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Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON
Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s
technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA
Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended
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is an Equal Opportunity/Afrmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
©2002 Fairchild Semiconductor Corporation Rev. A4, November 2002
SS9018
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings Ta=25°C unless otherwise noted
Electrical Characteristics Ta=25°C unless otherwise noted
hFE Classification
Symbol Parameter Ratings Units
VCBO Collector-Base Voltage 30 V
VCEO Collector-Emitter Voltage 15 V
VEBO Emitter-Base Voltage 5 V
ICCollector Current 50 mA
PCCollector Power Dissipation 400 mW
TJJunction Temperature 150 °C
TSTG Storage Tem perature -55 ~ 150 °C
Symbol Parame ter Test Condition Min. Typ. Max. Units
BVCBO Collect or-B ase Break down Vo ltag e IC =100µA, IE =0 30 V
BVCEO Collect or-E mitter Break down Volt age IC =1.0mA, IB =0 15 V
BVEBO E mitter-B ase Break down Voltage IE =100µA, IC =0 5 V
ICBO Collector Cut-off Current VCB =12V, IE =0 50 nA
hFE Emitter Cut-off Current VCE =5V, IC =1.0mA 28 100 198
VCE (sat) Collector-Emitter Saturat ion Voltage IC =10mA, IB =1mA 0.5 V
Cob Output Capacitance VCB =10V, IE =0
f=1MHz 1.3 1.7 pF
fTCurrent Gain Bandwidth Product VCE =5V, IC =5mA 700 1100 MHz
Classification D E F G H I
hFE 28 ~ 45 39 ~ 60 54 ~ 80 72 ~ 108 97 ~ 146 132 ~ 198
SS9018
AM/FM Amplifier, Local Oscillator of
FM/VHF Tuner
High Current Gain Bandwidth Product fT=1.1 GHz (Typ)
1. Emitter 2. Base 3. Collector
TO-92
1
©2002 Fairchild Semiconductor Corporation
SS9018
Rev. A4, November 2002
Typical Characteristics
Figure 1. Static Characteristic Figure 2. DC current Gain
Figure 3. Base-Emitter Saturation Vo ltage
Collector-Emitter Saturation Voltage Figur e 4. Output Capacitanc e
Figure 5. Current Gain Bandwidth Product
012345678910
0
1
2
3
4
5
6
7
8
9
10
IB = 80
µ
A
IB = 70
µ
A
IB = 60
µ
A
IB = 50
µ
A
IB = 40
µ
A
IB = 30
µ
A
IB = 20
µ
A
IB = 10
µ
A
IB = 90µA
IC[mA], COLLECTOR CURRENT
VCE[V], CO LLE CTOR -EMITT ER VO LTAGE
110
10
100
1000
VCE = 5 V
hFE, DC CURRENT GAIN
IC[mA], COLLECTOR CURRENT
0.1 1 10
0.01
0.1
1
10
IC = 10 IB
VCE(sat)
VBE(sat)
VBE(sat), VCE(sat)[V], SATURATION VOLTAGE
IC[mA], CO LLECTOR CURRENT
1 10 100
0.1
1
10
f = 1MHz
IE = 0
Cob[pF], CAPACITANCE
VCB[V], COLLECTOR-BASE VOLTAGE
0.1 1 10
100
1000
VCE = 5V
fT[MHz], CURRENT GAIN-BANDWIDTH PRODUCT
IC[mA], COLLECTOR CURRENT
www.onsemi.com
1
ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/PatentMarking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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