PD - 96217A PDP TRENCH IGBT IRG6S330UPbF Features l Advanced Trench IGBT Technology l Optimized for Sustain and Energy Recovery circuits in PDP applications TM) l Low VCE(on) and Energy per Pulse (E PULSE for improved panel efficiency l High repetitive peak current capability l Lead Free package Key Parameters VCE min VCE(ON) typ. @ IC = 70A IRP max @ TC= 25C TJ max 330 1.80 250 150 V V A C C G G E D2Pak E IRG6S330UPbF n-channel G Gate C C Collector E Emitter Description This IGBT is specifically designed for applications in Plasma Display Panels. This device utilizes advanced trench IGBT technology to achieve low VCE(on) and low EPULSETM rating per silicon area which improve panel efficiency. Additional features are 150C operating junction temperature and high repetitive peak current capability. These features combine to make this IGBT a highly efficient, robust and reliable device for PDP applications. Absolute Maximum Ratings Parameter Max. Units 30 V A VGE IC @ TC = 25C Gate-to-Emitter Voltage Continuous Collector Current, VGE @ 15V IC @ TC = 100C IRP @ TC = 25C Continuous Collector, VGE @ 15V 70 40 Repetitive Peak Current Power Dissipation 250 160 PD @TC = 25C PD @TC = 100C TJ TSTG c W 63 1.3 Power Dissipation Linear Derating Factor W/C -40 to + 150 Operating Junction and Storage Temperature Range C 300 Soldering Temperature for 10 seconds Thermal Resistance Parameter RJC www.irf.com Junction-to-Case d Typ. Max. Units --- 0.8 C/W 1 09/11/09 IRG6S330UPbF Electrical Characteristics @ TJ = 25C (unless otherwise specified) Parameter BVCES V(BR)ECS VCES/TJ VCE(on) Collector-to-Emitter Breakdown Voltage Emitter-to-Collector Breakdown Voltage Breakdown Voltage Temp. Coefficient e --- --- 0.29 --- --- --- --- --- 1.25 1.43 --- --- --- 1.80 2.38 2.10 --- 2.10 --- --- 5.0 --- mV/C VCE = 330V, VGE = 0V 20 VCE = 330V, VGE = 0V, TJ = 100C --- A VCE = 330V, VGE = 0V, TJ = 125C 200 VCE = 330V, VGE = 0V, TJ = 150C --- Static Collector-to-Emitter Voltage VGE(th) Gate Threshold Voltage VGE(th)/TJ ICES Gate Threshold Voltage Coefficient Collector-to-Emitter Leakage Current --- --- -12 2.0 --- --- 10 40 Gate-to-Emitter Forward Leakage --- --- 150 --- 100 Gate-to-Emitter Reverse Leakage Forward Transconductance --- --- --- 94 -100 --- Total Gate Charge Gate-to-Collector Charge --- --- 86 36 --- --- Turn-On delay time Rise time --- --- 39 32 --- --- Turn-Off delay time Fall time --- --- 120 55 --- --- Turn-On delay time Rise time --- --- 37 33 --- --- Turn-Off delay time Fall time --- --- 159 95 --- --- Shoot Through Blocking Time 100 --- --- --- 943 --- --- 1086 --- Input Capacitance Output Capacitance Reverse Transfer Capacitance --- --- --- 75 --- Internal Collector Inductance --- 4.5 --- gfe Qg Qgc td(on) tr td(off) tf td(on) tr td(off) tf tst EPULSE ESD Energy per Pulse Human Body Model Machine Model Cies Coes Cres LC V VGE = 0V, ICE = 1 mA V VGE = 0V, ICE = 1 A V/C Reference to 25C, ICE = 1mA VGE = 15V, ICE = 25A 330 30 --- --- 2.6 IGES V Internal Emitter Inductance --- e e e = 120A e VGE = 15V, ICE = 40A VGE = 15V, ICE = 70A VGE = 15V, ICE VGE = 15V, ICE = 70A, TJ = 150C V VCE = VGE, ICE = 500A nA VGE = 30V VGE = -30V S VCE = 25V, ICE = 25A VCE = 200V, IC = 25A, VGE = 15V nC e e IC = 25A, VCC = 196V ns RG = 10, L=200H, LS= 150nH TJ = 25C IC = 25A, VCC = 196V ns RG = 10, L=200H, LS= 150nH TJ = 150C ns VCC = 240V, VGE = 15V, RG= 5.1 L = 220nH, C= 0.40F, VGE = 15V J VCC = 240V, RG= 5.1, TJ = 25C L = 220nH, C= 0.40F, VGE = 15V VCC = 240V, RG= 5.1, TJ = 100C Class 2 (Per JEDEC standard JESD22-A114) Class B (Per EIA/JEDEC standard EIA/JESD22-A115) VGE = 0V 2275 --- 108 --- pF VCE = 30V = 1.0MHz, nH LE Conditions Min. Typ. Max. Units 7.5 --- See Fig.13 Between lead, 6mm (0.25in.) from package and center of die contact Notes: Half sine wave with duty cycle = 0.05, ton=2sec. R is measured at TJ of approximately 90C. Pulse width 400s; duty cycle 2%. 2 www.irf.com IRG6S330UPbF 500 500 VGE = 18V VGE = 15V VGE = 12V VGE = 10V VGE = 8.0V VGE = 6.0V 300 400 300 ICE (A) ICE (A) 400 VGE = 18V VGE = 15V VGE = 12V VGE = 10V VGE = 8.0V VGE = 6.0V 200 200 100 100 0 0 0 2 4 6 8 10 0 2 4 VCE (V) 10 Fig 2. Typical Output Characteristics @ 75C 500 500 VGE = 18V VGE = 15V VGE = 12V VGE = 10V VGE = 8.0V VGE = 6.0V 400 300 VGE = 18V VGE = 15V VGE = 12V VGE = 10V VGE = 8.0V VGE = 6.0V 400 ICE (A) ICE (A) 8 VCE (V) Fig 1. Typical Output Characteristics @ 25C 200 100 300 200 100 0 0 0 2 4 6 8 10 0 2 4 VCE (V) 500 8 10 Fig 4. Typical Output Characteristics @ 150C 25 IC = 25A T J = 25C 400 6 VCE (V) Fig 3. Typical Output Characteristics @ 125C 20 TJ = 150C 300 VCE (V) ICE (A) 6 200 100 15 TJ = 25C TJ = 150C 10 5 0 0 0 2 4 6 8 10 12 14 16 VGE (V) Fig 5. Typical Transfer Characteristics www.irf.com 18 5 10 15 20 VGE (V) Fig 6. VCE(ON) vs. Gate Voltage 3 IRG6S330UPbF 80 300 Repetitive Peak Current (A) IC, Collector Current (A) 70 60 50 40 30 20 200 100 ton= 2s Duty cycle = 0.1 Half Sine Wave 10 0 0 0 25 50 75 100 125 25 150 T C, Case Temperature (C) Fig 7. Maximum Collector Current vs. Case Temperature 75 100 125 150 Case Temperature (C) Fig 8. Typical Repetitive Peak Current vs. Case Temperature 1100 1100 V CC = 240V L = 220nH C = variable 1000 950 900 850 L = 220nH C = 0.4F 1000 100C Energy per Pulse (J) 1050 Energy per Pulse (J) 50 25C 800 750 700 100C 900 800 25C 700 600 650 500 600 150 160 170 180 190 200 210 220 230 195 200 205 210 215 220 225 230 235 240 IC, Peak Collector Current (A) VCC, Collector-to-Supply Voltage (V) Fig 9. Typical EPULSE vs. Collector Current 1400 1000 V CC = 240V C= 0.4F L = 220nH t = 1s half sine 1200 100 1000 C= 0.3F 800 C= 0.2F 10 s IC (A) Energy per Pulse (J) Fig 10. Typical EPULSE vs. Collector-to-Supply Voltage 100 s 10 600 1ms 400 1 200 25 50 75 100 125 TJ, Temperature (C) Fig 11. EPULSE vs. Temperature 4 150 1 10 100 1000 V CE (V) Fig 12. Forrward Bias Safe Operating Area www.irf.com IRG6S330UPbF 100000 VGE, Gate-to-Emitter Voltage (V) C oes = C ce + Cgc 10000 Capacitance (pF) 16 VGS = 0V, f = 1 MHZ C ies = C ge + C gd, C ce SHORTED C res = C gc Cies 1000 Coes 100 IC = 25A 14 12 V CES = 240V V CES = 150V 10 V CES = 60V 8 6 4 2 Cres 0 10 0 50 100 150 0 200 20 VCE, Collector-toEmitter-Voltage(V) Fig 13. Typical Capacitance vs. Collector-to-Emitter Voltage 40 60 80 100 Q G, Total Gate Charge (nC) Fig 14. Typical Gate Charge vs. Gate-to-Emitter Voltage 1 Thermal Response ( ZthJC ) D = 0.50 0.20 0.1 0.10 0.05 J 0.02 0.01 0.01 R1 R1 J 1 R2 R2 R3 R3 Ri (C/W) C 1 2 2 Ci= i/Ri Ci= i/Ri SINGLE PULSE ( THERMAL RESPONSE ) 3 3 (sec) 0.084697 0.000038 0.374206 0.001255 0.341867 0.013676 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 0.001 1E-006 1E-005 0.0001 0.001 0.01 0.1 1 t1 , Rectangular Pulse Duration (sec) Fig 15. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com 5 IRG6S330UPbF A RG C DRIVER PULSE A L VCC B RG PULSE B Ipulse DUT tST Fig 16b. tst Test Waveforms Fig 16a. tst and EPULSE Test Circuit VCE Energy L IC Current VCC DUT 0 1K Fig 16c. EPULSE Test Waveforms 6 Fig. 17 - Gate Charge Circuit (turn-off) www.irf.com IRG6S330UPbF D2Pak (TO-263AB) Package Outline Dimensions are shown in millimeters (inches) D2Pak (TO-263AB) Part Marking Information 7+,6,6$1,5)6:,7+ /27&2'( $66(0%/('21:: ,17+($66(0%/</,1(/ ,17(51$7,21$/ 5(&7,),(5 /2*2 3$57180%(5 )6 '$7(&2'( <($5 :((. /,1(/ $66(0%/< /27&2'( 25 ,17(51$7,21$/ 5(&7,),(5 /2*2 $66(0%/< /27&2'( 3$57180%(5 )6 '$7(&2'( 3 '(6,*1$7(6/($')5(( 352'8&7 237,21$/ <($5 :((. $ $66(0%/<6,7(&2'( Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ www.irf.com 7 IRG6S330UPbF D2Pak (TO-263AB) Tape & Reel Information Dimensions are shown in millimeters (inches) TRR 1.60 (.063) 1.50 (.059) 4.10 (.161) 3.90 (.153) FEED DIRECTION 1.85 (.073) 1.65 (.065) 1.60 (.063) 1.50 (.059) 11.60 (.457) 11.40 (.449) 0.368 (.0145) 0.342 (.0135) 15.42 (.609) 15.22 (.601) 24.30 (.957) 23.90 (.941) TRL 10.90 (.429) 10.70 (.421) 1.75 (.069) 1.25 (.049) 4.72 (.136) 4.52 (.178) 16.10 (.634) 15.90 (.626) FEED DIRECTION 13.50 (.532) 12.80 (.504) 27.40 (1.079) 23.90 (.941) 4 330.00 (14.173) MAX. NOTES : 1. COMFORMS TO EIA-418. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION MEASURED @ HUB. 4. INCLUDES FLANGE DISTORTION @ OUTER EDGE. 60.00 (2.362) MIN. 26.40 (1.039) 24.40 (.961) 3 30.40 (1.197) MAX. 4 Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ Data and specifications subject to change without notice. This product has been designed for the Industrial market. Qualification Standards can be found on IR's Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.09/2009 8 www.irf.com