PJ2N5401 PNP Epitaxial Silicon Transistors AMPLIFIER TRANSISTO R TO-92 Collector-Base Voltage: VCEO=120V Collector Dissipation Pc=0.625W(Tc=25) * ABSOLUTE MAXIMUM RATINGS (Ta = 25) Characteristic Symbol Rating Collector-base Voltage VCBO 130 Collector-Emitter VCEO 120 Voltage VEBO 5 Emitter-base Voltage IC 0.6 Collector Current (DC) PC 0.625 * Collector Dissipation TJ 150 Tstg -55~150 Junction Temperature Unit V P in : 1. Emitter 2. Base 3. Collector V V A ORDERING INFORMATION W Device Package -20+85 TO-92 PJ2N5401CT Storage Temperature Operating Temperature ELECTRICAL CHARACTERISTICS (Ta=25) Characteristic Symbol Test Condition Min Typ Max Unit Collector-Base Breakdown Voltage BVCBO Ic=100A,IE =0 130 V Collector- Emitter Breakdown Voltage BVCEO Ic=1mA,IB=0 120 V Emitter-Base Breakdown Voltage BVEBO IE =10A,IC=0 5 V Collector Cutoff Current ICBO VCB=200V,IE =0 Emitter Cutoff Current IEBO VEB=3V,Ic=0 DC Current Gain HEF1 VCE =10V,IC=1 mA 30 HEF2 VCE =10V,IC=10mA 40 HEF3 VCE =10V,IC=50mA 40 VCE(SAT) Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Output Capacitance VBE(SAT) Cob 100 nA 50 nA Ic=10 mA,IB=1 mA 0.2 V Ic=50 mA,IB=5 mA 0.5 V Ic=10 mA,IB=1 mA 1 V Ic=50 mA,IB=5 mA 1 V VCB=20V,IE =0, f=1MHz 6 PF 400 MHz 8 dB Current Gain-Bandwidth product fT VCE =5V,Ic=10mA Noise Figure NF VCE =5V,IC=0.2 mA 100 Rs=1K,f=10KHz * Pulse Test: Pulse Width300s, Duty Cycle2%. 1-3 2002/01.rev.A PJ2N5401 PNP Epitaxial Silicon Transistors BASE-EMITTER ON VOLTAGE DC CURRENT GAIN BASE-EMITTER SATURATION VOLTAGE COLLECTOR-EMITTER SATURANION VOLTAGE CURRENT GAIN-BANDWIDTH PRODUCT OUTPUT CAPACITANCE 2-3 2002/01.rev.A PJ2N5401 PNP Epitaxial Silicon Transistors 3-3 2002/01.rev.A