DATA SH EET
Product specification
Supersedes data of 2001 Aug 24 2004 Jan 28
INTEGRATED CIRCUITS
TDA1519C
22 W BTL or 2 × 11 W
stereo power amplifier
2004 Jan 28 2
Philips Semiconductors Product specification
22 W BTL or 2 × 11 W
stereo power amplifier TDA1519C
FEATURES
•Requires very few external components for Bridge-Tied
Load (BTL) operation
•Stereo or BTL application
•High output power
•Low offset voltage at output (important for BTL
applications)
•Fixed gain
•Good ripple rejection
•Mute/standby switch
•Load dump protection
•AC and DC short-circuit safe to ground and VP
•Thermally protected
•Reverse polarity safe
•Capability to handle high energy on outputs (VP=0V)
•No switch-on/switch-off plops
•Protected against electrostatic discharge
•Low thermal resistance
•Identical inputs (inverting and non-inverting)
•Pin compatible with TDA1519B (TDA1519C and
TDA1519CSP).
GENERAL DESCRIPTION
The TDA1519C is an integrated class-B dual output
amplifierina9-lead plastic single in-line power package or
20-lead heatsink small outline package.
For the TDA1519CTH (SOT418-3), the heatsink is
positioned on top of the package, which allows an external
heatsink to be mounted on top. The heatsink of the
TDA1519CTD (SOT397-1) is facing the PCB, allowing the
heatsink to be soldered onto the copper area of the PCB.
ORDERING INFORMATION
TYPE NUMBER PACKAGE
NAME DESCRIPTION VERSION
TDA1519C SIL9P plastic single in-line power package; 9 leads SOT131-2
TDA1519CSP SMS9P plastic surface mounted single in-line power package; 9 leads SOT354-1
TDA1519CTD HSOP20 plastic, heatsink small outline package; 20 leads SOT397-1
TDA1519CTH HSOP20 plastic, heatsink small outline package; 20 leads; low stand-off height SOT418-3
2004 Jan 28 3
Philips Semiconductors Product specification
22 W BTL or 2 × 11 W
stereo power amplifier TDA1519C
QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
Supply
VPsupply voltage operating 6.0 14.4 17.5 V
non-operating −−30 V
load dump protected −−45 V
IORM repetitive peak output current −−4A
Iq(tot) total quiescent current −40 80 mA
Istb standby current −0.1 100 µA
Isw(on) switch-on current −−40 µA
Inputs
Ziinput impedance BTL 25 −−kΩ
stereo 50 −−kΩ
Stereo application
Pooutput power THD = 10 %
RL=4Ω−6−W
RL=2Ω−11 −W
αcs channel separation 40 −−dB
Vn(o)(rms) noise output voltage (RMS value) −150 −µV
BTL application
Pooutput power THD = 10 %; RL=4Ω−22 −W
SVRR supply voltage ripple rejection RS=0Ω
fi= 100 Hz 34 −−dB
fi= 1 to 10 kHz 48 −−dB
∆VOODC output offset voltage −−250 mV
Tjjunction temperature −−150 °C
2004 Jan 28 4
Philips Semiconductors Product specification
22 W BTL or 2 × 11 W
stereo power amplifier TDA1519C
BLOCK DIAGRAM
Fig.1 Block diagram.
MGL491
handbook, full pagewidth
60
kΩ
input
reference
voltage power
ground
(substrate)
+
+
−
5
signal
ground
2 7
9
6
183
Ω
18.1 kΩ
3
TDA1519C
TDA1519CSP
15 kΩ
15 kΩ
VA
VA
Cm
mute switch
power stage
60
kΩ
standby
reference
voltage
mute
reference
voltage
1
NINV
RR
INV
OUT2
M/SS
OUT1
GND1 GND2VP
4
8
183
Ω
18.1 kΩ
VA
Cm
mute switch
power stage
+
−
mute
switch
standby
switch
× 1
VP
The pin numbers refer to the TDA1519C and TDA1519CSP only, for TDA1519CTD and TDA1519CTH see Figs 3 and 4.
2004 Jan 28 5
Philips Semiconductors Product specification
22 W BTL or 2 × 11 W
stereo power amplifier TDA1519C
PINNING
SYMBOL PIN DESCRIPTION
TDA1519C;
TDA1519CSP TDA1519CTD TDA1519CTH
NINV 1 19 19 non-inverting input
GND1 2 20 20 ground 1 (signal)
RR 3 1 1 supply voltage ripple rejection
OUT1 4 3 3 output 1
GND2 5 5 5 ground 2 (substrate)
OUT2 6 8 8 output 2
VP7 10 10 positive supply voltage
M/SS 8 11 11 mute/standby switch input
INV 9 12 12 inverting input
n.c. −2, 4, 6, 7, 9 and 13 to 18 2, 4, 6, 7, 9 and 13 to 18 not connected
Fig.2 Pin configuration
TDA1519C and
TDA1519CSP.
h
alfpage
NINV
GND1
RR
OUT1
GND2
OUT2
VP
M/SS
INV
1
2
3
4
5
6
7
8
9
TDA1519C
TDA1519CSP
MGR561
f
page
RR
n.c.
OUT1
n.c.
GND2
n.c.
n.c.
OUT2
n.c.
VP
GND1
NINV
n.c.
n.c.
n.c.
n.c.
n.c.
n.c.
INV
M/SS
1
2
3
4
5
6
7
8
9
10 11
12
20
19
18
17
16
15
14
13
TDA1519CTD
MGL937
Fig.3 Pin configuration
TDA1519CTD.
TDA1519CTH
GND1 RR
NINV n.c.
n.c. OUT1
n.c. n.c.
n.c. GND2
n.c. n.c.
n.c. n.c.
n.c. OUT2
INV n.c.
M/SS VP
001aaa348
20
19
18
17
16
15
14
13
12
11
9
10
7
8
5
6
3
4
1
2
Fig.4 Pin configuration
TDA1519CTH.
2004 Jan 28 6
Philips Semiconductors Product specification
22 W BTL or 2 × 11 W
stereo power amplifier TDA1519C
FUNCTIONAL DESCRIPTION
The TDA1519C contains two identical amplifiers with
differential input stages. The gain of each amplifier is fixed
at 40 dB. A special feature of this device is the
mute/standby switch which has the following features:
•Low standby current (<100 µA)
•Low mute/standby switching current (allows for low-cost
supply switch)
•Mute condition.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VPsupply voltage operating −17.5 V
non-operating −30 V
load dump protected;
during 50 ms; tr≥2.5 ms −45 V
Vsc AC and DC short-circuit-safe voltage −17.5 V
Vrp reverse polarity voltage −6V
Eoenergy handling capability at outputs VP=0V −200 mJ
IOSM non-repetitive peak output current −6A
IORM repetitive peak output current −4A
Ptot total power dissipation see Fig.5 −25 W
Tjjunction temperature −150 °C
Tstg storage temperature −55 +150 °C
Fig.5 Power derating curve for TDA1519C.
handbook, halfpage
−25 0 50 150
30
10
0
20
MGL492
100
Ptot
(W)
Tamb (°C)
(1)
(2)
(3)
(1) Infinite heatsink.
(2) Rth(c-a) = 5 K/W.
(3) Rth(c-a) = 13 K/W.
2004 Jan 28 7
Philips Semiconductors Product specification
22 W BTL or 2 × 11 W
stereo power amplifier TDA1519C
THERMAL CHARACTERISTICS
DC CHARACTERISTICS
VP= 14.4 V; Tamb =25°C; measured in circuit of Fig.6; unless otherwise specified.
Notes
1. The circuit is DC adjusted at VP= 6 to 17.5 V and AC operating at VP= 8.5 to 17.5 V.
2. At VP= 17.5 to 30 V, the DC output voltage is ≤0.5VP.
SYMBOL PARAMETER CONDITIONS VALUE UNIT
Rth(j-a) thermal resistance from junction to ambient;
TDA1519C, TDA1519CTH and TDA1519CTD in free air 40 K/W
Rth(j-c) thermal resistance from junction to case;
TDA1519C, TDA1519CTH and TDA1519CTD 3 K/W
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
Supply
VPsupply voltage note 1 6.0 14.4 17.5 V
Iq(tot) total quiescent current −40 80 mA
VODC output voltage note 2 −6.95 −V
∆VOODC output offset voltage −−250 mV
Mute/standby switch
Vsw(on) switch-on voltage level 8.5 −−V
Vmute mute voltage level 3.3 −6.4 V
Vstb standby voltage level 0 −2V
Mute/standby condition
Vooutput voltage mute mode; Vi= 1 V (maximum);
fi=20Hzto15kHz −−20 mV
∆VOODC output offset voltage mute mode −−250 mV
Istb standby current standby mode −−100 µA
Isw(on) switch-on current −12 40 µA
2004 Jan 28 8
Philips Semiconductors Product specification
22 W BTL or 2 × 11 W
stereo power amplifier TDA1519C
AC CHARACTERISTICS
VP= 14.4 V; RL=4Ω; f = 1 kHz; Tamb =25°C; unless otherwise specified.
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
Stereo application (see Fig.6)
Pooutput power note 1
THD = 0.5 % 4 5 −W
THD = 10 % 5.5 6.0 −W
RL=2Ω; note 1
THD = 0.5 % 7.5 8.5 −W
THD = 10 % 10 11 −W
THD total harmonic distortion Po=1W −0.1 −%
fro(l) low frequency roll-off −3 dB; note 2 −45 −Hz
fro(h) high frequency roll-off −1dB 20 −−kHz
Gv(cl) closed-loop voltage gain 39 40 41 dB
SVRR supply voltage ripple rejection on; notes 3 and 4 40 −−dB
on; notes 3 and 5 45 −−dB
mute; notes 3 and 6 45 −−dB
standby; notes 3
and 6 80 −−dB
Ziinput impedance 50 60 75 kΩ
Vn(o)(rms) noise output voltage (RMS value) note 7
on; RS=0Ω−150 −µV
on; RS=10kΩ− 250 500 µV
mute; note 8 −120 −µV
αcs channel separation RS=10kΩ40 −−dB
∆Gv(ub)channel unbalance −0.1 1 dB
BTL application (see Fig.7)
Pooutput power note 1
THD = 0.5 % 15 17 −W
THD = 10 % 20 22 −W
VP= 13.2 V; note 1
THD = 0.5 % −13 −W
THD=10% −17.5 −W
THD total harmonic distortion Po=1W −0.1 −%
Bppower bandwidth THD = 0.5 %;
Po=−1 dB; with
respect to 15 W
−35 to 15000 −Hz
fro(l) low frequency roll-off −1 dB; note 2 −45 −Hz
fro(h) high frequency roll-off −1dB 20 −−kHz
Gv(cl) closed-loop voltage gain 45 46 47 dB
2004 Jan 28 9
Philips Semiconductors Product specification
22 W BTL or 2 × 11 W
stereo power amplifier TDA1519C
Notes
1. Output power is measured directly at the output pins of the device.
2. Frequency response externally fixed.
3. Ripple rejection measured at the output with a source impedance of 0 Ω (maximum ripple amplitude of 2 V).
4. Frequency f = 100 Hz.
5. Frequency between 1 and 10 kHz.
6. Frequency between 100 Hz and 10 kHz.
7. Noise voltage measured in a bandwidth of 20 Hz to 20 kHz.
8. Noise output voltage independent of RS (Vi= 0 V).
SVRR supply voltage ripple rejection on; notes 3 and 4 34 −−dB
on; notes 3 and 5 48 −−dB
mute; notes 3 and 6 48 −−dB
standby;
notes 3 and 6 80 −−dB
Ziinput impedance 25 30 38 kΩ
Vn(o)(rms) noise output voltage (RMS value) note 7
on; RS=0Ω−200 −µV
on; RS=10kΩ− 350 700 µV
mute; note 8 −180 −µV
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
2004 Jan 28 10
Philips Semiconductors Product specification
22 W BTL or 2 × 11 W
stereo power amplifier TDA1519C
APPLICATION INFORMATION
Fig.6 Stereo application diagram (TDA1519C).
handbook, full pagewidth
2200
µF
1000
µF
100 µF100
nF
220 nF 60 kΩ
input
reference
voltage
40 dB
+
−
1220 nF
60 kΩ
40 dB
−
+
9
546
inverting inputnon-inverting input
internal
1/2 VP
VP
power
ground
2
signal
ground
TDA1519C
38
7
standby switch
MGL493
Fig.7 BTL application diagram (TDA1519C).
handbook, full pagewidth
2200
µF
100
nF
220 nF 60 kΩ
RL = 4 Ω
input
reference
voltage
40 dB
+
−
160 kΩ
40 dB
−
+
9
546
non-inverting input
to pin 9
internal
1/2 VP
VP
power
ground
2
signal
ground
TDA1519C
38
7
standby switch
MGL494
to pin 1
2004 Jan 28 11
Philips Semiconductors Product specification
22 W BTL or 2 × 11 W
stereo power amplifier TDA1519C
Fig.8 Total quiescent current as a function of the supply voltage.
handbook, halfpage
020
60
30
40
50
MGR539
4 8 12 16
Iq(tot)
(mA)
VP (V)
Fig.9 Output power as a function of the supply voltage.
handbook, halfpage
020
30
0
10
20
MGR540
4 8 12 16
Po
(W)
VP (V)
THD = 10%
0.5%
BTL application.
RL=4Ω.
fi= 1 kHz.
2004 Jan 28 12
Philips Semiconductors Product specification
22 W BTL or 2 × 11 W
stereo power amplifier TDA1519C
Fig.10 Total harmonic distortion as a function of the output power.
handbook, halfpage
12
0
10−111010
2
MGR541
4
8
THD
(%)
Po (W)
BTL application.
RL=4Ω.
fi= 1 kHz.
handbook, halfpage
0.6
010 102103104
MGU377
0.2
0.4
THD
(%)
fi (Hz)
Fig.11 Total harmonic distortion as a function of the operating frequency.
BTL application.
RL=4Ω.
Po=1W.
2004 Jan 28 13
Philips Semiconductors Product specification
22 W BTL or 2 × 11 W
stereo power amplifier TDA1519C
PACKAGE OUTLINES
UNIT A b
max. b
p2
cD
(1)
E
(1)
Z
(1)
deD
h
Lj
REFERENCES
OUTLINE
VERSION EUROPEAN
PROJECTION ISSUE DATE
IEC JEDEC JEITA
mm 4.6
4.4 1.1 0.75
0.60 0.48
0.38 24.0
23.6 20.0
19.6 10 2.54
12.2
11.8 3.4
3.1
A
max.
1
2
E
h
62.00
1.45
2.1
1.8
DIMENSIONS (mm are the original dimensions)
Note
1. Plastic or metal protrusions of 0.25 mm maximum per side are not included.
17.2
16.5
SOT131-2 99-12-17
03-03-12
0 5 10 mm
scale
Q
0.25
w
0.03
x
D
L
A
E
c
A2
Q
w
M
b
p
d
D
Ze
xh
19
Eh
non-concave
seating plane
1
b
j
SIL9P: plastic single in-line power package; 9 leads SOT131-2
view B: mounting base side
B
2004 Jan 28 14
Philips Semiconductors Product specification
22 W BTL or 2 × 11 W
stereo power amplifier TDA1519C
UNIT A A1A2A3bpcD
(1)
E
(1)
Z
(1)
deDhEhLp
L
REFERENCES
OUTLINE
VERSION EUROPEAN
PROJECTION ISSUE DATE
IEC JEDEC JEITA
mm 4.9
4.2 0.35
0.05 4.6
4.4 0.25 0.75
0.60 24.0
23.6
0.48
0.38 10
20.0
19.6 12.2
11.8 2.54 3.4
2.8 2.1
1.9
63°
0°
2.00
1.45
3.4
3.1
DIMENSIONS (mm are the original dimensions)
Note
1. Plastic or metal protrusions of 0.25 mm maximum per side are not included.
7.4
6.6
SOT354-1
0 5 10 mm
scale
Q
j
0.15
wxy θ
D
c
A1Q
heatsink
heatsink
θ
A
Lp
(A3)
A2
0.030.25
w
M
b
p
d
Dh
Ze
x
91
j
Eh
non-concave
99-12-17
03-03-12
SMS9P: plastic surface mounted single in-line power package; 9 leads SOT354-1
L
E
y
2004 Jan 28 15
Philips Semiconductors Product specification
22 W BTL or 2 × 11 W
stereo power amplifier TDA1519C
UNIT A1
REFERENCES
OUTLINE
VERSION EUROPEAN
PROJECTION ISSUE DATE
03-02-18
03-07-23
IEC JEDEC JEITA
mm 0.3
0.1
3.6 0.35
DIMENSIONS (mm are the original dimensions)
Note
1. Plastic or metal protrusions of 0.25 mm maximum per side are not included.
SOT397-1
0 5 10 mm
scale
HSOP20: plastic, heatsink small outline package; 20 leads SOT397-1
A
max.
D
yHE
A1A4
A2
bp
(A3)
E
c
v
M
A
X
A
Lp
detail X
θ
A
Q
w
M
Z
D1D2
E2
E1
e
110
20 11
pin 1 index
A2
3.3
3.0
A4
0.1
0
D2
1.1
0.9
HE
14.5
13.9
Lp
1.1
0.8
Q
1.5
1.4 2.5
2.0
v
0.25
w
0.25
yZ
8°
0°
θ
0.1
D1
13.0
12.6
E1
6.2
5.8
E2
2.9
2.5
bpc
0.32
0.23
e
1.27
D
(1)
16.0
15.8
E
(1)
11.1
10.9
0.53
0.40
A3
2004 Jan 28 16
Philips Semiconductors Product specification
22 W BTL or 2 × 11 W
stereo power amplifier TDA1519C
UNIT A4
(1)
REFERENCES
OUTLINE
VERSION EUROPEAN
PROJECTION ISSUE DATE
IEC JEDEC JEITA
mm +0.08
−0.04
3.5 0.35
DIMENSIONS (mm are the original dimensions)
Notes
1. Limits per individual lead.
2. Plastic or metal protrusions of 0.25 mm maximum per side are not included.
SOT418-3
0 5 10 mm
scale
HSOP20: plastic, heatsink small outline package; 20 leads; low stand-off height SOT418-3
A
max.
detail X
A2
3.5
3.2
D2
1.1
0.9
HE
14.5
13.9
Lp
1.1
0.8
Q
1.7
1.5 2.5
2.0
v
0.25
w
0.25
yZ
8°
0°
θ
0.07
x
0.03
D1
13.0
12.6
E1
6.2
5.8
E2
2.9
2.5
bpc
0.32
0.23
e
1.27
D
(2)
16.0
15.8
E
(2)
11.1
10.9
0.53
0.40
A3
A4
A2(A3)
Lpθ
A
Q
D
y
x
HE
E
c
v
M
A
X
A
bpw
M
Z
D1D2
E2
E1
e
20 11
110
pin 1 index
02-02-12
03-07-23
2004 Jan 28 17
Philips Semiconductors Product specification
22 W BTL or 2 × 11 W
stereo power amplifier TDA1519C
SOLDERING
Introduction
Thistextgivesaverybriefinsighttoacomplex technology.
A more in-depth account of soldering ICs can be found in
our
“Data Handbook IC26; Integrated Circuit Packages”
(document order number 9398 652 90011).
There is no soldering method that is ideal for all IC
packages. Wave soldering is often preferred when
through-holeandsurfacemountcomponentsaremixedon
one printed-circuit board. Wave soldering can still be used
for certain surface mount ICs, but it is not suitable for fine
pitch SMDs. In these situations reflow soldering is
recommended. Driven by legislation and environmental
forces the worldwide use of lead-free solder pastes is
increasing.
Through-hole mount packages
SOLDERING BY DIPPING OR BY SOLDER WAVE
Typical dwell time of the leads in the wave ranges from
3 to 4 seconds at 250 °C or 265 °C, depending on solder
material applied, SnPb or Pb-free respectively.
Thetotalcontact timeof successivesolderwaves mustnot
exceed 5 seconds.
The device may be mounted up to the seating plane, but
the temperature of the plastic body must not exceed the
specified maximum storage temperature (Tstg(max)). If the
printed-circuit board has been pre-heated, forced cooling
may be necessary immediately after soldering to keep the
temperature within the permissible limit.
MANUAL SOLDERING
Apply the soldering iron (24 V or less) to the lead(s) of the
package, either below the seating plane or not more than
2 mm above it. If the temperature of the soldering iron bit
is less than 300 °C it may remain in contact for up to
10 seconds. If the bit temperature is between
300 and 400 °C, contact may be up to 5 seconds.
Surface mount packages
REFLOW SOLDERING
Reflow soldering requires solder paste (a suspension of
fine solder particles, flux and binding agent) to be applied
tothe printed-circuit boardbyscreen printing, stencillingor
pressure-syringe dispensing before package placement.
Several methods exist for reflowing; for example,
convection or convection/infrared heating in a conveyor
type oven. Throughput times (preheating, soldering and
cooling) vary between 100 and 200 seconds depending
on heating method.
Typical reflow peak temperatures range from
215 to 270 °C depending on solder paste material. The
top-surface temperature of the packages should
preferably be kept:
•below 225 °C (SnPb process) or below 245 °C (Pb-free
process)
– for all the BGA, HTSSON..T and SSOP-T packages
– for packages with a thickness ≥2.5 mm
– for packages with a thickness < 2.5 mm and a
volume ≥350 mm3 so called thick/large packages.
•below 240 °C (SnPb process) or below 260 °C (Pb-free
process) for packages with a thickness < 2.5 mm and a
volume < 350 mm3 so called small/thin packages.
Moisture sensitivity precautions, as indicated on packing,
must be respected at all times.
WAVE SOLDERING
Conventional single wave soldering is not recommended
forsurfacemount devices(SMDs) orprinted-circuitboards
with a high component density, as solder bridging and
non-wetting can present major problems.
To overcome these problems the double-wave soldering
method was specifically developed.
If wave soldering is used the following conditions must be
observed for optimal results:
•Use a double-wave soldering method comprising a
turbulent wave with high upward pressure followed by a
smooth laminar wave.
•For packages with leads on two sides and a pitch (e):
– larger than or equal to 1.27 mm, the footprint
longitudinal axis is preferred to be parallel to the
transport direction of the printed-circuit board;
– smaller than 1.27 mm, the footprint longitudinal axis
must be parallel to the transport direction of the
printed-circuit board.
The footprint must incorporate solder thieves at the
downstream end.
•Forpackageswith leadson foursides,the footprintmust
be placed at a 45°angle to the transport direction of the
printed-circuit board. The footprint must incorporate
solder thieves downstream and at the side corners.
During placement and before soldering, the package must
be fixed with a droplet of adhesive. The adhesive can be
2004 Jan 28 18
Philips Semiconductors Product specification
22 W BTL or 2 × 11 W
stereo power amplifier TDA1519C
applied by screen printing, pin transfer or syringe dispensing. The package can be soldered after the adhesive is cured.
Typical dwell time of the leads in the wave ranges from 3 to 4 seconds at 250 °C or 265 °C, depending on solder material
applied, SnPb or Pb-free respectively.
A mildly-activated flux will eliminate the need for removal of corrosive residues in most applications.
MANUAL SOLDERING
Fix the component by first soldering two diagonally-opposite end leads. Use a low voltage (24 V or less) soldering iron
applied to the flat part of the lead. Contact time must be limited to 10 seconds at up to 300 °C. When using a dedicated
tool, all other leads can be soldered in one operation within 2 to 5 seconds between 270 and 320 °C.
Suitability of IC packages for wave, reflow and dipping soldering methods
Notes
1. Formore detailed informationon the BGApackages refer tothe
“(LF)BGAApplication Note
”(AN01026); orderacopy
from your Philips Semiconductors sales office.
2. All surface mount (SMD) packages are moisture sensitive. Depending upon the moisture content, the maximum
temperature (with respect to time) and body size of the package, there is a risk that internal or external package
cracks may occur due to vaporization of the moisture in them (the so called popcorn effect). For details, refer to the
Drypack information in the
“Data Handbook IC26; Integrated Circuit Packages; Section: Packing Methods”
.
3. For SDIP packages, the longitudinal axis must be parallel to the transport direction of the printed-circuit board.
4. Hot bar soldering or manual soldering is suitable for PMFP packages.
5. These transparent plastic packages are extremely sensitive to reflow soldering conditions and must on no account
be processed through more than one soldering cycle or subjected to infrared reflow soldering with peak temperature
exceeding 217 °C±10 °C measured in the atmosphere of the reflow oven. The package body peak temperature
must be kept as low as possible.
6. These packages are not suitable for wave soldering. On versions with the heatsink on the bottom side, the solder
cannot penetrate between the printed-circuit board and the heatsink. On versions with the heatsink on the top side,
the solder might be deposited on the heatsink surface.
7. If wave soldering is considered, then the package must be placed at a 45° angle to the solder wave direction.
The package footprint must incorporate solder thieves downstream and at the side corners.
MOUNTING PACKAGE(1) SOLDERING METHOD
WAVE REFLOW(2) DIPPING
Through-hole mount CPGA, HCPGA suitable −suitable
DBS, DIP, HDIP, RDBS, SDIP, SIL suitable(3) −−
Through-hole-
surface mount PMFP(4) not suitable not suitable −
Surface mount BGA, HTSSON..T(5), LBGA, LFBGA, SQFP,
SSOP-T(5), TFBGA, USON, VFBGA not suitable suitable −
DHVQFN, HBCC, HBGA, HLQFP, HSO,
HSOP, HSQFP, HSSON, HTQFP, HTSSOP,
HVQFN, HVSON, SMS
not suitable(6) suitable −
PLCC(7), SO, SOJ suitable suitable −
LQFP, QFP, TQFP not recommended(7)(8) suitable −
SSOP, TSSOP, VSO, VSSOP not recommended(9) suitable −
CWQCCN..L(11), PMFP(10), WQCCN32L(11) not suitable not suitable −
2004 Jan 28 19
Philips Semiconductors Product specification
22 W BTL or 2 × 11 W
stereo power amplifier TDA1519C
8. Wave soldering is suitable for LQFP, QFP and TQFP packages with a pitch (e) larger than 0.8 mm; it is definitely not
suitable for packages with a pitch (e) equal to or smaller than 0.65 mm.
9. Wave soldering is suitable for SSOP, TSSOP, VSO and VSSOP packages with a pitch (e) equal to or larger than
0.65 mm; it is definitely not suitable for packages with a pitch (e) equal to or smaller than 0.5 mm.
10. Hot bar or manual soldering is suitable for PMFP packages.
11. Image sensor packages in principle should not be soldered. They are mounted in sockets or delivered pre-mounted
on flex foil. However, the image sensor package can be mounted by the client on a flex foil by using a hot bar
soldering process. The appropriate soldering profile can be provided on request.
2004 Jan 28 20
Philips Semiconductors Product specification
22 W BTL or 2 × 11 W
stereo power amplifier TDA1519C
DATA SHEET STATUS
Notes
1. Please consult the most recently issued data sheet before initiating or completing a design.
2. The product status of the device(s) described in this data sheet may have changed since this data sheet was
published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.
3. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.
LEVEL DATA SHEET
STATUS(1) PRODUCT
STATUS(2)(3) DEFINITION
I Objective data Development This data sheet contains data from the objective specification for product
development. Philips Semiconductors reserves the right to change the
specification in any manner without notice.
II Preliminary data Qualification This data sheet contains data from the preliminary specification.
Supplementary data will be published at a later date. Philips
Semiconductors reserves the right to change the specification without
notice, in order to improve the design and supply the best possible
product.
III Product data Production This data sheet contains data from the product specification. Philips
Semiconductors reserves the right to make changes at any time in order
to improve the design, manufacturing and supply. Relevant changes will
be communicated via a Customer Product/Process Change Notification
(CPCN).
DEFINITIONS
Short-form specification The data in a short-form
specification is extracted from a full data sheet with the
same type number and title. For detailed information see
the relevant data sheet or data handbook.
Limiting values definition Limiting values given are in
accordance with the Absolute Maximum Rating System
(IEC 60134). Stress above one or more of the limiting
values may cause permanent damage to the device.
These are stress ratings only and operation of the device
atthese orat anyother conditionsabovethose givenin the
Characteristics sections of the specification is not implied.
Exposure to limiting values for extended periods may
affect device reliability.
Application information Applications that are
described herein for any of these products are for
illustrative purposes only. Philips Semiconductors make
norepresentationorwarranty thatsuchapplications willbe
suitable for the specified use without further testing or
modification.
DISCLAIMERS
Life support applications These products are not
designed for use in life support appliances, devices, or
systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips
Semiconductorscustomersusingor sellingtheseproducts
for use in such applications do so at their own risk and
agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Right to make changes Philips Semiconductors
reserves the right to make changes in the products -
including circuits, standard cells, and/or software -
described or contained herein in order to improve design
and/or performance. When the product is in full production
(status ‘Production’), relevant changes will be
communicated via a Customer Product/Process Change
Notification (CPCN). Philips Semiconductors assumes no
responsibility or liability for the use of any of these
products, conveys no licence or title under any patent,
copyright, or mask work right to these products, and
makes no representations or warranties that these
products are free from patent, copyright, or mask work
right infringement, unless otherwise specified.
© Koninklijke Philips Electronics N.V. 2004 SCA76
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Philips Semiconductors – a worldwide compan y
Contact information
For additional information please visit http://www.semiconductors.philips.com. Fax: +31 40 27 24825
For sales offices addresses send e-mail to: sales.addresses@www.semiconductors.philips.com.
Printed in The Netherlands R32/04/pp21 Date of release: 2004 Jan 28 Document order number: 9397 750 12599
