Rugged Power MOSFETs File Number 2289 IRFP254, IRFP255 IRFP256, IRFP257 Avalanche-Energy-Rated N-Channel Power MOSFETs 22 A and 20 A, 275 V and 250 V N-CHANNEL ENHANCEMENT MODE oston) = 0.14 Qand 0.17 Q Features: D a Single pulse avalanche energy rated a SOA is power-dissipation limited a Nanosecond switching speeds a Linear transfer characteristics a High input impedance g 275, 250 V dc rated - 120 V ac line system operation gacs-4z688 TERMINAL DIAGRAM The IRFP254, IRFP255, IRFP256 and IRFP257 are advanced power MOSFETs designed, tested, and guaranteed to with- TERMINAL DESIGNATION stand a specified level of energy in the breakdown ava- SOURCE lanche mode of operation. These are n-channel enhance- g ment-mode silicon-gate power field-effect transistors de- signed for applications such as switching regulators, switch- DRAIN Ly | i | ing converters, motor drivers, relay drivers, and drivers for DRAIN O Ss | [1] high-power bipolar switching transistors requiring high speed and low gate-drive power. These types can be oper- ated directly from integrated circuits. Top view oare The !RFP-types are supplied in the JEDEC TO-247 plastic package. JEDEC TO-247 ABSOLUTE-MAXIMUM RATINGS CHARACTERISTIC IRFP254 IRFP255 IRFP256 IRFP257 UNITS Drain-Source Voltage Vos 250 250 275 275 Vv Drain-Gate Voltage (Res = 20 kQ) O Vocr 250 250 275 275 Continuous Drain Current tb @ Tce = 25C 22 20 22 20 A Continuous Orain Current Ip @ Te = 100C 14 12 14 12 A Pulsed Drain Current @ lon 88 80 88 80 A Gate-Source Voltage Ves +20 Vv Maximum Power Dissipation Pp @ Te = 25C 150 Ww Linear Derating Factor 1.2 wrc Single-Pulse Avalanche Energy Rating @ Eas 1000 mJ Operating Junction and Ty -55 to +150 C Storage Temperature Range Tatg Lead Temperature 300 (0.063 in. [1.6 mm] from case for 10 s) C 6-289Rugged Power MOSFETs IRFP254, IRFP255, IRFP256, IRFP257 ELECTRICAL CHARACTERISTICS At Case Temperature (Tc) = 25C Unless Otherwise Specified Turn-on speed is substantially controlled by Ls + Lo. CHARACTERISTIC TYPE MIN. | TYP. | MAX. [UNITS TEST CONDITIONS Drain-Source Breakdown Voltage BVoss | IRFP256 _. _ = IREP257 275 Vv Ves =OV IRFP254 _ _ = IRFP255 250 Vv Ip = 250 pA Gate Threshold Voltage Vestn ALL 2.0 = 4.0 Vv Vos = Vas, In = 250 uA Gate-Source Leakage Forward less ALL _ 100 nA Ves = 20 V Gate-Source Leakage Reverse lass ALL =~ = -100 nA Ves = 20V Zero-Gate Voltage Drain Current loss ALL = = 250 HA Vos = Max. Rating, Ves = 0 V ~ 1000 HA Vos = Max. Rating x 0.8, Ves = 0 V, Te = 125C On-State Drain Current @ loon IRFP254 inFp256 | 2 [ | A Vos > Ipion X Foston) max, Vas = 10 V IRFP255 | 49 A IRFP257 _ Static Drain-Source On-State pstom IRFP254 Resistance "| tarp2se | [| 217 | 014 | 2 Ves = 10V, lp =12A Hird 014 | 017 | 0 IRFP257 7 a . Forward Transconductance @ Qts ALL W 17 _ S(Q) | Vos > Ipten) X foston max, lo = 12 A Input Capacitance Ciss ALL = 2700 = pF - - - Quiput Capacitance Coss ALL _ | 580 | pF aes Figs bs = 25 V, f= 1.0 MHz Reverse Transfer Capacitance Crss ALL _ 130 pF . Turn-On Delay Time tatons ALL _~ 19 29 ns Von = 125 V, Ip = 22 A, Zo = 6.20 Rise Time t ALL _ 84 130 ns See Fig. 16 Turn-Off Delay Time tarot ALL 75 110 ns (MOSFET switching times are essentially Fall Time tr ALL _ 65 98 ns independent of operating temperature.) Total Gate Charge Qs _ Vas =_10 V, Ip = 22 A, Vos = 0,8 Max. Rating. {Gate-Source Plus Gate-Drain) ALL sid 130 nc See Fig. 17 for test circuit. (Gate charge is Gate-Source Charge Qgs ALL _ 14 20 nc essentially independent of operating Gate-Drain (Miller) Charge Qoa ALL 73 110 nC | temperature.) Internat Drain Inductance bo ALL 5 _ nH Measured from the Modified MOSFET drain lead, 6mm symbol showing the (0.25 in.) from package internal device to center of die. inductances. 3 Internal Source Inductance Ls ALL _ 13 _ nH Measured from the & source lead, 6mm co Ty (0.25 in.) from package s to source bonding pad. s THERMAL RESISTANCE Junction-to-Case Resc ALL = = 0.83 | C/W Case-to-Sink Recs ALL = 0.12 | C/W | Mounting surface flat, smooth, and greased. 4 Junction-to-Ambient Raa ALL = 30 C/W | Free air operation. SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Continuous Source Current Is IRFP254 _ 29 a | Modified MOSFET symbol (Body Diode) tRFP256 ~~ showing the integral BR IRFP255 reverse P-N junction rectifier. IRFP257 | 7 | # A Pulse Source Current Ism IRFP254 _ _ 88 A s (Body Diode) @ IRFP256 , IRFP255 inFP257 | | | 88 A Diode Forward Voltage @ Vsp ALL _ _ 1.8 Vv Te = 25C, Is = 22 A, Vas = OV Reverse Recovery Time te ALL 150 310 650 ns | Ty = 150C, Ip = 22 A, die/dt = 100 A/us Reverse Recovered Charge Qaer ALL 19 4 8.4 uC | Ts = 160C, lr = 22 A, dle/dt = 100 A/ps Forward Turn-on Time ton ALL Intrinsic turn-on time is negligible. @ Ty = 25C to 150C. Pulse Test: Pulse width < 300 ys, Duty Cycle = 2%. 6-290 @ Repetitive Rating: Pulse width limited by max. junction temperature. See Transient Thermal tmpedance Curve (Fig. 5). @ Voo = 50 V, Starting Ty = 25C, L = 3.3 mH, Re = 25 Q, Peak I = 22 A (See Figs. 14 & 15).Rugged Power MOSFETs Ig. ORAIN CURRENT (AMPERES) Ip. DRAIN CURRENT (AMPERES) 40 10 ST 32 24 abv 0 1 0 25 50 73 100 Vog: DRAIN-TO-SQURCE VOLTAGE (VOLTS) Fig. 1 - Typical output characteristics. Q 0.0 1.0 2.0 3.0 4.0 Vps. DRAIN-TO-SQURCE VOLTAGE (VOLTS) Fig. 3 - Typical saturation characteristics. THERMAL RESPONSE (Zh Jc) 125 5.0 4075 1074 10-3 t4, AECTANGULAR PULSE DURATION (SECONDS) IRFP254, IRFP255, IRFP256, IRFP257 108 Vpg 2 50V wo 2 oc a 2 10 = EF 5 Zz WW a a a 3 a a 4 a a 5 a 5 2 0.4 0 2 4 6 8 10 Vgg GATE-TO-SOURCE VOLTAGE (VOLTS) Fig. 2 - Typical transfer characteristics. 103 OPERATION IN THIS AREA LIMITED BY Ros (ON) on ny (RFP254,256 a a IRFP255,257 IRFP254,256 2 0 \RFP255,257 Ip, DRAIN CURRENT (AMPERES) a 3 To =25C 5 = Ty= 150C SINGLE PULSE 2 0.4 1 2 5 yw 2 5 492 2 = 498 Vpg. DRAIN-TO-SOURCE VOLTAGE (VOLTS) 92GS-44231 Fig. 4 - Maximum safe operating area. YL NOTES: 1. DUTY FACTOR, D=t,/to 2. PEAK Ty=Poy X Zthye + Te 1072 0.4 1 10 Fig. 5 - Maximum effective transient thermal impedance, junction-to-case vs. pulse duration. 6-291Rugged Power MOSFETs IRFP254, IRFP255, IRFP256, IRFP257 25 102 Vog 2 SOV TEST = = gS 9 loa @ 20 ww 3 a z 4 = w 2 5 10 o 15 Fy Z a 5 5 B 8 a 5 2 5 10 Oo a w Zz wt < a xc Ys a 5 wv oo - a x G2 0 0.4 0 8 16 24 32 40 0.0 0.4 0.8 1.2 1.6 2.0 Ip. DRAIN CURRENT (AMPERES) Veg, SQURCE-TO-DRAIN VOLTAGE (VOLTS) Fig. 6 - Typical transconductance vs. drain current. Fig. 7 - Typical source-drain diode forward voltage. 1.25 3. Ld WwW 2 g 4 at 2 a 1.45 8.4 z 8 8 Z 4% 6 # 91.05 Woot. On aw BZ 28 Og n as 1 =< 3 x z & 80.95 , Si.2 =< zz 4 = 5 a 4 a << . 0.85 = 0.6 Oo oa 0.75 * 0.0 Veg = 10V "=60 -40 ~20 0 20 40 60 80 100 120 140 160 -60 ~40 -20 0 20 40 60 80 100 120 140 160 1 JUNCTION TEMPERATURE { C) Ty JUNCTION TEMPERATURE ( C) Fig. 8 - Breakdown voltage vs. temperature. Fig. 9 - Normalized on-resistance vs. temperature. 7500 = = = Cys + Cgg. Cys SHORTED a = Cog 5 9 6000 3 = Cyg + Cgs Cgg / (gg + Cgq) = v Cys * C w 6 ds gd S 4 Ww 45) gene g = 4 Oo iia g > 3 @ 3000 a I ob 2 So w w << 1500 6 8 > FOR TEST CIRCUIT 0 } SEE FIGURE 16 1 2 5 10 2 5 402 25 50 75 100 125 Vos. DRAIN-TO-SOURCE VOLTAGE (VOLTS) Gg. TOTAL GATE CHARGE (nC) Fig. 10 - Typical capacitance vs. drain-to-source voltage. Fig. 11 - Typical gate charge vs. gate-to-source voltage. 6-292Rugged Power MOSFETs Rog (on): DRAIN-TO-SOURCE ON RESISTANCE Qo 20 40 60 80 Tp. ORAIN CURRENT (AMPEFIES) Fig. 12 - Typical on-resistance vs. drain current. VARY tp TO OBTAIN REQUIRED PEAK out Res + Vas=10V f | 1 t t rrr 0.912 9268-44316 Fig. 14 - Unclamped energy test circuit. 75V ADJUST RL TO OBTAIN SPECIFIED Ip asa Ves * Vos CTT a | PULSE ot DUT (GENERATOR? * 16.20 t | SOURCE IMPEDANCE Lolo tf 92GS-8411781 Fig. 16 - Switching time test circuit. 100 IRFP254, IRFP255, IRFP256, IRFP257 25 20 IRFP254, IRFP256 (AMPERES) IRFP255, DRAIN CURRENT Ip, au Q 25 50 275 100 125 150 Tc. CASE TEMPERATURE {*) Fig. 13 - Maximum drain current vs. case temperature. 9268-44101 Fig. 15 - Unclamped energy waveforms. O+Vps {ISOLATED SUPPLY) SAME TYPE CURRENT REGULATOR Ig = CURRENT CURRENT SHUNT SHUNT 9268-44103 Fig. 17 - Gate charge test circuit. 6-293