2SC2859
2003-03-27
1
TOSHIBA Transist or Silicon NPN E pitax ial (PCT p r oc ess )
2SC2859
Audio Frequency Low Power Amplifier Applications
Driver Stage Amplifier Applications
Switching App lications
· Excellent hFE linearity : hFE (2) = 25 (min) (VCE = 6 V, IC = 400 mA)
· Complementary to 2SA1182.
Maximum Ratings (Ta =
==
= 25°C)
Characteristics Symbol Rating Unit
Collect or-base voltage VCBO 35 V
Collect or-emitter voltage VCEO 30 V
Emitter-base voltage VEBO 5 V
Collector current IC 500 mA
Base current IB 50 mA
Collect or power diss i pation PC 150 mW
Junction temperature Tj 125 °C
Storage temperature range Tstg -55~125 °C
Electrical Characteristics (Ta =
==
= 25°C)
Characteristics Symbol Test Condition Min Typ. Max Unit
Collector cut-off current ICBO V
CB = 35 V, IE = 0 ¾ ¾ 0.1 mA
Emitte r cut-o ff current IEBO V
EB = 5 V, IC = 0 ¾ ¾ 0.1 mA
hFE (1) V
CE = 1 V, IC = 100 mA 70 ¾ 400
DC current gain (Note) hFE (2) V
CE = 6 V, IC = 400 mA 25 ¾ ¾
Collect or-em it t e r saturati on vol tage VCE (sat) I
C = 100 mA, IB = 10 mA ¾ 0.1 0.25 V
Base-emit ter voltage VBE V
CE = 1 V, IC = 100 mA ¾ 0.8 1.0 V
Transiti on frequenc y fT V
CE = 6 V, IC = 20 mA ¾ 300 ¾ MHz
Collect or output capaci t ance Cob V
CB = 6 V, IE = 0, f = 1 MHz ¾ 7 ¾ pF
Note: hFE (1) classification O (O): 70~140, Y (Y): 120~240, GR (G): 200~400
h
FE (2) classification O: 25 min, Y: 40 min, GR: 70 min
( ) marking symbol
Marking
Unit: mm
JEDEC TO-236MOD
JEITA SC-59
TOSHIBA 2-3F1A
Weight: 0.012 g (typ.)
2SC2859
2003-03-27
2
2SC2859
2003-03-27
3
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000707EA
A
RESTRICTIONS O N PRODUCT USE
