PDJ-M100GR12A-0 Hitachi IGBT Module / Silicon N-Channel IGBT MBM100GR12A [ 100A/1200V, 2in1 ] * * * (USFD) * * (-) Unit in mm 2- 5.6 92 80 20 4-Fast-on Terminal #110 18.5 C2E1 G2 E2 23 40 0.8 C1 E2 6 30 E1 G1 35 7 12 C2E1 3-M5 C1 E2 23 G1 E1 17 25 35 45 E2 G2 19 230g (TC=25C) DC 1ms DC 1ms *1 : RMS 30 Arms *2, *3 : 1.67 N*m VCES VGES IC ICP IF IFM PC Tj Tstg Viso V V - N*m A 1200 20 100 200 *1 A W C C VRMS 100 200 690 -40 ~ +150 -40 ~ +125 2500(AC 1 minute) *2 1.96 *3 1.96 (TC=25C) Min. Typ. Max. mA 1.0 VCE=1200V, VGE=0V ICES IGES nA 500 VGE=20V, VCE=0V VCE(sat) V 2.2 2.8 IC=100A, VGE=15V VGE(TO) V 10 VCE=5V, IC=100mA Cies pF 9000 VCE=10V, VGE=0V, f=1MHz tr 0.15 0.3 VCC=600VIC=100A *4 ton 0.3 0.6 RG=12 s tf 0.1 0.3 VGE=15V Inductive Load 0.5 1.0 toff IF=100A trr 0.2 0.4 s VFM V 2.5 3.5 IF=100A, VGE=0V IGBT Rth(j-c) 0.18 - C/W Rth(j-c) 0.4 *4 : RG RG http://store.iiic.cc/ VGE=15V14V13V12V 200 VGE=15V14V13V12V TYPICAL 200 Tc=125C 11V 150 Pc=690W 100 10V 50 11V 150 Collector Current, Ic (A) Collector Current, Ic (A) Tc=25C TYPICAL 100 10V 50 9V 9V 0 0 0 2 4 6 8 10 0 Collector to Emitter Voltage, VCE (V) Collector current vs. Collector to Emitter voltage 6 8 TYPICAL 10 Collector to Emitter Voltage, VCE (V) 8 6 4 Ic=200A Ic=100A 2 10 Collector to Emitter Voltage, VCE (V) Collector current vs. Collector to Emitter voltage Tc=25C Collector to Emitter Voltage, VCE (V) 4 TYPICAL 10 Tc=125C 8 6 4 Ic=200A Ic=100A 2 0 0 0 5 10 15 20 0 Gate to Emitter Voltage, VGE (V) Collector to Emitter voltage vs. Gate to Emitter voltage 5 10 15 20 Gate to Emitter Voltage, VGE (V) Collector to Emitter voltage vs. Gate to Emitter voltage TYPICAL 20 TYPICAL 200 Vcc=600V Ic =100A Tc=25C VGE=0V Tc=25C Tc=125C 15 Forward Current, IF (A) Gate to Emitter Voltage, VGE (V) 2 10 5 150 100 50 0 0 200 400 600 800 1000 Gate Charge, QG (nC) Gate charge characteristics 0 0 1 2 3 4 5 Forward Voltage, VF (V) Forward voltage of free-wheeling diode PDJ-M100GR12A-0 http://store.iiic.cc/ 1 0.5 10 Switching Time, t (s) Vcc=600V VGE=15V RG=12 TC=25C Inductive Load Switching Time, t (s) TYPICAL TYPICAL 1.5 toff VCC=600V VGE=15V IC =100A TC=25C Inductive Load toff ton 1 tr tf 0.1 ton tr tf 0 0.01 0 50 100 1 150 10 Collector Current, IC (A) Switching time vs. Collector current 100 Gate Resistance, RG () Switching time vs. Gate resistance TYPICAL TYPICAL 100 VCC=600V VGE=15V RG=12 TC=125C Inductive Load 15 Switching Loss, Eton, Etoff, Err (mJ/pulse) Switching Loss, Eton,Etoff, Err (mJ/pulse) 20 Eton Etoff 10 Err 5 0 VCC=600V VGE=15V IC =100A TC=125C Inductive Load Etoff 10 Err 1 0.1 0 50 100 150 1 1000 Transient Thermal Impedance, Rth(j-c) (C/W) 100 10 1 0.1 200 100 1 VGE=15V RG=12 TC125C 0 10 Gate Resistance. RG () Switching loss vs. Gate resistance Collector Current. IC (A) Switching loss vs. Collector current Collector Current, Ic (A) Eton 400 600 800 1000 1200 1400 Diode IGBT 0.1 0.01 0.001 0.001 0.01 0.1 1 10 Time, t (s) Transient thermal impedance Collector to Emitter Voltage, VCE (V) Reverse biased safe operating area PDJ-M100GR12A-0 http://store.iiic.cc/ http://www.hitachi.co.jp/products/power/ps/ http://store.iiic.cc/