UF28150J PRELIMINARY POWER MOSFET TRANSISTOR 150 WATTS, 100 - 500 MHz, 28 V OUTLINE DRAWING FEATURES * N-Channel Enhancement Mode Device * Applications * 150 Watts CW * Common Source Gemini Configuration * RESFET Structure * Internal Input Impedance Matching * Gold Metallization ABSOLUTE MAXIMUM RATINGS AT 25C Parameter Symbol Rating Units Drain-Source Voltage VDS 60 V Gate-Source Voltage VGS 20 V Drain-Source Current IDS 28 A Dissipation @25C PD 233 W Storage Temperature Tstg -55 to +150 C Junction Temperature Tj 200 C jc 0.75 C/W Thermal Resistance ELECTRICAL CHARACTERISTICS AT 25C (*per side) Parameter Symbol Min Max Drain-Source Breakdown Voltage Drain-Source Leakage Current Gate-Source Leakage Current Gate Threshold Voltage Units Test Conditions BVDSS 60 - V IDSS - 4.0 mA VDS=28.0 V, VGS=0.0 V* IGSS - 2.0 A VGS=20 V, VDS=0.0 V* VGS(th) 2.0 6.0 V Gm 1.0 - S pF VDS=10.0 V, IDS=200 mA* VDS=10.0 V, IDS=2000 mA (pulsed)* VDS=28.0 V, f=1.0 MHz (Reference Only)* Forward Transconductance Input Capacitance ID=40 mA, VGS=0.0 V* CISS CRSS 200 Reverse Capacitance 50 pF Output Capacitance COSS 14 pF VDS=28.0 V, f=1.0 MHz* VDS=28.0 V, f=1.0 MHz* Power Gain GP 10 - dB VDD=26 V, IDQ=400 mA, Pout=80 W, F=960 MHz 50 - % VSWR - 3.0:1 - VDD=26 V, IDQ=400 mA, Pout=80 W, F=960 MHz VDD=26 V, IDQ=400 mA, Pout=80 W, F=960 MHz Collector Efficiency Load Mismatch Tolerance TYPICAL OPTIMUM DEVICE IMPEDANCE F (MHz) Z in () Z load () 935 4.6 + j8.0 2.3 + j3.1 960 4.7 + j7.8 2.4 + j3.1 M/A-COM POWER TRANSISTORS * 1742 CRENSHAW BLVD * TORRANCE, CA 90501 (310) 320-6160 * FAX (310) 618-9191 M/A-COM, PHO RESERVES THE RIGHT TO MAKE CHANGES AND IMPROVEMENTS WITHOUT NOTICE. DS175 REV 02/16/96 TYPICAL BROADBAND PERFORMANCE CURVES - UF28150J Output Power vs Input Power Output Power vs Drain Voltage Power Output (W) 100 Power Output (W) 100 90 90 Vds = 26 V Idq = .40 A 80 80 70 70 60 60 50 50 40 40 960 MHz 30 30 935 MHz 20 20 10 Frequency = 960 MHz 10 0 Pin = 8.0 W 0 0 2 4 6 8 10 19 21 23 Power Input (W) 25 27 29 Drain Voltage (V) Gain vs. Frequency 12 Idq = .40 A Efficiency vs. Frequency Efficiency (%) Gain (dB) 70 65 11.5 60 11 55 50 10.5 45 10 40 9.5 Vds = 26 V Idq = .40 A 936 944 Po = 80 W 35 9 932 936 940 944 948 952 956 960 964 30 932 940 Frequency (MHz) 948 952 956 960 964 Frequency (MHz) Gain vs. Temperature Capacitance vs. Voltage Gain (dB) 13 80 Crss 70 12 Coss 60 50 11 40 10 F = 1 MHz 30 20 9 Vds = 26 V Idq = .40 A Po = 80 W F = 960 MHz 8 10 0 20 40 60 80 Case Temperature (C) 100 120 0 5 10 15 20 25 30 35 Drain Voltage (V) M/A-COM POWER TRANSISTORS * 1742 CRENSHAW BLVD * TORRANCE, CA 90501 (310) 320-6160 * FAX (310) 618-9191 M/A-COM, PHO RESERVES THE RIGHT TO MAKE CHANGES AND IMPROVEMENTS WITHOUT NOTICE. DS175 REV 02/16/96 RF MOSFET Power Transistor, 15OW, 28V UF2815OJ v2.00 Typical Device Impedance Frequency (MHz) Z,, (OHMS) Z LoAD (OHMS) 100 3.7 - j 5.9 3.0 - j 0.7 300 2.7 - j 5.8 2.6 - j 0.55 500 2.5 + j 2.9 2.5 - j 0.5 V,,=28 Z,, is the series equivalent input impedance Z LOADis the optimum series equivalent . . V, I,,=400 ?A, PouT=150.0 Watts of the device from gate to gate. load impedance as measured from drain to drain. RF Test Fixture `V,BIAS RFDPIJT RFDJTPUT m cl &wR c7. Y c4 & ls cl6 17 RI P2 R3 n T.3345 16 u L2 L34 Ru mhls Specifications Subject to Change Without Notice. M/A-COM, Inc. North America: Tel. (800) 366-2266 Fax (800) 618-8883 n Asia/Pacific: Tel. +81 (03) 3226-1671 Fax +81 (03) 3226-1451 l Europe: Tel. +44 (1344) 869 595 Fax +44 (1344) 300 020