CMKT3904 NPN/NPN
CMKT3906 PNP/PNP
SURFACE MOUNT SILICON
DUAL SMALL SIGNAL
SWITCHING TRANSISTORS
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CMKT3904 (two
single NPN) and CMKT3906 (two single PNP) are silicon
transistors in a space saving SOT-363 package, designed
for small signal general purpose amplifier and switching
applications.
MARKING CODES: CMKT3904: K04
CMKT3906: K06
MAXIMUM RATINGS: (TA=25°C) SYMBOL NPN PNP UNITS
Collector-Base Voltage VCBO 60 40 V
Collector-Emitter Voltage VCEO 40 40 V
Emitter-Base Voltage VEBO 6.0 5.0 V
Continuous Collector Current IC 200 mA
Power Dissipation PD 350 mW
Operating and Storage Junction Temperature TJ, Tstg -65 to +150 °C
Thermal Resistance ΘJA 357 °C/W
ELECTRICAL CHARACTERISTICS PER TRANSISTOR: (TA=25°C unless otherwise noted)
NPN PNP
SYMBOL TEST CONDITIONS MIN MAX MIN MAX UNITS
ICEV V
CE=30V, VEB=3.0V - 50 - 50 nA
IBL V
CE=30V, VEB=3.0V - 50 - - nA
BVCBO I
C=10μA 60 - 40 - V
BVCEO I
C=1.0mA 40 - 40 - V
BVEBO I
E=10μA 6.0 - 5.0 - V
VCE(SAT) I
C=10mA, IB=1.0mA - 0.20 - 0.25 V
VCE(SAT) I
C=50mA, IB=5.0mA - 0.30 - 0.40 V
VBE(SAT) I
C=10mA, IB=1.0mA 0.65 0.85 0.65 0.85 V
VBE(SAT) I
C=50mA, IB=5.0mA - 0.95 - 0.95 V
hFE V
CE=1.0V, IC=0.1mA 40 - 60 -
hFE V
CE=1.0V, IC=1.0mA 70 - 80 -
hFE V
CE=1.0V, IC=10mA 100 300 100 300
hFE V
CE=1.0V, IC=50mA 60 - 60 -
hFE V
CE=1.0V, IC=100mA 30 - 30 -
fT V
CE=20V, IC=10mA, f=100MHz 300 - 250 - MHz
Cob V
CB=5.0V, IE=0, f=1.0MHz - 4.0 - 4.5 pF
Cib V
BE=0.5V, IC=0, f=1.0MHz - 8.0 - 10 pF
FEATURES:
• Two NPN (3904) or Two PNP (3906)
Transistors in a single package
SOT-363 CASE
R6 (23-September 2013)
www.centralsemi.com