PJ2N5401
PNP Epitaxial Silicon Transistors
1-3 2002/01.rev.A
AMPLIFIER TRANSISTO R
Collector-Base Voltage: VCEO=120V
Collector Dissipation Pc=0.625W(Tc=25)
Characteristic Symbol Test Condition Min Typ Max Unit
Collector-Base Breakdown Voltage
Collector- Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Output Capacitance
Current Gain-Bandwidth product
Noise Figure
BVCBO
BVCEO
BVEBO
ICBO
IEBO
HEF1
HEF2
HEF3
VCE(SAT)
VBE(SAT)
Cob
f
T
NF
Ic=100μA,IE=0
Ic=1mA,IB=0
IE=10μA,IC=0
VCB=200V,IE=0
VEB=3V,Ic=0
VCE=10V,IC=1 mA
VCE=10V,IC=10mA
VCE=10V,IC=50mA
Ic=10 mA,IB=1 mA
Ic=50 mA,IB=5 mA
Ic=10 mA,IB=1 mA
Ic=50 mA,IB=5 mA
VCB=20V,IE=0, f=1MHz
VCE=5V,Ic=10mA
VCE=5V,IC=0.2 mA
Rs=1K,f=10KHz
130
120
5
30
40
40
100
100
50
0.2
0.5
1
1
6
400
8
V
V
V
nA
nA
V
V
V
V
PF
MHz
dB
Pulse Test: Pulse Width300μs, Duty Cycle2%.
Characteristic Symbol Rating Unit
Collector-base Voltage
Collector-Emitter
Voltage
Emitter-base Voltage
Collector Current (DC)
* Collector Dissipation
Junction Temperature
Storage T emperature
VCBO
VCEO
VEBO
IC
PC
TJ
Tstg
130
120
5
0.6
0.625
150
-55~150
V
V
V
A
W
Device Operating Temperature Package
PJ2N5401CT -20℃~+85 TO-92
TO-92
ABSOLUTE MAXIMUM RATINGS (T a = 25)
ELECTRICAL CH ARACTERISTICS (T a=25)
ORDERING INFORMATION
Pin : 1. Emitter
2. Base
3. Collector
PJ2N5401
PNP Epitaxial Silicon Transistors
2-3 2002/01.rev.A
DC CURRENT GAIN
CURRENT GAIN-BANDWIDTH PRODUCT
OUTPUT CAPACITANCE
BASE-EMITTER ON VOLTAGE
BASE-EMITTER SATURATION VOLTAGE
COLLECTOR-EMITTER SATURANION VOLTAGE
PJ2N5401
PNP Epitaxial Silicon Transistors
3-3 2002/01.rev.A