Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below. Instead of http://www.nxp.com, http://www.philips.com/ or http://www.semiconductors.philips.com/, use http://www.nexperia.com Instead of sales.addresses@www.nxp.com or sales.addresses@www.semiconductors.philips.com, use salesaddresses@nexperia.com (email) Replace the copyright notice at the bottom of each page or elsewhere in the document, depending on the version, as shown below: - (c) NXP N.V. (year). All rights reserved or (c) Koninklijke Philips Electronics N.V. (year). All rights reserved Should be replaced with: - (c) Nexperia B.V. (year). All rights reserved. If you have any questions related to the data sheet, please contact our nearest sales office via e-mail or telephone (details via salesaddresses@nexperia.com). Thank you for your cooperation and understanding, Kind regards, Team Nexperia 83B BSS84AKMB SO T8 50 V, single P-channel Trench MOSFET Rev. 1 -- 6 June 2012 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits Logic-level compatible Very fast switching Trench MOSFET technology ElectroStatic Discharge (ESD) protection up to 1 kV Ultra thin package profile with 0.37 mm height 1.3 Applications Relay driver High-side load switch High-speed line driver Switching circuits 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit VDS drain-source voltage Tj = 25 C - - -50 V VGS gate-source voltage -20 - 20 V - - -230 mA - 4.5 7.5 drain current ID VGS = -10 V; Tamb = 25 C [1] Static characteristics RDSon [1] drain-source on-state resistance VGS = -10 V; ID = -100 mA; Tj = 25 C Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 1 cm2. BSS84AKMB NXP Semiconductors 50 V, single P-channel Trench MOSFET 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline 1 G gate 2 S source 1 3 D drain 2 Graphic symbol D 3 G Transparent top view SOT883B (DFN1006B-3) S 017aaa259 3. Ordering information Table 3. Ordering information Type number Package Name Description Version BSS84AKMB DFN1006B-3 Leadless ultra small plastic package; 3 solder lands; body 1.0 x 0.6 x 0.37 mm SOT883B 4. Marking Table 4. Marking codes Type number Marking code BSS84AKMB 0000 0010 PIN 1 INDICATION READING DIRECTION READING EXAMPLE: 0111 1011 MARKING CODE (EXAMPLE) READING DIRECTION 006aac673 Fig 1. DFN1006B-3 (SOT883B) binary marking code description BSS84AKMB Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 -- 6 June 2012 (c) NXP B.V. 2012. All rights reserved. 2 of 15 BSS84AKMB NXP Semiconductors 50 V, single P-channel Trench MOSFET 5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VDS drain-source voltage Tj = 25 C - -50 V VGS gate-source voltage drain current ID total power dissipation Ptot 20 V VGS = -10 V; Tamb = 25 C - -230 mA VGS = -10 V; Tamb = 100 C [1] - -150 mA Tamb = 25 C; single pulse; tp 10 s peak drain current IDM -20 [1] Tamb = 25 C - -0.9 A [2] - 360 mW [1] - 715 mW - 2700 mW Tsp = 25 C Tj junction temperature -55 150 C Tamb ambient temperature -55 150 C Tstg storage temperature -65 150 C Source-drain diode source current IS Tamb = 25 C [1] - -230 mA HBM [3] - 1000 V ESD maximum rating electrostatic discharge voltage VESD [1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 1 cm2. [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. [3] Measured between all pins. 001aao121 120 Pder (%) Ider (%) 80 80 40 40 0 -75 Fig 2. 001aao122 120 -25 25 75 125 Tj (C) Normalized total power dissipation as a function of junction temperature BSS84AKMB Product data sheet 0 -75 175 Fig 3. -25 25 75 125 Tj (C) 175 Normalized continuous drain current as a function of junction temperature All information provided in this document is subject to legal disclaimers. Rev. 1 -- 6 June 2012 (c) NXP B.V. 2012. All rights reserved. 3 of 15 BSS84AKMB NXP Semiconductors 50 V, single P-channel Trench MOSFET 001aao138 -10 ID (A) -1 (1) -10-1 (2) (3) (4) (5) -10-2 10-1 -1 -10 -102 VDS (V) IDM is single pulse (1) tp = 1 ms (2) DC; Tsp = 25 C (3) tp = 10 ms (4) tp = 100 ms (5) DC; Tamb = 25 C; drain mounting pad 1 cm2 Fig 4. Safe operating area; junction to ambient; continuous and peak drain currents as a function of drain-source voltage 6. Thermal characteristics Table 6. Symbol Rth(j-a) Rth(j-sp) Thermal characteristics Parameter thermal resistance from junction to ambient Conditions in free air Min Typ Max Unit [1] - 305 350 K/W [2] - 150 175 K/W - - 40 K/W thermal resistance from junction to solder point [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm2. BSS84AKMB Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 -- 6 June 2012 (c) NXP B.V. 2012. All rights reserved. 4 of 15 BSS84AKMB NXP Semiconductors 50 V, single P-channel Trench MOSFET 017aaa109 103 duty cycle = 1 Zth(j-a) (K/W) 0.75 0.5 0.33 102 0.25 0.2 0.1 0.05 0 0.02 0.01 10 10-3 10-2 10-1 1 10 102 103 tp (s) FR4 PCB, standard footprint Fig 5. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values 017aaa110 103 Zth(j-a) (K/W) duty cycle = 1 0.75 102 0.5 0.25 0.33 0.2 0.1 0 10 10-3 0.05 0.02 0.01 10-2 10-1 1 10 102 103 tp (s) FR4 PCB, mounting pad for drain 1 cm2 Fig 6. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values BSS84AKMB Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 -- 6 June 2012 (c) NXP B.V. 2012. All rights reserved. 5 of 15 BSS84AKMB NXP Semiconductors 50 V, single P-channel Trench MOSFET 7. Characteristics Table 7. Characteristics Symbol Parameter Conditions Min Typ Max Unit Static characteristics V(BR)DSS drain-source breakdown voltage ID = -250 A; VGS = 0 V; Tj = 25 C -50 - - V VGSth gate-source threshold voltage ID = -250 A; VDS = VGS; Tj = 25 C -1.1 -1.6 -2.1 V IDSS drain leakage current VDS = -50 V; VGS = 0 V; Tj = 25 C - - -1 A VDS = -50 V; VGS = 0 V; Tj = 150 C - - -2 A IGSS gate leakage current VGS = -20 V; VDS = 0 V; Tj = 25 C - - -10 A VGS = 20 V; VDS = 0 V; Tj = 25 C - - -10 A VGS = -10 V; ID = -100 mA; Tj = 25 C - 4.5 7.5 RDSon gfs drain-source on-state resistance forward transconductance VGS = -10 V; ID = -100 mA; Tj = 150 C - 8 13.5 VGS = -5 V; ID = -100 mA; Tj = 25 C - 5.7 8.5 VDS = -10 V; ID = -100 mA; Tj = 25 C - 150 - mS VDS = -25 V; ID = -200 mA; VGS = -5 V; Tj = 25 C - 0.26 0.35 nC - 0.12 - nC Dynamic characteristics QG(tot) total gate charge QGS gate-source charge QGD gate-drain charge VDS = -10 V; ID = -200 mA; VGS = -5 V; Tj = 25 C - 0.09 - nC Ciss input capacitance - 24 36 pF Coss output capacitance VDS = -25 V; f = 1 MHz; VGS = 0 V; Tj = 25 C - 4.5 - pF Crss reverse transfer capacitance - 1.3 - pF td(on) turn-on delay time - 13 26 ns tr rise time - 11 - ns td(off) turn-off delay time - 48 96 ns tf fall time - 25 - ns -0.48 -0.85 -1.2 V VDS = -30 V; RL = 250 ; VGS = -10 V; RG(ext) = 6 ; Tj = 25 C Source-drain diode VSD source-drain voltage BSS84AKMB Product data sheet IS = -115 mA; VGS = 0 V; Tj = 25 C All information provided in this document is subject to legal disclaimers. Rev. 1 -- 6 June 2012 (c) NXP B.V. 2012. All rights reserved. 6 of 15 BSS84AKMB NXP Semiconductors 50 V, single P-channel Trench MOSFET 001aao124 -0.20 001aao125 -10-3 VGS = -10 V -4.0 V -3.5 V ID (A) ID (A) -0.15 (3) (2) (1) -10-4 -3.0 V -0.10 -10-5 -2.5 V -0.05 0 0 -1 -2 -3 VDS (V) -10-6 -4 Tj = 25 C 0 -0.5 -1.0 -1.5 -2.0 -2.5 VGS (V) Tj = 25 C; VDS = -5 V (1) minimum values (2) typical values (3) maximum values Fig 7. Output characteristics; drain current as a function of drain-source voltage; typical values 001aao126 12 (1) (2) Fig 8. Subthreshold drain current as a function of gate-source voltage 001aao127 14 (3) RDSon () RDSon () 8 10 (4) (1) (5) 4 6 (2) 0 0 -0.1 -0.2 -0.3 ID (A) -0.4 2 0 -2 Tj = 25 C ID = -200 mA (1) VGS = -3.0 V (1) Tj = 150 C (2) VGS = -3.5 V (2) Tj = 25 C -4 -6 -8 -10 VGS (V) (3) VGS = -4.0 V (4) VGS = -5.0 V (5) VGS = -10.0 V Fig 9. Drain-source on-state resistance as a function of drain current; typical values BSS84AKMB Product data sheet Fig 10. Drain-source on-state resistance as a function of gate-source voltage; typical values All information provided in this document is subject to legal disclaimers. Rev. 1 -- 6 June 2012 (c) NXP B.V. 2012. All rights reserved. 7 of 15 BSS84AKMB NXP Semiconductors 50 V, single P-channel Trench MOSFET 001aao128 -0.20 ID (A) 001aao129 2.0 a (1) (2) -0.15 1.5 -0.10 1.0 -0.05 0.5 (2) (1) 0 0 -1 -2 -3 VGS (V) 0 -60 -4 0 60 120 Tj (C) 180 VDS > ID x RDSon (1) Tj = 25 C (2) Tj = 150 C Fig 11. Transfer characteristics: drain current as a function of gate-source voltage; typical values 001aao130 -3 Fig 12. Normalized drain-source on-state resistance as a function of junction temperature; typical values 001aao131 102 VGS(th) (V) C (pF) -2 (1) (1) (2) (2) -1 10 (3) (3) 0 -60 0 60 120 Tj (C) 180 1 -10-1 -1 ID = -0.25 mA; VDS = VGS f = 1 MHz, VGS = 0 V (1) maximum values (1) Ciss (2) typical values (2) Coss (3) minimum values (3) Crss Fig 13. Gate-source threshold voltage as a function of junction temperature BSS84AKMB Product data sheet -10 VDS (V) -102 Fig 14. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values All information provided in this document is subject to legal disclaimers. Rev. 1 -- 6 June 2012 (c) NXP B.V. 2012. All rights reserved. 8 of 15 BSS84AKMB NXP Semiconductors 50 V, single P-channel Trench MOSFET 001aao132 -10 VDS VGS (V) ID -8 VGS(pl) -6 VGS(th) VGS -4 QGS1 QGS2 QGS -2 QGD QG(tot) 003aaa508 0 0 0.2 0.4 QG (nC) 0.6 ID = -0.2 A; VDS = -25 V; Tamb = 25 C Fig 15. Gate-source voltage as a function of gate charge; typical values Fig 16. Gate charge waveform definitions 001aao133 -0.3 IS (A) -0.2 -0.1 (1) 0 0 -0.4 (2) -0.8 VSD (V) -1.2 VGS = 0 V (1) Tj = 150 C (2) Tj = 25 C Fig 17. Source current as a function of source-drain voltage; typical values BSS84AKMB Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 -- 6 June 2012 (c) NXP B.V. 2012. All rights reserved. 9 of 15 BSS84AKMB NXP Semiconductors 50 V, single P-channel Trench MOSFET 8. Test information P t2 duty cycle = t1 t2 t1 t 006aaa812 Fig 18. Duty cycle definition 9. Package outline 0.65 0.55 0.40 0.34 0.35 1 2 0.20 0.12 0.04 max 0.30 0.22 1.05 0.65 0.95 0.30 0.22 3 0.55 0.47 Dimensions in mm 11-11-02 Fig 19. Package outline SOT883B (DFN1006B-3) BSS84AKMB Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 -- 6 June 2012 (c) NXP B.V. 2012. All rights reserved. 10 of 15 BSS84AKMB NXP Semiconductors 50 V, single P-channel Trench MOSFET 10. Soldering Footprint information for reflow soldering SOT883B 1.3 0.7 R0.05 (8x) 0.9 0.6 0.7 0.25 (2x) 0.3 (2x) 0.3 0.4 (2x) 0.4 solder land solder land plus solder paste solder paste deposit solder resist occupied area Dimensions in mm sot883b_fr Fig 20. Reflow soldering footprint for SOT883B (DFN1006B-3) BSS84AKMB Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 -- 6 June 2012 (c) NXP B.V. 2012. All rights reserved. 11 of 15 BSS84AKMB NXP Semiconductors 50 V, single P-channel Trench MOSFET 11. Revision history Table 8. Revision history Document ID Release date Data sheet status Change notice Supersedes BSS84AKMB v.1 20120606 Product data sheet - - BSS84AKMB Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 -- 6 June 2012 (c) NXP B.V. 2012. All rights reserved. 12 of 15 BSS84AKMB NXP Semiconductors 50 V, single P-channel Trench MOSFET 12. Legal information 12.1 Data sheet status Document status[1] [2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term 'short data sheet' is explained in section "Definitions". [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URLhttp://www.nxp.com. 12.2 Definitions Preview -- The document is a preview version only. The document is still subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. 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NXP Semiconductors does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customer's applications or products, or the application or use by customer's third party customer(s). Customer is responsible for doing all necessary testing for the customer's applications and products using NXP Semiconductors products in order to avoid a default of the applications and the products or of the application or use by customer's third party customer(s). NXP does not accept any liability in this respect. Limiting values -- Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. All information provided in this document is subject to legal disclaimers. Rev. 1 -- 6 June 2012 (c) NXP B.V. 2012. All rights reserved. 13 of 15 BSS84AKMB NXP Semiconductors 50 V, single P-channel Trench MOSFET Terms and conditions of commercial sale -- NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published athttp://www.nxp.com/profile/terms, unless otherwise agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. NXP Semiconductors hereby expressly objects to applying the customer's general terms and conditions with regard to the purchase of NXP Semiconductors products by customer. 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Adelante,Bitport,Bitsound,CoolFlux,CoReUse,DESFire,EZ-HV,FabKey,G reenChip,HiPerSmart,HITAG,IC-bus logo,ICODE,I-CODE,ITEC,Labelution,MIFARE,MIFARE Plus,MIFARE Ultralight,MoReUse,QLPAK,Silicon Tuner,SiliconMAX,SmartXA,STARplug,TOPFET,TrenchMOS,TriMedia andUCODE -- are trademarks of NXP B.V. In the event that customer uses the product for design-in and use in automotive applications to automotive specifications and standards, customer (a) shall use the product without NXP Semiconductors' warranty of the HD Radio andHD Radio logo -- are trademarks of iBiquity Digital Corporation. 13. Contact information For more information, please visit:http://www.nxp.com For sales office addresses, please send an email to:salesaddresses@nxp.com BSS84AKMB Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 -- 6 June 2012 (c) NXP B.V. 2012. All rights reserved. 14 of 15 BSS84AKMB NXP Semiconductors 50 V, single P-channel Trench MOSFET 14. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 10 11 12 12.1 12.2 12.3 12.4 13 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . .1 General description . . . . . . . . . . . . . . . . . . . . . .1 Features and benefits . . . . . . . . . . . . . . . . . . . . .1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .1 Quick reference data . . . . . . . . . . . . . . . . . . . . .1 Pinning information . . . . . . . . . . . . . . . . . . . . . . .2 Ordering information . . . . . . . . . . . . . . . . . . . . . .2 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . .3 Thermal characteristics . . . . . . . . . . . . . . . . . . .4 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . .6 Test information . . . . . . . . . . . . . . . . . . . . . . . . .10 Package outline . . . . . . . . . . . . . . . . . . . . . . . . .10 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Revision history . . . . . . . . . . . . . . . . . . . . . . . . .12 Legal information. . . . . . . . . . . . . . . . . . . . . . . .13 Data sheet status . . . . . . . . . . . . . . . . . . . . . . .13 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . .13 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . .14 Contact information. . . . . . . . . . . . . . . . . . . . . .14 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section `Legal information'. (c) NXP B.V. 2012. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 6 June 2012 Document identifier: BSS84AKMB