SMBT2222A/ MMBT2222A
1 Feb-18-2002
NPN Silicon Switching Transistor
High DC current gain: 0.1mA to 500 mA
Low collector-emitter saturation voltage
Complementary type: SMBT2907A (PNP)
1
2
3
VPS05161
Type Marking Pin Configuration Package
SMBT2222A/ MMBT2222A s1P 1=B 2=E 3=C SOT23
Maximum Ratings
Parameter Symbol Value Unit
Collector-emitter voltage VCEO 40 V
Collector-base voltage VCBO 75
Emitter-base voltage VEBO 6
DC collector current IC600 mA
Total power dissipation, TS = 77 °C Ptot 330 mW
Junction temperature Tj150 °C
Storage temperature Tstg -65 ... 150
Thermal Resistance
Junction - soldering point1) RthJS
220 K/W
1For calculation of RthJA please refer to Application Note Thermal Resistance
SMBT2222A/ MMBT2222A
2 Feb-18-2002
Electrical Characteristics at TA = 25°C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
DC Characteristics
Collector-emitter breakdown voltage
IC = 10 mA, IB = 0
V(BR)CEO 40 - - V
Collector-base breakdown voltage
IC = 10 µA, IE = 0
V(BR)CBO 75 - -
Emitter-base breakdown voltage
IE = 10 µA, IC = 0
V(BR)EBO 6 - -
Collector cutoff current
VCB = 60 V, IE = 0
ICBO - - 10 nA
Collector cutoff current
VCB = 60 V, IE = 0 , TA = 150 °C
ICBO - - 10 µA
Emitter cutoff current
VEB = 3 V, IC = 0
IEBO - - 10 nA
DC current gain 1)
IC = 100 µA, VCE = 10 V
IC = 1 mA, VCE = 10 V
IC = 10 mA, VCE = 10 V
IC = 150 mA, VCE = 1 V
IC = 150 mA, VCE = 10 V
IC = 500 mA, VCE = 10 V
IC = 10 mA, VCE = 10 V, TA = 55°C
hFE
35
50
75
50
100
40
35
-
-
-
-
-
-
-
-
-
-
-
300
-
-
-
Collector-emitter saturation voltage1)
IC = 150 mA, IB = 15 mA
IC = 500 mA, IB = 50 mA
VCEsat
-
-
-
-
0.3
1
V
Base-emitter saturation voltage 1)
IC = 150 mA, IB = 15 mA
IC = 500 mA, IB = 50 mA
VBEsat
0.6
-
-
-
1.2
2
1) Pulse test: t ≤=300µs, D = 2%
SMBT2222A/ MMBT2222A
3 Feb-18-2002
Electrical Characteristics at TA = 25°C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
AC Characteristics
Transition frequency
IC = 20 mA, VCE = 20 V, f = 100 MHz
fT300 - - MHz
Collector-base capacitance
VCB = 10 V, f = 1 MHz
Ccb - - 8 pF
Emitter-base capacitance
VEB = 0.5 V, f = 1 MHz
Ceb - - 25
Noise figure
IC = 100 µA, VCE = 10 V, RS = 1 k
,
f = 1 kHz,
f = 200 Hz
F- - 4 dB
Short-circuit input impedance
IC = 1 mA, VCE = 10 V, f = 1 kHz
IC = 10 mA, VCE = 10 V, f = 1 kHz
h11e
2
0.25
-
-
8
1.25
k
Open-circuit reverse voltage transf.ratio
IC = 1 mA, VCE = 10 V, f = 1 kHz
IC = 10 mA, VCE = 10 V, f = 1 kHz
h12e
-
-
-
-
8
4
10-4
Short-circuit forward current transf.ratio
IC = 1 mA, VCE = 10 V, f = 1 kHz
IC = 10 mA, VCE = 10 V, f = 1 kHz
h21e
50
75
-
-
300
375
-
Open-circuit output admittance
IC = 1 mA, VCE = 10 V, f = 1 kHz
IC = 10 mA, VCE = 10 V, f = 1 kHz
h22e
5
25
-
-
35
200
S
Delay time
VCC = 30 V, IC = 150 mA, IB1 = 15 mA,
VBE(off) = 0.5 V
td- - 10 ns
Rise time
VCC = 30 V, IC = 150 mA, IB1 = 15 mA,
V
BE(off)
= 0.5 V
tr-
-
25
Storage time
V
CC
= 30 V, IC = 150 mA, IB1=IB2 = 15mA
tstg - - 225 ns
Fall time
VCC = 30 V, IC = 150 mA, IB1
=
IB2 = 15mA
tf- - 60 ns
SMBT2222A/ MMBT2222A
4 Feb-18-2002
Test circuits
Delay and rise time
EHN00055
200
Osc.
619
30
9.9
00.5
Ω
Ω
V
V
V
Storage and fall time
EHN00056
200
Osc.
1
30
16.2
0
-13.8
-3.0
µ500~s
s~100
µ
< 5 ns
Ω
Ω
V
V
V
V
k
Oscillograph: R > 100Ω, C < 12pF, tr < 5ns
SMBT2222A/ MMBT2222A
5 Feb-18-2002
Collector-base capacitance CCB = f (VCB)
f = 1MHz
EHP00739SMBT 2222/A
10
pF
10 10 V
C
CB
10
5
10
cb
55
-1 0 1 2
10
2
1
10
0
5
V
Total power dissipation Ptot = f(TS)
0 15 30 45 60 75 90 105 120 °C 150
TS
0
30
60
90
120
150
180
210
240
270
300
mW
360
P
tot
Permissible pulse load
Ptotmax / PtotDC = f (tp)
10
EHP00740SMBT 2222/A
-6
0
10
5
D
=
5
101
5
102
3
10
10-5 10-4 10-3 10-2 100
s
0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
tp
=
DT
tp
T
totmax
tot
PDC
P
p
t
Transition frequency fT = f (IC)
VCE = 20V
EHP00741SMBT 2222/A
10
10 10 mA
f
C
10
MHz
10
T
555
Ι
0123
10
3
2
10
1
5
2
2
SMBT2222A/ MMBT2222A
6 Feb-18-2002
Saturation voltage IC = f (VBEsat, VCEsat)
hFE = 10
EHP00742SMBT 2222/A
10
0V
BE sat
mA
10
3
1
10
-1
5
10
0
5
V
0.2 0.4 0.6 0.8 1.0 1.2
CE sat
V,
5
10
2
V
BE
V
CE
Ι
C
DC current gain hFE = f (IC)
VCE = 10V
EHP00743SMBT 2222/A
10
10 mA
h
C
10
5
FE
10
3
2
10
1
5
10 10 10
-1 0 1 2 3
Ι
-50 ˚C
25 ˚C
150 ˚C
Delay time td = f (IC)
Rise time tr = f (IC)
EHP00744SMBT 2222/A
10
ns
10 10 mA
t
C
10
5
10
d
555
Ι
0123
10
3
2
10
1
5
r
t,
h
FE
t
d
t
d
t
r
t
r
V
CC
= 30 V
= 10
V
BE
= 5 V
= 2 V
= 0 V
V
BE
V
BE
Storage time tstg = f (IC)
Fall time tf = f (IC)
EHP00745SMBT 2222/A
10
10 mA
C
5
10
3
2
10
1
5
10 10
12 3
Ι
5 5
ns
FE
h
h
FE
s
t
f
t
= 10
= 20
s
t t,
f
h
FE
= 10
