NVMFS5C426NL Power MOSFET 40 V, 1.2 mW, 237 A, Single N-Channel Features * * * * * * Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses NVMFS5C426NLWF - Wettable Flank Option for Enhanced Optical Inspection AEC-Q101 Qualified and PPAP Capable These Devices are Pb-Free and are RoHS Compliant www.onsemi.com V(BR)DSS RDS(ON) MAX ID MAX 1.2 mW @ 10 V 40 V 237 A 1.8 mW @ 4.5 V MAXIMUM RATINGS (TJ = 25C unless otherwise noted) Parameter Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current RqJC (Notes 1, 3) TC = 25C Power Dissipation RqJC (Note 1) Continuous Drain Current RqJA (Notes 1, 2, 3) Steady State Pulsed Drain Current Value Unit VDSS 40 V VGS 20 V ID 237 A TC = 100C TC = 25C Steady State PD ID Operating Junction and Storage Temperature Source Current (Body Diode) W 128 S (1,2,3) N-CHANNEL MOSFET A 41 29 PD TA = 100C TA = 25C, tp = 10 ms G (4) 64 TA = 100C TA = 25C D (5,6) 168 TC = 100C TA = 25C Power Dissipation RqJA (Notes 1 & 2) Symbol MARKING DIAGRAM W 3.8 D 1.9 1 IDM 1480 A TJ, Tstg -55 to + 175 C IS 107 A Single Pulse Drain-to-Source Avalanche Energy (IL(pk) = 19 A) EAS 453 mJ Lead Temperature for Soldering Purposes (1/8 from case for 10 s) TL 260 C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. DFN5 (SO-8FL) CASE 488AA STYLE 1 S S S G D XXXXXX AYWZZ D D XXXXXX = 5C426L XXXXXX = (NVMFS5C426NL) or XXXXXX = 426LWF XXXXXX = (NVMFS5C426NLWF) A = Assembly Location Y = Year W = Work Week ZZ = Lot Traceability THERMAL RESISTANCE MAXIMUM RATINGS Symbol Value Unit ORDERING INFORMATION Junction-to-Case - Steady State Parameter RqJC 1.2 C/W See detailed ordering, marking and shipping information on page 5 of this data sheet. Junction-to-Ambient - Steady State (Note 2) RqJA 39.6 1. The entire application environment impacts the thermal resistance values shown, they are not constants and are only valid for the particular conditions noted. 2. Surface-mounted on FR4 board using a 650 mm2, 2 oz. Cu pad. 3. Maximum current for pulses as long as 1 second is higher but is dependent on pulse duration and duty cycle. (c) Semiconductor Components Industries, LLC, 2017 January, 2018 - Rev. 0 1 Publication Order Number: NVMFS5C426NL/D NVMFS5C426NL ELECTRICAL CHARACTERISTICS (TJ = 25C unless otherwise specified) Parameter Symbol Test Condition Min Drain-to-Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 250 mA 40 Drain-to-Source Breakdown Voltage Temperature Coefficient V(BR)DSS/ TJ Typ Max Unit OFF CHARACTERISTICS Zero Gate Voltage Drain Current IDSS Gate-to-Source Leakage Current V 20 VGS = 0 V, VDS = 40 V mV/C TJ = 25C 10 TJ = 125C 250 IGSS VDS = 0 V, VGS = 20 V VGS(TH) VGS = VDS, ID = 250 mA 100 mA nA ON CHARACTERISTICS (Note 4) Gate Threshold Voltage Threshold Temperature Coefficient VGS(TH)/TJ 1.2 2.0 -5.3 V mV/C Drain-to-Source On Resistance RDS(on) VGS = 4.5 V ID = 50 A 1.5 1.8 mW Drain-to-Source On Resistance RDS(on) VGS = 10 V ID = 50 A 1 1.2 mW Forward Transconductance gFS VDS =10 V, ID = 50 A 190 S CHARGES, CAPACITANCES & GATE RESISTANCE Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance CRSS 5600 VGS = 0 V, f = 1 MHz, VDS = 25 V 2600 pF 70 Total Gate Charge QG(TOT) VGS = 4.5 V, VDS = 32 V; ID = 50 A 44 Total Gate Charge QG(TOT) VGS = 10 V, VDS = 32 V; ID = 50 A 93 Threshold Gate Charge QG(TH) 9.4 Gate-to-Source Charge QGS 17.2 Gate-to-Drain Charge QGD Plateau Voltage VGP 3.1 td(ON) 24 VGS = 10 V, VDS = 32 V; ID = 50 A nC nC 13.6 V SWITCHING CHARACTERISTICS (Note 5) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time tr td(OFF) VGS = 10 V, VDS = 32 V, ID = 50 A, RG = 2.5 W tf 72 ns 122 116 DRAIN-SOURCE DIODE CHARACTERISTICS Forward Diode Voltage Reverse Recovery Time Charge Time Discharge Time Reverse Recovery Charge VSD VGS = 0 V, IS = 50 A TJ = 25C 0.76 TJ = 125C 0.66 tRR ta tb 1.2 V 59 VGS = 0 V, dIS/dt = 100 A/ms, IS = 50 A QRR 29 ns 30 43 nC Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 4. Pulse Test: pulse width v 300 ms, duty cycle v 2%. 5. Switching characteristics are independent of operating junction temperatures. www.onsemi.com 2 NVMFS5C426NL TYPICAL CHARACTERISTICS 200 VDS = 10 V 3.4 V 160 ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 250 VGS = 10 V to 3.6 V 180 140 3.2 V 120 100 80 3.0 V 60 40 2.8 V 20 0 1 TJ = 25C 50 3 2 TJ = -55C 2.5 2.0 3.5 3.0 VDS, DRAIN-TO-SOURCE VOLTAGE (V) VGS, GATE-TO-SOURCE VOLTAGE (V) Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics 10 TJ = 25C 9 8 7 6 5 4 3 2 1 2.5 1.5 1.0 RDS(on), DRAIN-TO-SOURCE RESISTANCE (mW) RDS(on), DRAIN-TO-SOURCE RESISTANCE (mW) 100 TJ = 125C 3.5 4.5 5.5 6.5 7.5 8.5 9.5 4.0 2.0 1.5 1.0 0.5 0 10 30 50 70 90 110 130 150 170 190 VGS, GATE-TO-SOURCE VOLTAGE (V) ID, DRAIN CURRENT (A) Figure 3. On-Resistance vs. Gate-to-Source Voltage Figure 4. On-Resistance vs. Drain Current and Gate Voltage 100K 1.9 1.7 VGS = 10 V ID = 50 A TJ = 150C IDSS, LEAKAGE (A) RDS(on), NORMALIZED DRAIN-TO- SOURCE RESISTANCE 150 0 0 0 200 1.5 1.3 1.1 10K TJ = 125C 1K TJ = 85C 0.9 0.7 -50 -25 100 0 25 50 75 100 125 150 175 5 10 15 20 25 30 35 TJ, JUNCTION TEMPERATURE (C) VDS, DRAIN-TO-SOURCE VOLTAGE (V) Figure 5. On-Resistance Variation with Temperature Figure 6. Drain-to-Source Leakage Current vs. Voltage www.onsemi.com 3 40 NVMFS5C426NL TYPICAL CHARACTERISTICS VGS, GATE-TO-SOURCE VOLTAGE (V) 10K COSS 1K 100 VGS = 0 V TJ = 25C f = 1 MHz 10 0 5 CRSS 10 15 20 25 30 6 QGS 4 QGD VDS = 32 V ID = 50 A TJ = 25C 2 0 0 10 20 30 40 50 60 70 90 100 80 VDS, DRAIN-TO-SOURCE VOLTAGE (V) QG, TOTAL GATE CHARGE (nC) Figure 7. Capacitance Variation Figure 8. Gate-to-Source Voltage vs. Total Charge td(off) VGS = 10 V VDS = 32 V tf tr t, TIME (ns) 8 40 35 IS, SOURCE CURRENT (A) C, CAPACITANCE (pF) CISS 10 100 td(on) VGS = 0 V 10 TJ = 125C TJ = 25C 1 10 1 0.3 10 0.4 0.5 0.6 0.7 TJ = -55C 0.8 0.9 1.0 RG, GATE RESISTANCE (W) VSD, SOURCE-TO-DRAIN VOLTAGE (V) Figure 9. Resistive Switching Time Variation vs. Gate Resistance Figure 10. Diode Forward Voltage vs. Current 1000 1000 100 TJ(initial) = 25C 100 10 Single Pulse TC = 25C VGS 10 V 1 IPEAK (A) ID, DRAIN CURRENT (A) 10 ms 0.5 ms 1 ms 10 ms TJ(initial) = 100C 10 RDS(on) Limit Thermal Limit Package Limit 0.1 1 0.1 1 10 100 1000 0.00001 0.0001 0.001 VDS, DRAIN-TO-SOURCE VOLTAGE (V) TIME IN AVALANCHE (s) Figure 11. Maximum Rated Forward Biased Safe Operating Area Figure 12. IPEAK vs. Time in Avalanche www.onsemi.com 4 0.01 NVMFS5C426NL TYPICAL CHARACTERISTICS 100 R(t) (C/W) 50% Duty Cycle 10 20% 10% 5% 1 2% 1% 0.1 Single Pulse 0.01 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 PULSE TIME (sec) Figure 13. Thermal Characteristics DEVICE ORDERING INFORMATION Device Marking Package Shipping NVMFS5C426NLT1G 5C426L DFN5 (Pb-Free) 1500 / Tape & Reel NVMFS5C426NLWFT1G 426LWF DFN5 (Pb-Free, Wettable Flanks) 1500 / Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. www.onsemi.com 5 NVMFS5C426NL PACKAGE DIMENSIONS DFN5 5x6, 1.27P (SO-8FL) CASE 488AA ISSUE M 2X 0.20 C D NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION D1 AND E1 DO NOT INCLUDE MOLD FLASH PROTRUSIONS OR GATE BURRS. A 2 B D1 2X 0.20 C 4X E1 q E 2 c 1 2 3 DIM A A1 b c D D1 D2 E E1 E2 e G K L L1 M q A1 4 TOP VIEW C DETAIL A 0.10 C SEATING PLANE A 0.10 C SIDE VIEW RECOMMENDED SOLDERING FOOTPRINT* DETAIL A 2X 0.10 b C A B 0.05 c 0.495 8X 4.560 MILLIMETERS MIN NOM MAX 0.90 1.00 1.10 0.00 --- 0.05 0.33 0.41 0.51 0.23 0.28 0.33 5.00 5.30 5.15 4.70 4.90 5.10 3.80 4.00 4.20 6.00 6.30 6.15 5.70 5.90 6.10 3.45 3.65 3.85 1.27 BSC 0.51 0.575 0.71 1.20 1.35 1.50 0.51 0.575 0.71 0.125 REF 3.00 3.40 3.80 0_ --- 12 _ STYLE 1: PIN 1. SOURCE 2. SOURCE 3. SOURCE 4. GATE 5. DRAIN 2X 1.530 e/2 e L 1 4 3.200 K 4.530 E2 PIN 5 (EXPOSED PAD) L1 M 1.330 2X 0.905 1 G 0.965 D2 4X 1.000 4X 0.750 BOTTOM VIEW 1.270 PITCH DIMENSIONS: MILLIMETERS *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 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