© Semiconductor Components Industries, LLC, 2017
January, 2018 − Rev. 0 1Publication Order Number:
NVMFS5C426NL/D
NVMFS5C426NL
Power MOSFET
40 V, 1.2 mW, 237 A, Single N−Channel
Features
•Small Footprint (5x6 mm) for Compact Design
•Low RDS(on) to Minimize Conduction Losses
•Low QG and Capacitance to Minimize Driver Losses
•NVMFS5C426NLWF − Wettable Flank Option for Enhanced Optical
Inspection
•AEC−Q101 Qualified and PPAP Capable
•These Devices are Pb−Free and are RoHS Compliant
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter Symbol Value Unit
Drain−to−Source Voltage VDSS 40 V
Gate−to−Source Voltage VGS ±20 V
Continuous Drain
Current RqJC
(Notes 1, 3) Steady
State
TC = 25°CID237 A
TC = 100°C 168
Power Dissipation
RqJC (Note 1) TC = 25°CPD128 W
TC = 100°C 64
Continuous Drain
Current RqJA
(Notes 1, 2, 3) Steady
State
TA = 25°CID41 A
TA = 100°C 29
Power Dissipation
RqJA (Notes 1 & 2) TA = 25°CPD3.8 W
TA = 100°C 1.9
Pulsed Drain Current TA = 25°C, tp = 10 msIDM 1480 A
Operating Junction and Storage Temperature TJ, Tstg −55 to
+ 175 °C
Source Current (Body Diode) IS107 A
Single Pulse Drain−to−Source Avalanche
Energy (IL(pk) = 19 A) EAS 453 mJ
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s) TL260 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be af fected.
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter Symbol Value Unit
Junction−to−Case − Steady State RqJC 1.2 °C/W
Junction−to−Ambient − Steady State (Note 2) RqJA 39.6
1. The e ntire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
2. Surface−mounted on FR4 board using a 650 mm2, 2 oz. Cu pad.
3. Maximum current for pulses as long as 1 second is higher but is dependent
on pulse duration and duty cycle.
MARKING
DIAGRAM
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XXXXXX
AYWZZ
V(BR)DSS RDS(ON) MAX ID MAX
40 V 1.2 mW @ 10 V 237 A
G (4)
S (1,2,3)
N−CHANNEL MOSFET
D (5,6)
S
S
S
G
D
D
D
D
DFN5
(SO−8FL)
CASE 488AA
STYLE 1
1
See detailed ordering, marking and shipping information on
page 5 of this data sheet.
ORDERING INFORMATION
XXXXXX = 5C426L
XXXXXX = (NVMFS5C426NL) or
XXXXXX = 426LWF
XXXXXX = (NVMFS5C426NLWF)
A = Assembly Location
Y = Year
W = Work Week
ZZ = Lot Traceability
1.8 mW @ 4.5 V
NVMFS5C426NL
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2
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter Symbol Test Condition Min Typ Max Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 250 mA40 V
Drain−to−Source Breakdown Voltage
Temperature Coefficient V(BR)DSS/
TJ20 mV/°C
Zero Gate Voltage Drain Current IDSS VGS = 0 V,
VDS = 40 V TJ = 25°C 10 mA
TJ = 125°C 250
Gate−to−Source Leakage Current IGSS VDS = 0 V, VGS = 20 V 100 nA
ON CHARACTERISTICS (Note 4)
Gate Threshold Voltage VGS(TH) VGS = VDS, ID = 250 mA1.2 2.0 V
Threshold Temperature Coefficient VGS(TH)/TJ−5.3 mV/°C
Drain−to−Source On Resistance RDS(on) VGS = 4.5 V ID = 50 A 1.5 1.8 mW
Drain−to−Source On Resistance RDS(on) VGS = 10 V ID = 50 A 1 1.2 mW
Forward Transconductance gFS VDS =10 V, ID = 50 A 190 S
CHARGES, CAPACITANCES & GATE RESISTANCE
Input Capacitance CISS
VGS = 0 V, f = 1 MHz, VDS = 25 V
5600
pF
Output Capacitance COSS 2600
Reverse Transfer Capacitance CRSS 70
Total Gate Charge QG(TOT) VGS = 4.5 V, VDS = 32 V; ID = 50 A 44 nC
Total Gate Charge QG(TOT) VGS = 10 V, VDS = 32 V; ID = 50 A 93
nC
Threshold Gate Charge QG(TH)
VGS = 10 V, VDS = 32 V; ID = 50 A
9.4
Gate−to−Source Charge QGS 17.2
Gate−to−Drain Charge QGD 13.6
Plateau Voltage VGP 3.1 V
SWITCHING CHARACTERISTICS (Note 5)
T urn−On Delay Time td(ON)
VGS = 10 V, VDS = 32 V,
ID = 50 A, RG = 2.5 W
24
ns
Rise Time tr72
T urn−Off Delay Time td(OFF) 122
Fall Time tf116
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage VSD VGS = 0 V,
IS = 50 A TJ = 25°C 0.76 1.2 V
TJ = 125°C 0.66
Reverse Recovery Time tRR
VGS = 0 V, dIS/dt = 100 A/ms,
IS = 50 A
59
ns
Charge Time ta29
Discharge Time tb30
Reverse Recovery Charge QRR 43 nC
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
4. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
5. Switching characteristics are independent of operating junction temperatures.
NVMFS5C426NL
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3
TYPICAL CHARACTERISTICS
3.2 V
3.0 V
2.8 V
Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics
VDS, DRAIN−TO−SOURCE VOLTAGE (V) VGS, GATE−TO−SOURCE VOLTAGE (V)
310
0
20
40
60
100
120
3.02.01.0
0
50
100
150
Figure 3. On−Resistance vs. Gate−to−Source
Voltage Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
VGS, GATE−TO−SOURCE VOLTAGE (V) ID, DRAIN CURRENT (A)
9.58.57.56.55.54.53.5
0
2
4
9
130 17090503010
0
0.5
1.5
2.0
Figure 5. On−Resistance Variation with
Temperature Figure 6. Drain−to−Source Leakage Current
vs. Voltage
TJ, JUNCTION TEMPERATURE (°C) VDS, DRAIN−TO−SOURCE VOLTAGE (V)
15012510075250−25−50
0.7
0.9
1.1
1.3
1.5
1.7
1.9
40353025155
100
10K
ID, DRAIN CURRENT (A)
ID, DRAIN CURRENT (A)
RDS(on), DRAIN−TO−SOURCE RESISTANCE (mW)
RDS(on), DRAIN−TO−SOURCE RESISTANCE (mW)
RDS(on), NORMALIZED DRAIN−TO−
SOURCE RESISTANCE
IDSS, LEAKAGE (A)
3.4 V
VGS = 10 V to 3.6 V
TJ = 125°C
TJ = 25°C
TJ = −55°C
TJ = 25°C
VGS = 10 V
ID = 50 A
50 175
TJ = 125°C
TJ = 85°C
160
180
200
250
2
6
1
3
5
10
8
1K
100K
10 20
TJ = 150°C
4.0
70 150 190
1.0
200 VDS = 10 V
80
140
1.5 2.5 3.5
2.5
7
110
NVMFS5C426NL
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4
TYPICAL CHARACTERISTICS
Figure 7. Capacitance Variation Figure 8. Gate−to−Source Voltage vs. Total
Charge
VDS, DRAIN−TO−SOURCE VOLTAGE (V) QG, TOTAL GATE CHARGE (nC)
403020100
10
100
1K
9070504020100
0
2
4
6
8
10
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance Figure 10. Diode Forward Voltage vs. Current
RG, GATE RESISTANCE (W)VSD, SOURCE−TO−DRAIN VOLTAGE (V)
101
10
100
0.90.8 1.00.70.60.50.40.3
1
Figure 11. Maximum Rated Forward Biased
Safe Operating Area Figure 12. IPEAK vs. Time in Avalanche
VDS, DRAIN−TO−SOURCE VOLTAGE (V) TIME IN AVALANCHE (s)
10001010.1
0.1
10
100
1000
1
10
C, CAPACITANCE (pF)
VGS, GATE−TO−SOURCE VOLTAGE (V)
t, TIME (ns)
IS, SOURCE CURRENT (A)
ID, DRAIN CURRENT (A)
IPEAK (A)
VGS = 0 V
TJ = 25°C
f = 1 MHz
CISS
COSS
CRSS VDS = 32 V
ID = 50 A
TJ = 25°C
QGS QGD
VGS = 10 V
VDS = 32 V td(off)
td(on)
tf
tr
VGS = 0 V
TJ = 25°C TJ = −55°C
TJ(initial) = 100°C
TJ(initial) = 25°C
0.01
RDS(on) Limit
Thermal Limit
Package Limit
10 ms
0.5 ms
1 ms
10 ms
Single Pulse
TC = 25°C
VGS ≤ 10 V
0.001
1000
3525155
10K
30 60
TJ = 125°C
10
100
80 100
0.00010.00001100
1
NVMFS5C426NL
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5
TYPICAL CHARACTERISTICS
0.01
0.1
1
10
100
0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
Figure 13. Thermal Characteristics
PULSE TIME (sec)
R(t) (°C/W)
Single Pulse
50% Duty Cycle
20%
10%
5%
2%
1%
DEVICE ORDERING INFORMATION
Device Marking Package Shipping†
NVMFS5C426NLT1G 5C426L DFN5
(Pb−Free) 1500 / Tape & Reel
NVMFS5C426NLWFT1G 426LWF DFN5
(Pb−Free, Wettable Flanks) 1500 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
NVMFS5C426NL
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6
PACKAGE DIMENSIONS
M3.00 3.40
q0 −−−
_
3.80
12
_
DFN5 5x6, 1.27P
(SO−8FL)
CASE 488AA
ISSUE M NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION D1 AND E1 DO NOT INCLUDE
MOLD FLASH PROTRUSIONS OR GATE
BURRS.
1234
TOP VIEW
SIDE VIEW
BOTTOM VIEW
D1
E1 q
D
E
2
2
B
A
0.20 C
0.20 C
2 X
2 X
DIM MIN NOM
MILLIMETERS
A0.90 1.00
A1 0.00 −−−
b0.33 0.41
c0.23 0.28
D5.15
D1 4.70 4.90
D2 3.80 4.00
E6.15
E1 5.70 5.90
E2 3.45 3.65
e1.27 BSC
G0.51 0.575
K1.20 1.35
L0.51 0.575
L1 0.125 REF
A
0.10 C
0.10 C
DETAIL A
14
L1
e/2
8X
D2
G
E2
K
b
A0.10 B
C
0.05 cL
DETAIL A
A1
c
4 X
C
SEATING
PLANE
MAX
1.10
0.05
0.51
0.33
5.10
4.20
6.10
3.85
0.71
1.50
0.71
STYLE 1:
PIN 1. SOURCE
2. SOURCE
3. SOURCE
4. GATE
5. DRAIN
M
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
SOLDERING FOOTPRINT*
1.270
2X
0.750
1.000
0.905
4.530
1.530
4.560
0.495
3.200
1.330
0.965
2X
2X
4X
4X
PIN 5
(EXPOSED PAD)
5.00 5.30
6.00 6.30
PITCH
DIMENSIONS: MILLIMETERS
1
RECOMMENDED
e
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NVMFS5C426NL/D
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