LTV847-V - Lite-On Technology Corporation

LITE-ON TECHNOLOGY CORPORATION

Property of LITE-ON Only

FEATURES

1. This specification shall be applied to photocoupler. Model No. LTV-817 as an option.

2. Applicable Models (Business dealing name)

* Dual-in-line package :

LTV817-V : 1-channel type / LTV827-V : 2-channel type /

LTV847-V : 4-channel type

* Wide lead spacing package :

LTV817M-V : 1-channel type / LTV827M-V : 2-channel type /

LTV847M-V : 4-channel type

* Surface mounting package :

LTV817S-V : 1-channel type / LTV827S-V : 2-channel type /

LTV847S-V : 4-channel type

* Tape and reel packaging :

LTV817STA1-V, LTV827STA1-V

3. The relevant models are the models Approved by VDE

according to DIN VDE 0884:1992-06

Approved Model No.: LTV-817 / LTV-827 / LTV-847 / LTV-817M / LTV-827M /

LTV-847M / LTV-817S / LTV-827S / LTV-847S

VDE approved No.: 094722

(According to the specification DIN VDE 0884:1992-06)

* Operating isolation voltage VIORM : 850V (Peak)

* Transient voltage VTR : 6000V (Peak)

* Pollution : 2 (According to VDE 0110-1 : 1997-04)

* Clearances distance (Between input and output) : 7.0mm (MIN.)

* Creepage distance (Between input and output) : 7.0mm (MIN.)

* Isolation thickness between input and output : 0.4mm (MIN.)

* Safety limit values Current (Isi) : 400mA (Diode side)

Power (Psi) : 700mW (Phototransistor side)

Temperature(Tsi) : 175oC

In order to keep safety electric isolation of photocoupler, please set the protective

circuit to keep within safety limit values when the actual application equipment

troubled.

* I ndication of VDE 0884 approval prints "4" for 4-pin and " " for 8 & 16 pin on sleeve

package.

Part No. : LTV817 / 827 / 847 (M, S, STA1) -V Page : 1 of 15

BNS-OD-C131/A4

LITE-ON TECHNOLOGY CORPORATION

Property of LITE-ON Only

OUTLINE DIMENSIONS

LTV817-V :

LTV827-V :

*1. Year date code.

*2. 2-digit work week.

*3. Factory identification mark shall be marked (Z : Taiwan, Y : Thailand, X : China).

*4. Rank shall be or shall not be marked.

Part No. : LTV817 / 827 / 847 (M, S, STA1) -V Page : 2of15

BNS-OD-C131/A4

TYPE I

(

INK MARK

)

TYPE II

(

LASER MARK

)

LITE-ON TECHNOLOGY CORPORATION

Property of LITE-ON Only

OUTLINE DIMENSIONS

LTV847-V :

LTV817M-V :

*1. Year date code.

*2. 2-digit work week.

*3. Factory identification mark shall be marked (Z : Taiwan, Y : Thailand, X : China).

*4. Rank shall be or shall not be marked.

Part No. : LTV817 / 827 / 847 (M, S, STA1) -V Page : 3of15

BNS-OD-C131/A4

TYPE I

(

INK MARK

)

TYPE II

(

LASER MARK

)

LITE-ON TECHNOLOGY CORPORATION

Property of LITE-ON Only

OUTLINE DIMENSIONS

LTV827M-V :

LTV847M-V :

*1. Year date code.

*2. 2-digit work week.

*3. Factory identification mark shall be marked (Z : Taiwan, Y : Thailand, X : China).

*4. Rank shall be or shall not be marked.

Part No. : LTV817 / 827 / 847 (M, S, STA1) -V Page : 4of15

BNS-OD-C131/A4

LITE-ON TECHNOLOGY CORPORATION

Property of LITE-ON Only

OUTLINE DIMENSIONS

LTV817S-V :

LTV827S-V :

*1. Year date code.

*2. 2-digit work week.

*3. Factory identification mark shall be marked (Z : Taiwan, Y : Thailand, X : China).

*4. Rank shall be or shall not be marked.

Part No. : LTV817 / 827 / 847 (M, S, STA1) -V Page : 5of15

BNS-OD-C131/A4

TYPE I

(

INK MARK

)

TYPE II

(

LASER MARK

)

LITE-ON TECHNOLOGY CORPORATION

Property of LITE-ON Only

OUTLINE DIMENSIONS

LTV847S-V :

*1. Year date code.

*2. 2-digit work week.

*3. Factory identification mark shall be marked (Z : Taiwan, Y : Thailand, X : China).

*4. Rank shall be or shall not be marked.

Part No. : LTV817 / 827 / 847 (M, S, STA1) -V Page : 6of15

BNS-OD-C131/A4

LITE-ON TECHNOLOGY CORPORATION

Property of LITE-ON Only

TAPING DIMENSIONS

LTV817STA1-V :

LTV827STA1-V :

Description Symbol Dimensions in mm ( inches )

Tape wide W 16 ± 0.3 ( .63 )

Pitch of sprocket holes P0 4 ± 0.1 ( .15 )

Distance of compartment F

P2 7.5 ± 0.1 ( .295 )

2 ± 0.1 ( .079 )

Distance of compartment to compartment P1 12 ± 0.1 ( .472 )

Part No. : LTV817 / 827 / 847 (M, S, STA1) -V Page : 7of15

BNS-OD-C131/A4

LITE-ON TECHNOLOGY CORPORATION

Property of LITE-ON Only

ABSOLUTE MAXIMUM RATING

( Ta = 25°C )

PARAMETER SYMBOL RATING UNIT

Forward Current IF 50 mA

Revers e Volt age VR 6 V

INPUT

Power Dissipation P 70 mW

Collector - Emitter Voltage VCEO 35 V

Emitter - Collector Voltage VECO 6 V

Collector Current IC 50 mA

OUTPUT

Collector P ower Dissipation PC 150 mW

Total Power Dissipation Ptot 200 mW

*1 Isolation Voltage Viso 5,000 Vrms

Operating Temperature Topr -30 ~ +100 °C

Storage Temperature Tstg -55 ~ +125 °C

*2 Soldering Temperature Tsol 260 °C

*1. AC For 1 Minute, R.H. = 40 ~ 60%

Isolation voltage shall be measured using the following method.

(1) Short between anode and cathode on the primary side and between collector and

emitter on the secondary side.

(2) The isolation voltage tester with zero-cross circuit shall be used.

(3) The waveform of applied voltage shall be a sine wave.

*2. For 10 Seconds

Part No. : LTV817 / 827 / 847 (M, S, STA1) -V Page : 8of15

BNS-OD-C131/A4

LITE-ON TECHNOLOGY CORPORATION

Property of LITE-ON Only

ELECTRICAL - OPTICAL CHARACTERISTICS

( Ta = 25°C )

PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS

Forward Voltage VF — 1.2 1.4 V IF=20mA

Reverse Current IR — — 10

µA VR=4V

INPUT

Terminal Capacitance Ct — 30 250 pF V=0, f=1KHz

Collector Dark Current ICEO — — 100 nA VCE=20V, IF=0

Collector-Emitter

Breakdown Voltage BVCEO 35 — — V

IC=0.1mA

IF=0

OUTPUT

Emitter-Collector

Breakdown Voltage BVECO 6 — — V

IE=10µA

IF=0

Collector Current IC 2.5 — 30 mA

* Current Transfe r Ratio CTR 50 — 600 %

IF=5mA

VCE=5V

Collector-Emitter

Saturation Voltage VCE(sat) — 0.1 0.2 V

IF=20mA

IC=1mA

Isolation Resistance Riso 5×1010 1×1011 — Ω DC500V

40 ~ 60% R.H.

Floating Capacitance Cf — 0.6 1 pF V=0, f=1MHz

Cut-Off Fre quency fc — 80 — kHz VCE=5V, IC=2mA

RL=100Ω, -3dB

Response Time (Rise) tr — 4 18

µs

TRANSFER

CHARACTERISTICS

Response Time (Fall) tf — 3 18

µs

VCE=2V, IC=2mA

RL=100Ω

* CTR I

I100%

C

F

=×

Part No. : LTV817 / 827 / 847 (M, S, STA1) -V Page : 9of15

BNS-OD-C131/A4

LITE-ON TECHNOLOGY CORPORATION

Property of LITE-ON Only

RANK TABLE OF CURRENT TRANSFER RATIO CTR

MODEL NO. RANK MARK CTR ( % )

L 50 ~ 100

A 80 ~ 160

B 130 ~ 260

C 200 ~ 400

D 300 ~ 600

LTV817-V

L or A or B or C or D or No mark 50 ~ 600

B 130 ~ 260

B or C or BC 130 ~ 400

C 200 ~ 400

C or D or CD 200 ~ 600

LTV827-V

LTV847-V

B、BC、C、CD or No mark 50 ~ 600

CONDITIONS

IF = 5 mA

VCE = 5 V

Ta = 25 °C

Part No. : LTV817 / 827 / 847 (M, S, STA1) -V Page : 10 of 15

BNS-OD-C131/A4

LITE-ON TECHNOLOGY CORPORATION

Property of LITE-ON Only

ISOLATION SPECIFICATION ACCORDING TO VDE 0884

Parameter Symbol Conditions Rating Unit Remark

Class of environmental test - DIN IEC68 30/100/21 -

Pollution - DIN VDE0110 2 -

Maximum Operating

Isolation Voltage VIORM - 850 VPEAK

Diagram 1 tp=60s, qc<5pC 1275 VPEAK

Partial Discharge Test

Voltage (Between

Input and Output) Diagram 2 Vpr tp=1s, qc<5pC 1594 VPEAK

Maximum Ov er-voltage VINITIAL tINI = 10s 6000 VPEAK

Refer to the

Diagram 1, 2

Safety Maximum Ratings

1) Case Temperature Tsi IF = 0, Pc = 0 175 oC

2) Input Current Isi Pc=0 400 mA

3) Electric Power (Output or

Total Power Issipation) Psi - 700 mW

Refer to the

Figure 1, 3

Ta=Tsi MIN.109

Ta=Topr(MAX.) MIN.1011

Isolation Resistance

(Test Voltage Between

Input and Output : DC500V) RISO

Ta=25 oC MIN.1012

Ω

Precautions in performing isolation test

* Partial discharge test methods shall be the ones according to the specifications of

VDE 0884:1992-06

* Please don't carry out isolation test (Viso) over VINITIAL ,This product deteriorates

isolation characteristics by partial discharge due to applying high voltage

(ex. VINITIAL ). And there is possibility that this product occurs partial discharge in

operating isolation voltage (VIORM)

Part No. : LTV817 / 827 / 847 (M, S, STA1) -V Page : 11 of 15

BNS-OD-C131/A4

LITE-ON TECHNOLOGY CORPORATION

Property of LITE-ON Only

PARTIAL DISCHARGE TEST METHOD

t2t3

tini

t1 tp

tb t4

VVINTIAL

pr

V

IORM

V

t

t3 tp

tb t4

V

pr

V

IORM

V

t

Meth od (A ) for ty pe testing and random testing.

Meth od (B) for r outin e te sting.

t1, t2 = 1 to 10s

t3, t4 = 1s

tp (Partial Discharge Measuring Time)= 60s

tb = 62s

tini = 10 s

t3, t4 = 0.1s

tp (Partial Discharge Measuring Time)= 1s

tb = 1.2s

The partial discharge level shall not exceed 5 pC during the partial discharge measuring time

interval tp under the test conditions shown above.

Part No. : LTV817 / 827 / 847 (M, S, STA1) -V Page : 12 of 15

BNS-OD-C131/A4

LITE-ON TECHNOLOGY CORPORATION

Property of LITE-ON Only

CHARACTERISTICS CURVES

Fig.1 Forword Current Fig.2 Collector Power Dissiption

vs. Ambient Temperature

Fig.4 Forward Current vs. Forward

Fig.5 Current Transfer Ratio vs.

Forward Current Fig.6 Collector C urrent vs.

Collector-emitt er Voltage

F

FCE

F

0-30

Ta= 75 C

50 C 25 C

0 C

-25 C

V = 5V

T a= 25 C

CE T a= 25 C

I = 30mA

Pc(MAX.)

5mA

F

10mA

20mA

vs. Ambie nt Temperatute

Collector-emitter voltage V (V)

Forward voltage V (V)

Ambient temperature Ta ( C)Ambient temperature Ta ( C)

Forward current I (mA)

Collector Power dissipation Pc (mW)

Forward current I (mA)

Current transfer ratio CTR (%)

Collector current Ic (mA)

Fig.3 Collector-emitter Saturation

Voltage vs. Forward Current

F

CE

Ic=0.5mA

1mA

3mA

7mA

5mA

Ta= 25 C

Collecotr-emitter saturation voltage

V (sat) (V)

Forward current I (mA)

Voltage

o

O

o

oo

o

0 255075100125 0-30 12525 50 75 100

10

20

30

40

50

60

0

50

100

150

200

0

1

0

015

1

2

3

4

5

6

0.5 1.0 1.5 2.0 2.5 3.0

2

5

10

20

50

100

200

500

01002 5 10 20 50

20

40

60

80

100

120

140

160

180

200

123456789

10

20

30

105

5

15

25

Part No. : LTV817 / 827 / 847 (M, S, STA1) -V Page : 13 of 15

BNS-OD-C131/A4

LITE-ON TECHNOLOGY CORPORATION

Property of LITE-ON Only

CHARACTERISTICS CURVES

R = 10k

L1k 100

tr

tf

td

ts

Fig.8 Collector-emitter Saturation Voltage

Fig.9 Collector Dark Current vs.

Ambient Temperature Fig.10 Response Time vs. Load

Fig.11 Frequency Response

L

CEO

0-30

CE

V = 2V

Ic= 2mA

Ta= 25 C

CE

I = 5mA

V = 5V

CE

FF

Ic= 1mA

I = 20mA

CE

V = 2V

Ic= 2mA

Ta= 25 C

vs. Ambient Temperature

A mbient temperature Ta ( C)

Load resistance R (k )

A mbient temperature Ta ( C)

Freque ncy f (kHz)

Response time ( s)

Relative current transfer ratio (%)

Collector dark current I (A)

Voltage gain Av (dB)

Collector-emitter saturation voltage

V (sat) (V)

-10

o

oo

o

0 255075100

50

100

150

-25

0 0 255075100

10 -25 0.2

0.050 255075100

10

-9

-8

-7

-6

-5

-11

0.1 0.2 0.5 1 2 5 10

0.5

1

2

5

10

20

50

100

200

500

0.5

20

10

0

2 10 100 500

Resistance

Fig.7 Relative Current Transfer Ratio

vs. Ambient Temperature

0.02

0.04

0.06

0.08

0.10

0.12

0.14

0.16

152050

CE

V = 20V

Vcc

Test Circuit for Frequency Response

Test Circuit for Response Time

RD

Input RDRL

L

Vcc

ROutput

td

Output

Input

tr tf

ts 90%

10%

Part No. : LTV817 / 827 / 847 (M, S, STA1) -V Page : 14 of 15

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Property of LITE-ON Only

RECOMMENDED FOOT PRINT PATTERNS (MOUNT PAD)

Unit : mm

4 PIN 8 PIN

16 PIN

Part No. : LTV817 / 827 / 847 (M, S, STA1) -V Page : 15 of 15

BNS-OD-C131/A4