MMBT2222AL - ON Semiconductor - Datasheet.Support

 Semiconductor Components Industries, LLC, 2004

September, 2004 − Rev. 5 1Publication Order Number:

MMBT2222LT1/D

MMBT2222LT1,

MMBT2222ALT1

MMBT2222ALT1 is a Preferred Device

General Purpose

Transistors

NPN Silicon

Features

•Pb−Free Package May be Available. The G−Suffix Denotes a

Pb−Free Lead Finish

MAXIMUM RATINGS

Rating Symbol Value Unit

Collector−Emitter Voltage

MMBT2222LT1

MMBT2222ALT1

VCEO 30

Vdc

Collector−Base Voltage

MMBT2222LT1

MMBT2222ALT1

VCBO 60

Vdc

Emitter−Base Voltage

MMBT2222LT1

MMBT2222ALT1

VEBO 5.0

6.0

Vdc

Collector Current − Continuous IC600 mAdc

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Total Device Dissipation

FR−5 Board (Note 1)

TA = 25°C

Derate above 25°C

PD225

1.8

mW/°C

Thermal Resistance

Junction−to−Ambient RJA 556 °C/W

Total Device Dissipation

Alumina Substrate (Note 2)

TA = 25°C

Derate above 25°C

PD300

2.4

mW/°C

Thermal Resistance

Junction−to−Ambient RJA 417 °C/W

Junction and Storage

Temperature Range TJ, Tstg −55 to

+150 °C

Maximum ratings are those values beyond which device damage can occur.

Maximum ratings applied to the device are individual stress limit values (not

normal operating conditions) and are not valid simultaneously. If these limits are

exceeded, device functional operation is not implied, damage may occur and

reliability may be affected.

1. FR−5 = 1.0  0.75  0.062 in.

2. Alumina = 0.4  0.3  0.024 in. 99.5% alumina.

Device Package Shipping†

ORDERING INFORMATION

MMBT2222LT1 SOT−23

SOT−23

CASE 318

Style 6

3000/Tape & Reel

Preferred devices are recommended choices for future use

and best overall value.

MARKING

DIAGRAM

xxx M

xxx = Specific Device Code

= (M1B = MMBT2222LT1,

= 1P = MMBT2222ALT1)

M = Date Code

COLLECTOR

BASE

EMITTER

MMBT2222ALT1 SOT−23 3000/Tape & Reel

MMBT2222LT3 SOT−23 10,000/Tape & Reel

MMBT2222ALT3 SOT−23 10,000/Tape & Reel

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

MMBT2222ALT3G SOT−23

(Pb−Free) 10,000/Tape & Reel

MMBT2222ALT1G SOT−23

(Pb−Free) 3000/Tape & Reel

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MMBT2222LT1G SOT−23

(Pb−Free) 3000/Tape & Reel

MMBT2222LT1, MMBT2222ALT1

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ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic Symbol Min Max Unit

OFF CHARACTERISTICS

Collector−Emitter Breakdown Voltage (IC = 10 mAdc, IB = 0) MMBT2222

MMBT2222A V(BR)CEO 30

40 −

−Vdc

Collector−Base Breakdown Voltage (IC = 10 Adc, IE = 0) MMBT2222

MMBT2222A V(BR)CBO 60

75 −

−Vdc

Emitter−Base Breakdown Voltage (IE = 10 Adc, IC = 0) MMBT2222

MMBT2222A V(BR)EBO 5.0

6.0 −

−Vdc

Collector Cutoff Current (VCE = 60 Vdc, VEB(off) = 3.0 Vdc) MMBT2222A ICEX − 10 nAdc

Collector Cutoff Current (VCB = 50 Vdc, IE = 0) MMBT2222

(VCB = 60 Vdc, IE = 0) MMBT2222A

(VCB = 50 Vdc, IE = 0, TA = 125°C) MMBT2222

(VCB = 60 Vdc, IE = 0, TA = 125°C) MMBT2222A

ICBO −

−

0.01

Adc

Emitter Cutoff Current (VEB = 3.0 Vdc, IC = 0) MMBT2222A IEBO − 100 nAdc

Base Cutoff Current (VCE = 60 Vdc, VEB(off) = 3.0 Vdc) MMBT2222A IBL − 20 nAdc

ON CHARACTERISTICS

DC Current Gain

(IC = 0.1 mAdc, VCE = 10 Vdc)

(IC = 1.0 mAdc, VCE = 10 Vdc)

(IC = 10 mAdc, VCE = 10 Vdc)

(IC = 10 mAdc, VCE = 10 Vdc, TA = −55°C) MMBT2222A only

(IC = 150 mAdc, VCE = 10 Vdc) (Note 3)

(IC = 150 mAdc, VCE = 1.0 Vdc) (Note 3)

(IC = 500 mAdc, VCE = 10 Vdc) (Note 3) MMBT2222

MMBT2222A

hFE 35

100

−

300

−

Collector−Emitter Saturation Voltage (Note 3)

(IC = 150 mAdc, IB = 15 mAdc) MMBT2222

MMBT2222A

(IC = 500 mAdc, IB = 50 mAdc) MMBT2222

MMBT2222A

VCE(sat) −

−

0.4

0.3

1.6

1.0

Vdc

Base−Emitter Saturation Voltage (Note 3)

(IC = 150 mAdc, IB = 15 mAdc) MMBT2222

MMBT2222A

(IC = 500 mAdc, IB = 50 mAdc) MMBT2222

MMBT2222A

VBE(sat) −

0.6

−

1.3

1.2

2.6

2.0

Vdc

SMALL−SIGNAL CHARACTERISTICS

Current−Gain − Bandwidth Product (Note 4)

(IC = 20 mAdc, VCE = 20 Vdc, f = 100 MHz) MMBT2222

MMBT2222A

fT250

300 −

−

MHz

Output Capacitance

(VCB = 10 Vdc, IE = 0, f = 1.0 MHz) Cobo − 8.0 pF

Input Capacitance

(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) MMBT2222

MMBT2222A

Cibo −

−30

Input Impedance

(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) MMBT2222A

(IC = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz) MMBT2222A

hie 2.0

0.25 8.0

1.25

k

Voltage Feedback Ratio

(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) MMBT2222A

(IC = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz) MMBT2222A

hre −

−8.0

4.0

X 10−4

Small−Signal Current Gain

(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) MMBT2222A

(IC = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz) MMBT2222A

hfe 50

75 300

375

−

3. Pulse Test: Pulse Width  300 s, Duty Cycle  2.0%.

4. fT is defined as the frequency at which |hfe| extrapolates to unity.

MMBT2222LT1, MMBT2222ALT1

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ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic UnitMaxMinSymbol

SMALL−SIGNAL CHARACTERISTICS

Output Admittance

(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) MMBT2222A

(IC = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz) MMBT2222A

hoe 5.0

25 35

200

mhos

Collector Base Time Constant

(IE = 20 mAdc, VCB = 20 Vdc, f = 31.8 MHz) MMBT2222A rb, Cc− 150 ps

Noise Figure

(IC = 100 Adc, VCE = 10 Vdc, RS = 1.0 k, f = 1.0 kHz) MMBT2222A NF − 4.0 dB

SWITCHING CHARACTERISTICS (MMBT2222A only)

Delay Time

(

= 30 Vdc, V

BE(off)

= −0.5 Vdc, td− 10

Rise Time

(VCC

Vdc

VBE(

ff)

−0

Vdc

IC = 150 mAdc, IB1 = 15 mAdc) tr− 25 ns

Storage Time

(

= 30 Vdc, I

= 150 mAdc, ts− 225

Fall Time

(VCC

Vdc

150

mAdc

IB1 = IB2 = 15 mAdc) tf− 60 ns

3. Pulse Test: Pulse Width  300 s, Duty Cycle  2.0%.

4. fT is defined as the frequency at which |hfe| extrapolates to unity.

Figure 1. Turn−On Time Figure 2. Turn−Off Time

SWITCHING TIME EQUIVALENT TEST CIRCUITS

Scope rise time < 4 ns

*Total shunt capacitance of test jig, connectors, and oscilloscope.

+16 V

−2 V < 2 ns

1.0 to 100 s,

DUTY CYCLE ≈ 2.0%

1 k

+30 V

200

CS* < 10 pF

+16 V

−14 V

< 20 ns

1.0 to 100 s,

DUTY CYCLE ≈ 2.0%

1 k

+30 V

200

CS* < 10 pF

−4 V

1N914

MMBT2222LT1, MMBT2222ALT1

http://onsemi.com

1000

100

200

300

500

700

1.0 k0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 300 500 700

IC, COLLECTOR CURRENT (mA)

Figure 3. DC Current Gain

hFE, DC CURRENT GAINVCE, COLLECTOR−EMITTER VOLTAGE (VOLTS)

1.0

0.8

0.6

0.4

0.2

0.005 0.01 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50

IB, BASE CURRENT (mA)

Figure 4. Collector Saturation Region

TJ = 125°C

TJ = 25°C

25°C

−55°C

IC = 1.0 mA 10 mA 150 mA 500 mA

VCE = 1.0 V

VCE = 10 V

MMBT2222LT1, MMBT2222ALT1

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Figure 5. Turn−On Time

IC, COLLECTOR CURRENT (mA)

100

200

t, TIME (ns)

10 20 70

5.0

100

5.0 7.0 30 50 200

7.0

IC/IB = 10

TJ = 25°C

tr @ VCC = 30 V

td @ VEB(off) = 2.0 V

td @ VEB(off) = 0

3.0

2.0

300 500

500

t, TIME (ns)

5.0

7.0

100

200

300

Figure 6. Turn−Off Time

IC, COLLECTOR CURRENT (mA)

10 20 70 1005.0 7.0 30 50 200 300 500

VCC = 30 V

IC/IB = 10

IB1 = IB2

TJ = 25°C

t′s = ts − 1/8 tf

Figure 7. Frequency Effects

f, FREQUENCY (kHz)

4.0

6.0

8.0

2.0

0.1

Figure 8. Source Resistance Effects

RS, SOURCE RESISTANCE (OHMS)

NF, NOISE FIGURE (dB)

1.0 2.0 5.0 10 20 50

0.2 0.5

100

NF, NOISE FIGURE (dB)

0.01 0.02 0.05

RS = OPTIMUM

RS = SOURCE

RS = RESISTANCE

IC = 1.0 mA, RS = 150 

500 A, RS = 200 

100 A, RS = 2.0 k

50 A, RS = 4.0 k

f = 1.0 kHz

IC = 50 A

100 A

500 A

1.0 mA

4.0

6.0

8.0

2.0

50 100 200 500 1.0 k 2.0 k 5.0 k 10 k 20 k 50 k 100 k

Figure 9. Capacitances

REVERSE VOLTAGE (VOLTS)

3.0

5.0

7.0

2.0

0.1

CAPACITANCE (pF)

1.0 2.0 3.0 5.0 7.0 10 20 30 50

0.2 0.3 0.5 0.7

Ccb

Ceb

Figure 10. Current−Gain Bandwidth Product

IC, COLLECTOR CURRENT (mA)

100

200

300

500

fT, CURRENT−GAIN BANDWIDTH PRODUCT (MHz)

1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100

VCE = 20 V

TJ = 25°C

MMBT2222LT1, MMBT2222ALT1

http://onsemi.com

Figure 11. “On” Voltages

IC, COLLECTOR CURRENT (mA)

0.4

0.6

0.8

1.0

0.2

V, VOLTAGE (VOLTS)

TJ = 25°C

VBE(sat) @ IC/IB = 10

VCE(sat) @ IC/IB = 10

VBE(on) @ VCE = 10 V

Figure 12. Temperature Coefficients

IC, COLLECTOR CURRENT (mA)

−0.5

+0.5

COEFFICIENT (mV/ C)

−1.0

−1.5

−2.5

RVC for VCE(sat)

RVB for VBE

0.1 1.0 2.0 5.0 10 20 50

0.2 0.5 100 200 500 1.0 k

1.0 V

−2.0

0.1 1.0 2.0 5.0 10 20 500.2 0.5 100 200 500

MMBT2222LT1, MMBT2222ALT1

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PACKAGE DIMENSIONS

SOT−23 (TO−236AB)

CASE 318−08

ISSUE AH

DIM

MIN MAX MIN MAX

MILLIMETERS

0.1102 0.1197 2.80 3.04

INCHES

B0.0472 0.0551 1.20 1.40

C0.0350 0.0440 0.89 1.11

D0.0150 0.0200 0.37 0.50

G0.0701 0.0807 1.78 2.04

H0.0005 0.0040 0.013 0.100

J0.0034 0.0070 0.085 0.177

K0.0140 0.0285 0.35 0.69

L0.0350 0.0401 0.89 1.02

S0.0830 0.1039 2.10 2.64

V0.0177 0.0236 0.45 0.60

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

3. MAXIMUM LEAD THICKNESS INCLUDES LEAD

FINISH THICKNESS. MINIMUM LEAD THICKNESS

IS THE MINIMUM THICKNESS OF BASE

MATERIAL.

4. 318−03 AND −07 OBSOLETE, NEW STANDARD

318−08.

STYLE 6:

PIN 1. BASE

2. EMITTER

3. COLLECTOR

0.8

0.031

0.9

0.035

0.95

0.037

0.95

0.037

2.0

0.079

SOLDERING FOOTPRINT*

*For additional information on our Pb−Free strategy and soldering

details, please download the ON Semiconductor Soldering and

Mounting Techniques Reference Manual, SOLDERRM/D.

MMBT2222LT1, MMBT2222ALT1

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MMBT2222LT1/D

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