TO-92 Plastic-Encapsulate Transistors Q\ GW 156 a Q oOo ; TO-92 l 1.EMITTER | ! 2.BASE | 3.COLLECTOR | ' 123 S$S8550 TRANSISTOR(PNP) FEATURES Viaricso: -40 V @ function temperature range Tu,Tatg: -55C to + 150C ELECTRICAL CHARACTERISTICS (Tamb=25C uniess otherwise specified) Collector-base breakdown voitage ViBRICBO Ic= -100 n A, le=0 40 Vv Coliector-emitter breakdown voltage ViBRICEO Ic= -0.1 mA, Is=0 -25 Vv Emitter-base breakdown voltage V(BR)EBO le= -100n A, Ic=0 46 Vv Collector cut-off current icao Vcra= -40 V, le=0 -0.1 BA Collector cut-off current Ico Vce=-20 V, =O 0.1 vA Emitter cut-off current leso Vep= -5 V, Ic=0 -0.1 vA , hres) Vce= -1 V, Ic= -100 mA 85 300 DC current gain hre(2) Vce= -1 V, Ic= -800 mA 40 Coliector-emitter saturation voltage VcEsat Ic= -800 mA, Ie= -80 mA -0.5 Vv Base-emitter saturation voltage VBEsat Ic= -800 mA, Is= -80 mA -1.2 Vv Base-emitter voltage Vee le= -1.5A -1.6 Vv Vce= -10 V, Iic= -50 mA Transition frequency fr 190 MHz f =30MHz TST Rank B Cc D Range 85-160 120-200 160-300 IcfmA], COLLECTOR CURRENT Veesat . Vcesat [V], SATURATION VOLTAGE Typical Characteristics le[mA], COLLECTOR CURRENT Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage -50 L's S00uA Le J 250UA _ te=-200UA -30 | la==150UA | aneeneennen 20 _ | le#-100UA pt | 4g2=-50UA -10 [_ 0 0 -10 -20 -30 AO 50 Vce[V], COLLECTOR-EMITTER VOLTAGE Static Characteristic -1000 T Vee sat -100 _ Vee sat ic=10le -10 10 +100 1000 1000 Vee =-1V Z << oO 5 100 > oO Yo \ a wi 40 10 -100 ~1000 Ic[mA], COLLECTOR CURRENT DC current Gain 5 1000 a Vee=-6V a a a a = 100 5 Z mo < { B49 z vy x e 5 oO WN x= 1 = 1 10 -100 -4000 -10000 lefmA], COLLECTOR CURRENT Current Gain Bandwidth Product 157