© Semiconductor Components Industries, LLC, 2015
December, 2015 − Rev. 0 1Publication Order Number:
74LVC541A/D
74LVC541A
Low-Voltage CMOS Octal
Buffer Flow Through Pinout
With 5 V−Tolerant Inputs and Outputs
(3−State, Non−Inverting)
The 74LVC541A is a high performance, non−inverting octal buffer
operating from a 1.2 to 3.6 V supply. This device is similar in function
to the MC74LCX244, while providing flow through architecture.
High impedance TTL compatible inputs significantly reduce current
loading to input drivers while TTL compatible outputs offer improved
switching noise performance. A VI specification of 5.5 V allows
74LVC541A inputs to be safely driven from 5 V devices. The
74LVC541A is suitable for memory address driving and all TTL level
bus oriented transceiver applications.
Current drive capability is 24 mA at the outputs. The Output Enable
(OE1. OE2) inputs, when HIGH, disables the output by placing them
in a HIGH Z condition.
Features
De signed for 1.2 to 3.6 V VCC Operation
5 V Tolerant − Interface Capability With 5 V TTL Logic
Supports Live Insertion and Withdrawal
IOFF Specification Guarantees High Impedance When VCC = 0 V
24 mA Output Sink and Source Capability
Near Zero Static Supply Current in All Three Logic States (10 mA)
Substantially Reduces System Power Requirements
Latchup Performance Exceeds 250 mA
ESD Performance:
Human Body Model > 2000 V
Machine Model > 200 V
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MARKING DIAGRAMS
See detailed ordering and shipping information in the package
dimensions section on page 7 of this data sheet.
ORDERING INFORMATION
www.onsemi.com
1
20
A = Assembly Location
L, WL = Wafer Lot
Y, YY = Year
W, WW = Work Week
G or G= Pb−Free Package
SOIC−20 WB
LVC541A
AWLYYWWG
LVC
541A
ALYW G
G
TSSOP−20
20
1
(Note: Microdot may be in either location)
SOIC−20 WB
DW SUFFIX
CASE 751D
TSSOP−20
DT SUFFIX
CASE 948E
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2
Figure 1. Pinout: 20−Lead (Top View)
1920 18 17 16 15 14
21 34567
VCC
13
8
12
9
11
10
OE2 O0 O1 O2 O3 O4 O5 O6 O7
OE1 D0 D1 D2 D3 D4 D5 D6 D7 GND
Figure 2. Logic Diagram
OE1 1
D0 2O0
18
D1 3O1
17
D2 4O2
16
D3 5O3
15
D4 6O4
14
D5 7O5
13
D6 8O6
12
D7 9O7
11
OE2 19
PIN NAMES
Function
Output Enable Inputs
Data Inputs
3−State Outputs
Pins
OEn
Dn
On
TRUTH TABLE
Inputs Outputs
OE1 OE2 Dn On
L L L L
L L H H
X H X Z
H X X Z
H = High Voltage Level; L = Low Voltage Level; Z = High Impedance State;
X = High or Low Voltage Level and Transitions are Acceptable, for ICC reasons,
DO NOT FLOAT Inputs
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MAXIMUM RATINGS
Symbol Parameter Value Condition Unit
VCC DC Supply Voltage −0.5 to +6.5 V
VIDC Input Voltage −0.5 VI +6.5 V
VODC Output Voltage −0.5 VO +6.5 Output in 3−State V
−0.5 VO VCC + 0.5 Output in HIGH or LOW State
(Note 1) V
IIK DC Input Diode Current −50 VI < GND mA
IOK DC Output Diode Current −50 VO < GND mA
+50 VO > VCC mA
IODC Output Source/Sink Current ±50 mA
ICC DC Supply Current Per Supply Pin ±100 mA
IGND DC Ground Current Per Ground Pin ±100 mA
TSTG Storage Temperature Range −65 to +150 °C
TLLead Temperature, 1 mm from Case for
10 Seconds TL = 260 °C
TJJunction Temperature Under Bias TJ = 135 °C
qJA Thermal Resistance (Note 2) SOIC = 65.8
TSSOP = 110.7 °C/W
MSL Moisture Sensitivity Level 1
ILATCHUP Latch−up Performance at VCC = 3.6 V
and 125°C (Note 3) ±250 mA
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be af fected.
1. IO absolute maximum rating must be observed.
2. Measured with minimum pad spacing on an FR4 board, using 10 mm−by−1 inch, 2 ounce copper trace no air flow.
3. Tested to EIA/JES078.
RECOMMENDED OPERATING CONDITIONS
Symbol Parameter Min Typ Max Units
VCC Supply Voltage
Operating
Functional 1.65
1.2 3.6
3.6
V
VIInput Voltage 0 5.5 V
VOOutput Voltage
HIGH or LOW State
3−State 0
0VCC
5.5
V
IOH HIGH Level Output Current
VCC = 3.0 V − 3.6 V
VCC = 2.7 V − 3.0 V −24
−12
mA
IOL LOW Level Output Current
VCC = 3.0 V − 3.6 V
VCC = 2.7 V − 3.0 V 24
12
mA
TAOperating Free−Air Temperature −40 +125 °C
Dt/DVInput Transition Rise or Fall Rate, VIN from 0.8 V to 2.0 V, VCC = 3.0 V 0 10 ns/V
Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond
the Recommended Operating Ranges limits may affect device reliability.
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DC ELECTRICAL CHARACTERISTICS
Symbol Parameter Conditions
−405C to +855C−405C to +1255C
Unit
Min Typ
(Note 4) Max Min Typ
(Note 4) Max
VIH HIGH−level input
voltage VCC = 1.2 V 1.08 1.08 V
VCC = 1.65 V to 1.95 V 0.65 x
VCC 0.65 x
VCC
VCC = 2.3 V to 2.7 V 1.7 1.7
VCC = 2.7 V to 3.6 V 2.0 2.0
VIL LOW−level input
voltage VCC = 1.2 V 0.12 0.12 V
VCC = 1.65 V to 1.95 V 0.35 x
VCC 0.35 x
VCC
VCC = 2.3 V to 2.7 V 0.7 0.7
VCC = 2.7 V to 3.6 V 0.8 0.8
VOH HIGH−level output
voltage VI = VIH or VIL V
IO = −100 mA;
VCC = 1.65 V to 3.6 V VCC
0.2 VCC
0.3
IO = −4 mA; VCC = 1.65 V 1.2 1.05
IO = −8 mA; VCC = 2.3 V 1.8 1.65
IO = −12 mA; VCC = 2.7 V 2.2 2.05
IO = −18 mA; VCC = 3.0 V 2.4 2.25
IO = −24 mA; VCC = 3.0 V 2.2 2.0
VOL LOW−level output
voltage VI = VIH or VIL V
IO = 100 mA;
VCC = 1.65 V to 3.6 V 0.2 0.3
IO = 4 mA; VCC = 1.65 V 0.45 0.65
IO = 8 mA; VCC = 2.3 V 0.6 0.8
IO = 12 mA; VCC = 2.7 V 0.4 0.6
IO = −24 mA; VCC = 3.0 V 0.55 0.8
IIInput leakage current VI = 5.5V or GND VCC = 3.6 V ±0.1 ±5 ±0.1 ±20 mA
IOZ OFF−state output
current VI = VIH or VIL;
VO = 5.5 V or GND; VCC = 3.6 V ±0.1 ±5 ±0.1 ±20 mA
IOFF Power−off leakage
current VI or VO = 5.5 V; VCC = 0.0 V ±0.1 ±10 ±0.1 ±20 mA
ICC Supply current VI = VCC or GND; IO = 0 A;
VCC = 3.6 V 0.1 10 0.1 40 mA
DICC Additional supply
current per input pin;
VI = VCC − 0.6 V ; IO = 0 A;
VCC = 2.7 V to 3.6 V
5 500 5 5000 mA
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
4. All typical values are measured at TA = 25°C and VCC = 3.3 V, unless stated otherwise.
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5
AC ELECTRICAL CHARACTERISTICS (tR = tF = 2.5 ns)
Symbol Parameter Conditions
−405C to +855C−405C to +1255C
Unit
Min Typ1Max Min Typ1Max
tpd Propagation Delay (Note 6)
nAn to nYn VCC = 1.2 V 14.0 ns
VCC = 1.65 V to 1.95 V 1.5 6.5 13.8 1.5 16.0
VCC = 2.3 V to 2.7 V 1.0 3.5 6.8 1.0 7.9
VCC = 2.7 V 1.5 3.5 5.6 1.5 7.0
VCC = 3.0 V to 3.6 V 1.0 2.9 5.1 1.0 6.5
ten Enable Time (Note 7)
nOE to nYn VCC = 1.2 V 20.0 ns
VCC = 1.65 V to 1.95 V 1.8 7.7 16.0 1.8 18.5
VCC = 2.3 V to 2.7 V 1.5 4.3 8.8 1.5 10.2
VCC = 2.7 V 1.5 4.4 7.5 1.5 9.5
VCC = 3.0 V to 3.6 V 1.0 3.5 7.0 1.0 9.0
tdis Disable Time (Note 8)
nOE to nYn VCC = 1.2 V 11.0 ns
VCC = 1.65 V to 1.95 V 3.0 4.9 10.3 3.0 11.9
VCC = 2.3 V to 2.7 V 1.0 2.7 5.9 1.0 6.8
VCC = 2.7 V 1.5 3.7 7.0 1.5 9.0
VCC = 3.0 V to 3.6 V 1.0 3.3 6.0 1.0 7.5
tsk(0) Output Skew Time (Note 9) 1 1.5 ns
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
5. Typical values are measured at TA = 25°C and VCC = 3.3 V, unless stated otherwise.
6. tpd is the same as tPLH and tPHL.
7. ten is the same as tPZL and tPZH.
8. tdis is the same as tPLZ and tPHZ.
9. Skew between any two outputs of the same package switching in the same direction. This parameter is guaranteed by design.
DYNAMIC SWITCHING CHARACTERISTICS
Symbo
l
Characteristic Condition
TA = +25°C
Unit
Min Typ Max
VOLP Dynamic LOW Peak Voltage (Note 10) VCC = 3.3 V, CL = 50 pF, VIH = 3.3 V, VIL = 0 V
VCC = 2.5 V, CL = 30 pF, VIH = 2.5 V, VIL = 0 V 0.8
0.6 V
VOLV Dynamic LOW Valley Voltage (Note
10) VCC = 3.3 V, CL = 50 pF, VIH = 3.3 V, VIL = 0 V
VCC = 2.5 V, CL = 30 pF, VIH = 2.5 V, VIL = 0 V −0.8
−0.6 V
10.Number of outputs defined as “n”. Measured with “n−1” outputs switching from HIGH−to−LOW or LOW−to−HIGH. The remaining output is
measured in the LOW state.
CAPACITIVE CHARACTERISTICS
Symbol Parameter Condition Typical Unit
CIN Input Capacitance VCC = 3.3 V, VI = 0 V or VCC 4.0 pF
COUT Output Capacitance VCC = 3.3 V, VI = 0 V or VCC 5.0 pF
CPD Power Dissipation Capacitance
(Note 11) Per input; VI = GND or VCC pF
VCC = 1.65 V to 1.95 V 7.7
VCC = 2.3 V to 2.7 V 11.3
VCC = 3.0 V to 3.6 V 14.4
11. CPD is used to determine the dynamic power dissipation (PD in mW).
PD = CPD * VCC2 x fi * N + S (CL x VCC2 x fo) where:
fi = input frequency in MHz; fo = output frequency in MHz
CL = output load capacitance in pF VCC = supply voltage in Volts
N = number of outputs switching
S(CL * VCC2 x fo) = sum of the outputs.
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6
WAVEFORM 1 - PROPAGATION DELAYS
tR = tF = 2.5 ns, 10% to 90%; f = 1 MHz; tW = 500 ns
2.7 V
0 V
VOH
VOL
Dn
On
tPHL
tPLH
WAVEFORM 2 - OUTPUT ENABLE AND DISABLE TIMES
tR = tF = 2.5 ns, 10% to 90%; f = 1 MHz; tW = 500 ns
2.7 V
0 V
0 V
OEn
On
tPZH
3.0 V
tPHZ
tPZL tPLZ
On
1.5 V
1.5 V
1.5 V1.5 V
1.5 V 1.5 V
Figure 3. AC Waveforms
1.5 V
VCC
VOH - 0.3 V
VOL + 0.3 V
GND
Symbol
VCC
3.3 V ± 0.3 V 2.7 V VCC < 2.7 V
Vmi
Vmo
VHZ
VLZ
1.5 V
1.5 V
VOL + 0.3 V
VOH − 0.3 V
1.5 V
1.5 V
VOL + 0.3 V
VOH − 0.3 V
VCC/2
VCC/2
VOL + 0.15 V
VOH − 015 V
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7
OPEN
PULSE
GENERATOR
RT
DUT
VCC
RL
R1
CL
VEXT
GND
CL includes jig and probe capacitance
RT = ZOUT of pulse generator (typically 50 W)
R1 = RL
VIVO
Supply Voltage Input Load VEXT
VCC (V) VItr, tfCLRLtPLH, tPHL tPLZ, tPZL tPHZ, tPZH
1.2 VCC 2 ns 30 pF 1 kWOpen 2 x VCC GND
1.65 − 1.95 VCC 2 ns 30 pF 1 kWOpen 2 x VCC GND
2.3 − 2.7 VCC 2 ns 30 pF 500 WOpen 2 x VCC GND
2.7 2.7 V 2.5 ns 50 pF 500 WOpen 2 x VCC GND
3 − 3.6 2.7 V 2.5 ns 50 pF 500 WOpen 2 x VCC GND
Figure 4. Test Circuit
ORDERING INFORMATION
Device Package Shipping
74LVC541ADWR2G SOIC−20
(Pb−Free) 1000 / Tape & Reel
74LVC541ADTR2G TSSOP−20
(Pb−Free) 2500 / Tape & Reel
For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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8
PACKAGE DIMENSIONS
TSSOP−20
CASE 948E−02
ISSUE C
DIM
A
MIN MAX MIN MAX
INCHES
6.60 0.260
MILLIMETERS
B4.30 4.50 0.169 0.177
C1.20 0.047
D0.05 0.15 0.002 0.006
F0.50 0.75 0.020 0.030
G0.65 BSC 0.026 BSC
H0.27 0.37 0.011 0.015
J0.09 0.20 0.004 0.008
J1 0.09 0.16 0.004 0.006
K0.19 0.30 0.007 0.012
K1 0.19 0.25 0.007 0.010
L6.40 BSC 0.252 BSC
M0 8 0 8
____
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION:
MILLIMETER.
3. DIMENSION A DOES NOT INCLUDE
MOLD FLASH, PROTRUSIONS OR GATE
BURRS. MOLD FLASH OR GATE BURRS
SHALL NOT EXCEED 0.15 (0.006) PER SIDE.
4. DIMENSION B DOES NOT INCLUDE
INTERLEAD FLASH OR PROTRUSION.
INTERLEAD FLASH OR PROTRUSION
SHALL NOT EXCEED 0.25 (0.010) PER SIDE.
5. DIMENSION K DOES NOT INCLUDE
DAMBAR PROTRUSION. ALLOWABLE
DAMBAR PROTRUSION SHALL BE 0.08
(0.003) TOTAL IN EXCESS OF THE K
DIMENSION AT MAXIMUM MATERIAL
CONDITION.
6. TERMINAL NUMBERS ARE SHOWN FOR
REFERENCE ONLY.
7. DIMENSION A AND B ARE TO BE
DETERMINED AT DATUM PLANE −W−.
ÍÍÍÍ
ÍÍÍÍ
ÍÍÍÍ
110
1120
PIN 1
IDENT
A
B
−T−
0.100 (0.004)
C
DGH
SECTION N−N
K
K1
JJ1
N
N
M
F
−W−
SEATING
PLANE
−V−
−U−
S
U
M
0.10 (0.004) V S
T
20X REFK
L
L/2
2X
S
U0.15 (0.006) T
DETAIL E
0.25 (0.010)
DETAIL E 6.40 0.252
--- ---
S
U0.15 (0.006) T
7.06
16X
0.36 16X
1.26
0.65
DIMENSIONS: MILLIMETERS
1
PITCH
SOLDERING FOOTPRINT*
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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9
PACKAGE DIMENSIONS
20
1
11
10
B20X
H10X
C
L
18X A1
A
SEATING
PLANE
q
hX 45_
E
D
M
0.25 M
B
M
0.25 S
AS
B
T
eT
B
A
DIM MIN MAX
MILLIMETERS
A2.35 2.65
A1 0.10 0.25
B0.35 0.49
C0.23 0.32
D12.65 12.95
E7.40 7.60
e1.27 BSC
H10.05 10.55
h0.25 0.75
L0.50 0.90
q0 7
NOTES:
1. DIMENSIONS ARE IN MILLIMETERS.
2. INTERPRET DIMENSIONS AND TOLERANCES
PER ASME Y14.5M, 1994.
3. DIMENSIONS D AND E DO NOT INCLUDE MOLD
PROTRUSION.
4. MAXIMUM MOLD PROTRUSION 0.15 PER SIDE.
5. DIMENSION B DOES NOT INCLUDE DAMBAR
PROTRUSION. ALLOWABLE PROTRUSION
SHALL BE 0.13 TOTAL IN EXCESS OF B
DIMENSION AT MAXIMUM MATERIAL
CONDITION.
__
SOIC−20 WB
CASE 751D−05
ISSUE G
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P
UBLICATION ORDERING INFORMATION
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USA/Canada
Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
Japan Customer Focus Center
Phone: 81−3−5817−1050
74LVC541A/D
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