1N5829 thru 1N5831R Silicon Power Schottky Diode VRRM = 20 V - 40 V IF = 25 A Features * High Surge Capability * Types up to 40V VRRM DO-4 Package * Not ESD Sensitive Note: 1. Standard polarity: Stud is cathode. 2. Reverse polarity (R): Stud is anode. 3. Stud is base. Maximum ratings, at Tj = 25 C, unless otherwise specified Parameter Symbol ("R" devices have leads reversed) Conditions 1N5829 (R) 1N5830 (R) 1N5831 (R) Unit Repetitive peak reverse voltage VRRM 20 25 35 V RMS reverse voltage VRMS 14 17 25 V DC blocking voltage VDC 20 25 35 V Continuous forward current IF TC 100 C 25 25 25 A Surge non-repetitive forward current, Half Sine Wave IF,SM TC = 25 C, tp = 8.3 ms 800 800 800 A Operating temperature Storage temperature Tj Tstg -55 to 150 -55 to 150 -55 to 150 -55 to 150 -55 to 150 -55 to 150 C C Electrical characteristics, at Tj = 25 C, unless otherwise specified Parameter Conditions 1N5829 (R) 1N5830 (R) 1N5831 (R) Unit IF = 25 A, Tj = 25 C VR = 20 V, Tj = 25 C VR = 20 V, Tj = 125 C 0.58 2 250 0.58 2 250 0.58 2 250 V 1.8 1.8 1.8 Symbol Diode forward voltage VF Reverse current IR mA Thermal characteristics Thermal resistance, junction case RthJC www.genesicsemi.com/silicon-products/schottky-rectifiers/ 1 C/W 1N5829 thru 1N5831R www.genesicsemi.com/silicon-products/schottky-rectifiers/ 2 1N5829 thru 1N5831R Package dimensions and terminal configuration Product is marked with part number and terminal configuration. DO- 4 (DO-203AA) M J P D B G N C E F A Inches Min Millimeters Max Min A Max 10-32 UNF B 0.424 0.437 10.77 11.10 C ----- 0.505 ----- 12.82 D ------ 0.800 ----- 20.30 E 0.453 0.492 11.50 12.50 F 0.114 0.140 2.90 3.50 G ----- 0.405 ----- 10.29 J ----- 0.216 ----- 5.50 M ----- 0.302 ----- 7.68 N 0.031 0.045 0.80 1.15 P 0.070 0.79 1.80 2.00 www.genesicsemi.com/silicon-products/schottky-rectifiers/ 3 Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: GeneSiC Semiconductor: 1N5831 1N5829R 1N5830 1N5831R 1N5829 1N5830R