SMBT2222A/ MMBT2222A NPN Silicon Switching Transistor 3 High DC current gain: 0.1mA to 500 mA Low collector-emitter saturation voltage Complementary type: SMBT2907A (PNP) 2 1 Type SMBT2222A/ MMBT2222A Marking s1P 1=B Pin Configuration 2=E 3=C VPS05161 Package SOT23 Maximum Ratings Parameter Symbol Collector-emitter voltage VCEO 40 Collector-base voltage VCBO 75 Emitter-base voltage VEBO 6 DC collector current IC 600 mA Total power dissipation, TS = 77 C Ptot 330 mW Junction temperature Tj 150 C Storage temperature Tstg Value Unit V -65 ... 150 Thermal Resistance Junction - soldering point 1) RthJS 220 K/W 1For calculation of R thJA please refer to Application Note Thermal Resistance 1 Feb-18-2002 SMBT2222A/ MMBT2222A Electrical Characteristics at TA = 25C, unless otherwise specified Symbol Values Parameter Unit min. typ. max. V(BR)CEO 40 - - V(BR)CBO 75 - - V(BR)EBO 6 - - ICBO - - 10 nA ICBO - - 10 A IEBO - - 10 nA DC Characteristics Collector-emitter breakdown voltage V IC = 10 mA, IB = 0 Collector-base breakdown voltage IC = 10 A, IE = 0 Emitter-base breakdown voltage IE = 10 A, IC = 0 Collector cutoff current VCB = 60 V, IE = 0 Collector cutoff current VCB = 60 V, IE = 0 , TA = 150 C Emitter cutoff current VEB = 3 V, IC = 0 - hFE DC current gain 1) IC = 100 A, VCE = 10 V 35 - - IC = 1 mA, VCE = 10 V 50 - - IC = 10 mA, VCE = 10 V 75 - - IC = 150 mA, VCE = 1 V 50 - - IC = 150 mA, VCE = 10 V 100 - 300 IC = 500 mA, VCE = 10 V 40 - - IC = 10 mA, VCE = 10 V, TA = 55C 35 - V VCEsat Collector-emitter saturation voltage1) - - 0.3 - - 1 IC = 150 mA, IB = 15 mA 0.6 - 1.2 IC = 500 mA, IB = 50 mA - - 2 IC = 150 mA, IB = 15 mA IC = 500 mA, IB = 50 mA VBEsat Base-emitter saturation voltage 1) 1) Pulse test: t =300s, D = 2% 2 Feb-18-2002 SMBT2222A/ MMBT2222A Electrical Characteristics at TA = 25C, unless otherwise specified Symbol Values Parameter Unit min. typ. max. 300 - - MHz Ccb - - 8 pF Ceb - - 25 F - - 4 AC Characteristics fT Transition frequency IC = 20 mA, VCE = 20 V, f = 100 MHz Collector-base capacitance VCB = 10 V, f = 1 MHz Emitter-base capacitance VEB = 0.5 V, f = 1 MHz Noise figure IC = 100 A, VCE = 10 V, RS = 1 k, f = 1 kHz, f = 200 Hz k h11e Short-circuit input impedance IC = 1 mA, VCE = 10 V, f = 1 kHz 2 - 8 IC = 10 mA, VCE = 10 V, f = 1 kHz 0.25 - 1.25 10-4 h12e Open-circuit reverse voltage transf.ratio IC = 1 mA, VCE = 10 V, f = 1 kHz - - 8 IC = 10 mA, VCE = 10 V, f = 1 kHz - - 4 - h21e Short-circuit forward current transf.ratio IC = 1 mA, VCE = 10 V, f = 1 kHz 50 - 300 IC = 10 mA, VCE = 10 V, f = 1 kHz 75 - 375 S h22e Open-circuit output admittance dB IC = 1 mA, VCE = 10 V, f = 1 kHz 5 - 35 IC = 10 mA, VCE = 10 V, f = 1 kHz 25 - 200 td - - 10 tr - - 25 tstg - - 225 ns tf - - 60 ns Delay time ns VCC = 30 V, IC = 150 mA, IB1 = 15 mA, VBE(off) = 0.5 V Rise time VCC = 30 V, IC = 150 mA, IB1 = 15 mA, VBE(off) = 0.5 V Storage time VCC = 30 V, IC = 150 mA, IB1 =IB2 = 15mA Fall time VCC = 30 V, IC = 150 mA, IB1 =IB2 = 15mA 3 Feb-18-2002 SMBT2222A/ MMBT2222A Test circuits Delay and rise time 30 V 200 Osc. 619 9.9 V 0 0.5 V EHN00055 Storage and fall time 30 V ~100 s 200 < 5 ns 16.2 V Osc. 1 k 0 -13.8 V ~ 500 s -3.0 V EHN00056 Oscillograph: R > 100, C < 12pF, tr < 5ns 4 Feb-18-2002 SMBT2222A/ MMBT2222A Total power dissipation Ptot = f(TS) Collector-base capacitance CCB = f (VCB) f = 1MHz 10 2 pF 360 mW SMBT 2222/A EHP00739 Ccb 5 300 Ptot 270 240 210 10 1 180 150 5 120 90 60 30 0 0 15 30 45 60 75 90 105 120 10 0 10 -1 C 150 TS 5 10 0 5 10 1 V CB Permissible pulse load Transition frequency fT = f (IC) Ptotmax / PtotDC = f (tp ) VCE = 20V 10 3 SMBT 2222/A EHP00740 Ptot max 5 Ptot DC 10 3 tp tp D= T V 10 2 fT SMBT 2222/A EHP00741 MHz T 10 2 D= 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 5 10 1 2 10 2 5 5 2 10 0 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 101 10 0 0 5 10 1 5 10 2 mA 5 10 3 C tp 5 Feb-18-2002 SMBT2222A/ MMBT2222A Saturation voltage IC = f (VBEsat , VCEsat) DC current gain hFE = f (IC ) hFE = 10 VCE = 10V SMBT 2222/A 10 3 EHP00742 10 3 SMBT 2222/A EHP00743 mA C VCE 10 2 h FE VBE 5 150 C 5 25 C 10 2 10 1 5 -50 C 5 10 0 5 10 -1 0.2 0 0.4 0.6 0.8 10 1 -1 10 1.0 V 1.2 10 0 10 1 VBE sat , VCE sat Delay time td = f (IC ) Storage time tstg = f (IC ) Rise time tr = f (IC) Fall time 10 3 ns td,tr SMBT 2222/A EHP00744 10 3 2 10 C mA 10 3 tf = f (IC) SMBT 2222/A EHP00745 ns 5 t s, t f 5 VCC = 30 V h FE = 10 tr ts tr V = 5 V BE 10 2 5 h FE = 10 10 2 td VBE = 2 V 5 h FE = 20 tf td h FE = 10 VBE = 0 V 10 1 10 0 5 10 1 5 10 2 mA 5 C 10 1 1 10 10 3 5 10 2 mA 5 10 3 C 6 Feb-18-2002