UF28150J PRELIMINARY
POWER MOSFET TRANSISTOR
150 WATTS, 100 - 500 MHz, 28 V
FEATURES OUTLINE DRAWING
• N-Channel Enhancement Mode Device
• Applications
• 150 Watts CW
• Common Source Gemini Configuration
• RESFET Structure
• Internal Input Impedance Matching
• Gold Metallization
ABSOLUTE MAXIMUM RATINGS AT 25°C
Parameter Symbol Rating Units
Drain-Source Voltage VDS 60 V
Gate-Source Voltage VGS 20 V
Drain-Source Current IDS 28 A
Dissipation @25°C PD 233 W
Storage Temperature Tstg -55 to +150 °C
Junction Temperature Tj 200 °C
Thermal Resistance θjc 0.75 °C/W
ELECTRICAL CHARACTERISTICS AT 25°C (*per side)
Parameter Symbol Min Max Units Test Conditions
Drain-Source Breakdown
Voltage
BVDSS 60 - V ID=40 mA, VGS=0.0 V*
Drain-Source Leakage
Current
IDSS - 4.0 mA VDS=28.0 V, VGS=0.0 V*
Gate-Source Leakage
Current
IGSS - 2.0
µA VGS=20 V, VDS=0.0 V*
Gate Threshold Voltage VGS(th) 2.0 6.0 V VDS=10.0 V, IDS=200 mA*
Forward Transconductance Gm 1.0 - S VDS=10.0 V, IDS=2000 mA (pulsed)*
Input Capacitance CISS 200 pF VDS=28.0 V, f=1.0 MHz (Reference Only)*
Reverse Capacitance CRSS 50 pF VDS=28.0 V, f=1.0 MHz*
Output Capacitance COSS 14 pF VDS=28.0 V, f=1.0 MHz*
Power Gain GP 10 - dB VDD=26 V, IDQ=400 mA, Pout=80 W, F=960 MHz
Collector Efficiency η 50 - % VDD=26 V, IDQ=400 mA, Pout=80 W, F=960 MHz
Load Mismatch Tolerance VSWR - 3.0:1 - VDD=26 V, IDQ=400 mA, Pout=80 W, F=960 MHz
TYPICAL OPTIMUM DEVICE IMPEDANCE
F (MHz) Z in (Ω) Z load (Ω)
935 4.6 + j8.0 2.3 + j3.1
960 4.7 + j7.8 2.4 + j3.1
M/A-COM POWER TRANSISTORS • 1742 CRENSHAW BLVD • TORRANCE, CA 90501
(310) 320-6160 • FAX (310) 618-9191
M/A-COM, PHO RESERVES THE RIGHT TO MAKE CHANGES AND IMPROVEMENTS WITHOUT NOTICE. DS175 REV 02/16/96
TYPICAL BROADBAND PERFORMANCE CURVES - UF28150J
Output Power vs Input Power Output Power vs Drain Voltage
Power Input (W)
0
10
20
30
40
50
60
70
80
90
100
0246810
960 MHz
935 MHz
Vds = 26 V Idq = .40 A
Power Output (W)
Drain Voltage (V)
0
10
20
30
40
50
60
70
80
90
100
19 21 23 25 27 29
Frequency = 960 MHz Idq = .40 A Pin = 8.0 W
Power Output (W)
Gain vs. Frequency Efficiency vs. Frequency
Frequency (MHz)
9
9.5
10
10.5
11
11.5
12
932 936 940 944 948 952 956 960 964
Gain (dB)
Frequency (MHz)
30
35
40
45
50
55
60
65
70
932 936 940 944 948 952 956 960 964
Vds = 26 V Idq = .40 A Po = 80 W
Efficiency (%)
Gain vs. Temperature Capacitance vs. Voltage
Case Temperature (C)
8
9
10
11
12
13
20 40 60 80 100 120
Vds = 26 V Idq = .40 A Po = 80 W F = 960 MHz
Gain (dB)
Drain Voltage (V)
0
10
20
30
40
50
60
70
80
0 5 10 15 20 25 30 35
Crss
Coss
F = 1 MHz
M/A-COM POWER TRANSISTORS • 1742 CRENSHAW BLVD • TORRANCE, CA 90501
(310) 320-6160 • FAX (310) 618-9191
M/A-COM, PHO RESERVES THE RIGHT TO MAKE CHANGES AND IMPROVEMENTS WITHOUT NOTICE. DS175 REV 02/16/96
RF MOSFET Power Transistor, 15OW, 28V UF2815OJ
v2.00
Typical Device Impedance
Frequency (MHz)
100
300
500
Z,, (OHMS) Z
LoAD (OHMS)
3.7 - j 5.9 3.0 - j 0.7
2.7 - j 5.8 2.6 - j 0.55
2.5 + j 2.9 2.5 - j 0.5
V,,=28 V, I,,=400 ?A, PouT=150.0 Watts
Z,, is the series equivalent input impedance of the device from gate to gate.
Z LOAD is the optimum series equivalent load impedance as measured from drain to drain.
. .
RF Test Fixture
‘V, BIAS
RFDPIJT RFDJTPUT m
cl
&wR
c7. Y
c4 & ls 17
cl6
RI
P2
R3
n
T.3345
16
u
L2
L34
Ru
mhls
Specifications Subject to Change Without Notice. M/A-COM, Inc.
North America: Tel. (800) 366-2266 n Asia/Pacific: Tel. +81 (03) 3226-1671 l Europe: Tel. +44 (1344) 869 595
Fax (800) 618-8883 Fax +81 (03) 3226-1451 Fax +44 (1344) 300 020
