DSS2x81-0045B
Schottky Diode
Symbol Definition
R a t i n g s
Features / Advantages:
typ. max.
I
FSM
I
R
A
V
800
IA
V
F
0.65
R0.80 K/W
V
R
=
min.
80
t = 10 ms
Applications:
V
RRM
V
45
60
T
VJ
V°C=
T
VJ
°C=mA
250
Package:
Part number
V
R
=
T
VJ
=°C
I
F
=A
V
T
C
=85°C
d =
P
tot
150 WT
C
°C=
T
VJ
150 °C
-40
V
I
RRM
=
=45
80
80
T
VJ
=45°C
DSS2x81-0045B
V
A
45
V45
25
25
25
max. repe titiv e re verse vo l t a g e
reverse current
forward voltage
virt ua l j un ctio n temp e r ature
total power dissipation
max. forward surge current
Conditions Unit
0.96
T
VJ
°C=25
C
J
j
unction capacitance V= V;5T
100
V
F0
V
0.30
T
VJ
=150°C
r
F
4Ω
f = 1 MHz = °C25
m
V
0.63
T
VJ
=°C
I
F
=A
V
80
0.96
I
F
=A160
I
F
=A160
2x
threshold voltage
slope resistance for power loss calculation only
Backside: isolated
(50 Hz), sine
V
F
=0.63
V
● Housing:
High Performance Schottky Diode
Low Loss and Soft Recovery
Parallel legs
SOT-227B (minibloc)
●
rIndustry standard outline
●
rCu base plate internal DCB isolated
●
rIsolation Voltage 3000 V
●
rEpoxy meets UL 94V-0
●
rRoHS compliant
RVJ
mA
2.93 nF
thermal resistance junction to case
thJC
rectangular 0.5
● Very low Vf
● Extremely low switching losses
● low Irm values
● Improved thermal behaviour
● High reliability circuit operation
● Low voltage peaks for reduced
protection circuits
● Low noise switching
● Rectifiers in switch mode power
supplies (SMPS)
● Free wheeling diode in low voltage
converters
FAV
average forward current
FAV
125
IXYS reserves the right to change limits, conditions and dimensions. 20110603a
Data according to IEC 60747and per diode unless otherwise specified
© 2011 IXYS all rights reserved
DSS2x81-0045B
I
RMS
A
per terminal 100
R
thCH
K/W0.10
M
D
Nm1.5
mounting torque 1.1
T
stg
°C150
storage temperature -40
Weight g30
Symbol Definition Ratings
typ. max.min.Conditions
RMS current
thermal resistance case to heatsink
Unit
Ordering Delivering Mode Base Qty Code Key
Standard Part Name
DSS2x81-0045B 470422Tube 10
abcde
YYWWZ XXXXXX
Product Marking
Logo Part No.
DateCode Assembly Code
Assembly Line
1
)
Ma r king on Pr o d uc t
DSS2x81-0045B
M
T
Nm1.5
terminal torque 1.1
V
ISOL
V3000t = 1 second
V2500t = 1 minute
isolation voltage
dmm
mmd
10.5 3.2
8.6 6.8
Spp/App
creepage | striking distance on surface | through air terminal to terminal
Spb/Apb
creepage | striking distance on surface | through air terminal to backside
IXYS reserves the right to change limits, conditions and dimensions. 20110603a
Data according to IEC 60747and per diode unless otherwise specified
© 2011 IXYS all rights reserved
DSS2x81-0045B
Outlines SOT-227B (minibloc)
IXYS reserves the right to change limits, conditions and dimensions. 20110603a
Data according to IEC 60747and per diode unless otherwise specified
© 2011 IXYS all rights reserved
DSS2x81-0045B
0.0 0.2 0.4 0.6 0.8
1
10
100
01020304050
0.1
1
10
100
1000
10000
020406080100
0
10
20
30
40
50
60
70
80
0.001 0.01 0.1 1 10
0.1
1
04080120160
0
20
40
60
80
100
120
010203040
100
1000
10000
Single Pulse
0.05
DSS2x81-0045B
T
VJ
=150°C
125°C
100°C
75°C
25°C
T
VJ
=
150°C
125°C
25°C
T
VJ
= 25°C
d=
DC
0.5
0.33
0.25
0.17
0.08
0.08
D=0.5
0.25
0.17
DC
50°C
0.33
I
F
[A]
V
F
[V]
I
R
[mA]
V
R
[V] V
R
[V]
C
T
[pF]
T
C
[°C] I
F(AV)
[A]
P
(AV)
[W]
Z
thJC
[K/W]
t[s]
Note: All curves are per diode
Fig. 1 Maximum forward voltage
drop characteristics
Fig. 2 Typ. reverse current
I
R
vs. reverse voltage V
R
Fig. 3 Typ. junction capacitance
C
T
vs. reverse voltage V
R
Fig. 4 Average forward current
I
F(AV)
vs. case temp. T
C
Fig. 5 Forward power loss
characteristics
Fig. 6 Transient thermal impedance junction to case at various duty cycles
I
F(AV)
[A]
d = 0.5
IXYS reserves the right to change limits, conditions and dimensions. 20110603a
Data according to IEC 60747and per diode unless otherwise specified
© 2011 IXYS all rights reserved
