MMBT2222AT/R - NXP Semiconductors / Philips Semiconductors

DATA SH EET

Product data sheet

Supersedes data of 2000 Apr 11 2004 Jan 16

DISCRETE SEMICONDUCTORS

MMBT2222A

NPN switching transistor

2004 Jan 16 2

NXP Semiconductors Product data sheet

NPN switching transistor MMBT2222A

FEATURES

•High current (max. 600 mA)

•Low voltage (max. 40 V).

APPLICATIONS

•Switching and linear amplification.

DESCRIPTION

NPN switching tran sistor in a SOT23 plastic package.

PNP complement: PMBT2907A.

MARKING

Note

1. * = p : Made in Hong Kong .

* = t : Made in Malaysia.

* = W : Made in China.

PINNING

TYPE NUMBER MARKING CODE(1)

MMBT2222A 7C*

PIN DESCRIPTION

1base

2emitter

3collector

handbook, halfpage

MAM255

Top view

Fig.1 Simplified outline (SOT23 ) and symbo l .

ORDERING INFORMATION

LIMITING VALUES

In accordance with th e Absolute Maximum Ratin g S ystem (IEC 60134).

Note

1. Transistor mounted on an FR4 printed-circuit board.

TYPE

NUMBER PACKAGE

NAME DESCRIPTION VERSION

MMBT2222A −plasti c sur f a ce mounted pa ckage; 3 leads SOT23

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

VCBO collector-base volta ge open emitter −75 V

VCEO collector-emitter voltage open base −40 V

VEBO emitter-base voltage open collector −6 V

ICcollector current (DC) −600 mA

ICM peak collector current −800 mA

IBM peak base current −200 mA

Ptot total power dissipation Tamb ≤ 25 °C; note 1 −250 mW

Tstg storage temperature −65 +150 °C

Tjjunction temperature −150 °C

Tamb operating ambient temperature −65 +150 °C

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NXP Semiconductors Pr oduct data shee t

NPN switching transistor MMBT2222A

THERMAL CHARACTE RISTICS

Note

1. Transistor mounted on an FR4 printed-circuit board.

CHARACTERISTICS

Tj = 25 °C unless otherwise specified.

Note

1. Pulse test: tp ≤ 300 µs; δ ≤ 0.02.

SYMBOL PARAMETER CONDITIONS VALUE UNIT

Rth(j-a) thermal resistance from junction to ambient note 1 500 K/W

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

ICBO collector cut-off current IE = 0; VCB = 60 V −10 nA

IE = 0; VCB = 60 V; Tj = 125 °C−10 µA

IEBO emitter cu t-off current IC = 0; VEB = 5 V −10 nA

hFE DC current gain IC = 0.1 mA; VCE = 10 V 35 −

IC = 1 mA; VCE = 10 V 50 −

IC = 10 mA; VCE = 10 V 75 −

IC = 10 mA; VCE = 10 V;

Tamb = −55 °C35 −

IC = 150 mA; VCE = 10 V 100 300

IC = 150 mA; VCE = 1 V 50 −

IC = 500 mA; VCE = 10 V 40 −

VCEsat collector-emitter saturation voltage IC = 150 mA; IB = 15 mA; note 1 −300 mV

IC = 500 mA; IB = 50 mA; note 1 −1 V

VBEsat base-emitter saturation voltage IC = 150 mA; IB = 15 mA; note 1 0.6 1.2 V

IC = 500 mA; IB = 50 mA; note 1 −2 V

Cccollector capacitance IE = ie = 0; VCB = 10 V;

f = 1 MHz −8pF

Ceemitter capacitance IC = ic = 0; VEB = 500 mV;

f = 1 MHz −25 pF

fTtransition frequency IC = 20 mA; VCE = 20 V;

f = 100 MHz 300 −MHz

Fnoise figure IC = 100 µA; VCE = 5 V;

RS = 1 kΩ; f = 1 kHz −4dB

Switching times (between 10% and 90% levels); (see Fig.2)

ton turn-on time ICon = 150 mA; IBon = 15 mA;

IBoff = −15 mA −35 ns

tddelay time −15 ns

trrise time −20 ns

toff turn-off time −250 ns

tsstorage time −200 ns

tffall time −60 ns

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NXP Semiconductors Pr oduct data shee t

NPN switching transistor MMBT2222A

handbook, full pagewidth

DUT

MLB826

RB(probe)

450 Ω

(probe)

450 Ω

oscilloscope oscilloscope

Fig.2 Test circuit for switching times.

Vi = 9.5 V; T = 500 µs; tp = 10 µs; tr = tf ≤ 3 ns.

R1 = 68 Ω; R2 = 325 Ω; RB = 325 Ω; RC = 160 Ω.

VBB = −3.5 V; VCC = 29.5 V.

Oscilloscope: input impedance Zi = 50 Ω.

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NXP Semiconductors Pr oduct data shee t

NPN switching transistor MMBT2222A

PACKAGE OUTLINE

UNIT A

max. b

cDE e

Qwv

REFERENCES

OUTLINE

VERSION EUROPEAN

PROJECTION ISSUE DATE

04-11-04

06-03-16

IEC JEDEC JEITA

mm 0.1 0.48

0.38 0.15

0.09 3.0

2.8 1.4

1.2 0.95

1.9 2.5

2.1 0.55

0.45 0.1

0.2

DIMENSIONS (mm are the original dimensions)

0.45

0.15

SOT23 TO-236AB

detail X

0 1 2 mm

scale

1.1

0.9

Plastic surface-mounted package; 3 leads SOT2

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NXP Semiconductors Pr oduct data shee t

NPN switching transistor MMBT2222A

DATA SHEET STATUS

Notes

1. Please consult the most recently issued document before initiating or completing a design.

2. The product s ta tus of device(s ) described in this document may have changed since this document was published

and may differ in case of multiple devices. The latest product status information is available on the Internet at

URL http://www.nxp.com.

DOCUMENT

STATUS(1) PRODUCT

STATUS(2) DEFINITION

Objective data sheet Development This document contains data from the objective specification for pro duct

development.

Preliminary data sheet Qualification This document contains data from the preliminary specification.

Product data sheet Production T his document contains the product specification.

DISCLAIMERS

General ⎯ Information in this document is believed to be

accurate and reliable . H ow ev er, NXP Semiconductors

does not give any representations or warranties,

expressed or implied, as to the accuracy or completeness

of such information and shall have no liability for the

consequenc es of use of such information.

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reserves the right to make changes to information

published in this doc ument, including without limitation

specifications and product descriptions, at any time and

without notice. This document supersedes and replaces all

information supplied prior to the publication hereof.

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not designed, au thorized or warranted to be suitable for

use in medical, military, aircraft, space or life support

equipment, nor in applications where failure or malfunction

of an NXP Semiconductors product can reasonably be

expected to result in pe rs onal injury, death or seve re

property or environmental damage. NXP Semiconductors

accepts no liability for inclusion and/or use of NXP

Semiconductors products in such equipment or

applications and therefor e s uc h inclusion and/or use is at

the customer’s own risk .

Applications ⎯ Applications that are described herein for

any of these products are for illustrative purposes only.

NXP Semiconductors makes no representation or

warranty that such applications will be suitable for the

specified use witho ut fu rth e r testing or modification .

Limiting values ⎯ Stress above one or more limiting

values (as defined in the Absolute Maximum Ratings

System of IEC 60134) may cause permanent damage to

the device. Limiting values are stress ratings only and

operation of the device at these or an y other conditions

above those given in the Characteristics sections of this

document is not implied. Exposure to limiting values for

extended periods may affect device reliability.

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products are sold subject to the general terms and

conditions of commercial sale, as published at

http://www.nxp.com/profile/terms, including those

pertaining to warranty, intellectual property rights

infringement and limitation of liability, unless explicitly

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case of any incons istency or conflict betw een information

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that is open for accept ance or the grant, c onveyance or

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described herein may be subject to export control

regulations. Export might require a prior authorization from

national author ities.

Quick refer ence data ⎯ The Quick reference data is an

extract of th e product data given in the Limiting values an d

Characteristics sections of this docu ment, and as such is

not complete, exhaus tive or legally binding.

NXP Semiconductors

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The information pr e sent ed in this document d oes not form part o f an y q uotation or contra ct, is b elieve d t o b e a ccur ate a nd re li a ble and may be chan ged

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Customer notification

This data sheet was changed to reflect the new company name NXP Semiconductors. No changes were

made to the content, except for the legal definitions and disclaimers.

Printed in The Netherlands R75/02/pp7 Date of release: 2004 Jan 16 Document orde r number: 9397 750 12432