1. FEATURES
●We declare that the material of product compliance with
RoHS requirements and Halogen Free.
●S- prefix for automotive and other applications requiring
unique site and control change requirements; AEC-Q101
qualified and PPAP capable.
●ESD Protected:1000V
2. DEVICE MARKING AND ORDERING INFORMATION
3. MAXIMUM RATINGS(Ta = 25ºC)
– Continuous TC = 25°C
TC = 100°C
– Pulsed (Note 1)
Gate–Source Voltage
– Continuous
4. THERMAL CHARACTERISTICS
Total Device Dissipation,
FR−5 Board (Note 2) @ TA = 25ºC
Derate above 25ºC
Thermal Resistance,
Junction–to–Ambient(Note 2)
Junction and Storage temperature
1. Pulse Test: Pulse Width ≤ 300 μs, Duty Cycle ≤ 2.0%.
2. FR–5 = 1.0×0.75×0.062 in.
Vdc
Vdc
mAdc
Parameter Symbol Limits
60
– Non–repetitive (tp≤50μs) VGSM ±40 Vdc
Vdc
Unit
225
Drain–Source Voltage VDSS
Marking Shipping
L2N7002LT1G 702 3000/Tape&Reel
Drain Current ID
L2N7002LT1G
S-L2N7002LT1G
Small Signal MOSFET
115 mAmps, 60 Volts N–Channel SOT-23
±115
±75
IDM ±800
VGS ±20
L2N7002LT3G 702 10000/Tape&Reel
Parameter Symbol Limits
Device
Drain–Gate Voltage (RGS = 1.0 MΩ) VDGR 60
Unit
ºC/W
ºC−55∼+150TJ,Tstg
mW
mW/ºC
PD
RΘJA
1.8
556
SOT23(TO-236)
Leshan Radio Company, LTD. Rev.C Mar 2018 1/6
L2N7002LT1G, S-L2N7002LT1G
Small Signal MOSFET
5. ELECTRICAL CHARACTERISTICS (Ta= 25ºC )
OFF CHARACTERISTICS
Characteristic
Drain–Source Breakdown Voltage
(VGS = 0, ID = 10μAdc)
Zero Gate Voltage Drain Current
TJ = 25°C
(VGS = 0, VDS = 60 Vdc)
TJ = 125°C
Gate–Body Leakage Current, Forward
(VGS = 20 Vdc)
Gate–Body Leakage Current, Reverse
(VGS = - 20 Vdc)
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage
(VDS = VGS, ID = 250μAdc)
On–State Drain Current
(VDS ≥ 2.0 VDS(on), VGS = 10 Vdc)
Static Drain–Source On–State Voltage
(VGS = 10 Vdc, ID = 500 mAdc)
(VGS = 5.0 Vdc, ID = 50 mAdc)
Static Drain–Source On–State Resistance
(VGS = 10 Vdc, ID = 500 mAdc)
TC = 25°C
TC = 125°C
(VGS = 5.0 Vdc, ID = 50 mAdc)
TC = 25°C
TC = 125°C
Forward Transconductance
(VDS≥ 2.0 VDS(on), ID = 200 mAdc)
DYNAMIC CHARACTERISTICS
Input Capacitance
(VDS = 25 V, VGS = 0, f = 1.0 MHz)
Output Capacitance
(VDS = 25 V, VGS = 0, f = 1.0 MHz)
Reverse Transfer Capacitance
(VDS = 25 V, VGS = 0, f = 1.0 MHz)
SWITCHING CHARACTERISTICS
BODY–DRAIN DIODE RATINGS
Diode Forward On–Voltage
(IS = 115 mAdc, VGS = 0 V)
Source Current Continuous (Body Diode)
Source Current Pulsed
3.Pulse Test: Pulse Width ≤300 μs, Duty Cycle ≤2.0%.
Turn-On Delay Time
Turn-Off Delay Time
td(off)
td(on)
VSD Vdc
- - -1.5
ns
-11 40
- 7 20
(VDD = 25 Vdc , ID =500
mAdc, RG = 25Ω,RL = 50
Ω,Vgen = 10 V)
RDS(on)
-
-
1.0
ID(on) 500
VDS(on) -
-
-
VGS(th)
IDSS
-
-3.75
0.375 Ohms
- -
Vdc
Unit
1.4 7.5
- - 13.5
2.0
- -
-13.5
1.8 7.5
1.6
- -
Symbol Min.
μAdc
μAdc
1.0
Vdc
mA
500
IGSSF - - 1.0
Typ. Max.
IGSSR - - -1.0
VBRDSS Vdc
60 - -
μAdc
gfs mmhos
80 - -
IS mAdc- -
pF
pF
Ciss -17 50
Coss
Crss
-10 25
-2.5 5.0
pF
- - -800
-115
ISM mAdc
Leshan Radio Company, LTD. 2/6Rev.C Mar 2018
L2N7002LT1G, S-L2N7002LT1G
Small Signal MOSFET
6.ELECTRICAL CHARACTERISTICS CURVES
0
1
2
3
4
5
6
7
8
0 0.05 0.1 0.15 0.2
RDS(on), ON-Resistance(Ω)
ID, Drain Current(A)
VGS=5V
150℃
25℃
-55℃
85℃
0
1
2
3
4
5
6
7
8
0 0.05 0.1 0.15 0.2
RDS(on), ON-Resistance(Ω)
ID, Drain Current(A)
VGS=10V
150℃
25℃
-55℃
85℃
0
0.2
0.4
0.6
0.8
1
1.2
0 2 4 6 8 10
ID, Drain Current(A)
VGS, Gate-to-Source Voltage(V)
150℃
25℃
-55℃
0
0.4
0.8
1.2
1.6
0 1 2 3 4 5 6
ID,Drain Current(A)
VDS, Drain-to-Source Voltage(V)
VGS=3V
VGS=2.5V
VGS=4V
VGS=3.5V
VGS=4.5V
VGS=5V
VGS=6V
VGS=7,8,9,10V
Transfer Characteristcs
ON-Region Characteristics
RDS(on) vs. ID RDS(on) vs. ID
Leshan Radio Company, LTD. 3/6
Rev.C Mar 2018
L2N7002LT1G, S-L2N7002LT1G
Small Signal MOSFET
6.ELECTRICAL CHARACTERISTICS CURVES（Con.)
0
0.5
1
1.5
2
2.5
-50 0 50 100 150
RDS(on), ON_Region reisistance(normallized)
Temperataure(℃)
VGS=10V
VGS=5V
0
1
2
3
4
5
6
7
8
9
10
246810
RDS(on), ON-Resistance(Ω）
VGS, Gate-to-Source Voltage(V)
ID=500mA
ID=200mA
0
5
10
15
20
25
30
35
0 5 10 15 20 25 30
C,Capacitor(Pf)
VDS, Drain-to-Source Voltage(V)
VGS=0V
Ciss
Coss
Crss
0.01
0.1
1
10
0.4 0.5 0.6 0.7 0.8 0.9 1
IS, Source Current(A)
VSD, Source-to-Drain Voltage(V)
VGS=0V
85℃
25℃
RDS(on) vs. VGS RDS(on) vs. Temperature
Capacitor vs.VDS IS vs.VSD
Leshan Radio Company, LTD. 4/6
Rev.C Mar 2018
L2N7002LT1G, S-L2N7002LT1G
Small Signal MOSFET
6.ELECTRICAL CHARACTERISTICS CURVES（Con.)
0
0.2
0.4
0.6
0.8
1
1.2
1.4
-50 0 50 100 150
VGS(th), Threshold Voltage(normallized)
Temperature(℃）
ID=250uA
1.0E-10
1.0E-09
1.0E-08
1.0E-07
1.0E-06
010 20 30 40 50 60
IDS,Idss Leakage(A)
VDS, Drain-to-Source Voltage(V)
VGS=0
150℃
125℃
25℃
85℃
VGS(th) vs. Temperature IDS vs. VDS
Leshan Radio Company, LTD. 5/6
Rev.C Mar 2018
L2N7002LT1G, S-L2N7002LT1G
Small Signal MOSFET
7.OUTLINE AND DIMENSIONS Notes:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM
THICKNESS OF BASE MATERIAL.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD
FLASH, PROTRUSIONS OR GATE BURRS.
8.SOLDERING FOOTPRINT
θ0° --- 10° 0° --- 10°
1.78 1.9 2.04 0.07 0.075 0.081
HE2.10 2.4 2.64 0.083 0.094 0.104
e
L
L1 0.10 0.2 0.3 0.004 0.008 0.012
0.35 0.54
0.09 0.13 0.18 0.003 0.005 0.007
0.114 0.122.9 3.04 0.11
0.018 0.02
0.69 0.014 0.021 0.029
b
A1 0.37
E
MIN NOM MAX MIN NOM
0.01 0.06 0.1 0.001 0.002
D
DIM MILLIMETERS INCHES
0.89 1
c2.80
MAX
A
1.20
1.11 0.035 0.04 0.044
1.3 1.4 0.047 0.051 0.055
0.004
0.44 0.5 0.015
Leshan Radio Company, LTD. 6/6Rev.C Mar 2018
