CDi saigensc SILICON PLANAR EPITAXIAL HIGH-SPEED DIODES Silicon planar epitaxial high-speed diodes PACKAGE OUTLINE DETAILS Marking ALL DIMENSIONS IN mm BAS19 = A8 BAS20 = A81 BAS21 = A82 Pin configuration 1 = ANODE 2= NC 3 = CATHODE ABSOLUTE MAXIMUM RATINGS BAS19 BAS20 BAS21 Continuous reverse voltage VR max. 100 150 | 200 V Repetitive peak reverse voltage VRRM max. 120 200 ; 250 V Repetitive peak forward current IpRM max. 625 mA Junction temperature Tj max. 150 C Forward voltage at Ip = 100 mA VE < 1 Vv Reverse recovery time when switched from lp = 30mA to Ip = 30mA; Ry, = 100Q ter < 75 ns measured at lp =3 mA RATINGS (at Ta = 25C unless otherwise noted) Limiting values BAS19 BAS20 BAS21 Continuous reverse voltage VR max. 100 | 150 | 200 V Repetitive peak reverse voltage VRRM max. 120 200 | 250 V CDIL sens Non-repetitive peak forvard current (per crystal) t=1 ys IgsM max. 2,5 A t=1s IfSsM max. 0,5 A Average rectified forward current (averaged over any 20 ms period) TRAV) max. 200 mA Forward current (DC) up to Tamb = 25 C* Ip max. 200 mA Repetitive peak forward current IFRM max. 625 mA Storage temperature range Tstg -55to+150 C Junction temperature T; max. 150 C Total power dissipation up to Tampb = 25 C Ptot max. 250 mW THERMAL RESISTANCE From junction to ambient Rth jra = 500 K/W CHARACTERISTICS Tj = 25 C unless otherwise specified. Forward voltage Ip = 100 mA VE < 1.0 V Ip = 200 mA VE < 1.25 V Reverse breakdown voltage BAS19; IR = 100 pA** V(BR)R > 120 V BAS20; Ip = 100 pA V(BR)R > 200 V BAS21; IR = 100 pA*** V(BR)R > 250 V . Reverse current VR = VRmax IR < 100 nA VR = VRmax: Tj = 150 C Ir < 100 pA Differential resistance Ip = 10 mA Tdiff typ. 5 Q Mounted on a ceramic substrate of 8 mm x 10 mm x 0.7 mm. Measured under pulse conditions; pulse time = tp = 0.3 ms. At zero life time measured under pulse conditions to avoid excessive dissipation and voltage limited to 275 V. 4