Transys Electronics L I M I T E D TO-92 Plastic-Encapsulated Transistors 2SA1300 TRANSISTOR (PNP) TO-92 FEATURES Power dissipation PCM : 0.75 W (Tamb=25) Collector current A ICM : -2 Collector-base voltage V V(BR)CBO : -20 Operating and storage junction temperature range 1. EMITTER 2. COLLECTOR 3. BASE 1 2 3 TJ : 150 Tstg: -55 to +150 ELECTRICAL CHARACTERISTICS (Tamb=25 Parameter unless otherwise specified) Symbol Test conditions MIN MAX UNIT Collector-base breakdown voltage V(BR)CBO Ic=-1mA , IE=0 -20 V Collector-emitter breakdown voltage V(BR)CEO IC=-10mA , IB=0 -10 V Emitter-base breakdown voltage V(BR)EBO IE=-1mA, IC=0 -6 V Collector cut-off current ICBO VCB=-20 V , IE=0 -0.1 A Emitter cut-off current IEBO VEB=-6 V , -0.1 A DC current gain hFE VCE=-1V, IC=-0.5A VCE(sat) IC=-2A, IB= -100mA -0.5 V VBE IC= -2A, VCE=-1V -1.5 V Collector-emitter saturation voltage Base-emitter voltage IC=0 140 600 VCE=-1V, IC= -0.5A fT Transition frequency 100 MHz f = 30MHz CLASSIFICATION OF hFE Rank Range Y GR BL 140-280 200-400 300-600