1N4148WS-G www.vishay.com Vishay Semiconductors Small Signal Fast Switching Diode FEATURES * Silicon epitaxial planar diode * Fast switching diodes * AEC-Q101 qualified available * Base P/N-HG3 - green, AEC-Q101 qualfied * Base P/N-G3 - green, commercial grade * Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 MARKING (example only) XY MECHANICAL DATA Case: SOD-323 22610 Weight: approx. 4 mg Bar = cathode marking XY = type code Packaging codes / options: 18/10K per 13" reel (8 mm tape), 10K/box DESIGN SUPPORT TOOLS click logo to get started 08/3K per 7" reel (8 mm tape), 15K/box Models Available PARTS TABLE PART ORDERING CODE 1N4148WS-G 1N4148WS-HG CIRCUIT CONFIGURATION TYPE MARKING REMARKS Single AH Tape and reel 1N4148WS-G3-08 or 1N4148WS-G3-18 1N4148WS-HG3-08 or 1N4148WS-HG3-18 ABSOLUTE MAXIMUM RATINGS (Tamb = 25 C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL VALUE VR 75 VRRM 100 f 50 Hz IF(AV) 150 t < 1 s and Tj = 25 C IFSM 350 Ptot 200 mW SYMBOL VALUE UNIT RthJA 650 K/W Tj 150 C Storage temperature range Tstg -65 to +150 C Operating temperature range Top -55 to +150 C Reverse voltage Repetitive peak reverse voltage Average rectified current half wave rectification with resistive load (1) Surge forward current Power dissipation (1) UNIT V mA Note (1) Valid provided that electrodes are kept at ambient temperature. THERMAL CHARACTERISTICS (Tamb = 25 C, unless otherwise specified) PARAMETER TEST CONDITION Thermal resistance junction to ambient air (1) Junction temperature Note (1) Valid provided that electrodes are kept at ambient temperature Rev. 1.4, 31-Jan-18 Document Number: 85413 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 1N4148WS-G www.vishay.com Vishay Semiconductors ELECTRICAL CHARACTERISTICS (Tamb = 25 C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL MAX. UNIT IF = 10 mA VF 1 V IF = 100 mA VF 1.2 V VR = 20 V IR 25 nA Forward voltage VR = 75 V IR 5 IR 100 VR = 20 V, Tj = 150 C IR 50 Diode capacitance Reverse recovery time TYP. VR = 100 V Leakage current Voltage rise when switching ON MIN. A VF = VR = 0 V CD 4 pF Tested with 50 mA pulses, tp = 0.1 s, rise time < 30 ns, fp = (5 to 100) kHz Vfr 2.5 V IF = 10 mA, iR = 1 mA, VR = 6 V, RL = 100 trr 4 ns TYPICAL CHARACTERISTICS (Tamb = 25 C, unless otherwise specified) 250 Ptot - Power Dissipation (mW) 103 102 Tj = 100 C Tj = 25 C IF (mA) 10 1 10-1 200 150 100 50 10-2 0 1 0 Fig. 1 - Forward Characteristics 50 100 150 200 Tamb - Ambient Temperature (C) 20324 VF (V) 17437 0 2 Fig. 3 - Admissible Power Dissipation vs. Ambient Temperature 104 Tj = 25 C 5 2 10 f = 1 MHz 3 1.0 CD (VR) 2 102 5 CD (0 V) 5 Rf () Tj = 25 C 1.1 f = 1 kHz 2 0.9 0.8 10 5 0.7 2 10-2 17438 10-1 1 10 102 IF (mA) Fig. 2 - Dynamic Forward Resistance vs. Forward Current 0 17440 2 4 6 8 10 VR (V) Fig. 4 - Relative Capacitance vs. Reverse Voltage Rev. 1.4, 31-Jan-18 Document Number: 85413 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 1N4148WS-G www.vishay.com Vishay Semiconductors 104 5 2 103 IR (nA) 5 2 102 5 2 10 5 VR = 20 V 2 1 100 0 17441 200 Tj (C) Fig. 5 - Leakage Current vs. Junction Temperature 100 5 4 3 2 I IFRM (A) 1 T = 1/fP IFRM 10 5 4 3 2 n = tP/T tP n=0 t T 0.1 0.2 0.5 5 4 3 2 0.1 10-5 17442 2 5 10-4 2 5 10-3 2 5 10-2 2 5 10-1 2 5 1 2 5 10 tP (s) Fig. 6 - Admissible Repetitive Peak Forward Current vs. Pulse Duration Rev. 1.4, 31-Jan-18 Document Number: 85413 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 1N4148WS-G www.vishay.com Vishay Semiconductors 0.1 [0.004] max. 0.15 [0.006] 0.10 [0.004] 0.2 [0.008] 0.8 [0.031] 1.15 [0.045] PACKAGE DIMENSIONS in millimeters (inches): SOD-323 0 - 8 0.40 [0.016] 0.25 [0.010] 1.95 [0.077] 2.50 [0.098] 1.1 [0.043] 0.20 [0.008] 0.40 [0.016] 2.85 [0.112] 1.5 [0.059] 1.60 [0.063] Cathode bar Footprint recommendation: 1.6 [0.063] Document no.: S8-V-3910.02-001 (4) Created - Date: 24.August.2004 Rev. 6 - Date: 23.Sept.2016 17443 0.8 [0.031] 0.6 [0.024] 0.8 [0.031] Rev. 1.4, 31-Jan-18 Document Number: 85413 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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