MMBT3904Q-7-F - DIODES Incorporated

MMBT3904

Document number: DS30036 Rev. 20 - 2 1 of 7

www.diodes.com August 2012

MMBT3904

40V NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR

Features

• Epitaxial Planar Die Construction

• Complementary PNP Type Available (MMBT3906)

• Ideal for Medium Power Amplification and Switching

• Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2)

• Halogen and Antimony Free. “Green” Device (Note 3)

• Qualified to AEC-Q101 Standards for High Reliability

• PPAP capable (Note 4)

Mechanical Data

• Case: SOT23

• Case Material: molded plastic, “Green” molding compound

• UL Flammability Classification Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020

• Terminals: Finish – Matte Tin Plated Leads, Solderable per

MIL-STD-202, Method 208

• Weight: 0.008 grams (approximate)

Ordering Information (Notes 4 & 5)

Product Compliance Marking Reel size (inches) Tape width (mm) Quantity per reel

MMBT3904-7-F AEC-Q101 K1N / C1N 7 8 3,000

MMBT3904Q-7-F Automotive K1N 7 8 3,000

MMBT3904-13-F AEC-Q101 K1N / C1N 13 8 10.000

Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.

2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen and Antimony free,"Green" and Lead-Free.

3. Halogen and Antimony free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and

<1000ppm antimony compounds.

4. Automotive products are AEC-Q101 qualified and are PPAP capable. Automotive, AEC-Q101 and standard products are electrically and thermally

the same, except where specified.

5. For packaging details, go to our website at http://www.diodes.com

Marking Information

Date Code Key

Year 2010 2011 2012 2013 2014 2015 2016 2017

Code X Y Z A B C D E

Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec

Code 1 2 3 4 5 6 7 8 9 O N D

Top View

SOT23

Device Symbol Top View

Pin-Out

C

B

E

K = SAT (Shanghai Assembly / Test site)

1N = Product Type Marking Code

YM = Date Code Marking

Y = Year (ex: Y = 2011)

M = Month (ex: 9 = September)

C = CAT (Chengdu Assembly / Test site)

1N = Product Type Marking Code

YM = Date Code Marking

Y = Year (ex: Y = 2011)

M = Month (ex: 9 = September)

MMBT3904

Document number: DS30036 Rev. 20 - 2 2 of 7

www.diodes.com August 2012

MMBT3904

Maximum Ratings (@TA = +25°C, unless otherwise specified.)

Characteristic Symbol Value Unit

Collector-Base Voltage VCBO 60 V

Collector-Emitter Voltage VCEO 40 V

Emitter-Base Voltage VEBO 6.0 V

Continuous Collector Current IC 200 mA

Thermal Characteristics (@TA = +25°C, unless otherwise specified.)

Characteristic Symbol Value Unit

Power Dissipation (Note 6) PD 310 mW

(Note 7) 350

Thermal Resistance, Junction to Ambient (Note 6) RθJA 403 °C/W

(Note 7) 357

Thermal Resistance, Junction to Leads (Note 8) RθJL 350 °C/W

Operating and Storage Temperature Range TJ,TSTG -55 to +150 °C

ESD Ratings (Note 9)

Characteristic Symbol Value Unit JEDEC Class

Electrostatic Discharge - Human Body Model ESD HBM ≥ 8,000 V 3B

Electrostatic Discharge - Machine Model ESD MM ≥ 400 V C

Notes: 6. For the device mounted on minimum recommended pad layout FR4 PCB with high coverage of single sided 1oz copper, in still air conditions.

7. For the device mounted on 15mm x 15mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions.

8. Thermal resistance from junctio n to solder-point (at the end of the collector lead).

9. Refer to JEDEC specification JESD22-A114 and JESD22-A115.

MMBT3904

Document number: DS30036 Rev. 20 - 2 3 of 7

www.diodes.com August 2012

MMBT3904

Thermal Characteristics

0 25 50 75 100 125 150

0.0

0.1

0.2

0.3

0.4

Derating Curve

Temperatu re (°C)

Ma x Powe r Di ssipati on (W )

100µ 1m 10m 100m 1 10 100 1k

0

50

100

150

200

250

300

350

400

Transient Thermal Imped an ce

D=0.5

D=0.2 D=0.1 Single Pulse

D=0.05

The rmal R esist a n ce (°C/ W )

Puls e Width (s)

10m 100m 1 10 100 1k

0.1

1

10 Single Pulse. Tamb=25°C

Pulse Power Dissipation

Puls e Width (s)

Max P owe r Dissip at i on (W)

MMBT3904

Document number: DS30036 Rev. 20 - 2 4 of 7

www.diodes.com August 2012

MMBT3904

Electrical Characteristics (@TA = +25°C, unless otherwise specified.)

Characteristic Symbol Min Max Unit Test Condition

OFF CHARACTERISTICS

Collector-Base Breakdown Voltage BVCBO 60 ⎯ V IC = 10μA, IE = 0

Collector-Emitter Breakdown Voltage (Note 10) BVCEO 40 ⎯ V IC = 10mA, IB = 0

Emitter-Base Breakdown Voltage BVEBO 6.0 ⎯ V IE = 10μA, IC = 0

Collector Cutoff Current ICEX ⎯ 50 nA

VCE = 30V, VEB

(

OFF

)

= 3.0V

Base Cutoff Current IBL ⎯ 50 nA

VCE = 30V, VEB

(

OFF

)

= 3.0V

ON CHARACTERISTICS (Note 10)

DC Current Gain hFE

40

70

100

60

30

⎯

300

⎯

IC = 100µA, VCE = 1.0V

IC = 1.0mA, VCE = 1.0V

IC = 10mA, VCE = 1.0V

IC = 50mA, VCE = 1.0V

IC = 100mA, VCE = 1.0V

Collector-Emitter Saturation Voltage VCE(sat) ⎯ 0.20

0.30 V IC = 10mA, IB = 1.0mA

IC = 50mA, IB = 5.0mA

Base-Emitter Saturation Voltage VBE(sat) 0.65

⎯ 0.85

0.95 V IC = 10mA, IB = 1.0mA

IC = 50mA, IB = 5.0mA

SMALL SIGNAL CHARACTERISTICS

Output Capacitance Cobo ⎯ 4.0 pF

VCB = 5.0V, f = 1.0MHz, IE = 0

Input Capacitance Cibo ⎯ 8.0 pF

VEB = 0.5V, f = 1.0MHz, IC = 0

Input Impedance hie 1.0 10 kΩ VCE = 10V, IC = 1.0mA,

f = 1.0kHz

Voltage Feedback Ratio hre 0.5 8.0 x 10-4

Small Signal Current Gain hfe 100 400 ⎯

Output Admittance hoe 1.0 40 μS

Current Gain-Bandwidth Product fT 300 ⎯ MHz VCE = 20V, IC = 10mA,

f = 100MHz

Noise Figure NF ⎯ 5.0 dB

VCE = 5.0V, IC = 100μA,

RS = 1.0kΩ, f = 1.0kHz

SWITCHING CHARACTERISTICS

Delay Time td ⎯ 35 ns

VCC = 3.0V, IC = 10mA,

VBE(off) = - 0.5V, IB1 = 1.0mA Rise Time t

r

⎯ 35 ns

Storage Time ts ⎯ 200 ns

VCC = 3.0V, IC = 10mA,

IB1 = IB2 = 1.0mA Fall Time tf ⎯ 50 ns

Notes: 9. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%.

MMBT3904

Document number: DS30036 Rev. 20 - 2 5 of 7

www.diodes.com August 2012

MMBT3904

1

10

1,000

100

0.1 110 1,000

100

h, D

C

U

R

EN

T

G

AIN

FE

I , COLLECTOR CURRENT (mA)

Fig. 1 T ypical DC Current Gain vs. Collector Current

C

0.01

0.1

1

0.1 1 10 100 1,000

V,

C

O

LLE

C

T

O

R

-EMI

T

E

R

(V)

CE(SAT)

SATURATION VOLTAGE

I , COLLECTOR CURRENT (mA)

Fig. 2 Typical Collector-Emitter Saturation Voltage

vs. Co l l ect or Cu rre nt

C

0.1

1

10

0.1 110 100 1,000

V , BASE-EMI

T

E

R

SA

T

U

R

A

T

I

O

N V

O

L

T

A

G

E (V)

BE(SAT)

I , COLLECTOR CURRENT (mA)

Fig. 3 T y pical Base-Emitter Saturation Vo ltage

vs. Col lecto r Cu r rent

C

0

5

1

5

10

0.1 110 100

C

A

P

A

C

I

T

AN

C

E (p

F

)

V , REVERSE VOL TAGE (V)

Fig . 4 Typical Cap aci t ance Character istics

R

0.001

0.01

0.1

1

0.1 1 10 100

V , COLLECTOR-EMITTER VOLTAGE (V)

CE

I,

C

O

LLE

C

T

O

R

C

U

R

E

N

T

(A)

C

Fig. 5 Typical Collector Current

vs. Collector-Emitter Volt age

DC

Pw = 100ms

Pw = 10ms

T = 25°C

A

Single Non-repetitive Pulse

DUT mounted onto 1xMRP

FR-4 board

MMBT3904

Document number: DS30036 Rev. 20 - 2 6 of 7

www.diodes.com August 2012

MMBT3904

Package Outline Dimensions

Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version.

Suggested Pad Layout

Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.

SOT23

Dim Min Max Typ

A 0.37 0.51 0.40

B 1.20 1.40 1.30

C 2.30 2.50 2.40

D 0.89 1.03 0.915

F 0.45 0.60 0.535

G 1.78 2.05 1.83

H 2.80 3.00 2.90

J 0.013 0.10 0.05

K 0.903 1.10 1.00

K1 - - 0.400

L 0.45 0.61 0.55

M 0.085 0.18 0.11

α 0° 8° -

All Dimensions in mm

Dimensions Value (in mm)

Z 2.9

X 0.8

Y 0.9

C 2.0

E 1.35

A

M

JL

D

F

BC

H

K

G

K1

XE

Y

C

Z

MMBT3904

Document number: DS30036 Rev. 20 - 2 7 of 7

www.diodes.com August 2012

MMBT3904

IMPORTANT NOTICE

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,

INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR

PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other

changes without further notice to this doc ument and an y product described herein. Diodes Incorporat ed does not assu me any liability arising

out of the application or use of this document or any product descr ibed herein; neither does Diodes Incorporated convey any license under

its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such

applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are

represented on Diodes Incorporated website, harmless against all damages.

Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales

channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall

indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising

out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.

Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and

markings noted herein may also be covered by one or more United States, international or foreign trademarks.

LIFE SUPPORT

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the

express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:

A. Life support devices or systems are devices or systems which:

1. are intended to implant into the body, or

2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in

the labeling can be reasonably expected to result in significant injury to the user.

B. A critical component is any component in a life support device or s ystem whose failure to p erform can be re asonabl y expected to cause

the failure of the life support device or to affect its safety or effectiveness.

Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems,

and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their

products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices-

or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes

Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life

support devices or systems.

www.diodes.com