I BCX17 BCX18 SILICON PLANAR EPITAXIAL TRANSISTORS P-N-P transistors, in aSOT-23 plastic package, intended for application in thick and thin-film circuits. These transistors are intended for general purposes as well as saturated switching and driver applications for industrial service. N-P-N complements are BCX 19 and BCX20 respectively. QUICK REFERENCE DATA Collector-emitter voltage (Vge = 0) Collector-emitter voltage (open base} Collector current (peak value} Total power dissipation up to Tampb = 25 C Junction temperature D.C. current gain l = 100 mA; -VcE=1V Transition frequency I = 10 mA; VcE = 5 V; f = 100 MHz ~Vces max. -VCEO max. lcm max. Prot max. Tj max. hFE ft > BCX17 BCX18 50 30 Vv 45 25 Vv 1000 mA 250 mW 150 oC 100 to 600 80 MHz MECHANICAL DATA Fig. 1 SOT-23. Pinning: 1 = base 0.150 2 = emitter 075 0.090 3 = collector Cc { 0.1 40 aie | patina MBBO18 e 4 \ q max Par Ny max 30 max Reverse pinning types are available on request. Dimensions in mm 3.0 2.8 + [1.9] << Marking code BCX17 = Tip BCX18 = T2p =[0.2 oa] B| [A] f 14 4.2 _4 0 _ 0.48 5, TOP VIEW 10.100] 4 [8 | 2.5 ma x 7Z96885.1 September 1994 289 BCX17 BCX18 RATINGS Limiting values in accordance with the Absolute Maximum System (IEC 134) BCX17 BCX18 Collector-emitter voltage (Vg = 0) VcoES Collector-emitter voltage 'c = 10 mA (see Fig. 2) -VcEO Emitter-base voltage (open collector) -VEBO Collector current (d.c.) le Collector current (peak value) lcm Emitter current (peak value} lem Base current (d.c.} Ip Base current (peak value) |BM Total power dissipation up to Tamp = 25 9C* Prot Storage temperature T stg Junction temperature T THERMAL RESISTANCE From junction to ambient CHARACTERISTICS Tj = 25 OC unless otherwise specified Collector cut-off current Ip = 0; -Vcp=20V IcBo Ie =0; Vecp = 20 Vi Tj = 150 C lcgo Emitter cut-off current Ic =0;-Vegp=5V lEBO Base-emitter voltage 4 l= 500 mA;~VcE=1V VBE Saturation voltage Ic = 500 mA; Ip = 50mA VCEsat max. max. max, max. max. max. max. max. max. max. Mounted on an FR4 printed-circuit board 8 mm x 10 mm x 0.7 mm, 4 -Vge_ decreases by about 2 mV/C with increasing temperature. 250 65 to + 150 150 Rth ja = 10 1,2 620 500 mA mA mA mA mW oC 9 K/W nA uA BA mV 290 September 1994 BCX17 BCX18 D.C. current gain ~l = 100 mA;--Vee =1V BCX17 -25 nFE > 160 BCX17/18 hee 100 to 600 ~ic = 300 mA; Vce =1V hee > 70 ~-I = 500 mA;-Vce=1V hee > 40 Transition frequency at f = 100 MHz -lc= 10mA;-Vep=5V fr typ. 80 MHz Collector capacitance at f = 1 MHz le =p = 0; -Veg > 10V Ce typ. 8 pF September 1994 291