CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper I.C. Handling Procedures.
Copyright © Harris Corporation 1995 8-6
SEMICONDUCTOR
SGT10S10,
SGT27S10
Gate Controlled Unidirectional Transient
Surge Suppressors
March 1995
MODIFIED TO-202
ANODE
CATHODE
GATE
ANODE
Features
• Blocking Voltage 100V and 270V
• Peak Transient Surge Current
300A
• Minimum Holding Current 100mA
• Subnanosecond Clamping Action
• Low On-State Voltage
• UL Recognized File # E135010 to
STD 497B
Applications
• Telecommunications Equipment
• Data and Voice Lines
• Computer Modems
• Alarm Systems
Description
SURGECTOR transient surge protectors are designed to
protect telecommunication equipment, data links, alarm sys-
tems, power supplies, and other sensitive electrical circuits
from damage that could be caused by switching transients,
lightning strikes, load changes, commutation spikes, and line
crosses.
These devices are fast turn-on, high holding current thyris-
tors. When coupled with a user supplied voltage level detec-
tor, they provide excellent voltage limiting even on very fast
rise time transients. The high holding current allows this
SURGECTOR to return to its high impedance off state after
a transient.
The SURGECTOR device’s normal off-state condition in the
forward blocking mode is a high impedance, low leakage
state that prevents loading of the line.
Absolute Maximum Ratings TC = +25oC
Equivalent Schematic Symbols
SURGECTORTM is a trademark of Harris Semiconductor.
SGT10S10 SGT27S10 UNITS
Continuous Off State Voltage:
VDM. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
VRM. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100
1270
1V
V
Transient Peak Surge Current:. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ITSM
1µs x 2µs (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
8µs x 20µs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
10µs x 560µs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
10µs x 1000µs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
One Half Cycle, 1 every 30s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50Hz to 60Hz
One Second, Halfwave. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50Hz to 60Hz
300
200
125
100
60
30
300
200
125
100
60
30
A
A
A
A
A
A
Operating Temperature (TA). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -40oC to +85oCoC
Storage Temperature Range (TSTG) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -40oC to +150oCoC
NOTE: 1. Unit designed not to fail open below 450A.
A
K
A
K
G
+
G
+A
G
+
K- --
File Number 1691.1
8-7
Specifications SGT10S10, SGT27S10
Electrical Specifications At Case Temperature, TC = +25oC, Unless Otherwise Specified
PARAMETER SYMBOL TEST
CONDITIONS
SGT10S10 SGT27S10
UNITSMIN TYP MAX MIN TYP MAX
Off-State Current IDM VDM = 100V
TA = +25oC
TA = +85oC-
--
-50
10 -
--
--
-nA
µA
IDM VDM = 270V
TA = +25oC
TA = +85oC-
--
--
--
--
-100
50 nA
µA
Off-State Current IRM VRM = 1V
TA = +25oC
TA = +85oC-
--
-1
10 -
--
-1
10 mA
mA
Breakover Voltage VBO dv/dt = 100V/µs
(Note 1) - - 100 - - 285 V
Holding Current IH100 - - 100 - - mA
On-State Voltage VTIT = 10A - - 2 - - 2 V
Gate-Trigger Current IGT - - 150 - - 150 mA
Main Terminal
Capacitance COVDM = 0V
VDM = 50V at 1MHz -
-90
--
--
--
50 -
-pF
pF
NOTE:
1. External zener diode from anode to gate: 60V (SGT10S10); 270V (SGT27S10).
Performance Curves
FIGURE 1. TYPICAL VOLT-AMPERE CHARACTERISTICS FIGURE 2. NORMALIZED GATE-TRIGGER CURRENT vs
TEMPERATURE
VDM
V
IDM
VBO
VZ
mA
IH
IT
AVT
VD = 30V
NORMALIZED GATE TRIGGER CURRENT (mA)
AMBIENT TEMPERATURE (oC)
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6-40 -30 -20 -10 0 10 20 30 40 50 60 70 80 90
8-8
SGT10S10, SGT27S10
FIGURE 3. NORMALIZED HOLDING CURRENT vs
TEMPERATURE FIGURE 4. NORMALIZED VBO vs dv/dt
Performance Curves
(Continued)
IT (INITIAL) = 2A
NORMALIZED HOLDING CURRENT (mA)
AMBIENT TEMPERATURE (oC)
1.5
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6-40 -30 -20 -10 0 10 20 30 40 50 60 70 80 90
EXTERNAL ZENER DIODE FROM ANODE TO GATE
60V (SGT10S10); 270V (SGT27S10)
1.50
1.25
1.00
0.75
0.50 10 100 1,000 10,000
RATE OF RISE OF VOLTAGE (V/µs)
NORMALIZED HOLDING CURRENT (mA)
Terms and Symbols
VDM (Maximum Off-State Voltage) - Maximum off-state volt-
age (DC or peak) which may be applied continuously.
VRM (Maximum Reverse Voltage) - Maximum reverse-block-
ing voltage (DC or peak) which may be applied.
ITSM (Maximum Peak Surge Current) - Maximum nonrepeti-
tive current which may be allowed to flow for the time state.
TA (Ambient Operating Temperature) - Ambient temperature
range permitted during operation in a circuit.
TSTG (Storage Temperature) - Temperature range permitted
during storage.
IDM (Off-State Current) - Maximum value of off-state current
that results from the application of the maximum off-state
voltage (VDM).
IRM (Reverse Current) - Maximum value of reverse current
that results from the application of the maximum reverse
voltage (VRM).
IH (Holding Current) - Minimum on-state current that will hold
the device in the on-state after it has been latched on.
VT (On-State Voltage) - Voltage across the main terminals
for a specified on-state current.
IGT (Gate-Trigger Current) - Minimum gate current which will
cause the device to switch from the off-state to the on-state.
CO (Main Terminal Capacitance) - Capacitance between the
main terminals at a specified off-state voltage.
8-9
SGT10S10, SGT27S10
TO-202 Modified
3 LEAD JEDEC STYLE TO-202 SHORT TAB PLASTIC PACKAGE
SYMBOL
INCHES MILLIMETERS
NOTESMIN MAX MIN MAX
A 0.130 0.150 3.31 3.81 -
b 0.024 0.028 0.61 0.71 2, 3
b10.045 0.055 1.15 1.39 1, 2, 3
b20.270 0.280 6.86 7.11 -
c 0.018 0.022 0.46 0.55 1, 2, 3
D 0.320 0.340 8.13 8.63 -
E 0.340 0.360 8.64 9.14 -
e 0.100 TYP 2.54 TYP 4
e10.200 BSC 5.08 BSC 4
H10.080 0.100 2.04 2.54 -
J10.039 0.049 1.00 1.24 5
L 0.410 0.440 10.42 11.17 -
L10.080 0.100 2.04 2.54 1
NOTES:
1. Lead dimension and finish uncontrolled in L1.
2. Lead dimension (without solder).
3. Add typically 0.002 inches (0.05mm) for solder coating.
4. Position of lead to be measured 0.250 inches (6.35mm) from bottom
of dimension D.
5. Position of lead to be measured 0.100 inches (2.54mm) from bottom
of dimension D.
6. Controlling dimension: Inch.
7. Revision 3 dated 10-94.
Packaging
L
D
L1
H1
b2
b
b1
E
e
e1
c
J1
A
45o
123
ACTIVE ELEMENT
