A29040A-90 - AMIC Technology, Corp.

A29040A Series

512K X 8 Bit CMOS 5.0 Volt-only,

Preliminary Uniform Sector Flash Memory

PRELIMINARY (August, 2001, Version 0.1) 1 AMIC Technology, Inc.

Features

n 5.0V ± 10% for read and write operations

n Access times:

- 55/70/90 (max.)

n Current:

- 20 mA typical active read current

- 30 mA typical program/erase current

- 1 µA typical CMOS standby

n Flexible sector architecture

- 8 uniform sectors of 64 Kbyte each

- Any combination of sectors can be erased

- Supports full chip erase

- Sector protection:

A hardware method of protecting sectors to prevent

any inadvertent program or erase operations within

that sector

n Embedded Erase Algorithms

- Embedded Erase algorithm will automatically erase

the entire chip or any combination of designated

sectors and verify the erased sectors

- Embedded Program algorithm automatically writes

and verifies bytes at specified addresses

n Typical 100,000 program/erase cycles per sector

n 20-year data retention at 125°C

- Reliable operation for the life of the system

n Compatible with JEDEC-standards

- Pinout and software compatible with single-power-

supply Flash memory standard

- Superior inadvertent write protection

Data Polling and toggle bits

- Provides a software method of detecting completion

of program or erase operations

n Erase Suspend/Erase Resume

- Suspends a sector erase operation to read data from,

or program data to, a non-erasing sector, then

resumes the erase operation

n Package options

- 32-pin P-DIP, PLCC, or TSOP (Forward type)

General Description

The A29040A is a 5.0 volt-only Flash memory organized as

524,288 bytes of 8 bits each. The 512 Kbytes of data are

further divided into eight sectors of 64 Kbytes each for flexible

sector erase capability. The 8 bits of data appear on I/O0 - I/O7

while the addresses are input on A0 to A18. The A29040A is

offered in 32-pin PLCC, TSOP, and PDIP packages. This

device is designed to be programmed in-system with the

standard system 5.0 volt VCC supply. Additional 12.0 volt VPP

is not required for in-system write or erase operations.

However, the A29040A can also be programmed in standard

EPROM programmers.

The A29040A has a second toggle bit, I/O2, to indicate

whether the addressed sector is being selected for erase, and

also offers the ability to program in the Erase Suspend mode.

The standard A29040A offers access times of 55, 70 and 90

ns, allowing high-speed microprocessors to operate without

wait states. To eliminate bus contention the device has

separate chip enable (CE), write enable (

) and output

enable (OE) controls.

The device requires only a single 5.0 volt power supply for

both read and write functions. Internally generated and

regulated voltages are provided for the program and erase

operations.

The A29040A is entirely software command set compatible

with the JEDEC single-power-supply Flash standard.

Commands are written to the command register using

standard microprocessor write timings. Register contents

serve as input to an internal state-machine that controls the

erase and programming circuitry. Write cycles also internally

latch addresses and data needed for the programming and

erase operations. Reading data out of the device is similar to

reading from other Flash or EPROM devices.

Device programming occurs by writing the proper program

command sequence. This initiates the Embedded Program

algorithm - an internal algorithm that automatically times the

program pulse widths and verifies proper program margin.

Device erasure occurs by executing the proper erase

command sequence. This initiates the Embedded Erase

algorithm - an internal algorithm that automatically

preprograms the array (if it is not already programmed)

before executing the erase operation. During erase, the

device automatically times the erase pulse widths and

verifies proper erase margin.

A29040A Series

PRELIMINARY (August, 2001, Version 0.1) 2 AMIC Technology, Inc.

The host system can detect whether a program or erase

operation is complete by reading the I/O7 (Data Polling) and

I/O6 (toggle) status bits. After a program or erase cycle has

been completed, the device is ready to read array data or

accept another command.

The sector erase architecture allows memory sectors to be

erased and reprogrammed without affecting the data contents

of other sectors. The A29040A is fully erased when shipped

from the factory.

Pin Configurations

The hardware sector protection feature disables operations

for both program and erase in any combination of the sectors

of memory. This can be achieved via programming

equipment.

The Erase Suspend feature enables the user to put erase on

hold for any period of time to read data from, or program data

to, any other sector that is not selected for erasure. True

background erase can thus be achieved.

Power consumption is greatly reduced when the device is

placed in the standby mode.

n DIP n PLCC

A18

A16

A15

A12

I/O0

I/O1

I/O2

I/O3VSS

I/O4

I/O5

I/O6

I/O7

A10

A13

A17

A14

VCC

A11

A29040A

16 17

I/O021

I/O7

A10

A29040AL OE

A11

A13

A14

I/O1

I/O2

VSS

I/O3

I/O4

I/O5

I/O6

A12

A15

A16

A18

VCC

A17

n TSOP (Forward type)

A29040AV

A13

A14

A17

VCC

A18

A16

A15

A12

17 A3

I/O

VSS

I/O

A10

OEA11

A29040A Series

PRELIMINARY (August, 2001, Version 0.1) 3 AMIC Technology, Inc.

Block Diagram

Pin Descriptions

Pin No. Description

A0 - A18 Address Inputs

I/O0 - I/O7 Data Inputs/Outputs

CE Chip Enable

Write Enable

OE Output Enable

VSS Ground

VCC Power Supply

State

Control

Command

Address Latch

X-decoder

Y-Decoder

Chip Enable

Output Enable

Logic

Cell Matrix

Y-Gating

VCC Detector

PGM Voltage

Generator

Data Latch

Input/Output

Buffers

Erase Voltage

Generator

VCC

VSS

A0-A18

I/O0 - I/O7

Timer

STB

A29040A Series

PRELIMINARY (August, 2001, Version 0.1) 4 AMIC Technology, Inc.

Absolute Maximum Ratings*

Ambient Operating Temperature . . . . . -55°C to + 125°C

Storage Temperature . . . . . . . . . . . . . . -65°C to + 125°C

VCC to Ground . . . . . . . . . . . . . . . . . . . . . . -2.0V to 7.0V

Output Voltage (Note 1) . . . . . . . . . . . . . . . -2.0V to 7.0V

A9 & OE (Note 2) . . . . . . . . . . . . . . . . . . . -2.0V to 12.5V

All other pins (Note 1) . . . . . . . . . . . . . . . . . -2.0V to 7.0V

Output Short Circuit Current (Note 3) . . . . . . . . . . 200mA

Notes:

1. Minimum DC voltage on input or I/O pins is -0.5V.

During voltage transitions, inputs may undershoot VSS

to -2.0V for periods of up to 20ns. Maximum DC voltage

on output and I/O pins is VCC +0.5V. During voltage

transitions, outputs may overshoot to VCC +2.0V for

periods up to 20ns.

2. Minimum DC input voltage on A9 pins is -0.5V. During

voltage transitions, A9 and OE may overshoot VSS to

-2.0V for periods of up to 20ns. Maximum DC input

voltage on A9 and OE is +12.5V which may overshoot

to 13.5V for periods up to 20ns.

3. No more than one output is shorted at a time. Duration

of the short circuit should not be greater than one

second.

*Comments

Stresses above those listed under "Absolute Maximum

Ratings" may cause permanent damage to this device.

These are stress ratings only. Functional operation of

this device at these or any other conditions above

those indicated in the operational sections of these

specification is not implied or intended. Exposure to

the absolute maximum rating conditions for extended

periods may affect device reliability.

Operating Ranges

Commercial (C) Devices

Ambient Temperature (TA) . . . . . . . . . . . . . 0°C to +70°C

VCC Supply Voltages

VCC for ± 10% devices . . . . . . . . . . . . . +4.5V to +5.5V

Operating ranges define those limits between which the

functionally of the device is guaranteed.

Device Bus Operations

This section describes the requirements and use of the

device bus operations, which are initiated through the

internal command register. The command register itself

does not occupy any addressable memory location. The

along with the address and data information needed to

execute the command. The contents of the register serve

as inputs to the internal state machine. The state machine

outputs dictate the function of the device. The appropriate

device bus operations table lists the inputs and control

levels required, and the resulting output. The following

subsections describe each of these operations in further

detail.

Table 1. A29040A Device Bus Operations

Operation

A0 – A18 I/O0 - I/O7

Read L L H AIN DOUT

Write L H L AIN DIN

CMOS Standby VCC ± 0.5 V X X X High-Z

TTL Standby H X X X High-Z

Output Disable L H H X High-Z

Legend:

L = Logic Low = VIL, H = Logic High = VIH, VID = 12.0 ± 0.5V, X = Don't Care, DIN = Data In, DOUT = Data Out, AIN = Address In

Note: See the "Sector Protection/Unprotection" section, for more information.

A29040A Series

PRELIMINARY (August, 2001, Version 0.1) 5 AMIC Technology, Inc.

Requirements for Reading Array Data

To read array data from the outputs, the system must drive

the CEand OE pins to VIL. CE is the power control and

selects the device. OE is the output control and gates

array data to the output pins.

should remain at VIH all

the time during read operation. The internal state machine

is set for reading array data upon device power-up, or after

a hardware reset. This ensures that no spurious alteration

of the memory content occurs during the power transition.

No command is necessary in this mode to obtain array

data. Standard microprocessor read cycles that assert valid

addresses on the device address inputs produce valid data

on the device data outputs. The device remains enabled for

read access until the command register contents are

altered.

See "Reading Array Data" for more information. Refer to the

AC Read Operations table for timing specifications and to

the Read Operations Timings diagram for the timing

waveforms, lCC1 in the DC Characteristics table represents

the active current specification for reading array data.

Writing Commands/Command Sequences

To write a command or command sequence (which

includes programming data to the device and erasing

sectors of memory), the system must drive

and CE to

VIL, and OE to VIH. An erase operation can erase one

sector, multiple sectors, or the entire device. The Sector

Address Tables indicate the address range that each sector

occupies. A "sector address" consists of the address inputs

required to uniquely select a sector. See the "Command

Definitions" section for details on erasing a sector or the

entire chip, or suspending/resuming the erase operation.

After the system writes the autoselect command sequence,

the device enters the autoselect mode. The system can

then read autoselect codes from the internal register (which

is separate from the memory array) on I/O7 - I/O0. Standard

read cycle timings apply in this mode. Refer to the

"Autoselect Mode" and "Autoselect Command Sequence"

sections for more information.

ICC2 in the Characteristics table represents the active

current specification for the write mode. The "AC

Characteristics" section contains timing specification tables

and timing diagrams for write operations.

Program and Erase Operation Status

During an erase or program operation, the system may

check the status of the operation by reading the status bits

on I/O7 - I/O0. Standard read cycle timings and ICC read

specifications apply. Refer to "Write Operation Status" for

more information, and to each AC Characteristics section

for timing diagrams.

Standby Mode

When the system is not reading or writing to the device, it

can place the device in the standby mode. In this mode,

current consumption is greatly reduced, and the outputs are

placed in the high impedance state, independent of the OE

input.

The device enters the CMOS standby mode when the CE

pin is held at VCC ± 0.5V. (Note that this is a more restricted

voltage range than VIH.) The device enters the TTL standby

mode when CE is held at VIH. The device requires the

standard access time (tCE) before it is ready to read data.

If the device is deselected during erasure or programming,

the device draws active current until the operation is

completed.

ICC3 in the DC Characteristics tables represents the standby

current specification.

Output Disable Mode

When the OE input is at VIH, output from the device is

disabled. The output pins are placed in the high impedance

state.

Table 2. Sector Addresses Table

Sector A18 A17 A16 Address Range

SA0 0 0 0 00000h - 0FFFFh

SA1 0 0 1 10000h - 1FFFFh

SA2 0 1 0 20000h - 2FFFFh

SA3 0 1 1 30000h - 3FFFFh

SA4 1 0 0 40000h - 4FFFFh

SA5 1 0 1 50000h - 5FFFFh

SA6 1 1 0 60000h - 6FFFFh

SA7 1 1 1 70000h - 7FFFFh

Note: All sectors are 64 Kbytes in size.

A29040A Series

PRELIMINARY (August, 2001, Version 0.1) 6 AMIC Technology, Inc.

Autoselect Mode

The autoselect mode provides manufacturer and device

identification, and sector protection verification, through

identifier codes output on I/O7 - I/O0. This mode is primarily

intended for programming equipment to automatically

match a device to be programmed with its corresponding

programming algorithm. However, the autoselect codes

can also be accessed in-system through the command

When using programming equipment, the autoselect mode

requires VID (11.5V to 12.5 V) on address pinA9. Address

pins A6, A1, and AO must be as shown in Autoselect

Codes (High Voltage Method) table. In addition, when

verifying sector protection, the sector address must appear

on the appropriate highest order address bits. Refer to the

corresponding Sector Address Tables. The Command

Definitions table shows the remaining address bits that are

don't care. When all necessary bits have been set as

required, the programming equipment may then read the

corresponding identifier code on I/O7 - I/O0.To access the

autoselect codes in-system, the host system can issue the

autoselect command via the command register, as shown

in the Command Definitions table. This method does not

require VID. See "Command Definitions" for details on

using the autoselect mode.

Table 3. A29040A Autoselect Codes (High Voltage Method)

Description A18 - A16 A15 - A10

A9 A8 - A7

A6 A5 - A2

A1 AO Identifier Code on

I/O7 - I/O0

Manufacturer ID: AMIC X X VID X VIL X VIL VIL 37h

Device ID: A29040A X X VID X VIL X VIL VIH 86h

0lh (protected)

Sector Protection

Verification Sector

Address X VID X VIL X VIH VIL 00h (unprotected)

Continuation ID X X VID X VIL X VIH VIH 7Fh

Sector Protection/Unprotection

The hardware sector protection feature disables both

program and erase operations in any sector. The hardware

sector unprotection feature re-enables both program and

erase operations in previously protected sectors.

Sector protection/unprotection must be implemented using

programming equipment. The procedure requires a high

voltage (VID) on address pin A9 and the control pins.

The device is shipped with all sectors unprotected.

It is possible to determine whether a sector is protected or

unprotected. See "Autoselect Mode" for details.

Hardware Data Protection

The requirement of command unlocking sequence for

programming or erasing provides data protection against

inadvertent writes (refer to the Command Definitions table).

In addition, the following hardware data protection measures

prevent accidental erasure or programming, which might

otherwise be caused by spurious system level signals during

VCC power-up transitions, or from system noise. The device

is powered up to read array data to avoid accidentally writing

data to the array.

Write Pulse "Glitch" Protection

Noise pulses of less than 5ns (typical) on OE,CE or

do not initiate a write cycle.

Logical Inhibit

Write cycles are inhibited by holding any one of OE =VIL,

CE = VIH or

= VIH. To initiate a write cycle, CE and

must be a logical zero while OE is a logical one.

Power-Up Write Inhibit

= CE = VIL and OE = VIH during power up, the

device does not accept commands on the rising edge of

. The internal state machine is automatically reset to

reading array data on the initial power-up.

A29040A Series

PRELIMINARY (August, 2001, Version 0.1) 7 AMIC Technology, Inc.

Command Definitions

Writing specific address and data commands or sequences

into the command register initiates device operations. The

Command Definitions table defines the valid register

command sequences. Writing incorrect address and data

values or writing them in the improper sequence resets the

device to reading array data.

All addresses are latched on the falling edge of

or CE,

whichever happens later. All data is latched on the rising

edge of

or CE, whichever happens first. Refer to the

appropriate timing diagrams in the "AC Characteristics"

section.

Reading Array Data

The device is automatically set to reading array data after

device power-up. No commands are required to retrieve

data. The device is also ready to read array data after

completing an Embedded Program or Embedded Erase

algorithm. After the device accepts an Erase Suspend

command, the device enters the Erase Suspend mode. The

system can read array data using the standard read timings,

except that if it reads at an address within erase-suspended

sectors, the device outputs status data. After completing a

programming operation in the Erase Suspend mode, the

system may once again read array data with the same

exception. See "Erase Suspend/Erase Resume Commands"

for more information on this mode.

The system must issue the reset command to re-enable the

device for reading array data if I/O5 goes high, or while in the

autoselect mode. See the "Reset Command" section, next.

See also "Requirements for Reading Array Data" in the

"Device Bus Operations" section for more information. The

Read Operations table provides the read parameters, and

Read Operation Timings diagram shows the timing diagram.

Reset Command

Writing the reset command to the device resets the device to

reading array data. Address bits are don't care for this

command. The reset command may be written between the

sequence cycles in an erase command sequence before

erasing begins. This resets the device to reading array data.

Once erasure begins, however, the device ignores reset

commands until the operation is complete.

The reset command may be written between the sequence

cycles in a program command sequence before

programming begins. This resets the device to reading array

data (also applies to programming in Erase Suspend mode).

Once programming begins, however, the device ignores

reset commands until the operation is complete.

The reset command may be written between the sequence

cycles in an autoselect command sequence. Once in the

autoselect mode, the reset command must be written to

return to reading array data (also applies to autoselect

during Erase Suspend).

If I/O5 goes high during a program or erase operation, writing

the reset command returns the device to reading array data

(also applies during Erase Suspend).

Autoselect Command Sequence

The autoselect command sequence allows the host system

to access the manufacturer and devices codes, and

determine whether or not a sector is protected. The

Command Definitions table shows the address and data

requirements. This method is an alternative to that shown in

the Autoselect Codes (High Voltage Method) table, which is

intended for PROM programmers and requires VID on

address bit A9.

The autoselect command sequence is initiated by writing two

unlock cycles, followed by the autoselect command. The

device then enters the autoselect mode, and the system

may read at any address any number of times, without

initiating another command sequence.

A read cycle at address XX00h retrieves the manufacturer

code and another read cycle at XX11h retrieves the

continuation code. A read cycle at address XX01h returns

the device code. A read cycle containing a sector address

(SA) and the address 02h in returns 01h if that sector is

protected, or 00h if it is unprotected. Refer to the Sector

Address tables for valid sector addresses.

The system must write the reset command to exit the

autoselect mode and return to reading array data.

Byte Program Command Sequence

Programming is a four-bus-cycle operation. The program

command sequence is initiated by writing two unlock write

cycles, followed by the program set-up command. The

program address and data are written next, which in turn

initiate the Embedded Program algorithm. The system is not

required to provide further controls or timings. The device

automatically provides internally generated program pulses

and verify the programmed cell margin. The Command

Definitions table shows the address and data requirements

for the byte program command sequence.

When the Embedded Program algorithm is complete, the

device then returns to reading array data and addresses are

no longer latched. The system can determine the status of

the program operation by using I/O7 or I/O6. See "Write

Operation Status" for information on these status bits.

Any commands written to the device during the Embedded

Program Algorithm are ignored. Programming is allowed in

any sequence and across sector boundaries. A bit cannot be

programmed from a "0" back to a "1 ". Attempting to do so

may halt the operation and set I/O5 to "1", or cause the

Data Polling algorithm to indicate the operation was

successful. However, a succeeding read will show that the

data is still "0". Only erase operations can convert a "0" to a

"1".

A29040A Series

PRELIMINARY (August, 2001, Version 0.1) 8 AMIC Technology, Inc.

Chip Erase Command Sequence

Chip erase is a six-bus-cycle operation. The chip erase

command sequence is initiated by writing two unlock cycles,

followed by a set-up command. Two additional unlock write

cycles are then followed by the chip erase command, which

in turn invokes the Embedded Erase algorithm. The device

does not require the system to preprogram prior to erase.

The Embedded Erase algorithm automatically preprograms

and verifies the entire memory for an all zero data pattern

prior to electrical erase. The system is not required to

provide any controls or timings during these operations. The

Command Definitions table shows the address and data

requirements for the chip erase command sequence.

Any commands written to the chip during the Embedded

Erase algorithm are ignored. The system can determine the

status of the erase operation by using I/O7, I/O6, or I/O2. See

"Write Operation Status" for information on these status bits.

When the Embedded Erase algorithm is complete, the

device returns to reading array data and addresses are no

longer latched.

Figure 2 illustrates the algorithm for the erase operation. See

the Erase/Program Operations tables in "AC Characteristics"

for parameters, and to the Chip/Sector Erase Operation

Timings for timing waveforms.

Sector Erase Command Sequence

Sector erase is a six-bus-cycle operation. The sector erase

command sequence is initiated by writing two unlock cycles,

followed by a set-up command. Two additional unlock write

cycles are then followed by the address of the sector to be

erased, and the sector erase command. The Command

Definitions table shows the address and data requirements

for the sector erase command sequence.

The device does not require the system to preprogram the

memory prior to erase. The Embedded Erase algorithm

automatically programs and verifies the sector for an all zero

data pattern prior to electrical erase. The system is not

required to provide any controls or timings during these

operations.

After the command sequence is written, a sector erase time-

out of 50µs begins. During the time-out period, additional

sector addresses and sector erase commands may be

written. Loading the sector erase buffer may be done in any

sequence, and the number of sectors may be from one

sector to all sectors. The time between these additional

cycles must be less than 50µs, otherwise the last address

and command might not be accepted, and erasure may

begin. It is recommended that processor interrupts be

disabled during this time to ensure all commands are

accepted. The interrupts can be re-enabled after the last

Sector Erase command is written. If the time between

additional sector erase commands can be assumed to be

less than 50µs, the system need not monitor I/O3. Any

command other than Sector Erase or Erase Suspend during

the time-out period resets the device to reading array data.

The system must rewrite the command sequence and any

additional sector addresses and commands.

The system can monitor I/O3 to determine if the sector erase

timer has timed out. (See the " I/O3: Sector Erase Timer"

section.) The time-out begins from the rising edge of the final

pulse in the command sequence.

Once the sector erase operation has begun, only the Erase

Suspend command is valid. All other commands are

ignored.

When the Embedded Erase algorithm is complete, the

device returns to reading array data and addresses are no

longer latched. The system can determine the status of the

erase operation by using I/O7, I/O6, or I/O2. Refer to "Write

Operation Status" for information on these status bits.

START

Write Program

Command

Sequence

Data Poll

from System

Verify Data ?

Last Address ?

Programming

Completed

Yes

Increment Address

Embedded

Program

algorithm in

progress

Note : See the appropriate Command Definitions table for

program command sequence.

Figure 1. Program Operation

A29040A Series

PRELIMINARY (August, 2001, Version 0.1) 9 AMIC Technology, Inc.

START

Write Erase

Command

Sequence

Data Poll

from System

Data = FFh ?

Erasure Completed

Yes

Embedded

Erase

algorithm in

progress

Note :

1. See the appropriate Command Definitions table for erase

command sequences.

2. See "I/O3 : Sector Erase Timer" for more information.

Figure 2. Erase Operation

Figure 2 illustrates the algorithm for the erase operation.

Refer to the Erase/Program Operations tables in the "AC

Characteristics" section for parameters, and to the Sector

Erase Operations Timing diagram for timing waveforms.

Erase Suspend/Erase Resume Commands

The Erase Suspend command allows the system to interrupt

a sector erase operation and then read data from, or

program data to, any sector not selected for erasure. This

command is valid only during the sector erase operation,

including the 50µs time-out period during the sector erase

command sequence. The Erase Suspend command is

ignored if written during the chip erase operation or

Embedded Program algorithm. Writing the Erase Suspend

command during the Sector Erase time-out immediately

terminates the time-out period and suspends the erase

operation. Addresses are "don't cares" when writing the

Erase Suspend command.

When the Erase Suspend command is written during a

sector erase operation, the device requires a maximum of

20µs to suspend the erase operation. However, when the

Erase Suspend command is written during the sector erase

time-out, the device immediately terminates the time-out

period and suspends the erase operation.

After the erase operation has been suspended, the system

can read array data from or program data to any sector not

selected for erasure. (The device "erase suspends" all

sectors selected for erasure.) Normal read and write timings

and command definitions apply. Reading at any address

within erase-suspended sectors produces status data on

I/O7 - I/O0. The system can use I/O7, or I/O6 and I/O2

together, to determine if a sector is actively erasing or is

erase-suspended. See "Write Operation Status" for

information on these status bits.

After an erase-suspended program operation is complete,

the system can once again read array data within non-

suspended sectors. The system can determine the status of

the program operation using the I/O7 or I/O6 status bits, just

as in the standard program operation. See "Write Operation

Status" for more information.

The system may also write the autoselect command

sequence when the device is in the Erase Suspend mode.

The device allows reading autoselect codes even at

addresses within erasing sectors, since the codes are not

stored in the memory array. When the device exits the

autoselect mode, the device reverts to the Erase Suspend

mode, and is ready for another valid operation. See

"Autoselect Command Sequence" for more information.

The system must write the Erase Resume command

(address bits are "don't care") to exit the erase suspend

mode and continue the sector erase operation. Further

writes of the Resume command are ignored. Another Erase

Suspend command can be written after the device has

resumed erasing.

A29040A Series

PRELIMINARY (August, 2001, Version 0.1) 10 AMIC Technology, Inc.

Table 4. A29040A Command Definitions

Bus Cycles (Notes 2 - 4)

First Second Third Fourth Fifth Sixth

Command

Sequence

(Note 1)

Cycles

Addr Data Addr Data Addr Data

Addr

Data Addr

Data

Addr Data

Read (Note 5) 1 RA RD

Reset (Note 6) 1 XXX F0

Manufacturer ID 4 555 AA 2AA 55 555 90 X00 37

Device ID 4 555 AA 2AA 55 555 90 X01 86

Continuation ID 4 555 AA 2AA 55 555 90 X03

Autoselect

(Note 7)

Sector Protect Verify

(Note 8) 4 555 AA 2AA 55 555 90 SA

X02 01

Program 4 555 AA 2AA 55 555 A0 PA PD

Chip Erase 6 555 AA 2AA 55 555 80 555 AA 2AA 55 555 10

Sector Erase 6 555 AA 2AA 55 555 80 555 AA 2AA 55 SA 30

Erase Suspend (Note 9) 1 XXX B0

Erase Resume (Note 10) 1 XXX 30

Legend:

X = Don't care

RA = Address of the memory location to be read.

RD = Data read from location RA during read operation.

PA = Address of the memory location to be programmed. Addresses latch on the falling edge of the

or CE pulse,

whichever happens later.

PD = Data to be programmed at location PA. Data latches on the rising edge of

or CE pulse, whichever happens first.

SA = Address of the sector to be verified (in autoselect mode) or erased. Address bits A18 - A16 select a unique sector.

Note:

1. See Table 1 for description of bus operations.

2. All values are in hexadecimal.

3. Except when reading array or autoselect data, all bus cycles are write operation.

4. Address bits A18 - A11 are don't cares for unlock and command cycles, unless SA or PA required.

5. No unlock or command cycles required when reading array data.

6. The Reset command is required to return to reading array data when device is in the autoselect mode, or if I/O5 goes

high (while the device is providing status data).

7. The fourth cycle of the autoselect command sequence is a read cycle.

8. The data is 00h for an unprotected sector and 01h for a protected sector. See "Autoselect Command Sequence" for

more information.

9. The system may read and program in non-erasing sectors, or enter the autoselect mode, when in the Erase Suspend

mode.

10. The Erase Resume command is valid only during the Erase Suspend mode.

A29040A Series

PRELIMINARY (August, 2001, Version 0.1) 11 AMIC Technology, Inc.

Write Operation Status

Several bits, I/O2, I/O3, I/O5, I/O6, and I/O7, are provided in the

A29040A to determine the status of a write operation. Table 5

and the following subsections describe the functions of these

status bits. I/O7, I/O6 and I/O2 each offer a method for

determining whether a program or erase operation is complete

or in progress. These three bits are discussed first.

I/O7: Data Polling

The Data Polling bit, I/O7, indicates to the host system

whether an Embedded Algorithm is in progress or completed,

or whether the device is in Erase Suspend. Data Polling is

valid after the rising edge of the final

pulse in the program

or erase command sequence.

During the Embedded Program algorithm, the device outputs

on I/O7 the complement of the datum programmed to I/O7. This

I/O7 status also applies to programming during Erase Suspend.

When the Embedded Program algorithm is complete, the

device outputs the datum programmed to I/O7. The system

must provide the program address to read valid status

information on I/O7. If a program address falls within a

protected sector, Data Polling on I/O7 is active for

approximately 2µs, then the device returns to reading array

data.

During the Embedded Erase algorithm, Data Polling produces

a "0" on I/O7. When the Embedded Erase algorithm is

complete, or if the device enters the Erase Suspend mode,

Data Polling produces a "1" on I/O7.This is analogous to the

complement/true datum output described for the Embedded

Program algorithm: the erase function changes all the bits in a

sector to "1"; prior to this, the device outputs the

"complement," or "0." The system must provide an address

within any of the sectors selected for erasure to read valid

status information on I/O7.

After an erase command sequence is written, if all sectors

selected for erasing are protected, Data Polling on I/O7 is

active for approximately 100µs, then the device returns to

reading array data. If not all selected sectors are protected, the

Embedded Erase algorithm erases the unprotected sectors,

and ignores the selected sectors that are protected.

When the system detects I/O7 has changed from the

complement to true data, it can read valid data at I/O7 - I/O0 on

the following read cycles. This is because I/O7 may change

asynchronously with I/O0 - I/O6 while Output Enable (OE) is

asserted low. The Data Polling Timings (During Embedded

Algorithms) figure in the "AC Characteristics" section illustrates

this. Table 5 shows the outputs for Data Polling on I/O7.

Figure 3 shows the Data Polling algorithm.

START

Read I/O7-I/O0

Address = VA

I/O7 = Data ?

FAIL

Note :

1. VA = Valid address for programming. During a sector

erase operation, a valid address is an address within any

sector selected for erasure. During chip erase, a valid

address is any non-protected sector address.

2. I/O7 should be rechecked even if I/O5 = "1" because

I/O7 may change simultaneously with I/O5.

Read I/O7 - I/O0

Address = VA

I/O5 = 1?

I/O7 = Data ?

Yes

PASS

Yes

Figure 3. Data Polling Algorithm

A29040A Series

PRELIMINARY (August, 2001, Version 0.1) 12 AMIC Technology, Inc.

I/O6: Toggle Bit I

Toggle Bit I on I/O6 indicates whether an Embedded Program

or Erase algorithm is in progress or complete, or whether the

device has entered the Erase Suspend mode. Toggle Bit I may

be read at any address, and is valid after the rising edge of the

final

pulse in the command sequence (prior to the

program or erase operation), and during the sector erase time-

out.

During an Embedded Program or Erase algorithm operation,

successive read cycles to any address cause I/O6 to toggle.

(The system may use either OE or CE to control the read

cycles.) When the operation is complete, I/O6 stops toggling.

After an erase command sequence is written, if all sectors

selected for erasing are protected, I/O6 toggles for

approximately 100µs, then returns to reading array data. If not

all selected sectors are protected, the Embedded Erase

algorithm erases the unprotected sectors, and ignores the

selected sectors that are protected.

The system can use I/O6 and I/O2 together to determine

whether a sector is actively erasing or is erase-suspended.

When the device is actively erasing (that is, the Embedded

Erase algorithm is in progress), I/O6 toggles. When the device

enters the Erase Suspend mode, I/O6 stops toggling. However,

the system must also use I/O2 to determine which sectors are

erasing or erase-suspended. Alternatively, the system can use

I/O7 (see the subsection on " I/O7 : Data Polling").

If a program address falls within a protected sector, I/O6

toggles for approximately 2µs after the program command

sequence is written, then returns to reading array data.

I/O6 also toggles during the erase-suspend-program mode,

and stops toggling once the Embedded Program algorithm is

complete.

The Write Operation Status table shows the outputs for Toggle

Bit I on I/O6. Refer to Figure 4 for the toggle bit algorithm, and

to the Toggle Bit Timings figure in the "AC Characteristics"

section for the timing diagram. The I/O2 vs. I/O6 figure shows

the differences between I/O2 and I/O6 in graphical form. See

also the subsection on " I/O2: Toggle Bit II".

I/O2: Toggle Bit II

The "Toggle Bit II" on I/O2, when used with I/O6, indicates

whether a particular sector is actively erasing (that is, the

Embedded Erase algorithm is in progress), or whether that

sector is erase-suspended. Toggle Bit II is valid after the rising

edge of the final

pulse in the command sequence.

I/O2 toggles when the system reads at addresses within those

sectors that have been selected for erasure. (The system may

use either OE or CE to control the read cycles.) But I/O2

cannot distinguish whether the sector is actively erasing or is

erase-suspended. I/O6, by comparison, indicates whether the

device is actively erasing, or is in Erase Suspend, but cannot

distinguish which sectors are selected for erasure. Thus, both

status bits are required for sector and mode information. Refer

to Table 5 to compare outputs for I/O2 and I/O6.

Figure 4 shows the toggle bit algorithm in flowchart form, and

the section " I/O2: Toggle Bit II" explains the algorithm. See

also the " I/O6: Toggle Bit I" subsection. Refer to the Toggle Bit

Timings figure for the toggle bit timing diagram. The I/O2 vs.

I/O6 figure shows the differences between I/O2 and I/O6 in

graphical form.

Reading Toggle Bits I/O6, I/O2

Refer to Figure 4 for the following discussion. Whenever the

system initially begins reading toggle bit status, it must read

I/O7 - I/O0 at least twice in a row to determine whether a toggle

bit is toggling. Typically, a system would note and store the

value of the toggle bit after the first read. After the second

read, the system would compare the new value of the toggle

bit with the first. If the toggle bit is not toggling, the device has

completed the program or erase operation. The system can

read array data on I/O7 - I/O0 on the following read cycle.

However, if after the initial two read cycles, the system

determines that the toggle bit is still toggling, the system also

should note whether the value of I/O5 is high (see the section

on I/O5). If it is, the system should then determine again

whether the toggle bit is toggling, since the toggle bit may have

stopped toggling just as I/O5 went high. If the toggle bit is no

longer toggling, the device has successfully completed the

program or erase operation. If it is still toggling, the device did

not complete the operation successfully, and the system must

write the reset command to return to reading array data.

The remaining scenario is that the system initially determines

that the toggle bit is toggling and I/O5 has not gone high. The

system may continue to monitor the toggle bit and I/O5 through

successive read cycles, determining the status as described in

the previous paragraph. Alternatively, it may choose to perform

other system tasks. In this case, the system must start at the

beginning of the algorithm when it returns to determine the

status of the operation (top of Figure 4).

I/O5: Exceeded Timing Limits

I/O5 indicates whether the program or erase time has

exceeded a specified internal pulse count limit. Under these

conditions I/O5 produces a "1." This is a failure condition that

indicates the program or erase cycle was not successfully

completed.

The I/O5 failure condition may appear if the system tries to

program a "1 "to a location that is previously programmed to

"0." Only an erase operation can change a "0" back to a "1."

Under this condition, the device halts the operation, and when

the operation has exceeded the timing limits, I/O5 produces a

"1."

Under both these conditions, the system must issue the reset

command to return the device to reading array data.

A29040A Series

PRELIMINARY (August, 2001, Version 0.1) 13 AMIC Technology, Inc.

I/O3: Sector Erase Timer

After writing a sector erase command sequence, the

system may read I/O3 to determine whether or not an

erase operation has begun. (The sector erase timer does

not apply to the chip erase command.) If additional

sectors are selected for erasure, the entire time-out also

applies after each additional sector erase command.

When the time-out is complete, I/O3 switches from "0" to

"1." The system may ignore I/O3 if the system can

guarantee that the time between additional sector erase

commands will always be less than 50µs. See also the

"Sector Erase Command Sequence" section.

After the sector erase command sequence is written, the

system should read the status on I/O7 (Data Polling) or

I/O6 (Toggle Bit 1) to ensure the device has accepted the

command sequence, and then read I/O3. If I/O3 is "1", the

internally controlled erase cycle has begun; all further

commands (other than Erase Suspend) are ignored until

the erase operation is complete. If I/O3 is "0", the device

will accept additional sector erase commands. To ensure

the command has been accepted, the system software

should check the status of I/O3 prior to and following each

subsequent sector erase command. If I/O3 is high on the

second status check, the last command might not have

been accepted. Table 5 shows the outputs for I/O3.

START

Read I/O7-I/O0

Toggle Bit

= Toggle ?

Program/Erase

Operation Not

Commplete, Write

Reset Command

Yes

Notes :

1. Read toggle bit twice to determine whether or not it is

toggling. See text.

2. Recheck toggle bit because it may stop toggling as I/O5

changes to "1". See text.

Read I/O7 - I/O0

Twice

I/O5 = 1?

Toggle Bit

= Toggle ?

Yes

Program/Erase

Operation

Commplete

Read I/O7-I/O0

(Notes 1,2)

Figure 4. Toggle Bit Algorithm

(Note 1)

A29040A Series

PRELIMINARY (August, 2001, Version 0.1) 14 AMIC Technology, Inc.

Table 5. Write Operation Status

I/O7 I/O6 I/O5 I/O3 I/O2

Operation (Note 1) (Note 2) (Note 1)

Embedded Program Algorithm 7I/O Toggle 0 N/A No toggle

Standard

Mode Embedded Erase Algorithm 0 Toggle 0 1 Toggle

Reading within Erase

Suspended Sector 1 No toggle 0 N/A Toggle

Reading within Non-Erase

Suspend Sector Data Data Data Data Data

Erase

Suspend

Mode

Erase-Suspend-Program 7I/O Toggle 0 N/A N/A

Notes:

1. I/O7 and I/O2 require a valid address when reading status information. Refer to the appropriate subsection for further

details.

2. I/O5 switches to “1” when an Embedded Program or Embedded Erase operation has exceeded the maximum timing

limits. See “I/O5: Exceeded Timing Limits” for more information.

A29040A Series

PRELIMINARY (August, 2001, Version 0.1) 15 AMIC Technology, Inc.

Maximum Negative Input Overshoot

20ns 20ns

20ns

+0.8V

-0.5V

-2.0V

Maximum Positive Input Overshoot

20ns20ns

20ns

VCC+0.5V

2.0V

VCC+2.0V

A29040A Series

PRELIMINARY (August, 2001, Version 0.1) 16 AMIC Technology, Inc.

DC Characteristics

TTL/NMOS Compatible

Parameter

Symbol Parameter Description Test Description Min. Typ.

Max. Unit

ILI Input Load Current VIN = VSS to VCC. VCC = VCC Max ±1.0 µA

ILIT A9 Input Load Current VCC = VCC Max, A9 = 12.5V 100 µA

ILO Output Leakage Current VOUT = VSS to VCC. VCC = VCC Max ±1.0 µA

ICC1 VCC Active Read Current

(Notes 1, 2) CE = VIL, OE = VIH 20 30 mA

ICC2 VCC Active Write (Program/Erase)

Current (Notes 2, 3, 4) CE= VIL, OE =VIH 30 40 mA

ICC3 VCC Standby Current (Note 2) CE= VIH 0.4 1.0 mA

VIL Input Low Level -0.5 0.8 V

VIH Input High Level 2.0 VCC+0.5

VID Voltage for Autoselect

and Sector Protect VCC = 5.25 V 10.5 12.5 V

VOL Output Low Voltage IOL = 12mA, VCC = VCC Min 0.45 V

VOH Output High Voltage IOH = -2.5 mA, VCC = VCC Min 2.4 V

CMOS Compatible

Parameter

Symbol Parameter Description Test Description Min. Typ.

Max. Unit

ILI Input Load Current VIN = VSS to VCC, VCC = VCC Max ±1.0 µA

ILIT A9 Input Load Current VCC = VCC Max, A9 = 12.5V 100 µA

ILO Output Leakage Current VOUT = VSS to VCC, VCC = VCC Max ±1.0 µA

ICC1 VCC Active Read Current

(Notes 1,2) CE = VIL, OE = VIH 20 30 mA

ICC2 VCC Active Program/Erase Current

(Notes 2,3,4) CE = VIL, OE = VIH 30 40 mA

ICC3 VCC Standby Current (Notes 2, 5) CE = VCC ± 0.5 V 1 5 µA

VIL Input Low Level -0.5 0.8 V

VIH Input High Level 0.7 x VCC VCC+0.3

VID Voltage for Autoselect and Sector

Protect VCC = 5.25 V 10.5 12.5 V

VOL Output Low Voltage IOL = 12.0 mA, VCC = VCC Min 0.45 V

VOH1 IOH = -2.5 mA, VCC = VCC Min 0.85 x VCC

VOH2 Output High Voltage IOH = -100 µA. VCC = VCC Min VCC-0.4 V

Notes for DC characteristics (both tables):

1. The ICC current listed includes both the DC operation current and the frequency dependent component (at 6 MHz).

The frequency component typically is less than 2 mA/MHz, withOE at VIH.

2. Maximum ICC specifications are tested with VCC = VCC max.

3. ICC active while Embedded Algorithm (program or erase) is in progress.

4. Not 100% tested.

5. For CMOS mode only, ICC3 = 20µA max at extended temperatures (> +85°C)

A29040A Series

PRELIMINARY (August, 2001, Version 0.1) 17 AMIC Technology, Inc.

AC Characteristics

Read Only Operations

Parameter Symbols

Speed

JEDEC Std

Description Test Setup

-55 -70 -90

Unit

tAVAV tRC Read Cycle Time (Note 2) Min. 55 70 90 ns

tAVQV tACC Address to Output Delay CE = VIL

OE = VIL Max. 55 70 90 ns

tELQV tCE Chip Enable to Output Delay OE = VIL Max. 55 70 90 ns

tGLQV tOE Output Enable to Output Delay Max. 30 30 35 ns

Read Min. 0 0 0 ns

tOEH Output Enable Hold

Time (Note 2) Toggle and

Data Polling

Min. 10 10 10 ns

tEHQZ tDF Chip Enable to Output High Z

(Notes 1,2) Max. 18 20 20 ns

tGHQZ tDF Output Enable to Output High Z

(Notes 1,2) Max. 18 20 20 ns

tAXQX tOH Output Hold Time from Addresses,

CEor OE, Whichever Occurs First

Min. 0 0 0 ns

Notes:

1. Output driver disable time.

2. Not 100% tested.

Timing Waveforms for Read Only Operation

Addresses Addresses Stable

Output Valid High-Z

Output

tRC

tOEH

tOE

tCE

High-Z

tOH

tDF

tACC

A29040A Series

PRELIMINARY (August, 2001, Version 0.1) 18 AMIC Technology, Inc.

AC Characteristics

Erase and Program Operations

Parameter Symbols Speed

JEDEC Std

Description

-55 -70 -90

Unit

tAVAV tWC Write Cycle Time (Note 1) Min. 55 70 90 ns

tAVWL tAS Address Setup Time Min. 0 ns

tWLAX tAH Address Hold Time Min. 40 45 45 ns

tDVWH tDS Data Setup Time Min. 25 30 45 ns

tWHDX tDH Data Hold Time Min. 0 ns

tOES Output Enable Setup Time Min. 0 ns

tGHWL tGHWL Read Recover Time Before Write

(OE high to

low) Min. 0 ns

tELWL tCS CE Setup Time Min. 0 ns

tWHEH tCH CE Hold Time Min. 0 ns

tWLWH tWP Write Pulse Width Min. 30 35 45 ns

Min. 20 ns

tWHWL tWPH Write Pulse Width High Max. 50 µs

tWHWH1 tWHWH1 Byte Programming Operation

(Note 2) Typ. 7 µs

tWHWH2 tWHWH2 Sector Erase Operation

(Note 2) Typ. 1 sec

tVCS VCC Set Up Time (Note 1) Min. 50 µs

Notes:

1. Not 100% tested.

2. See the "Erase and Programming Performance" section for more information.

A29040A Series

PRELIMINARY (August, 2001, Version 0.1) 19 AMIC Technology, Inc.

Timing Waveforms for Program Operation

Addresses

Data

VCC

A0h PD

tWC

Program Command Sequence (last two cycles)

DOUT

Status

tAS

tVCS

Read Status Data (last two cycles)

555h

tAH

tWHWH1

tCH

tGHWL

tWP

tWPH

tCS tDS tDH

Note : PA = program addrss, PD = program data, Dout is the true data at the program address.

A29040A Series

PRELIMINARY (August, 2001, Version 0.1) 20 AMIC Technology, Inc.

Addresses

Data

VCC

55h 30h

tWC

Erase Command Sequence (last two cycles)

Complete

Progress

tAS

tVCS

Read Status Data

2AAh

tAH

tWHWH2

tCH

tGHWL

tWP

tWPH

tCS tDS tDH

Note : SA = Sector Address. VA = Valid Address for reading status data.

555h for chip erase

10h for chip erase

Timing Waveforms for Chip/Sector Erase Operation

A29040A Series

PRELIMINARY (August, 2001, Version 0.1) 21 AMIC Technology, Inc.

Timing Waveforms for Data Polling (During Embedded Algorithms)

Addresses

I/O7

tRC

VAVA VA

Complement

Complement True Valid Data High-Z

Status Data

Status Data True Valid Data High-Z

I/O0 - I/O6

tACC

tCE

tCH tOE

tOEH tDF

tOH

Note : VA = Valid Address. Illustation shows first status cycle after command sequence, last status read cycle, and array data

read cycle.

A29040A Series

PRELIMINARY (August, 2001, Version 0.1) 22 AMIC Technology, Inc.

Timing Waveforms for Toggle Bit (During Embedded Algorithms)

Note: VA = Valid Address; not required for I/O6. Illustration shows first two status cycle after command sequence, last status

read cycle, and array data read cycle.

Addresses

I/O6 , I/O2

tRC

VAVA VA

Valid Status

tACC

tCE

tCH tOE

tOEH tDF

tOH

Valid Status Valid Status Valid Status

(first read) (second read) (stop togging)

A29040A Series

PRELIMINARY (August, 2001, Version 0.1) 23 AMIC Technology, Inc.

Timing Waveforms for I/O2 vs. I/O6

AC Characteristics

Erase and Program Operations

Alternate CE Controlled Writes

Parameter Symbols Speed

JEDEC Std

Description

-55 -70 -90

Unit

tAVAV tWC Write Cycle Time (Note 1) Min. 55 70 90 ns

tAVEL tAS Address Setup Time Min. 0 ns

tELAX tAH Address Hold Time Min. 40 45 45 ns

tDVEH tDS Data Setup Time Min. 25 30 45 ns

tEHDX tDH Data Hold Time Min. 0 ns

tGHEL tGHEL Read Recover Time Before Write Min. 0 ns

tWLEL tWS

Setup Time Min. 0 ns

tEHWH tWH

Hold Time Min. 0 ns

tELEH tCP Write Pulse Width Min. 30 35 45 ns

tEHEL tCPH Write Pulse Width High Min. 20 20 20 ns

tWHWH1 tWHWH1 Byte Programming Operation (Note 2) Typ. 7 µs

tWHWH2 tWHWH2 Sector Erase Operation (Note 2) Typ. 1 sec

Notes:

3. Not 100% tested.

4. See the "Erase and Programming Performance" section for more information.

Enter

Embedded

Erasing

Erase

Suspend Enter Erase

Suspend Program Erase

Resume

I/O6

I/O2

Erase Erase Suspend

Read Erase Suspend

Read Erase Erase

Complete

I/O2 and I/O6 toggle with OE and CE

Note : Both I/O6 and I/O2 toggle with OE or CE. See the text on I/O6 and I/O2 in the section "Write Operation Statue" for

more information.

Erase

Suspend

Program

A29040A Series

PRELIMINARY (August, 2001, Version 0.1) 24 AMIC Technology, Inc.

Timing Waveforms for Alternate

Controlled Write Operation

Erase and Programming Performance

Parameter Typ. (Note 1) Max. (Note 2) Unit Comments

Sector Erase Time 1 8 sec

Chip Erase Time 8 64 sec Excludes 00h programming

prior to erasure (Note 4)

Byte Programming Time 35 300 µs

Chip Programming Time (Note 3) 3.6 10.8 sec Excludes system-level

overhead (Note 5)

Notes:

1. Typical program and erase times assume the following conditions: 25°C, 5.0V VCC, 100,000 cycles. Additionally,

programming typically assumes checkerboard pattern.

2. Under worst case conditions of 90°C, VCC = 4.5V (4.75V for -55), 100,000 cycles.

3. The typical chip programming time is considerably less than the maximum chip programming time listed, since most bytes

program faster than the maximum byte program time listed. If the maximum byte program time given is exceeded, only

then does the device set I/O5 = 1. See the section on I/O5 for further information.

4. In the pre-programming step of the Embedded Erase algorithm, all bytes are programmed to 00h before erasure.

5. System-level overhead is the time required to execute the four-bus-cycle command sequence for programming. See

Table 4 for further information on command definitions.

6. The device has a guaranteed minimum erase and program cycle endurance of 100,000 cycles.

Addresses

Data

555 for program

2AA for erase

DOUT

I/O7

Data Polling

Note :

1. PA = Program Address, PD = Program Data, SA = Sector Address, I/O7 = Complement of Data Input, DOUT = Array Data.

2. Figure indicates the last two bus cycles of the command sequence.

PD for program

30 for sector erase

10 for chip erase

tBUSY

tWHWH1 or 2

tAH

tAStWC

tWH

tGHEL

tCP

tWS

tCPH

PA for program

SA for sector erase

555 for chip erase

A0 for program

55 for erase

tRH

tDStDH

A29040A Series

PRELIMINARY (August, 2001, Version 0.1) 25 AMIC Technology, Inc.

Latch-up Characteristics

Description Min. Max.

Input Voltage with respect to VSS on all I/O pins -1.0V VCC+1.0V

VCC Current -100 mA +100 mA

Includes all pins except VCC. Test conditions: VCC = 5.0V, one pin at time.

TSOP Pin Capacitance

Parameter Symbol Parameter Description Test Setup Typ. Max. Unit

CIN Input Capacitance VIN=0 6 7.5 pF

COUT Output Capacitance VOUT=0 8.5 12 pF

CIN2 Control Pin Capacitance VIN=0 7.5 9 pF

Notes:

1. Sampled, not 100% tested.

2. Test conditions TA = 25°C, f = 1.0MHz

PLCC and P-DIP Pin Capacitance

Parameter Symbol Parameter Description Test Setup Typ. Max. Unit

CIN Input Capacitance VIN=0 4 6 pF

COUT Output Capacitance VOUT=0 8 12 pF

CIN2 Control Pin Capacitance VPP=0 8 12 pF

Notes:

3. Sampled, not 100% tested.

4. Test conditions TA = 25°C, f = 1.0MHz

Data Retention

Parameter Test Conditions Min Unit

150°C 10 Years

Minimum Pattern Data Retention Time 125°C 20 Years

A29040A Series

PRELIMINARY (August, 2001, Version 0.1) 26 AMIC Technology, Inc.

Test Conditions

Table 6. Test Specifications

Test Condition -55 All others Unit

Output Load 1 TTL gate

Output Load Capacitance, CL(including jig capacitance) 30 100 pF

Input Rise and Fall Times 5 20 ns

Input Pulse Levels 0.0 - 3.0 0.45 - 2.4 V

Input timing measurement reference levels 1.5 0.8, 2.0 V

Output timing measurement reference levels 1.5 0.8, 2.0 V

6.2 K

Ω

Device

Under

Test

CLDiodes = IN3064 or Equivalent

2.7 K

Ω

5.0 V

Figure 7. Test Setup

A29040A Series

PRELIMINARY (August, 2001, Version 0.1) 27 AMIC Technology, Inc.

Ordering Information

Part No. Access Time

(ns)

Active Read

Current

Typ. (mA)

Program/Erase

Current

Typ. (mA)

Standby Current

Typ. (µA) Package

A29040A-55 32Pin DIP

A29040AL-55 32Pin PLCC

A29040AV-55

55 20 30 1

32Pin TSOP

A29040A-70 32Pin DIP

A29040AL-70 32Pin PLCC

A29040AV-70

70 20 30 1

32Pin TSOP

A29040A-90 32Pin DIP

A29040AL-90 32Pin PLCC

A29040AV-90

90 20 30 1

32Pin TSOP

A29040A Series

PRELIMINARY (August, 2001, Version 0.1) 28 AMIC Technology, Inc.

Package Information

P-DIP 32L Outline Dimensions unit: inches/mm

Base Plane

Seating Plane

Dimensions in inches Dimensions in mm

Symbol Min Nom Max Min Nom Max

A - - 0.210 - - 5.334

A1 0.015 - - 0.381 - -

A2 0.149 0.154 0.159 3.785 3.912 4.039

B - 0.018 - - 0.457 -

B1 - 0.050 - - 1.270 -

C - 0.010 - - 0.254 -

D 1.645 1.650 1.655 41.783 41.91 42.037

E 0.537 0.542 0.547 13.64 13.767 13.894

E1 0.590 0.600 0.610 14.986 15.240 15.494

EA 0.630 0.650 0.670 16.002 16.510 17.018

e - 0.100 - - 2.540 -

L 0.120 0.130 0.140 3.048 3.302 3.556

θ 0° - 15° 0° - 15°

Notes:

1. The maximum value of dimension D includes end flash.

2. Dimension E does not include resin fins.

A29040A Series

PRELIMINARY (August, 2001, Version 0.1) 29 AMIC Technology, Inc.

Package Information

PLCC 32L Outline Dimension unit: inches/mm

A1A2

21 29

Dimensions in inches Dimensions in mm

Symbol Min Nom Max Min Nom Max

A - - 0.134 - - 3.40

A1 0.0185 - - 0.47 - -

A2 0.105 0.110 0.115 2.67 2.80 2.93

b1 0.026 0.028 0.032 0.66 0.71 0.81

b 0.016 0.018 0.021 0.41 0.46 0.54

C 0.008 0.010 0.014 0.20 0.254 0.35

D 0.547 0.550 0.553 13.89 13.97 14.05

E 0.447 0.450 0.453 11.35 11.43 11.51

e 0.044 0.050 0.056 1.12 1.27 1.42

GD 0.490 0.510 0.530 12.45 12.95 13.46

GE 0.390 0.410 0.430 9.91 10.41 10.92

HD 0.585 0.590 0.595 14.86 14.99 15.11

HE 0.485 0.490 0.495 12.32 12.45 12.57

L 0.075 0.090 0.095 1.91 2.29 2.41

y - - 0.003 - - 0.075

θ 0° - 10° 0° - 10°

Notes:

1. Dimensions D and E do not include resin fins.

2. Dimensions GD & GE are for PC Board surface mount pad pitch

design reference only.

A29040A Series

PRELIMINARY (August, 2001, Version 0.1) 30 AMIC Technology, Inc.

Package Information

TSOP 32L TYPE I (8 X 20mm) Outline Dimensions unit: inches/mm

Detail "A"

Dimensions in inches

Dimensions in mm

Symbol Min Nom Max Min Nom Max

A - - 0.047 - - 1.20

A1 0.002 - 0.006 0.05 - 0.15

A2 0.037 0.039 0.041 0.95 1.00 1.05

b 0.007 0.009 0.011 0.18 0.22 0.27

c 0.004 - 0.008 0.11 - 0.20

D 0.720 0.724 0.728 18.30 18.40 18.50

E - 0.315 0.319 - 8.00 8.10

e 0.020 BSC 0.50 BSC

HD 0.779 0.787 0.795 19.80 20.00 20.20

L 0.016 0.020 0.024 0.40 0.50 0.60

LE - 0.032 - - 0.80 -

S - - 0.020 - - 0.50

y - - 0.003 - - 0.08

θ 0° - 5° 0° - 5°

Notes:

1. The maximum value of dimension D includes end flash.

2. Dimension E does not include resin fins.

3. Dimension S includes end flash.