2SA1300 - Transys Electronics - Datasheet.Support

TO-92 Plastic-Encapsulated Transistors

2SA1300 TRANSISTOR (PNP)

FEATURES

Power dissipation

PCM : 0.75 W (Tamb=25℃)

Collector current

ICM : -2 A

Collector-base voltage

V(BR)CBO : -20 V

Operating and storage junction temperature range

TJ : 150℃

Tstg: -55℃ to +150℃

ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)

Parameter Symbol Test conditions MIN MAX UNIT

Collector-base breakdown voltage V(BR)CBO Ic= -1mA , IE=0 -20 V

Collector-emitter breakdown voltage V(BR)CEO I

C=-10mA , IB=0 -10 V

E mitter-base break down vo lt age V(BR)EBO I

E=-1mA, IC=0 -6 V

Collector cut-off current ICBO V

CB=-20 V , IE=0 -0.1

µA

E mitte r cut-off current IEBO V

EB=-6 V , IC=0 -0.1

µA

DC current gain hFE VCE=-1V, IC=-0.5A 140 600

Collector-emitter saturat ion voltage VCE(sat) I

C=-2A, IB= -10 0mA -0.5 V

Base-emitter volt age VBE I

C= -2A, VCE=-1V -1.5 V

Transition fre quency f T

VCE=-1V, IC= -0. 5A

f = 30MHz 100 MHz

CLASSIFICATION OF hFE

Rank Y GR BL

Range 140-280 200-400 300-600

1 2 3

TO-92

1. E MITTER

2. COLLECTOR

3. BASE

Transys

Electronics

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