1. Product profile
1.1 General description
NPN general-purpose transistors.
[1] Also available in SOT54A and SOT54 variant packages (see Section 2).
1.2 Features
High current
Low voltage
1.3 Applications
General-purpose switching and amplification
1.4 Quick reference data
[1] Pulse test: tp 300 µs; δ ≤ 0.02.
BC817; BC817W; BC337
45 V, 500 mA NPN general-purpose transistors
Rev. 05 — 21 January 2005 Product data sheet
Table 1: Product overview
Type number Package PNP complement
Philips JEITA
BC817 SOT23 - BC807
BC817W SOT323 SC-70 BC807W
BC337[1] SOT54 (TO-92) SC-43A BC327
Table 2: Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
VCEO collector-emitter voltage open base;
IC=10mA --45V
ICcollector current (DC) - - 500 mA
ICM peak collector current - - 1 A
hFE DC current gain IC = 100 mA;
VCE =1V [1] ---
BC817; BC817W; BC337 100 - 600
BC817-16; BC817-16W; BC337-16 100 - 250
BC817-25; BC817-25W; BC337-25 160 - 400
BC817-40; BC817-40W; BC337-40 250 - 600
9397 750 14022 © Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet Rev. 05 — 21 January 2005 2 of 19
Philips Semiconductors BC817; BC817W; BC337
45 V, 500 mA NPN general-purpose transistors
2. Pinning information
Table 3: Pinning
Pin Description Simplified outline Symbol
SOT23
1 base
2 emitter
3 collector
SOT323
1 base
2 emitter
3 collector
SOT54
1 emitter
2 base
3 collector
SOT54A
1 emitter
2 base
3 collector
SOT54 variant
1 emitter
2 base
3 collector
SOT23
12
3
sym021
3
2
1
3
12
sot323_so
sym021
3
2
1
001aab347
1
2
3
sym026
3
1
2
001aab348
1
2
3
sym026
3
1
2
001aab447
1
2
3
sym026
3
1
2
9397 750 14022 © Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet Rev. 05 — 21 January 2005 3 of 19
Philips Semiconductors BC817; BC817W; BC337
45 V, 500 mA NPN general-purpose transistors
3. Ordering information
[1] Valid for all available selection groups.
[2] Also available in SOT54A and SOT54 variant packages (see Section 2 and Section 9).
4. Marking
[1] * = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
Table 4: Ordering information
Type number[1] Package
Name Description Version
BC817 - plastic surface mounted package; 3 leads SOT23
BC817W SC-70 plastic surface mounted package; 3 leads SOT323
BC337[2] SC-43A plastic single-ended leaded (through hole) package;
3 leads SOT54
Table 5: Marking codes
Type number Marking code[1]
BC817 6D*
BC817-16 6A*
BC817-25 6B*
BC817-40 6C*
BC817W 6D*
BC817-16W 6A*
BC817-25W 6B*
BC817-40W 6C*
BC337 C337
BC337-16 C33716
BC337-25 C33725
BC337-40 C33740
9397 750 14022 © Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet Rev. 05 — 21 January 2005 4 of 19
Philips Semiconductors BC817; BC817W; BC337
45 V, 500 mA NPN general-purpose transistors
5. Limiting values
[1] Transistor mounted on an FR4 printed-circuit board, single-sided copper, tin-plated and standard footprint.
[2] Valid for all available selection groups.
6. Thermal characteristics
[1] Transistor mounted on an FR4 printed-circuit board, single-sided copper, tin-plated and standard footprint.
[2] Valid for all available selection groups.
Table 6: Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
VCBO collector-base voltage open emitter - 50 V
VCEO collector-emitter voltage open base;
IC=10mA -45V
VEBO emitter-base voltage open collector - 5 V
ICcollector current (DC) - 500 mA
ICM peak collector current - 1 A
IBM peak base current - 200 mA
Ptot total power dissipation
BC817 Tamb 25 °C[1] [2] - 250 mW
BC817W Tamb 25 °C[1] [2] - 200 mW
BC337 Tamb 25 °C[1] [2] - 625 mW
Tstg storage temperature 65 +150 °C
Tjjunction temperature - 150 °C
Tamb ambient temperature 65 +150 °C
Table 7: Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
Rth(j-a) thermal resistance from
junction to ambient
BC817 Tamb 25 °C[1] [2] - - 500 K/W
BC817W Tamb 25 °C[1] [2] - - 625 K/W
BC337 Tamb 25 °C[1] [2] - - 200 K/W
9397 750 14022 © Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet Rev. 05 — 21 January 2005 5 of 19
Philips Semiconductors BC817; BC817W; BC337
45 V, 500 mA NPN general-purpose transistors
7. Characteristics
[1] Pulse test: tp 300 µs; δ ≤ 0.02.
[2] VBE decreases by approximately 2 mV/K with increasing temperature.
Table 8: Characteristics
T
amb
= 25
°
C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
ICBO collector-base cut-off current IE = 0 A; VCB = 20 V - - 100 nA
IE = 0 A; VCB = 20 V;
Tj= 150 °C--5µA
IEBO emitter-base cut-off current IC = 0 A; VEB = 5 V - - 100 nA
hFE DC current gain IC = 100 mA; VCE = 1 V [1]
BC817; BC817W; BC337 100 - 600
BC817-16; BC817-16W;
BC337-16 100 - 250
BC817-25; BC817-25W;
BC337-25 160 - 400
BC817-40; BC817-40W;
BC337-40 250 - 600
hFE DC current gain IC = 500 mA; VCE = 1 V [1] 40 - -
VCEsat collector-emitter saturation
voltage IC = 500 mA; IB = 50 mA [1] - - 700 mV
VBE base-emitter voltage IC = 500 mA; VCE = 1 V [2] - - 1.2 V
Cccollector capacitance IE = ie = 0 A; VCB = 10 V;
f=1MHz -3-pF
fTtransition frequency IC = 10 mA; VCE = 5 V;
f = 100 MHz 100 - - MHz
9397 750 14022 © Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet Rev. 05 — 21 January 2005 6 of 19
Philips Semiconductors BC817; BC817W; BC337
45 V, 500 mA NPN general-purpose transistors
VCE = 1 V.
(1) Tamb = 150 °C.
(2) Tamb = 25 °C.
(3) Tamb = 55 °C.
VCE = 1 V.
(1) Tamb = 150 °C.
(2) Tamb = 25 °C.
(3) Tamb = 55 °C.
Fig 1. Selection -16: DC current gain as a function of
collector current; typical values. Fig 2. Selection -25: DC current gain as a function of
collector current; typical values.
VCE = 1 V.
(1) Tamb = 150 °C.
(2) Tamb = 25 °C.
(3) Tamb = 55 °C.
Fig 3. Selection -40: DC current gain as a function of collector current; typical values.
006aaa131
200
100
300
400
hFE
0
IC (mA)
101103
102
110
(1)
(2)
(3)
006aaa132
400
200
600
hFE
0
IC (mA)
101103
102
110
(1)
(2)
(3)
006aaa133
400
200
600
800
hFE
0
IC (mA)
101103
102
110
(1)
(2)
(3)
9397 750 14022 © Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet Rev. 05 — 21 January 2005 7 of 19
Philips Semiconductors BC817; BC817W; BC337
45 V, 500 mA NPN general-purpose transistors
IC/IB = 10.
(1) Tamb = 55 °C.
(2) Tamb = 25 °C.
(3) Tamb = 150 °C.
IC/IB = 10.
(1) Tamb = 55 °C.
(2) Tamb = 25 °C.
(3) Tamb = 150 °C.
Fig 4. Selection -16: Base-emitter saturation voltage
as a function of collector current; typical
values.
Fig 5. Selection -25: Base-emitter saturation voltage
as a function of collector current; typical
values.
IC/IB = 10.
(1) Tamb = 55 °C.
(2) Tamb = 25 °C.
(3) Tamb = 150 °C.
Fig 6. Selection -40: Base-emitter saturation voltage as a function of collector current; typical values.
006aaa134
IC (mA)
101103
102
110
1
10
VBEsat
(V)
101
(1)
(2)
(3)
006aaa135
IC (mA)
101103
102
110
1
10
VBEsat
(V)
101
(1)
(2)
(3)
006aaa136
IC (mA)
101103
102
110
1
10
VBEsat
(V)
101
(1)
(2)
(3)
9397 750 14022 © Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet Rev. 05 — 21 January 2005 8 of 19
Philips Semiconductors BC817; BC817W; BC337
45 V, 500 mA NPN general-purpose transistors
IC/IB = 10.
(1) Tamb = 150 °C.
(2) Tamb = 25 °C.
(3) Tamb = 55 °C.
IC/IB = 10.
(1) Tamb = 150 °C.
(2) Tamb = 25 °C.
(3) Tamb = 55 °C.
Fig 7. Selection -16: Collector-emitter saturation
voltage as a function of collector current;
typical values.
Fig 8. Selection -25: Collector-emitter saturation
voltage as a function of collector current;
typical values.
IC/IB = 10.
(1) Tamb = 150 °C.
(2) Tamb = 25 °C.
(3) Tamb = 55 °C.
Fig 9. Selection -40: Collector-emitter saturation voltage as a function of collector current; typical values.
006aaa137
IC (mA)
101103
102
110
101
1
VCEsat
(V)
102
(1) (2)
(3)
006aaa138
101
102
1
VCEsat
(V)
103
IC (mA)
101103
102
110
(1)
(2)
(3)
006aaa139
101
102
1
VCEsat
(V)
103
IC (mA)
101103
102
110
(1)
(2)
(3)
9397 750 14022 © Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet Rev. 05 — 21 January 2005 9 of 19
Philips Semiconductors BC817; BC817W; BC337
45 V, 500 mA NPN general-purpose transistors
Tamb = 25 °C.
(1) IB = 16.0 mA.
(2) IB = 14.4 mA.
(3) IB = 12.8 mA.
(4) IB = 11.2 mA.
(5) IB = 9.6 mA.
(6) IB = 8.0 mA.
(7) IB = 6.4 mA.
(8) IB = 4.8 mA.
(9) IB = 3.2 mA.
(10) IB = 1.6 mA.
Tamb = 25 °C.
(1) IB = 13.0 mA.
(2) IB = 11.7 mA.
(3) IB = 10.4 mA.
(4) IB = 9.1 mA.
(5) IB = 7.8 mA.
(6) IB = 6.5 mA.
(7) IB = 5.2 mA.
(8) IB = 3.9 mA.
(9) IB = 2.6 mA.
(10) IB = 1.3 mA.
Fig 10. Selection -16: Collector current as a function of
collector-emitter voltage; typical values. Fig 11. Selection -25: Collector current as a function of
collector-emitter voltage; typical values.
VCE (V)
054231
006aaa140
0.4
0.8
1.2
IC
(A)
0
(6)
(7)
(8)
(9)
(10)
(1)(2)(3)(4)
(5)
VCE (V)
054231
006aaa141
0.4
0.8
1.2
IC
(A)
0
(7)
(8)
(9)
(10)
(1)(2)
(3)(4)
(5)(6)
9397 750 14022 © Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet Rev. 05 — 21 January 2005 10 of 19
Philips Semiconductors BC817; BC817W; BC337
45 V, 500 mA NPN general-purpose transistors
Tamb = 25 °C.
(1) IB = 12.0 mA.
(2) IB = 10.8 mA.
(3) IB = 9.6 mA.
(4) IB = 8.4 mA.
(5) IB = 7.2 mA.
(6) IB = 6.0 mA.
(7) IB = 4.8 mA.
(8) IB = 3.6 mA.
(9) IB = 2.4 mA.
(10) IB = 1.2 mA.
Fig 12. Selection -40: Collector current as a function of collector-emitter voltage; typical values.
VCE (V)
054231
006aaa142
0.4
0.8
1.2
IC
(A)
0
(7)
(8)
(9)
(10)
(1)(2)
(3)(4)
(5)(6)
9397 750 14022 © Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet Rev. 05 — 21 January 2005 11 of 19
Philips Semiconductors BC817; BC817W; BC337
45 V, 500 mA NPN general-purpose transistors
8. Package outline
Fig 13. Package outline SOT23 (TO-236AB).
UNIT A1
max. bpcDE e1HELpQwv
REFERENCES
OUTLINE
VERSION EUROPEAN
PROJECTION ISSUE DATE
99-09-13
04-11-04
IEC JEDEC JEITA
mm 0.1 0.48
0.38 0.15
0.09 3.0
2.8 1.4
1.2 0.95
e
1.9 2.5
2.1 0.55
0.45 0.1
0.2
DIMENSIONS (mm are the original dimensions)
0.45
0.15
SOT23 TO-236AB
bp
D
e1
e
A
A1
Lp
Q
detail X
HE
E
wM
vMA
B
AB
0 1 2 mm
scale
A
1.1
0.9
c
X
12
3
Plastic surface mounted package; 3 leads SOT23
9397 750 14022 © Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet Rev. 05 — 21 January 2005 12 of 19
Philips Semiconductors BC817; BC817W; BC337
45 V, 500 mA NPN general-purpose transistors
Fig 14. Package outline SOT323 (SC-70).
UNIT A1
max bpcD Ee1HELpQwv
REFERENCES
OUTLINE
VERSION EUROPEAN
PROJECTION ISSUE DATE
IEC JEDEC JEITA
mm 0.1
1.1
0.8 0.4
0.3 0.25
0.10 2.2
1.8 1.35
1.15 0.65
e
1.3 2.2
2.0 0.23
0.13 0.20.2
DIMENSIONS (mm are the original dimensions)
0.45
0.15
SOT323 SC-70
wM
bp
D
e1
e
A
B
A1
Lp
Q
detail X
c
HE
E
vMA
AB
y
0 1 2 mm
scale
A
X
12
3
Plastic surface mounted package; 3 leads SOT323
97-02-28
04-11-04
9397 750 14022 © Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet Rev. 05 — 21 January 2005 13 of 19
Philips Semiconductors BC817; BC817W; BC337
45 V, 500 mA NPN general-purpose transistors
Fig 15. Package outline SOT54 (SC-43A/TO-92).
UNIT A
REFERENCES
OUTLINE
VERSION EUROPEAN
PROJECTION ISSUE DATE
IEC JEDEC JEITA
mm 5.2
5.0
b
0.48
0.40
c
0.45
0.38
D
4.8
4.4
d
1.7
1.4
E
4.2
3.6
L
14.5
12.7
e
2.54
e1
1.27
L1(1)
max.
2.5
b1
0.66
0.55
DIMENSIONS (mm are the original dimensions)
Note
1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities.
SOT54 TO-92 SC-43A 04-06-28
04-11-16
A L
0 2.5 5 mm
scale
b
c
D
b1L1
d
E
Plastic single-ended leaded (through hole) package; 3 leads SOT54
e1e
1
2
3
9397 750 14022 © Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet Rev. 05 — 21 January 2005 14 of 19
Philips Semiconductors BC817; BC817W; BC337
45 V, 500 mA NPN general-purpose transistors
Fig 16. Package outline SOT54A.
UNIT A
REFERENCES
OUTLINE
VERSION EUROPEAN
PROJECTION ISSUE DATE
IEC JEDEC JEITA
mm 5.2
5.0
b
0.48
0.40
c
0.45
0.38
D
4.8
4.4
d
1.7
1.4
E
4.2
3.6
L
14.5
12.7 3
2
e
5.08
e1L2
2.54
L1(1)
max.
3
b1
0.66
0.55
DIMENSIONS (mm are the original dimensions)
Note
1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities.
SOT54A 97-05-13
04-06-28
AL
0 2.5 5 mm
scale
b
c
D
b1
L1
L2
d
E
Plastic single-ended leaded (through hole) package; 3 leads (wide pitch) SOT54A
e1
e
1
2
3
9397 750 14022 © Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet Rev. 05 — 21 January 2005 15 of 19
Philips Semiconductors BC817; BC817W; BC337
45 V, 500 mA NPN general-purpose transistors
Fig 17. Package outline SOT54 variant.
UNIT A
REFERENCES
OUTLINE
VERSION EUROPEAN
PROJECTION ISSUE DATE
IEC JEDEC JEITA
mm 5.2
5.0
b
0.48
0.40
c
0.45
0.38
D
4.8
4.4
d
1.7
1.4
E
4.2
3.6
L
14.5
12.7
e
2.54
e1
1.27
L1(1)
max L2
max
2.5 2.5
b1
0.66
0.55
DIMENSIONS (mm are the original dimensions)
Note
1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities.
SOT54 variant
A L
0 2.5 5 mm
scale
b
c
D
b1L1
d
E
Plastic single-ended leaded (through hole) package; 3 leads (on-circle) SOT54 variant
1
2
3
L2
e1e
e1
04-06-28
05-01-10
9397 750 14022 © Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet Rev. 05 — 21 January 2005 16 of 19
Philips Semiconductors BC817; BC817W; BC337
45 V, 500 mA NPN general-purpose transistors
9. Packing information
[1] For further information and the availability of packing methods, see Section 14.
Table 9: Packing methods
The indicated -xxx are the last three digits of the 12NC ordering code.
[1]
Type number Package Description Packing quantity
3000 5000 10000
BC817 SOT23 4 mm pitch, 8 mm tape and reel -215 - -235
BC817W SOT323 4 mm pitch, 8 mm tape and reel -115 - -135
BC337 SOT54 bulk, straight leads - -412 -
BC337 SOT54A tape and reel, wide pitch - - -116
BC337 SOT54A tape ammopack, wide pitch - - -126
BC337 SOT 54 variant bulk, delta pinning (on-circle) - -112 -
9397 750 14022 © Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet Rev. 05 — 21 January 2005 17 of 19
Philips Semiconductors BC817; BC817W; BC337
45 V, 500 mA NPN general-purpose transistors
10. Revision history
Table 10: Revision history
Document ID Release date Data sheet status Change notice Doc. number Supersedes
BC817_BC817W_
BC337_5 20050121 Product data sheet CPCN200302007F1 9397 750 14022 BC817_4;
BC817W_SER_4;
BC337_3
Modifications: The format of the data sheet has been redesigned to comply with the new presentation and
information standard of Philips Semiconductors.
This data sheet is a combination of the previous data sheets BC817_4, BC817W_SER_4 and
BC337_3.
Table 1 and 2 added
Table 3 Discrete pinning for SOT54A and SOT54 variant added
Table 5 Marking codes for BC337, BC337-16, BC337-25 and BC337-40 added
Table 8 Typical value for Cc changed to 3 pF according to CPCN200302007F1
Figure 1,2 and 3 amended
Figure 4,5,6,7,8,9,10,11 and 12 added
Figure 15 changed according to CPCN200405006F
Figure 16 and 17 added
Section 9 added
BC817_4 20040105 Product specification - 9397 750 12394 BC817_3
BC817W_SER_4 20040225 Product specification - 9397 750 11944 BC817W_SER_3
BC337_3 19990415 Product specification - 9397 750 05676 BC337_338_CNV_2
Philips Semiconductors BC817; BC817W; BC337
45 V, 500 mA NPN general-purpose transistors
9397 750 14022 © Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet Rev. 05 — 21 January 2005 18 of 19
11. Data sheet status
[1] Please consult the most recently issued data sheet before initiating or completing a design.
[2] The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at
URL http://www.semiconductors.philips.com.
[3] For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.
12. Definitions
Short-form specification — The data in a short-form specification is
extracted from a full data sheet with the same type number and title. For
detailed information see the relevant data sheet or data handbook.
Limiting values definition — Limiting values given are in accordance with
the Absolute Maximum Rating System (IEC 60134). Stress above one or
more of the limiting values may cause permanent damage to the device.
These are stress ratings only and operation of the device at these or at any
other conditions above those given in the Characteristics sections of the
specification is not implied. Exposure to limiting values for extended periods
may affect device reliability.
Application information — Applications that are described herein for any
of these products are for illustrative purposes only. Philips Semiconductors
make no representation or warranty that such applications will be suitable for
the specified use without further testing or modification.
13. Disclaimers
Life support — These products are not designed for use in life support
appliances, devices, or systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips Semiconductors
customers using or selling these products for use in such applications do so
at their own risk and agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Right to make changes — Philips Semiconductors reserves the right to
make changes in the products - including circuits, standard cells, and/or
software - described or contained herein in order to improve design and/or
performance. When the product is in full production (status ‘Production’),
relevant changes will be communicated via a Customer Product/Process
Change Notification (CPCN). Philips Semiconductors assumes no
responsibility or liability for the use of any of these products, conveys no
license or title under any patent, copyright, or mask work right to these
products, and makes no representations or warranties that these products are
free from patent, copyright, or mask work right infringement, unless otherwise
specified.
14. Contact information
For additional information, please visit: http://www.semiconductors.philips.com
For sales office addresses, send an email to: sales.addresses@www.semiconductors.philips.com
Level Data sheet status[1] Product status[2] [3] Definition
I Objective data Development This data sheet contains data from the objective specification for product development. Philips
Semiconductors reserves the right to change the specification in any manner without notice.
II Preliminary data Qualification This data sheet contains data from the preliminary specification. Supplementary data will be published
at a later date. Philips Semiconductors reserves the right to change the specification without notice, in
order to improve the design and supply the best possible product.
III Product data Production This data sheet contains data from the product specification. Philips Semiconductors reserves the
right to make changes at any time in order to improve the design, manufacturing and supply. Relevant
changes will be communicated via a Customer Product/Process Change Notification (CPCN).
© Koninklijke Philips Electronics N.V. 2005
All rights are reserved. Reproduction in whole or in part is prohibited without the prior
written consent of the copyright owner. The information presented in this document does
not form part of any quotation or contract, is believed to be accurate and reliable and may
be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under
patent- or other industrial or intellectual property rights.Date of release: 21 January 2005
Document number: 9397 750 14022
Published in The Netherlands
Philips Semiconductors BC817; BC817W; BC337
45 V, 500 mA NPN general-purpose transistors
15. Contents
1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.1 General description. . . . . . . . . . . . . . . . . . . . . . 1
1.2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.4 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1
2 Pinning information. . . . . . . . . . . . . . . . . . . . . . 2
3 Ordering information. . . . . . . . . . . . . . . . . . . . . 3
4 Marking. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
5 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 4
6 Thermal characteristics. . . . . . . . . . . . . . . . . . . 4
7 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 5
8 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 11
9 Packing information. . . . . . . . . . . . . . . . . . . . . 16
10 Revision history. . . . . . . . . . . . . . . . . . . . . . . . 17
11 Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 18
12 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
13 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
14 Contact information . . . . . . . . . . . . . . . . . . . . 18