JANTXV2N2604UB - Microsemi Corp.

TECHNICAL DATA SHEET

6 Lake Street, Lawrence, MA 01841 Gort Road Business Park, Ennis, Co. Clare, Ireland

1-800-446-1158 / (978) 620-2600 / Fax: ( 978) 689-0803 Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298

Website: http: //www.microsemi.com

PNP SILICON LOW POWER TRANSISTOR

Qualified per MIL-PRF-19500/354

T4-LDS-0092 Rev. 2 (101320) Page 1 of 4

DEVICES LEVELS

2N2604 2N2604UB JAN

2N2605 2N2605UB JANTX

JANTXV

ABSOLUTE MAXIMUM RATI NG S (TC = +25°C unless otherwise noted)

Parameters / Test Conditions Symbol 2N2604 2N2605 Unit

Collector-Base Voltage VCBO 80 70 Vdc

Collector-Emitter Voltage VCEO 60 Vdc

Emitter-Base Voltage VEBO 6.0 Vdc

Collector Current IC 30 mAdc

Total Power Dissipation @ TA = +25°C (1) P

T 400 mW/°C

Operating & Storage Junction Temperature Range TJ, Tstg -65 to +200 °C

THERMAL CHARACTERISTICS

Parameters / Test Conditions Symbol Max. Unit

Thermal Resistance, Junction-to-Ambient

RθJA

437

°C/mW

UB 275

Note:

1/ Consult 19500/354 for thermal curves

ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted)

Parameters / Test Conditions Symbol Min. Max. Unit

OFF CHARACTERTICS

Collector-Base Cutoff Current

ICBO

VCB = 80V dc

VCB = 70V dc

VCB = 50V dc

VCB = 50V dc, TA = +150°C

2N2604, UB

2N2605, UB

2N2604, 2N2605, UB

10.0

5.0

uAdc

nAdc

uAdc

Collector-Emitter Breakdown Current

IC = 10mAdc V(BR)CEO 60 Vdc

Emitter-Base Cutoff Current

VEB = 6.0Vdc

VEB = 5.0Vdc

IEBO

10.0

2.0

uAdc

ηAdc

Collector-Emitter Cutoff Current

VCE = 50Vdc ICES 10

ηAdc

TO-46 (TO-206AB )

UB Package

TECHNICAL DATA SHEET

6 Lake Street, Lawrence, MA 01841 Gort Road Business Park, Ennis, Co. Clare, Ireland

1-800-446-1158 / (978) 620-2600 / Fax: ( 978) 689-0803 Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298

Website: http: //www.microsemi.com

T4-LDS-0092 Rev. 2 (101320) Page 2 of 4

ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted) (CONT.)

Parameters / Test Conditions Symbol Min. Max. Unit

ON CHARACTERTICS (2)

Forward-Current Transfer Ratio

hFE

IC = 10

μ

Adc, VCE = 5.0Vdc 2N2604, UB

2N2605, UB

40

100

120

300

IC = 500

μ

Adc, VCE = 5.0Vdc 2N2604, UB

2N2605, UB

60

150

180

450

IC = 10mAdc, VCE = 5.0Vdc 2N2604, UB

2N2605, UB

40

100

160

400

IC = 10mAdc, VCE = 5.0Vdc, TA = -55°C 2N2604, UB

2N2605, UB

15

30

Collector-Emitter Saturation Voltage

VCE(sat)

Vdc

IC = 10mAdc, IB = 500

μ

Adc 0.3

Base-Emitter Saturation Voltage

VBE(sat)

Vdc

IC = 10mA, IB = 500

μ

Adc 0.7 0.9

DYNAMIC CHARACTERISTICS

Parameters / Test Conditions Symbol Min. Max. Unit

Small-Signal Short-Circuit Input Impedance

hie

kΩ

IC = 1.0mAdc, VCB = 5.0Vdc, f = 1.0kHz 2N2604, UB

2N2605, UB

1.0

2.0

10

20

Small-Signal Open-Circuit Forward Current Output Admittance

hoe

μmhos

IC = 1.0mAdc, VCE = 5.0Vdc, f = 1.0kHz 2N2604, UB

2N2605, UB

40

60

Small-Signal Short-Circuit Forward Current Transfer Ratio

hfe

IC = 1.0mAdc, VCE = 5.0Vdc, f = 1.0kHz 2N2604, UB

2N2605, UB

60

150

180

450

Magnitude of Small-Signal Forward Current Transfer Ratio

|hfe|

IC = 0.5mAdc, VCE = 5.0Vdc, f = 30MHz 1.0 8.0

Output Capacitance

Cobo

pF

VCB = 5.0Vdc, IE = 0, 100 kHz ≤ f ≤ 1.0MHz 6.0

Noise Figure

dB

VCE = 5.0Vdc, IC = 10

μ

Adc, Rg = 10kΩ, f = 100Hz

VCE = 5.0Vdc, IC = 10μAdc, Rg = 10kΩ, f = 1.0kHz

VCE = 5.0Vdc, IC = 10μAdc, Rg = 10kΩ, f = 10kHz

F

1

F2

F3

5.0

3.0

(2) Pulse Test: Pulse Width = 300μs, Duty Cycle ≤ 2.0%

TECHNICAL DATA SHEET

6 Lake Street, Lawrence, MA 01841 Gort Road Business Park, Ennis, Co. Clare, Ireland

1-800-446-1158 / (978) 620-2600 / Fax: ( 978) 689-0803 Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298

Website: http: //www.microsemi.com

T4-LDS-0092 Rev. 2 (101320) Page 3 of 4

PACKAGE DIMENSIONS

NOTES:

1. Dimensions are in inches. Lead 1 is emitter, lead 2 is base, and lead 3 is collector.

2. Millimeters are given for general information only.

3. Symbol TL is measured from HD maximum.

4. Details of outline in this zone are optional.

5. Leads at gauge plane .054 +.001 -.000 inch (1.37 +0.03 -0.00 mm) below seating plane shall be within .007 inch (0.18

mm) radius of true position (TP) at maximum material condition (MMC) relative to tab at MMC. The device may be

measured by direct methods or by the gauge and gauging procedure.

6. Symbol LU applies between L1 and L2. Dimension LD applies between L2 and LL minimum.

7. Lead number three is electrically connected to case.

8. Beyond r maximum, TW shall be held for a minimum length of .011 inch (0.28 mm).

9. Symbol r applied to both inside corners of tab.

10. In accordance with ASME Y14.5M, diameters are equivalent to φx symbology.

FIGURE 1. Physical dimensions - (TO-46).

Symbol

Dimensions

Inches Millimeters Note

Min Max Min Max

CD .178 .195 4.52 4.95

CH .065 .085 1.65 2.16

HD .209 .230 5.31 5.84

LC .100 TP 2.54 TP 5

LD .016 .021 0.41 0.53 6

LL .500 1.750 12.70 44.45 6

LU .016 .019 0.41 0.48 6

L1 .050 1.27 6

L2 .250 6.35 6

Q .040 1.02 4

TL .028 .048 0.71 1.22 3, 8

TW .036 .046 0.91 1.17 3, 8

r .010 0.25 9

α 45° TP 45° TP 5

TECHNICAL DATA SHEET

6 Lake Street, Lawrence, MA 01841 Gort Road Business Park, Ennis, Co. Clare, Ireland

1-800-446-1158 / (978) 620-2600 / Fax: ( 978) 689-0803 Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298

Website: http: //www.microsemi.com

T4-LDS-0092 Rev. 2 (101320) Page 4 of 4

PACKAGE DIMENSIONS

Dimensions

Symbol Inches Millimeters Notes

Min Max Min Max

BH .046 .056 1.17 1.42 LS1 .035 .039 0.89 0.99

BL .115 .128 2.92 3.25 LS2 .071 .079 1.80 2.01

BW .085 .108 2.16 2.74 LW .016 .024 0.41 0.61

CL .128 3.25

r .008 0.20

CW .108 2.74

r

1 .012 0.31

LL1 .022 .038 0.56 0.97 r

2 .022 0.56

LL2 .017 .035 0.43 0.89

NOTES:

1. Dimensions are in inches.

2. Millimeters are given for general information only.

3. Hatched areas on package denote metallized areas

4. Pad 1 = Base, Pad 2 = Emitter, Pad 3 = Collector, Pad 4 = Shielding connected to the lid.

5. In accordance with ASME Y14.5M, diameters are equivalent to φx symbology.

FIGURE 2. Physical dimensions, surface mount (UB version).