DSS2x81-0045B V RRM = 45 V I FAV = 2x 80 A V F = 0.63 V Schottky Diode High Performance Schottky Diode Low Loss and Soft Recovery Parallel legs Part number DSS2x81-0045B Backside: isolated Features / Advantages: Applications: Package: Very low Vf Extremely low switching losses low Irm values Improved thermal behaviour High reliability circuit operation Low voltage peaks for reduced protection circuits Low noise switching Rectifiers in switch mode power supplies (SMPS) Free wheeling diode in low voltage converters Housing: SOT-227B (minibloc) rIndustry standard outline rCu base plate internal DCB isolated rIsolation Voltage 3000 V rEpoxy meets UL 94V-0 rRoHS compliant Symbol Definition Conditions VRRM max. repetitive reverse voltage IR reverse current Ratings VF forward voltage min. typ. 45 V 60 mA VR = 45 V TVJ = 100 C 250 mA IF = 80 A TVJ = 25 C 0.65 V 0.96 V 0.63 V 0.96 V TC = 85C 80 A TVJ = 150C 0.30 V TVJ = 125 C 80 A I F = 160 A average forward current threshold voltage rF slope resistance R thJC thermal resistance junction to case T VJ virtual junction temperature V VR = IF = I FAV 45 TVJ = 25 C TVJ = 25 C I F = 160 A VF0 Unit max. rectangular d = 0.5 for power loss calculation only -40 4 m 0.80 K/W 150 C Ptot total power dissipation TC = 25 C 150 W I FSM max. forward surge current t = 10 ms (50 Hz), sine TVJ = 45C 800 A CJ junction capacitance VR = TVJ = 25 C IXYS reserves the right to change limits, conditions and dimensions. (c) 2011 IXYS all rights reserved 5 V; f = 1 MHz Data according to IEC 60747and per diode unless otherwise specified 2.93 nF 20110603a DSS2x81-0045B Ratings Symbol Definition min. Conditions I RMS RMS current R thCH thermal resistance case to heatsink Tstg storage temperature per terminal typ. 1) max. Unit 100 0.10 -40 Weight A K/W 150 30 C g MD mounting torque 1.1 1.5 Nm MT terminal torque 1.1 1.5 Nm V ISOL isolation voltage d Spp/App creepage | striking distance on surface | through air terminal to terminal d Spb/Apb creepage | striking distance on surface | through air terminal to backside t = 1 second 3000 t = 1 minute V 2500 V 10.5 3.2 mm 8.6 6.8 mm Product Marking abcde Logo YYWW Z Part No. XXXXXX Assembly Code DateCode Assembly Line Ordering Standard Part Name DSS2x81-0045B IXYS reserves the right to change limits, conditions and dimensions. (c) 2011 IXYS all rights reserved Marking on Product DSS2x81-0045B Delivering Mode Tube Base Qty Code Key 10 470422 Data according to IEC 60747and per diode unless otherwise specified 20110603a DSS2x81-0045B Outlines SOT-227B (minibloc) IXYS reserves the right to change limits, conditions and dimensions. (c) 2011 IXYS all rights reserved Data according to IEC 60747and per diode unless otherwise specified 20110603a DSS2x81-0045B 100 10000 10000 1000 TVJ=150C 125C 100 IF IR 10 TVJ = 150C 125C 25C [A] [mA] CT 100C 1000 [pF] 10 75C 1 50C 25C 1 0.0 0.1 0.2 0.4 0.6 0.8 TVJ = 25C 100 0 10 20 30 40 50 0 10 VR [V] VF [V] Fig. 2 Typ. reverse current IR vs. reverse voltage VR Fig. 1 Maximum forward voltage drop characteristics 20 30 40 VR [V] Fig. 3 Typ. junction capacitance CT vs. reverse voltage VR 80 120 70 100 60 80 50 IF(AV) P(AV) DC 60 d= DC 0.5 0.33 0.25 0.17 0.08 40 d = 0.5 [A] [W] 30 40 20 20 10 0 0 0 40 80 120 0 160 20 40 60 80 100 IF(AV) [A] TC [C] Fig. 5 Forward power loss characteristics Fig. 4 Average forward current IF(AV) vs. case temp. TC 1 D=0.5 ZthJC [K/W] 0.33 0.25 0.17 Single Pulse 0.08 0.1 0.05 0.001 Note: All curves are per diode DSS2x81-0045B 0.01 0.1 1 10 t [s] Fig. 6 Transient thermal impedance junction to case at various duty cycles IXYS reserves the right to change limits, conditions and dimensions. (c) 2011 IXYS all rights reserved Data according to IEC 60747and per diode unless otherwise specified 20110603a