2N3571 Transistors
Bipolar NPN UHF/Microwave Transisitor
Military/High-RelN
V(BR)CEO (V)
V(BR)CBO (V)25
I(C) Max. (A)50m
Absolute Max. Power Diss. (W)200m
Minimum Operating Temp (øC)
Maximum Operating Temp (øC)175þ
I(CBO) Max. (A)
@V(CBO) (V) (Test Condition)
h(FE) Max. Current gain.
@I(C) (A) (Test Condition)
@V(CE) (V) (Test Condition)
f(T) Min. (Hz) Transition Freq
@I(C) (A) (Test Condition)
@V(CE) (V) (Test Condition)
Power Gain Min. (dB)
@I(C) (A) (Test Condition)
@V(CE) (V) (Test Condition)
@Freq. (Hz) (Test Condition)
Noise Figure Min. (dB)4.0
@I(C) (A) (Test Condition)2.0m¤
@V(CE) (V) (Test Condition)6.0
@Freq. (Hz) (Test Condition)450M
Semiconductor MaterialSilicon
Package StyleTO-72
Mounting StyleT
Pinout Equivalence Code4-20
Ckt. (Pinout) NumberTR00400020
Description