PackageFootprintComparison(toScale)
PackageHeight (toScale)Comparison
D(SO-8) DBV(SOT23-5) DRL(SOT553)
OPA170
OPA2170
OPA4170
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SBOS557A AUGUST 2011REVISED SEPTEMBER 2011
36V, Single-Supply, SOT553, Low-Power
OPERATIONAL AMPLIFIERS
Check for Samples: OPA170,OPA2170,OPA4170
1FEATURES DESCRIPTION
The OPA170, OPA2170 and OPA4170 (OPAx170)
2Supply Range: +2.7V to +36V, ±1.35V to ±18V are a family of 36V, single-supply, low-noise
Low Noise: 19nV/Hz operational amplifiers that feature micro packages
RFI Filtered Inputs with the ability to operate on supplies ranging from
+2.7V (±1.35V) to +36V (±18V). They offer good
Input Range Includes the Negative Supply offset, drift, and bandwidth with low quiescent current.
Input Range Operates to Positive Supply The single, dual, and quad versions all have identical
Rail-to-Rail Output specifications for maximum design flexibility.
Gain Bandwidth: 1.2MHz Unlike most op amps, which are specified at only one
Low Quiescent Current: 110µA per Amplifier supply voltage, the OPAx170 family of op amps is
specified from +2.7V to +36V. Input signals beyond
High Common-Mode Rejection: 120dB the supply rails do not cause phase reversal. The
Low Bias Current: 15pA (max) OPAx170 family is stable with capacitive loads up to
Industry-Standard Packages: 300pF. The input can operate 100mV below the
negative rail and within 2V of the positive rail for
8-Pin SOIC normal operation. Note that these devices can
8-Pin MSOP operate with full rail-to-rail input 100mV beyond the
14-Pin TSSOP positive rail, but with reduced performance within 2V
of the positive rail.
microPackages:
Single in 5-Pin SOT553 The OPA170 is available in SOT553, SOT23-5, and
SO-8 packages. The dual OPA2170 comes in
Dual in 8-Pin VSSOP VSSOP-8, MSOP-8, and SO-8 packages. The quad
OPA4170 is offered in TSSOP-14 and SO-14
APPLICATIONS packages. The OPAx170 op amps are specified
Tracking Amplifier in Power Modules from 40°C to +125°C.
Merchant Power Supplies
Transducer Amplifiers
Bridge Amplifiers
Temperature Measurements
Strain Gauge Amplifiers
Precision Integrators
Battery-Powered Instruments
Test Equipment
Product Family
DEVICE PACKAGE
OPA170 (single) SOT553, SOT23-5, SO-8
OPA2170 (dual) VSSOP-8, MSOP-8, SO-8
OPA4170 (quad) TSSOP-14, SO-14
.
Smallest Packaging for 36V Op Amps
1Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas
Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
2All trademarks are the property of their respective owners.
PRODUCTION DATA information is current as of publication date. Copyright ©2011, Texas Instruments Incorporated
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
OPA170
OPA2170
OPA4170
SBOS557A AUGUST 2011REVISED SEPTEMBER 2011
www.ti.com
This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with
appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.
ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more
susceptible to damage because very small parametric changes could cause the device not to meet its published specifications.
PACKAGE/ORDERING INFORMATION(1)
PACKAGE PACKAGE TRANSPORT MEDIA,
PRODUCT PACKAGE-LEAD DESIGNATOR MARKING ORDERING NUMBER QUANTITY
OPA170AIDRLT Tape and Reel, 250
SOT553-5 DRL DAQ OPA170AIDRLR Tape and Reel, 4000
OPA170AIDBVT Tape and Reel, 250
OPA170 SOT23-5 DBV OSVI OPA170AIDBVR Tape and Reel, 3000
OPA170AID Rail, 75
SO-8 D O170A OPA170AIDR Tape and Reel, 2500
OPA2170AIDGK Rail, 80
MSOP-8 DGK OPNI OPA2170AIDGKR Tape and Reel, 2500
OPA2170AIDCUT Tape and Reel, 250
OPA2170 VSSOP-8 DCU OPQC OPA2170AIDCUR Tape and Reel, 3000
OPA2170AID Rail, 75
SO-8 D 2170A OPA2170AIDR Tape and Reel, 2500
OPA4170AID Rail, 50
SO-14 D OPA4170 OPA4170AIDR Tape and Reel, 2500
OPA4170 OPA4170AIPW Rail, 90
TSSOP-14 PW OPA4170 OPA4170AIPWR Tape and Reel, 2000
(1) For the most current package and ordering information, see the Package Option Addendum at the end of this document, or visit the
device product folder at www.ti.com.
ABSOLUTE MAXIMUM RATINGS(1)
Over operating free-air temperature range, unless otherwise noted. OPA170, OPA2170, OPA4170 UNIT
Supply voltage ±20, +40 (single supply) V
Voltage (V)0.5 to (V+) + 0.5 V
Signal input terminals Current ±10 mA
Output short circuit(2) Continuous
Operating temperature 55 to +150 °C
Storage temperature 65 to +150 °C
Junction temperature +150 °C
Human body model (HBM) 4 kV
ESD ratings Charged device model (CDM) 750 V
(1) Stresses above these ratings may cause permanent damage. Exposure to absolute maximum conditions for extended periods may
degrade device reliability. These are stress ratings only, and functional operation of the device at these or any other conditions beyond
those specified is not implied.
(2) Short-circuit to ground, one amplifier per package.
2Submit Documentation Feedback Copyright ©2011, Texas Instruments Incorporated
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OPA170
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OPA4170
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SBOS557A AUGUST 2011REVISED SEPTEMBER 2011
ELECTRICAL CHARACTERISTICS
Boldface limits apply over the specified temperature range, TA=40°C to +125°C.
At TA= +25°C, VCM = VOUT = VS/2, and RL= 10kΩconnected to VS/2, unless otherwise noted.
OPA170, OPA2170, OPA4170
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
OFFSET VOLTAGE
Input offset voltage VOS 0.25 ±1.8 mV
Over temperature ±2 mV
Drift dVOS/dT ±0.3 ±2µV/°C
vs power supply PSRR VS= +4V to +36V 1 ±5µV/V
Channel separation, dc dc 5 µV/V
INPUT BIAS CURRENT
Input bias current IB±8±15 pA
Over temperature ±3.5 nA
Input offset current IOS ±4±15 pA
Over temperature ±3.5 nA
NOISE
Input voltage noise f = 0.1Hz to 10Hz 2 µVPP
f = 100Hz 22 nV/Hz
Input voltage noise density enf = 1kHz 19 nV/Hz
INPUT VOLTAGE
Common-mode voltage range(1) VCM (V)0.1V (V+) 2V V
VS=±2V, (V)0.1V <VCM <(V+) 2V 90 104 dB
Common-mode rejection ratio CMRR VS=±18V, (V)0.1V <VCM <(V+) 2V 104 120 dB
INPUT IMPEDANCE
Differential 100 || 3 MΩ|| pF
Common-mode 6 || 3 1012 Ω|| pF
OPEN-LOOP GAIN
VS= +4V to +36V, (V) + 0.35V <VO<(V+)
Open-loop voltage gain AOL 110 130 dB
0.35V
FREQUENCY RESPONSE
Gain bandwidth product GBP 1.2 MHz
Slew rate SR G = +1 0.4 V/µs
To 0.1%, VS=±18V, G = +1, 10V step 20 µs
Settling time tSTo 0.01% (12 bit), VS=±18V, G = +1, 10V step 28 µs
Overload recovery time VIN ×Gain >VS2µs
Total harmonic distortion + noise THD+N G = +1, f = 1kHz, VO= 3VRMS 0.0002 %
OUTPUT
Voltage output swing from rail VO
IL= 0mA, VS= +4V to +36V 10 mV
Positive rail ILsourcing 1mA, VS= +4V to +36V 115 mV
IL= 0mA, VS= +4V to +36V 8 mV
Negative Rail ILsinking 1mA, VS= +4V to +36V 70 mV
VS= 5V, RL= 10kΩ(V) + 0.03 (V+) 0.05 V
Over temperature RL= 10kΩ, AOL 110dB (V) + 0.35 (V+) 0.35 V
Short-circuit current ISC +17/20 mA
Capacitive load drive CLOAD See Typical Characteristics pF
Open-loop output resistance ROf = 1MHz, IO= 0A 900 Ω
POWER SUPPLY
Specified voltage range VS+2.7 +36 V
Quiescent current per amplifier IQIO= 0A 110 145 µA
Over temperature IO= 0A 155 µA
(1) The input range can be extended beyond (V+) 2V up to V+. See the Typical Characteristics and Application Information sections for
additional information.
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OPA170
OPA2170
OPA4170
SBOS557A AUGUST 2011REVISED SEPTEMBER 2011
www.ti.com
ELECTRICAL CHARACTERISTICS (continued)
Boldface limits apply over the specified temperature range, TA=40°C to +125°C.
At TA= +25°C, VCM = VOUT = VS/2, and RL= 10kΩconnected to VS/2, unless otherwise noted.
OPA170, OPA2170, OPA4170
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
TEMPERATURE
Specified range 40 +125 °C
Operating range 55 +150 °C
THERMAL INFORMATION: OPA170 OPA170
THERMAL METRIC(1) D (SO) DBV (SOT23) DRL (SOT553) UNITS
8 PINS 5 PINS 5 PINS
θJA Junction-to-ambient thermal resistance 149.5 245.8 208.1
θJC(top) Junction-to-case(top) thermal resistance 97.9 133.9 0.1
θJB Junction-to-board thermal resistance 87.7 83.6 42.4 °C/W
ψJT Junction-to-top characterization parameter 35.5 18.2 0.5
ψJB Junction-to-board characterization parameter 89.5 83.1 42.2
θJC(bottom) Junction-to-case(bottom) thermal resistance N/A N/A N/A
(1) For more information about traditional and new thermal metrics, see the IC Package Thermal Metrics application report, SPRA953.
THERMAL INFORMATION: OPA2170 OPA2170
THERMAL METRIC(1) D (SO) DCU (VSSOP) DGK (MSOP) UNITS
8 PINS 8 PINS 8 PINS
θJA Junction-to-ambient thermal resistance 134.3 175.2 180
θJC(top) Junction-to-case(top) thermal resistance 72.1 74.9 55
θJB Junction-to-board thermal resistance 60.6 22.2 130 °C/W
ψJT Junction-to-top characterization parameter 18.2 1.6 5.3
ψJB Junction-to-board characterization parameter 53.8 22.8 120
θJC(bottom) Junction-to-case(bottom) thermal resistance N/A N/A N/A
(1) For more information about traditional and new thermal metrics, see the IC Package Thermal Metrics application report, SPRA953.
THERMAL INFORMATION: OPA4170 OPA4170
THERMAL METRIC(1) D (SO) PW (TSSOP) UNITS
14 PINS 14 PINS
θJA Junction-to-ambient thermal resistance 93.2 106.9
θJC(top) Junction-to-case(top) thermal resistance 51.8 24.4
θJB Junction-to-board thermal resistance 49.4 59.3 °C/W
ψJT Junction-to-top characterization parameter 13.5 0.6
ψJB Junction-to-board characterization parameter 42.2 54.3
θJC(bottom) Junction-to-case(bottom) thermal resistance N/A N/A
(1) For more information about traditional and new thermal metrics, see the IC Package Thermal Metrics application report, SPRA953.
4Submit Documentation Feedback Copyright ©2011, Texas Instruments Incorporated
Product Folder Link(s): OPA170 OPA2170 OPA4170
1
2
3
5
4
V+
OUT
IN+
V-
IN-
1
2
3
4
8
7
6
5
V+
OUTB
-INB
+INB
OUTA
-INA
+INA
V-
1
2
3
5
4
V+
-IN
OUT
V-
+IN
1
2
3
4
14
13
12
11
OUTD
-IND
+IND
V-
OUTA
-INA
+INA
V+
5
6
7
10
9
8
+INC
-INC
OUTC
+INB
-INB
OUTB
1
2
3
4
8
7
6
5
NC(1)
V+
OUT
NC(1)
NC(1)
-IN
+IN
V-
OPA170
OPA2170
OPA4170
www.ti.com
SBOS557A AUGUST 2011REVISED SEPTEMBER 2011
PIN CONFIGURATIONS
DRL PACKAGE: OPA170 D, DGK, AND DCU PACKAGES: OPA2170
SOT-553 MSOP-8, SO-8, AND VSSOP-8
(TOP VIEW) (TOP VIEW)
DBV PACKAGE: OPA170
SOT23-5
(TOP VIEW) D AND PW PACKAGES: OPA4170
SO-14 AND TSSOP-14
(TOP VIEW)
D PACKAGE: OPA170
SO-8
(TOP VIEW)
(1) No internal connection.
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Product Folder Link(s): OPA170 OPA2170 OPA4170
OPA170
OPA2170
OPA4170
SBOS557A AUGUST 2011REVISED SEPTEMBER 2011
www.ti.com
TYPICAL CHARACTERISTICS
TABLE OF GRAPHS
Table 1. Characteristic Performance Measurements
DESCRIPTION FIGURE
Offset Voltage Production Distribution Figure 1
Offset Voltage Drift Distribution Figure 2
Offset Voltage vs Temperature Figure 3
Offset Voltage vs Common-Mode Voltage Figure 4
Offset Voltage vs Common-Mode Voltage (Upper Stage) Figure 5
Offset Voltage vs Power Supply Figure 6
IBand IOS vs Common-Mode Voltage Figure 7
Input Bias Current vs Temperature Figure 8
Output Voltage Swing vs Output Current (Maximum Supply) Figure 9
CMRR and PSRR vs Frequency (Referred-to Input) Figure 10
CMRR vs Temperature Figure 11
PSRR vs Temperature Figure 12
0.1Hz to 10Hz Noise Figure 13
Input Voltage Noise Spectral Density vs Frequency Figure 14
THD+N Ratio vs Frequency Figure 15
THD+N vs Output Amplitude Figure 16
Quiescent Current vs Temperature Figure 17
Quiescent Current vs Supply Voltage Figure 18
Open-Loop Gain and Phase vs Frequency Figure 19
Closed-Loop Gain vs Frequency Figure 20
Open-Loop Gain vs Temperature Figure 21
Open-Loop Output Impedance vs Frequency Figure 22
Small-Signal Overshoot vs Capacitive Load (100mV Output Step) Figure 23,Figure 24
No Phase Reversal Figure 25
Positive Overload Recovery Figure 26
Negative Overload Recovery Figure 27
Small-Signal Step Response (100mV) Figure 28,Figure 29
Large-Signal Step Response Figure 30,Figure 31
Large-Signal Settling Time (10V Positive Step) Figure 32
Large-Signal Settling Time (10V Negative Step) Figure 33
Short-Circuit Current vs Temperature Figure 34
Maximum Output Voltage vs Frequency Figure 35
EMIRR IN+ vs Frequency Figure 36
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Product Folder Link(s): OPA170 OPA2170 OPA4170
−1200
−1100
−1000
−900
−800
−700
−600
−500
−400
−300
−200
−100
0
100
200
300
400
500
600
700
800
900
1000
1100
1200
−1200
−1100
−1000
−900
−800
−700
−600
−500
−400
−300
−200
−100
0
100
200
300
400
500
600
700
800
900
1000
1100
1200
0
2
4
6
8
10
12
14
16
18
20
Offset Voltage (µV)
Percentage of Amplifiers (%)
Distribution Taken From 400 Amplifiers
G001
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1
1.1
1.2
1.3
1.4
1.5
1.6
1.7
1.8
1.9
2
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1
1.1
1.2
1.3
1.4
1.5
1.6
1.7
1.8
1.9
2
0
5
10
15
20
25
Offset Voltage Drift (µV/°C)
Percentage of Amplifiers (%)
Distribution Taken From 104 Amplifiers
G002
−1000
−800
−600
−400
−200
0
200
400
600
800
1000
−50 −25 0 25 50 75 100 125 150
Temperature (°C)
Offset Voltage (µV)
5 Typical Units Shown
G003
V = 18.1V
CM -
Offset Voltage ( V)m
Common-Mode Voltage (V)
−500
−300
−100
100
300
500
0 2 4 6 8 10 12 14 16 18 20
VSUPPLY (V)
Offset Voltage (µV)
VSUPPLY = ±1.35V to ± 18V
5 Typical Units Shown
G006
OPA170
OPA2170
OPA4170
www.ti.com
SBOS557A AUGUST 2011REVISED SEPTEMBER 2011
TYPICAL CHARACTERISTICS
VS=±18V, VCM = VS/2, RLOAD = 10kΩconnected to VS/2, and CL= 100pF, unless otherwise noted.
OFFSET VOLTAGE PRODUCTION DISTRIBUTION OFFSET VOLTAGE DRIFT DISTRIBUTION
Figure 1. Figure 2.
OFFSET VOLTAGE vs TEMPERATURE OFFSET VOLTAGE vs COMMON-MODE VOLTAGE
Figure 3. Figure 4.
OFFSET VOLTAGE vs COMMON-MODE VOLTAGE
(Upper Stage) OFFSET VOLTAGE vs POWER SUPPLY
Figure 5. Figure 6.
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-20 20
V (V)
CM
12
10
8
6
4
2
0
I and I (pA)
B OS
-15 -10 -5 0 5 10 15
IOS
+IB
-IB
V = 18.1V-
CM V = 16.1V
CM
IB+
IB-
IOS
2000
1500
1000
500
0
500
1000
-
-
InputBiasCurrent(pA)
-75 -50 -25 0 25 150
Temperature( C)°
50 12510075
18
OutputVoltage(V)
0 1 2 3 4 10
OutputCurrent(mA)
5 6 7
17
16
15
14.5
-14.5
-15
-16
-17
-18
8 9
- °40 C
+25 C°
+125 C°
140
120
100
80
60
40
20
0
Common-Mode Rejection Ratio (dB),
Power-Supply Rejection Ratio (dB)
1 10 100 1k 10k 1M
Frequency (Hz)
100k
+PSRR
-PSRR
CMRR
−3
−2
−1
0
1
2
3
−75 −50 −25 0 25 50 75 100 125 150
Temperature (°C)
Power−Supply Rejection Ratio (µV/V)
VS = 2.7V to 36V
VS = 4V to 36V
G012
30
25
20
15
10
5
0
Common-ModeRejectionRatio( V/V)m
-75 -50 -25 0 25 150
Temperature( C)°
50 12510075
V = 1.35V±
S
V = 2V
S±
V = 18V
S±
OPA170
OPA2170
OPA4170
SBOS557A AUGUST 2011REVISED SEPTEMBER 2011
www.ti.com
TYPICAL CHARACTERISTICS (continued)
VS=±18V, VCM = VS/2, RLOAD = 10kΩconnected to VS/2, and CL= 100pF, unless otherwise noted.
IBAND IOS vs COMMON-MODE VOLTAGE INPUT BIAS CURRENT vs TEMPERATURE
Figure 7. Figure 8.
OUTPUT VOLTAGE SWING vs OUTPUT CURRENT CMRR AND PSRR vs FREQUENCY
(Maximum Supply) (Referred-to Input)
Figure 9. Figure 10.
CMRR vs TEMPERATURE PSRR vs TEMPERATURE
Figure 11. Figure 12.
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1 V/divm
1
10
100
1000
1 10 100 1k 10k 100k 1M
Frequency (Hz)
Voltage Noise Density (nV/ Hz)
G014
0.1
0.01
0.001
0.0001
0.00001
TotalHarmonicDistortion+Noise(%)
0.01 0.1 1 10 20
OutputAmplitude(V )
RMS
-60
TotalHarmonicDistortion+Noise(dB)
BW=80kHz
G=+1
R =10k
LW
-80
-100
-140
-120
0.01
0.001
0.0001
0.00001
TotalHarmonicDistortion+Noise(%)
10 100 1k 10k 100k
Frequency(Hz)
TotalHarmonicDistortion+Noise(dB)
V =3V
BW=80kHz
OUT RMS
G=+1
R =10k
LW
-80
-100
-120
-140
60
70
80
90
100
110
120
130
140
−50 −25 0 25 50 75 100 125 150
VS = ±18V
VS = ±1.35V
Temperature (°C)
IQ (mA)
G017
OPA170
OPA2170
OPA4170
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SBOS557A AUGUST 2011REVISED SEPTEMBER 2011
TYPICAL CHARACTERISTICS (continued)
VS=±18V, VCM = VS/2, RLOAD = 10kΩconnected to VS/2, and CL= 100pF, unless otherwise noted.
INPUT VOLTAGE NOISE SPECTRAL DENSITY vs
0.1Hz TO 10Hz NOISE FREQUENCY
Figure 13. Figure 14.
THD+N RATIO vs FREQUENCY THD+N vs OUTPUT AMPLITUDE
Figure 15. Figure 16.
QUIESCENT CURRENT vs TEMPERATURE QUIESCENT CURRENT vs SUPPLY VOLTAGE
Figure 17. Figure 18.
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−20
−10
0
10
20
30
40
50
1k 10k 100k 1M 10M 100M
Frequency (Hz)
Gain (dB)
G = −1
G = 1
G = 10
G020
140
120
100
80
60
40
20
0
20
40
-
-
Gain(dB)
0.1 10 100 1k 10k 10M
Frequency(Hz)
1M100k
Phase
Gain
Phase( )°
1
135
90
45
0
45
90
135
180
225
270
-
-
-
-
-
-
3
2.5
2
1.5
1
0.5
0
A ( V/V)m
OL
-75 -50 -25 0 25 150
Temperature( C)°
50 12510075
V =2.7V
S
V =4V
S
V =36V
S
10k
1k
100
10
1
1m
Z ( )W
O
1 10 100 1k 10k 10M
Frequency(Hz)
100k 1M
W
W
W
W
+18V
-18V
ROUT
CL
OPA170
RL
G=+1
W
W
W
W
OPA170
R =
I10kW
ROUT
CL
RF=10kW
+18V
-18V
G= 1-
OPA170
OPA2170
OPA4170
SBOS557A AUGUST 2011REVISED SEPTEMBER 2011
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TYPICAL CHARACTERISTICS (continued)
VS=±18V, VCM = VS/2, RLOAD = 10kΩconnected to VS/2, and CL= 100pF, unless otherwise noted.
OPEN-LOOP GAIN AND PHASE vs FREQUENCY CLOSED-LOOP GAIN vs FREQUENCY
Figure 19. Figure 20.
OPEN-LOOP GAIN vs TEMPERATURE OPEN-LOOP OUTPUT IMPEDANCE vs FREQUENCY
Figure 21. Figure 22.
SMALL-SIGNAL OVERSHOOT vs CAPACITIVE LOAD SMALL-SIGNAL OVERSHOOT vs CAPACITIVE LOAD
(100mV Output Step) (100mV Output Step)
Figure 23. Figure 24.
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5V/div
Time(10 s/div)m
2kW
20kW
VIN
VOUT
OPA170
G= 10-
+18V
-18V
5V/div
Time(100 s/div)m
+18V
-18V
37VPP
SineWave
( 18.5V)±
OPA170
5V/div
Time(10 s/div)m
2kW
20kW
VIN
VOUT
OPA170
G= 10-
+18V
-18V
20mV/div
Time(5 s/div)m
+18V
-18V CL
RL
OPA170
G=+1
R =10k
C =10pF
W
L
L
20mV/div
Time(5 s/div)m
R =10k
C =10pF
W
L
L
+18V
-18V
RF=2kWRI=2kW
CL
OPA170
G= 1-
2V/div
Time(50 s/div)m
G=+1
R =10k
C =10pF
LW
L
OPA170
OPA2170
OPA4170
www.ti.com
SBOS557A AUGUST 2011REVISED SEPTEMBER 2011
TYPICAL CHARACTERISTICS (continued)
VS=±18V, VCM = VS/2, RLOAD = 10kΩconnected to VS/2, and CL= 100pF, unless otherwise noted.
NO PHASE REVERSAL POSITIVE OVERLOAD RECOVERY
Figure 25. Figure 26.
SMALL-SIGNAL STEP RESPONSE
NEGATIVE OVERLOAD RECOVERY (100mV)
Figure 27. Figure 28.
SMALL-SIGNAL STEP RESPONSE
(100mV) LARGE-SIGNAL STEP RESPONSE
Figure 29. Figure 30.
Copyright ©2011, Texas Instruments Incorporated Submit Documentation Feedback 11
Product Folder Link(s): OPA170 OPA2170 OPA4170
2V/div
Time(50 s/div)m
G= 1
R =10k
C =10pF
-
W
L
L
10
8
6
4
2
0
2
4
6
8
10
-
-
-
-
-
DFrom Final Value (mV)
0100
Time ( s)m
12-Bit Settling
( 1/2LSB = 0.012%)± ±
908070605040302010
−30
−25
−20
−15
−10
−5
0
5
10
15
20
25
30
−50 −25 0 25 50 75 100 125 150
Temperature (°C)
ISC (mA)
ISC, Source
ISC, Sink
G034
10
8
6
4
2
0
2
4
6
8
10
-
-
-
-
-
DFrom Final Value (mV)
060
Time ( s)m
5040302010
12-Bit Settling
( 1/2LSB = 0.012%)± ±
G = 1-
0
2.5
5
7.5
10
12.5
15
1k 10k 100k 1M 10M
Frequency (Hz)
Output Voltage (VPP )
VS = ±5 V
VS = ±1.35 V
VS = ±15 V
Maximum output range without
slew−rate induced distortion
G035
140
120
100
80
60
40
20
0
EMIRRIN+(dB)
10M 10G
Frequency(Hz)
100M
P = 10dBm
V = 18V
V =0V
-
±
RP
S
CM
1G
OPA170
OPA2170
OPA4170
SBOS557A AUGUST 2011REVISED SEPTEMBER 2011
www.ti.com
TYPICAL CHARACTERISTICS (continued)
VS=±18V, VCM = VS/2, RLOAD = 10kΩconnected to VS/2, and CL= 100pF, unless otherwise noted.
LARGE-SIGNAL SETTLING TIME
LARGE-SIGNAL STEP RESPONSE (10V Positive Step)
Figure 31. Figure 32.
LARGE-SIGNAL SETTLING TIME
(10V Negative Step) SHORT-CIRCUIT CURRENT vs TEMPERATURE
Figure 33. Figure 34.
MAXIMUM OUTPUT VOLTAGE vs FREQUENCY EMIRR IN+ vs FREQUENCY
Figure 35. Figure 36.
12 Submit Documentation Feedback Copyright ©2011, Texas Instruments Incorporated
Product Folder Link(s): OPA170 OPA2170 OPA4170
5V/div
Time(100 s/div)m
+18V
-18V
37VPP
SineWave
( 18.5V)±
OPA170
OPA170
OPA2170
OPA4170
www.ti.com
SBOS557A AUGUST 2011REVISED SEPTEMBER 2011
APPLICATION INFORMATION
The OPAx170 family of operational amplifiers This device can operate with full rail-to-rail input
provides high overall performance. These devices are 100mV beyond the positive rail, but with reduced
ideal for many general-purpose applications. The performance within 2V of the positive rail. The typical
excellent offset drift of only 2µV/°C provides excellent performance in this range is summarized in Table 2.
stability over the entire temperature range. In
addition, the device offers very good overall PHASE-REVERSAL PROTECTION
performance with high CMRR, PSRR, and AOL. As The OPAx170 family has an internal phase-reversal
with all amplifiers, applications with noisy or protection. Many op amps exhibit a phase reversal
high-impedance power supplies require decoupling when the input is driven beyond its linear
capacitors placed close to the device pins. In most common-mode range. This condition is most often
cases, 0.1µF capacitors are adequate. encountered in noninverting circuits when the input is
driven beyond the specified common-mode voltage
OPERATING CHARACTERISTICS range, causing the output to reverse into the opposite
The OPAx170 family of amplifiers is specified for rail. The input of the OPAx170 prevents phase
operation from 2.7V to 36V (±1.35V to ±18V). Many reversal with excessive common-mode voltage.
of the specifications apply from 40°C to +125°C. Instead, the output limits into the appropriate rail. This
Parameters that can exhibit significant variance with performance is shown in Figure 37.
regard to operating voltage or temperature are
presented in the Typical Characteristics.
GENERAL LAYOUT GUIDELINES
For best operational performance of the device, good
printed circuit board (PCB) layout practices are
recommended. Low-loss, 0.1µF bypass capacitors
should be connected between each supply pin and
ground, placed as close to the device as possible. A
single bypass capacitor from V+ to ground is
applicable to single-supply applications.
COMMON-MODE VOLTAGE RANGE
The input common-mode voltage range of the Figure 37. No Phase Reversal
OPAx170 series extends 100mV below the negative
rail and within 2V of the positive rail for normal
operation.
Table 2. Typical Performance Range
PARAMETER MIN TYP MAX UNIT
Input Common-Mode Voltage (V+) 2 (V+) + 0.1 V
Offset voltage 7 mV
vs Temperature 12 µV/°C
Common-mode rejection 65 dB
Open-loop gain 60 dB
Gain-bandwidth product 0.3 MHz
Slew rate 0.3 V/µs
Copyright ©2011, Texas Instruments Incorporated Submit Documentation Feedback 13
Product Folder Link(s): OPA170 OPA2170 OPA4170
5kW
OPA170
10mAmax
V+
VIN
VOUT
IOVERLOAD
W
W
W
W
+18V
-18V
ROUT
CL
OPA170
RL
G=+1
W
W
W
W
OPA170
R =
I10kW
ROUT
CL
RF=10kW
+18V
-18V
G= 1-
OPA170
OPA2170
OPA4170
SBOS557A AUGUST 2011REVISED SEPTEMBER 2011
www.ti.com
CAPACITIVE LOAD AND STABILITY or even the output pin. Each of these different pin
functions have electrical stress limits determined by
The dynamic characteristics of the OPAx170 have the voltage breakdown characteristics of the
been optimized for common operating conditions. The particular semiconductor fabrication process and
combination of low closed-loop gain and high specific circuits connected to the pin. Additionally,
capacitive loads decreases the phase margin of the internal electrostatic discharge (ESD) protection is
amplifier and can lead to gain peaking or oscillations. built into these circuits to protect them from
As a result, heavier capacitive loads must be isolated accidental ESD events both before and during
from the output. The simplest way to achieve this product assembly.
isolation is to add a small resistor (for example, ROUT
equal to 50Ω) in series with the output. Figure 38 and These ESD protection diodes also provide in-circuit,
Figure 39 illustrate graphs of small-signal overshoot input overdrive protection, as long as the current is
versus capacitive load for several values of ROUT. limited to 10mA as stated in the Absolute Maximum
Also, refer to Applications Bulletin AB-028,Feedback Ratings.Figure 40 shows how a series input resistor
Plots Define Op Amp AC Performance (literature may be added to the driven input to limit the input
number SBOA015, available for download from the TI current. The added resistor contributes thermal noise
website), for details of analysis techniques and at the amplifier input and its value should be kept to a
application circuits. minimum in noise-sensitive applications.
Figure 40. Input Current Protection
An ESD event produces a short duration,
high-voltage pulse that is transformed into a short
duration, high-current pulse as it discharges through
a semiconductor device. The ESD protection circuits
are designed to provide a current path around the
Figure 38. Small-Signal Overshoot versus operational amplifier core to prevent it from being
Capacitive Load (100mV Output Step, G = +1) damaged. The energy absorbed by the protection
circuitry is then dissipated as heat.
When the operational amplifier connects into a circuit,
the ESD protection components are intended to
remain inactive and not become involved in the
application circuit operation. However, circumstances
may arise where an applied voltage exceeds the
operating voltage range of a given pin. Should this
condition occur, there is a risk that some of the
internal ESD protection circuits may be biased on,
and conduct current. Any such current flow occurs
through ESD cells and rarely involves the absorption
device.
If there is an uncertainty about the ability of the
supply to absorb this current, external zener diodes
may be added to the supply pins. The zener voltage
Figure 39. Small-Signal Overshoot versus must be selected such that the diode does not turn
Capacitive Load (100mV Output Step, G = 1) on during normal operation. However, its zener
voltage should be low enough so that the zener diode
ELECTRICAL OVERSTRESS conducts if the supply pin begins to rise above the
Designers often ask questions about the capability of safe operating supply voltage level.
an operational amplifier to withstand electrical
overstress. These questions tend to focus on the
device inputs, but may involve the supply voltage pins
14 Submit Documentation Feedback Copyright ©2011, Texas Instruments Incorporated
Product Folder Link(s): OPA170 OPA2170 OPA4170
PACKAGE OPTION ADDENDUM
www.ti.com 16-Aug-2012
Addendum-Page 1
PACKAGING INFORMATION
Orderable Device Status (1) Package Type Package
Drawing Pins Package Qty Eco Plan (2) Lead/
Ball Finish MSL Peak Temp (3) Samples
(Requires Login)
OPA170AID ACTIVE SOIC D 8 75 Green (RoHS
& no Sb/Br) CU NIPDAU Level-2-260C-1 YEAR
OPA170AIDBVR ACTIVE SOT-23 DBV 5 3000 Green (RoHS
& no Sb/Br) CU NIPDAU Level-2-260C-1 YEAR
OPA170AIDBVT ACTIVE SOT-23 DBV 5 250 Green (RoHS
& no Sb/Br) CU NIPDAU Level-2-260C-1 YEAR
OPA170AIDR ACTIVE SOIC D 8 2500 Green (RoHS
& no Sb/Br) CU NIPDAU Level-2-260C-1 YEAR
OPA170AIDRLR PREVIEW SOT DRL 5 4000 Green (RoHS
& no Sb/Br) CU NIPDAU Level-1-260C-UNLIM
OPA170AIDRLT PREVIEW SOT DRL 5 250 Green (RoHS
& no Sb/Br) CU NIPDAU Level-1-260C-UNLIM
OPA2170AID ACTIVE SOIC D 8 75 Green (RoHS
& no Sb/Br) CU NIPDAU Level-2-260C-1 YEAR
OPA2170AIDGK ACTIVE VSSOP DGK 8 80 Green (RoHS
& no Sb/Br) CU NIPDAU Level-2-260C-1 YEAR
OPA2170AIDGKR ACTIVE VSSOP DGK 8 2500 Green (RoHS
& no Sb/Br) CU NIPDAU Level-2-260C-1 YEAR
OPA2170AIDR ACTIVE SOIC D 8 2500 Green (RoHS
& no Sb/Br) CU NIPDAU Level-2-260C-1 YEAR
OPA4170AID ACTIVE SOIC D 14 50 Green (RoHS
& no Sb/Br) CU NIPDAU Level-3-260C-168 HR
OPA4170AIDR ACTIVE SOIC D 14 2500 Green (RoHS
& no Sb/Br) CU NIPDAU Level-3-260C-168 HR
OPA4170AIPW ACTIVE TSSOP PW 14 90 Green (RoHS
& no Sb/Br) CU NIPDAU Level-2-260C-1 YEAR
OPA4170AIPWR ACTIVE TSSOP PW 14 2000 Green (RoHS
& no Sb/Br) CU NIPDAU Level-2-260C-1 YEAR
(1) The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
PACKAGE OPTION ADDENDUM
www.ti.com 16-Aug-2012
Addendum-Page 2
(2) Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest availability
information and additional product content details.
TBD: The Pb-Free/Green conversion plan has not been defined.
Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that
lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes.
Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between
the die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above.
Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight
in homogeneous material)
(3) MSL, Peak Temp. -- The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information
provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and
continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.
TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.
OTHER QUALIFIED VERSIONS OF OPA170 :
Enhanced Product: OPA170-EP
NOTE: Qualified Version Definitions:
Enhanced Product - Supports Defense, Aerospace and Medical Applications
TAPE AND REEL INFORMATION
*All dimensions are nominal
Device Package
Type Package
Drawing Pins SPQ Reel
Diameter
(mm)
Reel
Width
W1 (mm)
A0
(mm) B0
(mm) K0
(mm) P1
(mm) W
(mm) Pin1
Quadrant
OPA170AIDBVR SOT-23 DBV 5 3000 180.0 8.4 3.23 3.17 1.37 4.0 8.0 Q3
OPA170AIDBVT SOT-23 DBV 5 250 180.0 8.4 3.23 3.17 1.37 4.0 8.0 Q3
OPA170AIDR SOIC D 8 2500 330.0 12.4 6.4 5.2 2.1 8.0 12.0 Q1
OPA2170AIDGKR VSSOP DGK 8 2500 330.0 12.4 5.3 3.4 1.4 8.0 12.0 Q1
OPA2170AIDR SOIC D 8 2500 330.0 12.4 6.4 5.2 2.1 8.0 12.0 Q1
OPA4170AIDR SOIC D 14 2500 330.0 16.4 6.5 9.0 2.1 8.0 16.0 Q1
OPA4170AIPWR TSSOP PW 14 2000 330.0 12.4 6.9 5.6 1.6 8.0 12.0 Q1
PACKAGE MATERIALS INFORMATION
www.ti.com 16-Aug-2012
Pack Materials-Page 1
*All dimensions are nominal
Device Package Type Package Drawing Pins SPQ Length (mm) Width (mm) Height (mm)
OPA170AIDBVR SOT-23 DBV 5 3000 202.0 201.0 28.0
OPA170AIDBVT SOT-23 DBV 5 250 202.0 201.0 28.0
OPA170AIDR SOIC D 8 2500 367.0 367.0 35.0
OPA2170AIDGKR VSSOP DGK 8 2500 366.0 364.0 50.0
OPA2170AIDR SOIC D 8 2500 367.0 367.0 35.0
OPA4170AIDR SOIC D 14 2500 367.0 367.0 38.0
OPA4170AIPWR TSSOP PW 14 2000 367.0 367.0 35.0
PACKAGE MATERIALS INFORMATION
www.ti.com 16-Aug-2012
Pack Materials-Page 2
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