UNISONIC TECHNOLOGIES CO., LTD
2N5401 PNP SILICON TRANSISTOR
www.unisonic.com.tw
1 of 4
Copyright © 2005 Unisonic Technologies Co., Ltd
QW-R201-001,D
HIGH VOLTAGE SWITCHING
TRANSISTOR
FEATURES
* Collector-emitter voltage:
V
CEO
= -150V
* High current gain
SOT-89
1
TO-92
1
*Pb-free plating product number:2N5401L
ORDERING INFORMATION
Order Number Pin Assignment
Normal Lead Free Plating Package 1 2 3 Packing
2N5401-x-AB3-R 2N5401L-x-AB3-R SOT-89 B C E Tape Reel
2N5401-x-T92-B 2N5401L-x-T92-B TO-92 E B C Tape Box
2N5401-x-T92-K 2N5401L-x-T92-K TO-92 E B C Bulk
2N5401L-x-AB3-R ( 1)P ac k ing T y pe
(2) P ack age T y pe
(3)Rank
(4 )Lead Plating
(1) B: Tap e Bo x, K: Bul k, R : Tap e R ee l
(2) AB3: SOT -8 9, T9 2: TO -9 2
(3) x: refer to Classification of h
FE
( 4) L: Lead Free P l ating, B l ank : Pb/Sn
2N5401 PNP SILICON TRANSISTOR
UNISONIC TECHNOLOGIES CO., LTD
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QW -R201-001,D
ABSOLUTE MAXIMUM RATING
(Ta=25°C , unless otherwise specified)
PARAMETER SYMBOL RATINGS UNIT
Collector-Base Voltage V
CBO
-160 V
Collector-Emitter Voltage V
CEO
-150 V
Emitter-Base Voltage V
EBO
-5 V
Collector Current I
C
-600 mA
TO-92 625 mW
Collector Dissipation SOT-89 P
C
500 mW
Junction Temperature T
J
+150 ℃
Storage Temperature T
STG
-55 ~ +150 ℃
Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS
(Ta=25°C, unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT
Collector-Base Breakdown Voltage BV
CBO
Ic = -100µA, I
E
= 0 -160 V
Collector-Emitter Breakdown Voltage BV
CEO
Ic = -1mA, I
B
= 0 -150 V
Emitter-Base Breakdown Voltage BV
EBO
I
E
= -10µA, Ic = 0 -6 V
Collector Cut-off Current I
CBO
V
CB
= -120V, I
E
= 0 -50 nA
Emitter Cut-off Current I
EBO
V
EB
= -3V, Ic = 0 -50 nA
DC Current Gain(Note) h
FE1
h
FE2
h
FE3
V
CE
= -5V, Ic = -1mA
V
CE
= -5V, Ic = -10mA
V
CE
= -5V, Ic = -50mA
80
80
80 400
Collector-Emitter Saturation Voltage V
CE(SAT)
Ic = -10mA, I
B
= -1mA
Ic = -50mA, I
B
= -5mA
-0.2
-0.5 V
Base-Emitter Saturation Voltage V
BE(SAT)
Ic = -10mA, I
B
= -1mA
Ic = -50mA, I
B
= -5mA
-1
-1 V
Current Gain Bandwidth Product f
T
V
CE
= -10V, Ic = -10mA
f = 100MHz 100 400 MHz
Output Capacitance Cob V
CB
= -10V, I
E
= 0, f = 1MHz 6.0 pF
Noise Figure NF Ic = -0.25mA, V
CE
= -5V
Rs = 1kΩ, f = 10Hz ~ 15.7kHz 8 dB
Note: Pulse test: PW<300µs, Duty Cycle<2%
CLASSIFICATION OF h
FE
RANK A B C
RANGE 80-170 150-240 200-400
2N5401 PNP SILICON TRANSISTOR
UNISONIC TECHNOLOGIES CO., LTD
3 of 4
www.unisonic.com.tw
QW -R201-001,D
TYPICAL CHARACTERISTICS
DC Current Gain vs.
C ollec t or C urrent
C ollec t or Current, I c (m A)
D C C urrent Gain, h
FE
C apac it anc e v s. C ollec t or-
Bas e Volt age
C ollec t or-Bas e Volt age (V)
Capac itance, Cob(pF)
0
4
8
12
16
20
-10
0
-10
1
-10
2
f=1MHz
I
E
=0
V
CE
=-5V
10
3
10
2
10
1
10
0
-10
0
-10
3
-10
-1
-10
1
-10
2
C ollec t or Current v s. Bas e-Em it t er
Voltage
Collec tor C urrent, Ic (mA)
Base-Emitter Voltage (V)
0 -0.2 -0.4 -0.6 -0.8 -1.0
Sat urat ion Volt age
(V)
Saturation Voltage vs.
C ollec t or C urrent
C ollec t or Current, I c (m A)
V
CE
=-5V
-10
3
-10
2
-10
1
-10
0
-10
-2
-10
-1
-10
0
-10
1
-10
0
-10
3
-10
-1
-10
1
-10
2
I
C
=10*I
B
V
BE(SAT)
V
CE(SAT)
C urrent Gain-Bandw idt h Produc t
vs . Collector Current
Curren t Gain-
BandwidthProduc t , f(M H z )
Collector Current, Ic(mA)
10
3
10
2
10
1
10
0
-10
0
-10
3
-10
-1
-10
1
-10
2
V
CE
=-10V
2N5401 PNP SILICON TRANSISTOR
UNISONIC TECHNOLOGIES CO., LTD
4 of 4
www.unisonic.com.tw
QW -R201-001,D
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
m alfunction of these products can be reasonably ex pected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believ ed to be accurate
and reliable and m ay be changed without notice.
