
1
3
2
DEVICE MARKING
LBAT54SWT1G= B8
MAXIMUM RATINGS (T J= 125°C unless otherwise noted)
Rating Symbol Value Unit
Reverse Voltage V R30 Volts
Forward Power Dissipation P F
@ T A= 25°C 200 mW
Derate above 25°C 1.6 mW/°C
Forward Current(DC) IF200Max mA
Junction Temperature T J125Max °C
Storage Temperature Range T stg –55 to +150 °C
ELECTRICAL CHARACTERISTICS (T A= 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
Reverse Breakdown Voltage (I R= 10 µA) V(BR)R 30 — — Volts
Total Capacitance (V R= 1.0 V, f = 1.0 MHz) CT— 7.6 10 pF
Reverse Leakage (V R= 25 V) IR— 0.5 2.0 µAdc
Forward Voltage (I F= 0.1 mAdc) VF— 0.22 0.24 Vdc
Forward Voltage (I F= 30 mAdc) VF— 0.41 0.5 Vdc
Forward Voltage (I F= 100 mAdc) VF— 0.52 1.0 Vdc
Reverse Recovery T ime
(I F= I R= 10 mAdc, I R(REC) = 1.0 mAdc, Figure 1) trr — — 5.0 ns
Forward Voltage (I F= 1.0 mAdc) VF— 0.29 0.32 Vdc
Forward Voltage (I F= 10 mAdc) VF— 0.35 0.40 Vdc
Forward Current (DC) IF— — 200 mAdc
Repetitive Peak Forward Current IFRM — — 300 mAdc
Non–Repetitive Peak Forward Current (t < 1.0 s) IFSM — — 600 mAdc
LBAT54SWT1G
SOT–323 (SC–70)
These Schottky barrier diodes are designed for high speed switching
applications, circuit protection, and voltage clamping. Extremely low forward
voltage reduces conduction loss. Miniature surface mount package is excel-
lent for hand held and portable applications where space is limited.
• Extremely Fast Switching Speed
• Low Forward Voltage — 0.35 Volts (T yp) @ I F= 10 mAdc
ORDERING INFORMATION
Device Marking Shipping
LBAT54SWT1G B8 3000/Tape & Reel 3
CATHODE/ANODE
ANODE
1CATHODE
2
Dual Series Schottky
Barrier Diodes
LESHAN RADIO COMPANY, LTD.
1/3
LBAT54SWT3G B8 10000/Tape & Reel
We declare that the material of product
compliance with RoHS requirements.