TIP31, TIP31A, TIP31B, TIP31C, (NPN), TIP32, TIP32A, TIP32B, TIP32C, (PNP) Complementary Silicon Plastic Power Transistors http://onsemi.com Designed for use in general purpose amplifier and switching applications. * Collector-Emitter Saturation Voltage - 3 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 40-60-80-100 VOLTS 40 WATTS VCE(sat) = 1.2 Vdc (Max) @ IC = 3.0 Adc * Collector-Emitter Sustaining Voltage VCEO(sus) = 40 Vdc (Min) - TIP31, TIP32 = 60 Vdc (Min) - TIP31A, TIP32A = 80 Vdc (Min) - TIP31B, TIP32B = 100 Vdc (Min) - TIP31C, TIP32C * High Current Gain - Bandwidth Product fT = 3.0 MHz (Min) @ IC = 500 mAdc MARKING DIAGRAM 4 * Compact TO-220 AB Package IIIIIIIIIIII III IIII III IIIIIIIIIIII III IIII III IIIIIIIIIIII III IIII III IIIIIIIIIIII III IIII III IIIIIIIIIIII III IIII III IIIIIIIIIIII III IIII III IIIIIIIIIIII III IIII III IIIIIIIIIIII III IIII III IIIIIIIIIIII III IIII III IIIIIIIIIIII III IIII III IIIIIIIIIIII III IIII III IIIIIIIIIIII III IIII III IIIIIIIIIIII III IIII III IIIIIIIIIIII III IIII III IIIIIIIIIIII III IIII III IIIIIIIIIIII III IIII III IIIIIIIIIIII III IIII III IIIIIIIIIIII III IIII III IIIIIIIIIIII III IIII III MAXIMUM RATINGS Rating Symbol Value Unit Collector-Emitter Voltage TIP31, TIP32 TIP31A, TIP32A TIP31B, TIP32B TIP31C, TIP32C VCEO 40 60 80 100 Vdc VCB 40 60 80 100 Vdc VEB 5.0 Vdc IC 3.0 5.0 Adc Base Current IB 1.0 Adc Total Power Dissipation @ TC = 25C Derate above 25C PD 40 0.32 Watts W/C Total Power Dissipation @ TA = 25C Derate above 25C PD 2.0 0.016 Watts W/C Unclamped Inductive Load Energy (Note 1) E 32 mJ TJ, Tstg - 65 to + 150 C Collector-Base Voltage TIP31, TIP32 TIP31A, TIP32A TIP31B, TIP32B TIP31C, TIP32C Emitter-Base Voltage Collector Current Continuous Peak Operating and Storage Junction Temperature Range AYWW TIPxxx 1 2 3 STYLE 1: PIN 1. 2. 3. 4. BASE COLLECTOR EMITTER COLLECTOR TO-220AB CASE 221A-09 STYLE 1 xxx A Y WW = Specific Device Code: 31, 31A, 31B, 31C, 32, 32A, 32B, 32C = Assembly Location = Year = Work Week ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 6 of this data sheet. 1. IC = 1.8 A, L = 20 mH, P.R.F. = 10 Hz, VCC = 10 V, RBE = 100 .. Semiconductor Components Industries, LLC, 2003 January, 2003 - Rev. 8 1 Publication Order Number: TIP31A/D TIP31, TIP31A, TIP31B, TIP31C, (NPN), TIP32, TIP32A, TIP32B, TIP32C, (PNP) IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIII IIIII IIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIII IIIII IIIII IIII IIIIIIIIIIIIIIIIIIIIII IIIII IIIII IIII IIIIIIIIIIIIIIIIIIIIII IIIII IIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to Ambient RJA 62.5 C/W Thermal Resistance, Junction to Case RJC 3.125 C/W ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) Characteristic Symbol Min Max Unit VCEO(sus) 40 60 80 100 - Vdc ICEO - 0.3 mAdc - 0.3 - 200 200 200 200 IEBO - 1.0 mAdc hFE 25 10 50 - VCE(sat) - 1.2 Vdc VBE(on) - 1.8 Vdc fT 3.0 - MHz hfe 20 - - OFF CHARACTERISTICS Collector-Emitter Sustaining Voltage (Note 2) (IC = 30 mAdc, IB = 0) TIP31, TIP32 TIP31A, TIP32A TIP31B, TIP32B TIP31C, TIP32C Collector Cutoff Current (VCE = 30 Vdc, IB = 0) TIP31, TIP32, TIP31A, TIP32A Collector Cutoff Current (VCE = 60 Vdc, IB = 0) TIP31B, TIP31C, TIP32B, TIP32C Collector Cutoff Current (VCE = 40 Vdc, VEB = 0) (VCE = 60 Vdc, VEB = 0) (VCE = 80 Vdc, VEB = 0) (VCE = 100 Vdc, VEB = 0) Adc ICES TIP31, TIP32 TIP31A, TIP32A TIP31B, TIP32B TIP31C, TIP32C Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0) ON CHARACTERISTICS (Note 2) DC Current Gain (IC = 1.0 Adc, VCE = 4.0 Vdc) DC Current Gain (IC = 3.0 Adc, VCE = 4.0 Vdc) Collector-Emitter Saturation Voltage (IC = 3.0 Adc, IB = 375 mAdc) Base-Emitter On Voltage (IC = 3.0 Adc, VCE = 4.0 Vdc) DYNAMIC CHARACTERISTICS Current-Gain - Bandwidth Product (IC = 500 mAdc, VCE = 10 Vdc, ftest = 1.0 MHz) Small-Signal Current Gain (IC = 0.5 Adc, VCE = 10 Vdc, f = 1.0 kHz) 2. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%. http://onsemi.com 2 TIP31, TIP31A, TIP31B, TIP31C, (NPN), TIP32, TIP32A, TIP32B, TIP32C, (PNP) PD, POWER DISSIPATION (WATTS) TC TA 40 4.0 TC 30 3.0 20 2.0 TA 10 1.0 0 0 0 20 40 120 60 100 80 T, TEMPERATURE (C) 140 160 Figure 1. Power Derating TURN-ON PULSE APPROX +11 V 2.0 RC IC/IB = 10 TJ = 25C 1.0 SCOPE Vin Vin 0 RB t, TIME (s) VEB(off) VCC t1 t3 APPROX +11 V Cjd << Ceb t1 7.0 ns 100 < t2 < 500 s t3 < 15 ns Vin t2 TURN-OFF PULSE - 4.0 V 0.7 0.5 tr @ VCC = 30 V 0.3 tr @ VCC = 10 V 0.1 0.07 0.05 0.03 0.02 0.03 DUTY CYCLE 2.0% APPROX - 9.0 V td @ VEB(off) = 2.0 V RB and RC VARIED TO OBTAIN DESIRED CURRENT LEVELS. 0.3 0.5 0.1 1.0 IC, COLLECTOR CURRENT (AMP) Figure 2. Switching Time Equivalent Circuit Figure 3. Turn-On Time http://onsemi.com 3 0.05 3.0 r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) TIP31, TIP31A, TIP31B, TIP31C, (NPN), TIP32, TIP32A, TIP32B, TIP32C, (PNP) 1.0 0.7 0.5 D = 0.5 0.3 0.2 0.2 0.1 0.1 0.07 0.05 ZJC(t) = r(t) RJC RJC(t) = 3.125C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) - TC = P(pk) ZJC(t) 0.05 0.02 0.03 0.02 0.01 0.01 0.01 SINGLE PULSE 0.02 0.05 1.0 0.2 0.5 1.0 2.0 5.0 t, TIME (ms) 10 20 50 P(pk) t1 t2 DUTY CYCLE, D = t1/t2 100 200 500 1.0 k Figure 4. Thermal Response 10 IC, COLLECTOR CURRENT (AMP) 5.0 100s 5.0ms 2.0 1.0 0.5 0.2 0.1 5.0 There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC - VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 5 is based on TJ(pk) = 150C; TC is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided TJ(pk) 150C. TJ(pk) may be calculated from the data in Figure 4. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. SECONDARY BREAKDOWN LIMITED @ TJ 150C THERMAL LIMIT @ TC = 25C (SINGLE PULSE) BONDING WIRE LIMIT TIP31A, TIP32A CURVES APPLY TIP31B, TIP32B BELOW RATED VCEO TIP31C, TIP32C 1.0ms 10 20 50 100 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 5. Active Region Safe Operating Area t, TIME (s) 1.0 0.7 0.5 0.3 0.2 ts tf @ VCC = 30 V 300 IB1 = IB2 IC/IB = 10 ts = ts - 1/8 tf TJ = 25C TJ = +25C 200 CAPACITANCE (pF) 3.0 2.0 tf @ VCC = 10 V 0.1 0.07 0.05 0.03 0.03 100 Ceb 70 50 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1.0 IC, COLLECTOR CURRENT (AMP) 2.0 30 0.1 3.0 Figure 6. Turn-Off Time Ccb 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 VR, REVERSE VOLTAGE (VOLTS) Figure 7. Capacitance http://onsemi.com 4 20 30 40 TIP31, TIP31A, TIP31B, TIP31C, (NPN), TIP32, TIP32A, TIP32B, TIP32C, (PNP) hFE, DC CURRENT GAIN 300 100 70 50 TJ = 150C VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) 500 VCE = 2.0 V 25C -55 C 30 10 7.0 5.0 0.03 0.05 0.07 0.1 0.3 0.5 0.7 1.0 IC, COLLECTOR CURRENT (AMP) 3.0 2.0 TJ = 25C 1.6 IC = 0.3 A 1.2 0.4 0 1.0 V, TEMPERATURE COEFFICIENTS (mV/C) 1.0 VBE(sat) @ IC/IB = 10 VBE @ VCE = 2.0 V 0.4 0.2 VCE(sat) @ IC/IB = 10 0 0.003 0.005 0.01 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1.0 2.0 3.0 IC, COLLECTOR CURRENT (A) 101 100 10-1 10-2 10 20 50 100 200 IB, BASE CURRENT (mA) 500 1000 +2.5 +2.0 *APPLIES FOR IC/IB hFE/2 TJ = -65C TO +150C +1.5 +1.0 +0.5 *VC FOR VCE(sat) 0 -0.5 -1.0 -1.5 VB FOR VBE -2.0 -2.5 0.003 0.005 0.01 0.02 0.05 0.1 0.2 0.3 0.5 1.0 IC, COLLECTOR CURRENT (AMP) Figure 10. "On" Voltages Figure 11. Temperature Coefficients 103 102 5.0 IC, COLLECTOR CURRENT (AMPS) VCE = 30 V TJ = 150C 100C REVERSE FORWARD 25C 10-3 -0.4 -0.3 -0.2 -0.1 ICES 0 +0.1 +0.2 +0.3 +0.4 +0.5 +0.6 R BE , EXTERNAL BASE-EMITTER RESISTANCE (OHMS) V, VOLTAGE (VOLTS) TJ = 25C 0.6 2.0 Figure 9. Collector Saturation Region 1.4 0.8 3.0 A 0.8 Figure 8. DC Current Gain 1.2 1.0 A 2.0 3.0 107 VCE = 30 V IC = 10 x ICES 106 IC ICES 105 104 IC = 2 x ICES 103 (TYPICAL ICES VALUES OBTAINED FROM FIGURE 12) 102 20 40 60 80 100 120 140 160 VBE, BASE-EMITTER VOLTAGE (VOLTS) TJ, JUNCTION TEMPERATURE (C) Figure 12. Collector Cut-Off Region Figure 13. Effects of Base-Emitter Resistance http://onsemi.com 5 TIP31, TIP31A, TIP31B, TIP31C, (NPN), TIP32, TIP32A, TIP32B, TIP32C, (PNP) ORDERING INFORMATION Device Package Shipping TIP31 TO-220AB 50 Units/Rail TIP31A TO-220AB 50 Units/Rail TIP31B TO-220AB 50 Units/Rail TIP31C TO-220AB 50 Units/Rail TIP32 TO-220AB 50 Units/Rail TIP32A TO-220AB 50 Units/Rail TIP32B TO-220AB 50 Units/Rail TIP32C TO-220AB 50 Units/Rail PACKAGE DIMENSIONS TO-220AB CASE 221A-09 ISSUE AA B NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. SEATING PLANE -TC F T S 4 A Q 1 2 3 U H K Z L R V J G STYLE 1: PIN 1. 2. 3. 4. D N BASE COLLECTOR EMITTER COLLECTOR DIM A B C D F G H J K L N Q R S T U V Z INCHES MIN MAX 0.570 0.620 0.380 0.405 0.160 0.190 0.025 0.035 0.142 0.147 0.095 0.105 0.110 0.155 0.018 0.025 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 --- --- 0.080 MILLIMETERS MIN MAX 14.48 15.75 9.66 10.28 4.07 4.82 0.64 0.88 3.61 3.73 2.42 2.66 2.80 3.93 0.46 0.64 12.70 14.27 1.15 1.52 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15 --- --- 2.04 ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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