NIF9N05CLT3G - ON Semiconductor

November, 2011 − Rev. 6

1Publication Order Number:

NIF9N05CL/D

NIF9N05CL, NIF9N05ACL

Protected Power MOSFET

2.6 A, 52 V, N−Channel, Logic Level,

Clamped MOSFET w/ ESD Protection

in a SOT−223 Package

Benefits

•High Energy Capability for Inductive Loads

•Low Switching Noise Generation

Features

•Diode Clamp Between Gate and Source

•ESD Protection − HBM 5000 V

•Active Over−Voltage Gate to Drain Clamp

•Scalable to Lower or Higher RDS(on)

•Internal Series Gate Resistance

•Pb−Free Packages are Available

Applications

•Automotive and Industrial Markets:

Solenoid Drivers, Lamp Drivers, Small Motor Drivers

MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)

Rating Symbol Value Unit

Drain−to−Source Voltage Internally Clamped VDSS 52−59 V

Gate−to−Source Voltage − Continuous VGS ±15 V

Drain Current

− Continuous @ TA = 25°C

− Single Pulse (tp = 10 ms) (Note 1)

IDM

2.6

Total Power Dissipation @ TA = 25°C (Note 1) PD1.69 W

Operating and Storage Temperature Range TJ, Tstg −55 to 150 °C

Single Pulse Drain−to−Source

Avalanche Energy (VDD = 50 V, ID(pk) = 1.17

A, VGS = 10 V, L = 160 mH, RG = 25 W)

EAS 110 mJ

Thermal Resistance,

Junction−to−Ambient (Note 1)

Junction−to−Ambient (Note 2)

RqJA

169

°C/W

Maximum Lead Temperature for Soldering

Purposes, 1/8″ from Case for 10 Seconds

TL260 °C

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1. When surface mounted to a FR4 board using 1″ pad size, (Cu area 1.127 in2).

2. When surface mounted to a FR4 board using minimum recommended pad

size, (Cu area 0.412 in2).

MPWR

Gate

(Pin 1) RG

Overvoltage

Protection

ESD Protection

http://onsemi.com

SOT−223

CASE 318E

STYLE 3

DRAIN

GATE

DRAIN

SOURCE

(Top View)

MARKING DIAGRAM

AYW

xxxxx G

A = Assembly Location

Y = Year

W = Work Week

xxxxx = F9N05 or 9N05A

G= Pb−Free Package

VDSS

(Clamped) RDS(ON) TYP ID MAX

52 V 107 mW2.6 A

Source

(Pin 3)

Drain

(Pins 2, 4)

See detailed ordering and shipping information in the package

dimensions section on page 5 of this data sheet.

ORDERING INFORMATION

(Note: Microdot may be in either location)

NIF9N05CL, NIF9N05ACL

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MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)

Characteristic Symbol Min Typ Max Unit

OFF CHARACTERISTICS

Drain−to−Source Breakdown Voltage (Note 3)

(VGS = 0 V, ID = 1.0 mA, TJ = 25°C)

(VGS = 0 V, ID = 1.0 mA, TJ = −40°C to 125°C)

Temperature Coefficient (Negative)

V(BR)DSS 52

50.8

−9.3

59.5

mV/°C

Zero Gate Voltage Drain Current

(VDS = 40 V, VGS = 0 V)

(VDS = 40 V, VGS = 0 V, TJ = 125°C)

IDSS 10

Gate−Body Leakage Current

(VGS = ±8 V, VDS = 0 V)

(VGS = ±14 V, VDS = 0 V)

IGSS

±22

±10

ON CHARACTERISTICS (Note 3)

Gate Threshold Voltage (Note 3)

(VDS = VGS, ID = 100 mA)

Threshold Temperature Coefficient (Negative)

VGS(th) 1.3 1.75

−4.1

2.5 V

mV/°C

Static Drain−to−Source On−Resistance (Note 3)

(VGS = 3.5 V, ID = 0.6 A)

(VGS = 4.0 V, ID = 1.5 A)

(VGS = 10 V, ID = 2.6 A)

RDS(on) 190

165

107

380

200

125

Forward Transconductance (Note 3) (VDS = 15 V, ID = 2.6 A) gFS 3.8 Mhos

DYNAMIC CHARACTERISTICS

Input Capacitance

VDS = 35 V, VGS = 0 V,

f = 10 kHz

Ciss 155 250 pF

Output Capacitance Coss 60 100

Transfer Capacitance Crss 25 40

Input Capacitance

VDS = 25 V, VGS = 0 V,

f = 10 kHz

Ciss 170 pF

Output Capacitance Coss 70

Transfer Capacitance Crss 30

3. Pulse Test: Pulse Width ≤300 ms, Duty Cycle ≤ 2%.

4. Switching characteristics are independent of operating junction temperatures.

NIF9N05CL, NIF9N05ACL

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MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)

Characteristic UnitMaxTypMinSymbol

SWITCHING CHARACTERISTICS (Note 4)

Turn−On Delay Time

VGS = 4.5 V, VDD = 40 V,

ID = 2.6 A, RD = 15.4 W

td(on) 275 465 ns

Rise Time tr1418 2400

Turn−Off Delay Time td(off) 780 1320

Fall Time tf1120 1900

Turn−On Delay Time

VGS = 4.5 V, VDD = 40 V,

ID = 1.0 A, RD = 40 W

td(on) 242 ns

Rise Time tr1165

Turn−Off Delay Time td(off) 906

Fall Time tf1273

Turn−On Delay Time

VGS = 10 V, VDD = 15 V,

ID = 2.6 A, RD = 5.8 W

td(on) 107 ns

Rise Time tr290

Turn−Off Delay Time td(off) 1540

Fall Time tf1000

Gate Charge

VGS = 4.5 V, VDS = 40 V,

ID = 2.6 A (Note 3)

QT4.5 7.0 nC

Q10.9

Q22.6

Gate Charge

VGS = 4.5 V, VDS = 15 V,

ID = 1.5 A (Note 3)

QT3.9 nC

Q11.0

Q21.7

SOURCE−DRAIN DIODE CHARACTERISTICS

Forward On−Voltage IS = 2.6 A, VGS = 0 V (Note 3)

IS = 2.6 A, VGS = 0 V, TJ = 125°C

VSD 0.81

0.66

1.5 V

Reverse Recovery Time

IS = 1.5 A, VGS = 0 V,

dIs/dt = 100 A/ms (Note 3)

trr 730 ns

ta200

tb530

Reverse Recovery Stored Charge QRR 6.3 mC

ESD CHARACTERISTICS

Electro−Static Discharge Capability Human Body Model (HBM) ESD 5000 V

Machine Model (MM) 500

3. Pulse Test: Pulse Width ≤300 ms, Duty Cycle ≤ 2%.

4. Switching characteristics are independent of operating junction temperatures.

NIF9N05CL, NIF9N05ACL

http://onsemi.com

TYPICAL PERFORMANCE CURVES

Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics

0.3

Figure 3. On−Resistance vs. Gate−to−Source

Voltage

VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)

RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)

0.2

Figure 4. On−Resistance vs. Drain Current and

Gate Voltage

ID, DRAIN CURRENT (AMPS)

−50 0−25 25

1.7

1.5

1.1

0.9

0.5 50 150

Figure 5. On−Resistance Variation with

Temperature

TJ, JUNCTION TEMPERATURE (°C)

ID = 2 A

TJ = 25°C

0.16

TJ = 25°C

ID = 2.6 A

VGS = 12 V

RDS(on), DRAIN−TO−SOURCE RESISTANCE (NORMALIZED)

RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)

1.9

VGS = 10 V

212

1000

Figure 6. Drain−to−Source Leakage Current

vs. Voltage

VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)

IDSS, LEAKAGE (A)

TJ = 150°C

TJ = 100°C

VGS = 4 V

100000

1000000

0.24

30 35

810 1346

5540

0.1

0.2

0.4

0.08

0.12

100 125

10000

1.3

0.7

45 50

VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)

ID, DRAIN CURRENT (AMPS)

VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)

ID, DRAIN CURRENT (AMPS)

TJ = 25°C

TJ = −55°C

2.4 V

3.4 V

3.6 V

3.8 V

108

VDS ≥ 10 V

VGS = 10, 5 & 4 V

TJ = 100°C

1735 9

2.6 V

2.8 V

3 V

3.2 V

TJ = 25°C

NIF9N05CL, NIF9N05ACL

http://onsemi.com

TYPICAL PERFORMANCE CURVES

VDS = 0 V VGS = 0 V

010 10

300

200

100

GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (VOLTS)

C, CAPACITANCE (pF)

QG, TOTAL GATE CHARGE (nC)

VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)

TJ = 25°C

Coss

Ciss

Crss

ID = 2.6 A

TJ = 25°C

500

QGD

QGS

400

VGS VDS

15 25

0.8

VSD, SOURCE−TO−DRAIN VOLTAGE (VOLTS)

IS, SOURCE CURRENT (AMPS)

VGS = 0 V

TJ = 25°C

0.9 1

Figure 7. Capacitance Variation Figure 8. Gate−to−Source Voltage vs. Total

Gate Charge

Figure 9. Resistance Switching Time Variation

vs. Gate Resistance

0.5 0.70.6

Crss

Ciss

Figure 10. Diode Forward Voltage vs. Current

RG, GATE RESISTANCE (W)

VDD = 40 V

ID = 2.6 A

VGS = 10 V

t, TIME (ns)

td(off)

10000

100000

100

1 10 100

1000

25 30

VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)

VGS

VDS

td(on)

ORDERING INFORMATION

Device Package Shipping†

NIF9N05CLT1 SOT−223

1000 / Tape & Reel

NIF9N05CLT1G SOT−223

(Pb−Free)

NIF9N05ACLT1G

NIF9N05CLT3 SOT−223

4000 / Tape & Reel

NIF9N05CLT3G SOT−223

(Pb−Free)

NIF9N05ACLT3G

†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging

Specifications Brochure, BRD8011/D.

NIF9N05CL, NIF9N05ACL

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PACKAGE DIMENSIONS

SOT−223 (TO−261)

CASE 318E−04

ISSUE N

STYLE 3:

PIN 1. GATE

2. DRAIN

3. SOURCE

4. DRAIN

123

0.08 (0003)

NOTES:

1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.

2. CONTROLLING DIMENSION: INCH.

1.5

0.059 ǒmm

inchesǓ

SCALE 6:1

3.8

0.15

2.0

0.079

6.3

0.248

2.3

0.091

2.3

0.091

2.0

0.079

SOLDERING FOOTPRINT

DIM

MIN NOM MAX MIN

MILLIMETERS

1.50 1.63 1.75 0.060

INCHES

A1 0.02 0.06 0.10 0.001

b0.60 0.75 0.89 0.024

b1 2.90 3.06 3.20 0.115

c0.24 0.29 0.35 0.009

D6.30 6.50 6.70 0.249

E3.30 3.50 3.70 0.130

e2.20 2.30 2.40 0.087

0.85 0.94 1.05 0.033

0.064 0.068

0.002 0.004

0.030 0.035

0.121 0.126

0.012 0.014

0.256 0.263

0.138 0.145

0.091 0.094

0.037 0.041

NOM MAX

L1 1.50 1.75 2.00 0.060

6.70 7.00 7.30 0.264

0.069 0.078

0.276 0.287

− −

0°10°0°10°

L0.20 −−− −−− 0.008 −−− −−−

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to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability

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operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights

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NIF9N05CL/D

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