IE = 0
Input Capacitance
Cibo
8.5
pF
VEB = 0.5V, f = 1.0MHz, IC = 0
Input Impedance
hie
1.0
10
kΩ
VCE = 10V, IC = 1.0mA,
f = 1.0kHz
Voltage Feedback Ratio
hre
0.5
8.0
x 10-4
Small Signal Current Gain
hfe
100
400
Output Admittance
hoe
1.0
40
µS
Current Gain-Bandwidth Product
fT
300
MHz
VCE = 20V, IC = 10mA,
f = 100MHz
SWITCHING CHARACTERISTICS
Delay Time
td
35
ns
VCC = 3.0V, IC = 10mA,
VBE(off) = - 0.5V, IB1 = 1.0mA
Rise Time
tr
35
ns
Storage Time
ts
200
ns
VCC = 3.0V, IC = 10mA,
IB1 = IB2 = 1.0mA
Fall Time
tf
50
ns
Note: 9. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%.
MMBT3904LP
Document number: DS31835 Rev. 5 - 2
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MMBT3904LP
Typical Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
0.1 1 10 100
I , COLLECTOR CURRENT (mA)
C
Fig. 6 Typical Collector-Emitter Saturation Voltage
vs. Collector Current
0.01
0.1
V , COLLECTOR-EMITTER
SATURATION
CE(SAT) VOLTAGE (V)
T = -55°C
A
I /I = 10
CB
T = 25°C
A
T = 125°C
A
T = 150°C
A
T = 85°C
A
0.01
0.1
1
V , COLLECTOR-EMITTER
SATURATION
CE(SAT) VOLTAGE (V)
0.1 1 10 100
I , COLLECTOR CURRENT (mA)
C
Fig. 7 Typical Collector-Emitter Saturation Voltage
vs. Collector Current
I /I = 20
CB
T = -55°C
AT = 25°C
A
T = 150°C
A
T = 85°C
A
T = 125°C
A
110 100
I , COLLECTOR CURRENT (mA)
C
Fig. 8 Typical Base-Emitter Turn-On Voltage
vs. Collector Current
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
V , BASE-EMITTER TURN-ON VOLTAGE (V)
BE(ON)
V = 5V
CE
T = 85°C
A
T = 25°C
A
T = -55°C
A
T = 125°C
A
T = 150°C
A
110 100
I , COLLECTOR CURRENT (mA)
C
Fig. 9 Typical Base-Emitter Saturation Voltage
vs. Collector Current
0.4
0.6
0.8
1.0
V , BASE-EMITTER SATURATION VOLTAGE (V)
BE(SAT)
T = 85°C
A
T = 25°C
A
T = -55°C
A
T = 125°C
A
T = 150°C
A
Gain = 10
0.5
0.7
0.9
1.1
0.3
0
0.02
0.04
0.06
0.08
0.10
0.12
0.14
0 1 2 3 4 5
V , COLLECTOR-EMITTER VOLTAGE (V)
CE Fig. 4 Typical Collector Current
vs. Collector-Emitter Voltage
I , COLLECTOR CURRENT (A)
C
I = 0.2mA
B
I = 0.4mA
B
I = 0.6mA
B
I = 0.8mA
B
I = 1.6mA
B
I = 1.2mA
B
I = 2mA
B
110 100
I , COLLECTOR CURRENT (mA)
C
Fig. 5 Typical DC Current Gain vs. Collector Current
0
100
200
300
400
h , DC CURRENT GAIN
FE
T = -55°C
A
T = 25°C
A
T = 150°C
A
T = 125°C
A
T = 85°C
A
V = 1V
CE
50
150
250
350
MMBT3904LP
Document number: DS31835 Rev. 5 - 2
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May 2015
© Diodes Incorporated
MMBT3904LP
Package Outline Dimensions
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version.
L3 L1L2
e
b
D
E
A
z
b2
A1
Seating Plane
Pin #1 ID
Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.
C
Y1
X1
X
G2
Y
G1
X1-DFN1006-3
Dim
Min
Max
Typ
A
0.47
0.53
0.50
A1
0.00
0.05
0.03
b
0.10
0.20
0.15
b2
0.45
0.55
0.50
D
0.95
1.075
1.00
E
0.55
0.675
0.60
e
-
-
0.35
L1
0.20
0.30
0.25
L2
0.20
0.30
0.25
L3
-
-
0.40
z
0.02
0.08
0.05
All Dimensions in mm
Dimensions
Value (in mm)
C
0.70
G1
0.30
G2
0.20
X
0.40
X1
1.10
Y
0.25
Y1
0.70
MMBT3904LP
Document number: DS31835 Rev. 5 - 2
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© Diodes Incorporated
MMBT3904LP
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the
final and determinative format released by Diodes Incorporated.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
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